datasheet for SST39VF010 by Microchip Technology Inc.

datasheet for SST39VF010 by Microchip Technology Inc.
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
A Microchip Technology Company
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020,
SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash
(MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash
technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The
SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power
supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply.
The devices conform to JEDEC standard pinouts for x8 memories.
Features
• Organized as 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF010/020/040
– 2.7-3.6V for SST39VF010/020/040
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
(typical values at 14 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 1 µA (typical)
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Fast Read Access Time:
– 45 ns for SST39LF010/020/040
– 55 ns for SST39LF020/040
– 70 ns for SST39VF010/020/040
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
2 seconds (typical) for SST39LF/VF010
4 seconds (typical) for SST39LF/VF020
8 seconds (typical) for SST39LF/VF040
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 48-ball TFBGA (6mm x 8mm)
– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
• All devices are RoHS compliant
©2011 Silicon Storage Technology, Inc.
www.microchip.com
DS25023A
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
A Microchip Technology Company
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Product Description
The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020, SST39VF040 are
128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The
SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The
SST39VF010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC
standard pinouts for x8 memories.
Featuring high performance Byte-Program, the SST39LF010/020/040 and SST39VF010/020/040
devices provide a maximum Byte-Program time of 20 µsec. These devices use Toggle Bit or Data#
Polling to indicate the completion of Program operation. To protect against inadvertent write, they have
on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a
wide spectrum of applications, they are offered with a guaranteed typical endurance of 100,000 cycles.
Data retention is rated at greater than 100 years.
The SST39LF010/020/040 and SST39VF010/020/040 devices are suited for applications that require
convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improves performance and reliability, while lowering power consumption.
They inherently use less energy during Erase and Program than alternative flash technologies. The
total energy consumed is a function of the applied voltage, current, and time of application. Since for
any given voltage range, the SuperFlash technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or Program operation is less than alternative
flash technologies. These devices also improve flexibility while lowering the cost for program, data, and
configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.
To meet surface mount requirements, the SST39LF010/020/040 and SST39VF010/020/040 devices
are offered in 32-lead PLCC and 32-lead TSOP packages. The SST39LF/VF010 and SST39LF/VF020
are also offered in a 48-ball TFBGA package. See Figures 2, 3, 4, and 5 for pin assignments.
©2011 Silicon Storage Technology, Inc.
DS25023A
2
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
Block Diagram
X-Decoder
Memory Address
SuperFlash
Memory
Address Buffers Latches
Y-Decoder
CE#
OE#
Control Logic
I/O Buffers and Data Latches
WE#
DQ7 - DQ0
1150 B1.1
Figure 1: Functional Block Diagram
©2011 Silicon Storage Technology, Inc.
DS25023A
3
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
A17
A17
NC
WE#
WE#
WE#
VDD
VDD
VDD
A18
NC
4
3
2
1
32 31 30
29
NC
A16
A16
A16
A15
A15
A15
A12
SST39LF/VF040 SST39LF/VF020 SST39LF/VF010
A12
A12
SST39LF/VF010 SST39LF/VF020 SST39LF/VF040
Pin Assignments
SST39LF/VF010 SST39LF/VF020 SST39LF/VF040
A7
A7
A7
5
A14
A14
A14
A6
A6
A6
6
28
A13
A13
A13
A5
A5
A5
7
27
A8
A8
A8
A4
A4
A4
8
26
A9
A9
A9
A3
A3
A3
9
25
A11
A11
A11
A2
A2
A2
10
24
OE#
OE#
OE#
A1
A1
A1
11
23
A10
A10
A10
A0
A0
A0
12
22
CE#
CE#
CE#
DQ0
DQ0
DQ0
13
21
14 15 16 17 18 19 20
DQ7
DQ7
DQ7
32-lead PLCC
Top View
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
SST39LF/VF040 SST39LF/VF020 SST39LF/VF010
1150 32-plcc NH P4.4
Figure 2: Pin Assignments for 32-lead PLCC
©2011 Silicon Storage Technology, Inc.
