RJK03H1DPA Datasheet

RJK03H1DPA

30V, 45A, 2.4mΩmax.

Built in SBD N Channel Power MOS FET

High Speed Power Switching

Features

 High speed switching

 Capable of 4.5 V gate drive

 Low drive current

 High density mounting

 Low on-resistance

 Pb-free

 Halogen-free

Outline

RENESAS Package code: PWSN0008DE-A

(Package name: WPAK(3F))

5 6 7 8

D D D D

5 6 7 8

Preliminary Datasheet

R07DS0216EJ0300

Rev.3.00

Mar 22, 2013

4 3 2 1

4

G

1, 2, 3 Source

4 Gate

5, 6, 7, 8 Drain

S S S

1 2 3

Absolute Maximum Ratings

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

Channel to case thermal impedance

Channel temperature

Storage temperature

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tch = 25 C, Rg  50 

3. Tc = 25 C

(Ta = 25°C)

V

DSS

30 V

V

GSS

±12 V

I

D

45 A

I

D(pulse)

Note1

180 A

I

DR

45 A

I

AP

Note 2 20 A

E

AR

Note 2

40 mJ

Pch

Note3

45 W

ch-c Note3

2.78 C/W

Tch

Tstg

150

–55 to +150

C

C

R07DS0216EJ0300 Rev.3.00

Mar 22, 2013

Page 1 of 6

RJK03H1DPA Preliminary

Electrical Characteristics

(Ta = 25°C)

Fall time

Item Symbol

Drain to source breakdown voltage

Gate to source leak current

Zero gate voltage drain current

Gate to source cutoff voltage

Static drain to source on state resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate Resistance

Total gate charge

Gate to source charge

Gate to drain charge

Turn-on delay time

Rise time

Turn-off delay time

Body–drain diode forward voltage

Body–drain diode reverse recovery time

Notes: 4. Pulse test

V

(BR)DSS

I

GSS

Ciss

Coss

Crss

Rg

30

—

—

—

—

—

5300

590

400

1.3

—

7420

—

—

2.6

V I pF pF pF



D

= 10 mA, V

V

DS

= 10 V

V

GS

= 0 f = 1 MHz

GS

= 0

GS

= ±12 V, V

DS

= 0

I

DSS

— — 1 mA = 30 V, V

GS

= 0

V

GS(off)

V

DS

= 10 V, I

D

= 1 mA

R

DS(on)

— 2.0 2.4 m  I

D

= 22.5A, V

GS

= 8.0 V

Note4

R

DS(on)

— 2.4 3.0 m  I

D

= 22.5A, V

GS

= 4.5 V

Note4

|y fs

= 22.5A, V

DS

= 5 V Note4

Qg

Qgs

—

—

40

14

—

— nC nC

V

DD

= 10 V

V

GS

= 4.5 V

I

D

= 45 A

Qgd — 12 — nC t d(on) GS

= 8 V, I

D

= 22.5 A t d(off) t t r

— 9.4 — ns

 10 V f

— 72.9 — ns

= 0.44



Rg = 4.7 

V

DF

= 2 A, V

GS

= 0 Note4 t rr

— — ns

GS

= 0 di

F

/ dt = 100 A/ s

R07DS0216EJ0300 Rev.3.00

Mar 22, 2013

Page 2 of 6

RJK03H1DPA

Main Characteristics

Power vs. Temperature Derating

80

60

40

20

0 50 100 150

Case Temperature Tc (°C)

200

50

40

Typical Output Characteristics

4.5 V

8 V

2.5 V

Pulse Test

2.45 V

30

2.4 V

20

V

GS

= 2.3 V

10

0

2 4 6 8

Drain to Source Voltage V

DS

(V)

10

160

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Pulse Test

120

80

40

I

D

= 20 A

10 A

5 A

0

3 6 9

Gate to Source Voltage V

GS

(V)

12

R07DS0216EJ0300 Rev.3.00

Mar 22, 2013

Preliminary

1000

Maximum Safe Operation Area

100

1 ms

100

10

μs

μs

10 PW = 10 ms

DC Operation

1

Operation in this area is limited by R

DS(on)

