datasheet for 1N5811U by STMicroelectronics
1N5811U
Aerospace 6 A fast recovery rectifier
Features
K
A
■
Aerospace applications
■
Surface mount hermetic package
■
High thermal conductivity materials
■
Very small conduction losses
■
Negligible switching losses
■
Extremely fast switching
■
Low forward voltage drop
■
Package mass: 0.18 g
■
Target radiation qualification
– 150 krad (Si) low dose rate
– 3 Mrad (Si) high dose rate
■
K
A
LCC2B
ESCC qualified
Description
This power ultrafast recovery rectifier is designed
and packaged to comply with the ESCC5000
specification for aerospace products. It is housed
in a surface mount hermetically sealed LCC2B
package whose footprint is 100% compatible with
industry standard solutions in D5B.
The 1N5811U is suitable for switching mode
power supplies and high frequency DC to DC
converters such as low voltage high frequency
inverter, free wheeling or polarity protection .
Table 1.
Device summary(1)
Order code
ESCC detailed
specification
Quality level
Lead finish
EPPL
1N5811UB1
-
Engineering
model
Gold plated
-
1N5811U01B
5101/013/11
Flight part
Gold plated
Y
1N5811U02B
5101/013/12
Flight part
Solder dip
Y
IF(AV)
VRRM
Tj(max)
VF (max)
6A
150 V
175 °C
0.995 V
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
March 2010
Doc ID 16005 Rev 2
1/7
www.st.com
7
Characteristics
1N5811U
1
Characteristics
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
150
V
IF(RMS)
Forward rms current
10
A
6
A
IF(AV)
Average forward rectified current
IFSM
Forward surge current
Tstg
Storage temperature range
Tj
Tsol
Tc = 135 °C, δ = 0.5
tp = 8.3 ms sinusoidal
105
tp = 10 ms sinusoidal
100
A
-65 to + 175
°C
Maximum operating junction temperature
175
°C
Maximum soldering temperature (1)
245
°C
Value
Unit
6.5
°C/W
1. Maximum duration 5 s. The same package must not be resoldered until 3 minutes have elapsed.
Table 3.
Thermal resistance
Symbol
Rth (j-c)
(1)
Parameter
Junction to case
1. Package mounted on infinite heatsink
Table 4.
Symbol
Static electrical characteristics
Parameter
Tests conditions
Tj = 25 °C
IR (1)
Reverse current
Tj = 125 °C
Tj = 25 °C
Tj = -65 °C
Tj = 25 °C
VR = 150 V
VR = 160 V
IF = 3 A
Tj = 25 °C
VF (2)
Forward voltage
Tj = 125 °C
IF = 4 A
Tj = -65 °C
Tj = 25 °C
IF = 6 A
Min.
Typ.
-
-
2
-
-
30
-
-
10
-
-
10
-
-
865
-
-
900
-
-
800
-
-
1075
-
-
955
1. Pulse test : tp = 5 ms, δ < 2%
2. Pulse test : tp = 680 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.68 x IF(AV) + 0.03 IF2(RMS )
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Doc ID 16005 Rev 2
Max.
Unit
µA
µA
mV
1N5811U
Characteristics
Table 5.
Dynamic characteristics
Symbol
Test conditions
Parameter
Min.
Typ
Max.
IF = IR = 1 A, IRR = 0.1 A, dI/dt = -100 A/µs, (min)
30
IF = 1 A, Vr = 30 V, dI/dt = -50 A/µs,
35
Unit
tRR
Reverse recovery time
VFP
Forward recovery voltage IFM = 500 mA
2.2
V
tFR
Forward recovery time
IFM = 500 mA, VFR = 1.1 x VF
15
ns
Cj
Diode capacitance
VR = 10 V, F = 1 MHz
60
pF
Figure 1.
Forward voltage drop versus
forward current (typical values)
Figure 2.
IFM(A)
20
20
18
18
16
16
14
14
ns
Forward voltage drop versus
forward current (maximum values)
IFM(A)
12
12
10
10
Tj=125 °C
Tj=125 °C
8
8
Tj=-65 °C
6
6
Tj=25 °C
4
2
Tj=-65 °C
Tj=25 °C
4
2
VFM(V)
VFM(V)
0
0
0.0
0.2
Figure 3.
0.4
0.6
0.8
1.0
1.2
1.4
Reverse leakage current versus
reverse voltage applied
(typical values)
0.0
Figure 4.
IR(µA)
1.0
1.E+01
0.2
0.9
0.4
0.6
0.8
1.0
1.2
1.4
Relative variation of thermal
impedance, junction to case,
versus pulse duration
Zth(j-c)/Rth(j-c)
LCC2B
Tj=125 °C
0.8
1.E+00
0.7
0.6
Tj=75 °C
1.E-01
0.5
0.4
0.3
1.E-02
Single pulse
0.2
Tj= 25 °C
0.1
VR(V)
1.E-03
0
20
40
60
80
100
120
140
160
0.0
1.E-05
Doc ID 16005 Rev 2
tP(s)
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
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Characteristics
Figure 5.
1N5811U
Reverse recovery time versus dIF/dt Figure 6.
Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
tRR(ns)
80
100
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
IF=IF(AV)
VR=120 V
70
60
50
Tj=125 °C
40
30
20
Tj=25 °C
10
VR(V)
dIF/dt(A/µs)
0
10
0
4/7
50
100
150
200
250
300
350
400
450
500
1
Doc ID 16005 Rev 2
10
100
1000
1N5811U
2
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
Leadless chip carrier 2 (LCC2B) package dimensions
Dimensions
Ref.
A
D
B
2
C
Pin 2 Cathode
Inches
Min.
Typ. Max.
Min.
Typ.
Max.
A(1)
2.04
2.23
2.42 0.080 0.088 0.095
B
5.27
5.4
5.6
C
3.49
3.62
3.82 0.137 0.143 0.150
D
1.71
1.90
2.09 0.067 0.075 0.082
E
0.48
-
0.71 0.019 0.028 0.028
F
-
1.4
-
-
0.055
-
G
-
3.32
-
-
0.131
-
H
-
1.82
-
-
0.072
-
I
-
0.15
-
-
0.006
-
r1
-
0.15
-
-
0.006
-
r2
-
0.20
-
-
0.008
-
Note 1
1
F
Millimeters
Note 1
0.207 0.213 0.220
Pin 1 Anode
E
H
I
1
Note 1
E
2
r1
G
r2
Note 1: The anode is identified by metallization in two top internal angles and the index mark.
1. Measurement prior to solder coating the mounting pads on bottom of package
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Ordering information
3
1N5811U
Ordering information
Table 7.
Ordering information(1)
Order code
ESCC detailed
specification
1N5811UB1
-
1N5811U01B
5101/013/11
1N5811U02B
5101/013/12
Package
LCC2B
Lead finish
Marking
EPPL
Mass
Gold plated
11UB1
-
0.18 g
Gold plated
11U01B
Y
Solder dip
11U02B
Y
0.18 g
Packing
Waffle
pack
1. Contact ST sales office for information about the specific conditions for products in die form and QML-Q
versions.
4
Revision history
Table 8.
6/7
Document revision history
Date
Revision
Changes
27-Jul-2009
1
First issue.
25-Mar-2010
2
Updated ESCC status in Features. Added footnote to Table 3.
Doc ID 16005 Rev 2
1N5811U
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