DS25023A
4
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
SST39LF/VF040 SST39LF/VF020 SST39LF/VF010
A11
A9
A8
A13
A14
A17
WE#
VDD
A18
A16
A15
A12
A7
A6
A5
A4
A11
A9
A8
A13
A14
A17
WE#
VDD
NC
A16
A15
A12
A7
A6
A5
A4
A11
A9
A8
A13
A14
NC
WE#
VDD
NC
A16
A15
A12
A7
A6
A5
A4
SST39LF/VF010 SST39LF/VF020 SST39LF/VF040
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Standard Pinout
Top View
Die Up
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1150 32-tsop WH P1.1
Figure 3: Pin Assignments for 32-lead TSOP (8mm x 14mm)
TOP VIEW (balls facing down)
SST39LF/VF010
SST39LF/VF020
6
A14 A13 A15 A16 NC NC
1
WE# NC NC NC DQ5 NC VDD DQ4
NC NC NC NC DQ2 DQ3 VDD NC
A7 NC A6
A5 DQ0 NC
NC DQ1
A3 A4 A2
A1
A0 CE# OE# VSS
A
D
E
B
C
F
G
A9 A8 A11 A12 NC A10 DQ6 DQ7
1150 48-tfbga B3K P2.0
A9 A8 A11 A12 NC A10 DQ6 DQ7
4
2
NC VSS
5
5
3
A14 A13 A15 A16 A17 NC
NC VSS
4
WE# NC NC NC DQ5 NC VDD DQ4
3
NC NC NC NC DQ2 DQ3 VDD NC
2
1
A7 NC A6
A5 DQ0 NC
A3 A4 A2
A1
A0 CE# OE# VSS
A
D
E
H
B
C
F
NC DQ1
G
1150 48-tfbga B3K P3.0
6
TOP VIEW (balls facing down)
H
TOP VIEW (balls facing down)
SST39LF/VF040
6
A14 A13 A15 A16 A17 NC
NC VSS
A9 A8 A11 A12 NC A10 DQ6 DQ7
4
3
2
1
WE# NC NC NC DQ5 NC VDD DQ4
NC NC NC NC DQ2 DQ3 VDD NC
A7 A18 A6
A5 DQ0 NC
A3 A4 A2
A1
A0 CE# OE# VSS
A
D
E
B
C
F
NC DQ1
G
1150 48-tfbga B3K P4.0
5
H
Figure 4: Pin Assignment for 48-ball TFBGA (6mm x 8mm) for 1 Mbit, 2 Mbit, and 4 Mbit
©2011 Silicon Storage Technology, Inc.
DS25023A
5
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
TOP VIEW (balls facing down)
6
A2
A8
A9
A14
A13
A11
NC1
OE#
A10
CE#
5
A1
A17
A0
VDD WE#
DQ7 DQ5 DQ6
4
DQ3 DQ4
CE#
A16
A18
VSS
A12
A15
A7
A6
A5
A4
NC2
A3
A2
A1
B
C
D
E
F
G
H
DQ2
VSS
2
A0
DQ0 DQ1
1
A
1150 34-wfbga MM P5.0
3
J
Note: For SST39LF020, ball B3 is No Connect
For SST39LF010, balls B3 and A5 are No Connect
Figure 5: Pin Assignment for 34-ball WFBGA (4mm x 6mm) for 1 Mbit and 2 Mbit
Table 1: Pin Description
Symbol
Pin Name
Functions
AMS1-A0
Address Inputs
To provide memory addresses. During Sector-Erase AMS-A12 address lines will
select the sector. During Block-Erase AMS-A16 address lines will select the block.
DQ7-DQ0 Data Input/output To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
CE#
Chip Enable
To activate the device when CE# is low.
OE#
Output Enable
To gate the data output buffers.
WE#
Write Enable
To control the Write operations.
VDD
Power Supply
To provide power supply voltage:
VSS
Ground
NC
No Connection
3.0-3.6V for SST39LF010/020/040
2.7-3.6V for SST39VF010/020/040
Unconnected pins.