0.1

0.1

Tc = 25 °C

1 shot Pulse

1 10 100

Drain to Source Voltage V

DS

(V)

Typical Transfer Characteristics

50

40

V

DS

= 5 V

Pulse Test

30

20

10

25°C

Tc = 75°C

–25°C

0 1 2 3 4

Gate to Source Voltage V

GS

(V)

5

Static Drain to Source On State Resistance vs. Drain Current

100

Pulse Test

30

10

3 V

GS

= 4.5 V

1

1

8 V

3 10 30 100

Drain Current I

D

(A)

300 1000

Page 3 of 6

RJK03H1DPA

Static Drain to Source On State Resistance vs. Temperature

10

Pulse Test

8

6

I

D

= 5 A, 10 A, 20 A

4

V

GS

= 4.5 V

2

8 V

5 A, 10 A, 20 A

0

–25 0 25 50 75 100 125 150

Case Temperature Tc (°C)

Dynamic Input Characteristics

50

I

D

= 45 A

40

20

30

V

DS

16

V

GS

12

V

DD

= 25 V

10 V

20 8

10

0

0

4

V

DD

= 25 V

10 V

20 40 60 80

Gate Charge Qg (nc)

100

0

50

Maximum Avalanche Energy vs.

Channel Temperature Derating

40

I

AP

= 20 A

V

DD

= 15 V duty < 0.1%

Rg

≥ 50 Ω

30

20

10

0

25 50 75 100 125

Channel Temperature Tch (°C)

150

Preliminary

Typical Capacitance vs.

Drain to Source Voltage

10000

3000

1000

Ciss

Coss

300

Crss

100

30

10

0

V

GS

= 0 f = 1 MHz

10 20

Drain to Source Voltage V

DS

(V)

30

30

20

10

50

40

Reverse Drain Current vs.

Source to Drain Voltage

8 V

4.5 V

Pulse Test

V

GS

= 0, –5 V

0

0.4

0.8

1.2

1.6

Source to Drain Voltage V

SD

(V)

2.0

R07DS0216EJ0300 Rev.3.00

Mar 22, 2013

Page 4 of 6

RJK03H1DPA Preliminary

Vin

15 V

Normalized Transient Thermal Impedance vs. Pulse Width

3

1

D = 1

0.5

0.3

0.03

0.2

0.1

0.1

0.05

0.02

0.01

1shot puls e

0.01

Avalanche Test Circuit

V

DS

Monitor

Rg

P

DM

1 m 10 m 100 m

Pulse Width PW (s)

PW

T

1

D =

PW

T

10

L

I

AP

Monitor

D. U. T V

DD

Avalanche Waveform

E

AR

1

= L

2

• I

AP

2 •

V

DSS

V

DSS

– V

DD

I

AP

V

DS

V

(BR)DSS

I

D

0

V

DD

Switching Time Test Circuit

Vin Monitor

Vout

Monitor

D.U.T.

Rg

R

L

Vin

V

DS

= 10 V

Switching Time Waveform

90%

Vin

Vout

10%

10% 10% td(on)

90% tr

90% td(off) tf

R07DS0216EJ0300 Rev.3.00

Mar 22, 2013

Page 5 of 6

RJK03H1DPA

Package Dimensions

Package Name

WPAK(3F)

JEITA Package Code

⎯

RENESAS Code

PWSN0008DE-A

Previous Code

WPAK(3F)V

MASS[Typ.]

0.075g

5.1 ± 0.2

0.85Max

4.23Typ

1.27Typ

3.92 ± 0.22

Preliminary

Unit: mm

0.545Typ

1.27Typ

4.90 ± 0.1

0.21Typ

0.42 ± 0.08

Ordering Information

Orderable Part Number

Note: The symbol of 2nd "-" is occasionally presented as "#".

(Sn plating)

Notice:The reverse pattern of die-pad support lead described above exists.

R07DS0216EJ0300 Rev.3.00

Mar 22, 2013

Page 6 of 6

Notice

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