T1.1 25023
1. AMS = Most significant address
AMS = A16 for SST39LF/VF010, A17 for SST39LF/VF020, and A18 for SST39LF/VF040
©2011 Silicon Storage Technology, Inc.
DS25023A
6
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
A Microchip Technology Company
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Device Operation
Commands are used to initiate the memory operation functions of the device. Commands are written
to the device using standard microprocessor write sequences. A command is written by asserting WE#
low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever
occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first.
Read
The Read operation of the SST39LF010/020/040 and SST39VF010/020/040 devices are controlled by
CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for
device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE#
is the output control and is used to gate data from the output pins. The data bus is in high impedance
state when either CE# or OE# is high. Refer to the Read cycle timing diagram for further details (Figure
6).
Byte-Program Operation
The SST39LF010/020/040 and SST39VF010/020/040 are programmed on a byte-by-byte basis.
Before programming, the sector where the byte exists must be fully erased. The Program operation is
accomplished in three steps. The first step is the three-byte load sequence for Software Data Protection. The second step is to load byte address and byte data. During the Byte-Program operation, the
addresses are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is
latched on the rising edge of either CE# or WE#, whichever occurs first. The third step is the internal
Program operation which is initiated after the rising edge of the fourth WE# or CE#, whichever occurs
first. The Program operation, once initiated, will be completed, within 20 µs. See Figures 7 and 8 for
WE# and CE# controlled Program operation timing diagrams and Figure 17 for flowcharts. During the
Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program
operation, the host is free to perform additional tasks. Any commands written during the internal Program operation will be ignored.
Sector-Erase Operation
The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The
sector architecture is based on uniform sector size of 4 KByte. The Sector-Erase operation is initiated
by executing a six-byte command sequence with Sector-Erase command (30H) and sector address
(SA) in the last bus cycle. The sector address is latched on the falling edge of the sixth WE# pulse,
while the command (30H) is latched on the rising edge of the sixth WE# pulse. The internal Erase
operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data#
Polling or Toggle Bit methods. See Figure 11 for timing waveforms. Any commands written during the
Sector-Erase operation will be ignored.
Chip-Erase Operation
The SST39LF010/020/040 and SST39VF010/020/040 devices provide a Chip-Erase operation, which
allows the user to erase the entire memory array to the ‘1’s state. This is useful when the entire device
must be quickly erased.
The Chip-Erase operation is initiated by executing a six- byte Software Data Protection command
sequence with Chip-Erase command (10H) with address 5555H in the last byte sequence. The internal
Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the
©2011 Silicon Storage Technology, Inc.
DS25023A
7
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
A Microchip Technology Company
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
internal Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the command sequence, Figure 12 for timing diagram, and Figure 20 for the flowchart. Any commands written
during the Chip-Erase operation will be ignored.
Write Operation Status Detection
The SST39LF010/020/040 and SST39VF010/020/040 devices provide two software means to detect
the completion of a Write (Program or Erase) cycle, in order to optimize the system write cycle time.
The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-ofWrite detection mode is enabled after the rising edge of WE# which initiates the internal Program or
Erase operation.
The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a
Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this
occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with
either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software
routine should include a loop to read the accessed location an additional two (2) times. If both reads
are valid, then the device has completed the Write cycle, otherwise the rejection is valid.
©2011 Silicon Storage Technology, Inc.
DS25023A
8
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
A Microchip Technology Company
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Data# Polling (DQ7)
When the SST39LF010/020/040 and SST39VF010/020/040 are in the internal Program operation, any
attempt to read DQ7 will produce the complement of the true data. Once the Program operation is
completed, DQ7 will produce true data. Note that even though DQ7 may have valid data immediately
following completion of an internal Write operation, the remaining data outputs may still be invalid: valid
data on the entire data bus will appear in subsequent successive Read cycles after an interval of 1 µs.
During internal Erase operation, any attempt to read DQ7 will produce a “0”. Once the internal Erase
operation is completed, DQ7 will produce a “1”. The Data# Polling is valid after the rising edge of fourth
WE# (or CE#) pulse for Program operation. For Sector- or Chip-Erase, the Data# Polling is valid after
the rising edge of sixth WE# (or CE#) pulse. See Figure 9 for Data# Polling timing diagram and Figure
18 for a flowchart.
Toggle Bit (DQ6)
During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce
alternating ‘0’s and ‘1’s, i.e., toggling between 0 and 1. When the internal Program or Erase operation
is completed, the toggling will stop. The device is then ready for the next operation. The Toggle Bit is
valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector- or ChipErase, the Toggle Bit is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 10 for Toggle Bit timing diagram and Figure 18 for a flowchart.
Data Protection
The SST39LF010/020/040 and SST39VF010/020/040 provide both hardware and software features to
protect nonvolatile data from inadvertent writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a Write cycle.
VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V.
Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down.
©2011 Silicon Storage Technology, Inc.
DS25023A
9
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
Software Data Protection (SDP)
The SST39LF010/020/040 and SST39VF010/020/040 provide the JEDEC approved Software Data
Protection scheme for all data alteration operation, i.e., Program and Erase. Any Program operation
requires the inclusion of a series of three-byte sequence. The three-byte load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or power-down. Any Erase operation requires the inclusion of six-byte load
sequence. These devices are shipped with the Software Data Protection permanently enabled. See
Table 4 for the specific software command codes. During SDP command sequence, invalid commands
will abort the device to read mode, within TRC.
Product Identification
The Product Identification mode identifies the devices as the SST39LF/VF010, SST39LF/VF020, and
SST39LF/VF040 and manufacturer as SST. This mode may be accessed by software operations.
Users may use the Software Product Identification operation to identify the part (i.e., using the device
ID) when using multiple manufacturers in the same socket. For details, see Table 4 for software operation, Figure 13 for the Software ID Entry and Read timing diagram, and Figure 19 for the Software ID
entry command sequence flowchart.
Table 2: Product Identification
Address
Data
0000H
BFH
SST39LF/VF010
0001H
D5H
SST39LF/VF020
0001H
D6H
SST39LF/VF040
0001H
D7H
Manufacturer’s ID
Device ID
T2.1 25023
Product Identification Mode Exit/Reset
In order to return to the standard Read mode, the Software Product Identification mode must be exited.
Exit is accomplished by issuing the Software ID Exit command sequence, which returns the device to
the Read operation. Please note that the Software ID Exit command is ignored during an internal Program or Erase operation. See Table 4 for software command codes, Figure 14 for timing waveform,
and Figure 19 for a flowchart.
©2011 Silicon Storage Technology, Inc.
DS25023A
10
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
Operations
Table 3: Operation Modes Selection
Mode
CE#
OE#
WE#
Read
Program
DQ
Address
VIL
VIL
VIL
VIH
VIH
DOUT
AIN
VIL
DIN
AIN
VIH
VIL
X1
Sector address,
XXH for Chip-Erase
Erase
VIL
Standby
VIH
X
X
High Z
X
X
VIL
X
High Z/ DOUT
X
X
X
VIH
High Z/ DOUT
X
VIL
VIL
VIH
Write Inhibit
Product Identification
Software Mode
See Table 4
T3.4 25023
1. X can be VIL or VIH, but no other value.
Table 4: Software Command Sequence
Command
Sequence
1st Bus
Write Cycle
2nd Bus
Write Cycle
Addr1
Addr1
Data
3rd Bus
Write Cycle
Data Addr1
4th Bus
Write Cycle
Data Addr1
BA2
Data
5th Bus
Write Cycle
Addr1
6th Bus
Write Cycle
Data Addr1
Data
Data
Byte-Program
5555H AAH 2AAAH
55H
5555H A0H
Sector-Erase
5555H AAH 2AAAH
55H
5555H
80H
5555H AAH 2AAAH
55H
SAX3
30H
Chip-Erase
5555H AAH 2AAAH
55H
5555H
80H
5555H AAH 2AAAH
55H
5555H
10H
Software ID
Entry4,5
5555H AAH 2AAAH
55H
5555H
90H
55H
5555H
F0H
Software ID Exit6
Software ID Exit6
XXH
F0H
5555H AAH 2AAAH
T4.2 25023
1. Address format A14-A0 (Hex),
Addresses AMS-A15 can be VIL or VIH, but no other value, for the Command sequence.
AMS = Most significant address
AMS = A16 for SST39LF/VF010, A17 for SST39LF/VF020, and A18 for SST39LF/VF040
2. BA = Program Byte address
3. SAX for Sector-Erase; uses AMS-A12 address lines
4. The device does not remain in Software Product ID mode if powered down.
5. With AMS-A1 = 0; SST Manufacturer’s ID = BFH, is read with A0 = 0,
SST39LF/VF010 Device ID = D5H, is read with A0 = 1,
SST39LF/VF020 Device ID = D6H, is read with A0 = 1,
SST39LF/VF040 Device ID = D7H, is read with A0 = 1.
6. Both Software ID Exit operations are equivalent
©2011 Silicon Storage Technology, Inc.
DS25023A
11
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature1 . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Excluding certain with-Pb 32-PLCC units, all packages are 260°C capable in both non-Pb and with-Pb solder versions.
Certain with-Pb 32-PLCC package types are capable of 240°C for 10 seconds; please consult the factory for the latest
information.
2. Outputs shorted for no more than one second. No more than one output shorted at a time.
Table 5: Operating Range SST39LF010/020/040
Range
Commercial
Ambient Temp
VDD
0°C to +70°C
3.0-3.6V
T5.1 25023
Table 6: Operating Range SST39VF010/020/040
Range
Commercial
Industrial
Ambient Temp
VDD
0°C to +70°C
2.7-3.6V
-40°C to +85°C
2.7-3.6V
T6.1 25023
Table 7: AC Conditions of Test1
Input Rise/Fall Time
Output Load
CL = 30 pF for SST39LF010/020/040
5ns
CL = 100 pF for SST39VF010/020/040
T7.1 25023
1. See Figures 15 and 16
©2011 Silicon Storage Technology, Inc.
DS25023A
12
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
Table 8: DC Operating Characteristics -VDD = 3.0-3.6V for SST39LF010/020/040 and 2.73.6V for SST39VF010/020/0401
Limits
Symbol
Parameter
IDD
Power Supply Current
Min
Max
Units
Test Conditions
Address input=VILT/VIHT, at f=1/TRC Min
VDD=VDD Max
Read2
20
mA
CE#=VIL, OE#=WE#=VIH, all I/Os open
Program and Erase3
30
mA
CE#=WE#=VIL, OE#=VIH
ISB
Standby VDD Current
15
µA
CE#=VIHC, VDD=VDD Max
ILI
Input Leakage Current
1
µA
VIN=GND to VDD, VDD=VDD Max
ILO
Output Leakage Current
10
µA
VOUT=GND to VDD, VDD=VDD Max
VIL
Input Low Voltage
0.8
V
VDD=VDD Min
VIH
Input High Voltage
0.7VDD
V
VDD=VDD Max
VIHC
Input High Voltage (CMOS)
VDD-0.3
V
VDD=VDD Max
VOL
Output Low Voltage
V
IOL=100 µA, VDD=VDD Min
VOH
Output High Voltage
V
IOH=-100 µA, VDD=VDD Min
0.2
VDD-0.2
T8.7 25023
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
(room temperature), and VDD = 3V for VF devices. Not 100% tested.
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
3. 30 mA max for Erase operations in the industrial temperature range.
Table 9: Recommended System Power-up Timings
Symbol
Parameter
TPU-READ1
TPU-WRITE1
Minimum
Units
Power-up to Read Operation
100
µs
Power-up to Program/Erase Operation
100
µs
T9.1 25023
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 10:Capacitance (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
CI/O
1
CIN1
Description
Test Condition
Maximum
I/O Pin Capacitance
VI/O = 0V
12 pF
Input Capacitance
VIN = 0V
6 pF
T10.0 25023
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 11:Reliability Characteristics
Symbol
Parameter
Minimum Specification
Units
Test Method
NEND1,2
Endurance
10,000
Cycles
JEDEC Standard A117
100
Years
JEDEC Standard A103
100 + IDD
mA
JEDEC Standard 78
TDR1
Data Retention
ILTH1
Latch Up
T11.3 25023
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating
would result in a higher minimum specification.
©2011 Silicon Storage Technology, Inc.
DS25023A
13
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
AC Characteristics
Table 12:Read Cycle Timing Parameters - VDD = 3.0-3.6V for SST39LF010/020/040 and
2.7-3.6V for SST39VF010/020/040
SST39LF010-45
SST39LF020-45
SST39LF040-45
Symbol
Parameter
TRC
Read Cycle Time
Min
Max
45
SST39LF020-55
SST39LF040-55
Min
Max
SST39VF010-70
SST39VF020-70
SST39VF040-70
Min
55
Max
Units
70
ns
TCE
Chip Enable Access Time
45
55
70
ns
TAA
Address Access Time
45
55
70
ns
TOE
Output Enable Access Time
TCLZ1
CE# Low to Active Output
0
TOLZ1
OE# Low to Active Output
0
TCHZ1
CE# High to High-Z Output
TOHZ1
TOH1
Output Hold from Address Change
30
30
ns
0
ns
15
15
0
ns
0
0
15
OE# High to High-Z Output
35
0
15
0
25
ns
25
ns
0
ns
T12.2 25023
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 13:Program/Erase Cycle Timing Parameters
Symbol
Parameter
Min
Max
Units
20
µs
TBP
Byte-Program Time
TAS
Address Setup Time
0
TAH
Address Hold Time
30
ns
TCS
WE# and CE# Setup Time
0
ns
ns
TCH
WE# and CE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
10
ns
TCP
CE# Pulse Width
40
ns
TWP
WE# Pulse Width
40
ns
TWPH1
WE# Pulse Width High
30
ns
TCPH1
CE# Pulse Width High
30
ns
TDS
Data Setup Time
40
ns
TDH1
Data Hold Time
0
TIDA1
Software ID Access and Exit Time
ns
150
ns
TSE
Sector-Erase
25
ms
TSCE
Chip-Erase
100
ms
T13.1 25023
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
©2011 Silicon Storage Technology, Inc.
DS25023A
14
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
TRC
TAA
ADDRESS AMS-0
TCE
CE#
TOE
OE#
TOHZ
TOLZ
VIH
WE#
TCLZ
DQ7-0
TOH
HIGH-Z
Note:
TCHZ
DATA VALID
HIGH-Z
DATA VALID
AMS = Most significant address
AMS = A16 for SST39LF/VF010, A17 for SST39LF/VF020 and A18 for SST39LF/VF040
1150 F03.0
Figure 6: Read Cycle Timing Diagram
INTERNAL PROGRAM OPERATION STARTS
TBP
5555
ADDRESS AMS-0
2AAA
5555
ADDR
TAH
TDH
TWP
WE#
TAS
TDS
TWPH
OE#
TCH
CE#
TCS
DQ7-0
AA
55
A0
DATA
SW0
SW1
SW2
BYTE
(ADDR/DATA)
1150 F04.0
Note:
AMS = Most significant address
AMS = A16 for SST39LF/VF010, A17 for SST39LF/VF020 and A18 for SST39LF/VF040
Figure 7: WE# Controlled Program Cycle Timing Diagram
©2011 Silicon Storage Technology, Inc.
DS25023A
15
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
INTERNAL PROGRAM OPERATION STARTS
TBP
5555
ADDRESS AMS-0
2AAA
5555
ADDR
TAH
TDH
TCP
CE#
TAS
TDS
TCPH
OE#
TCH
WE#
TCS
DQ7-0
Note:
AA
55
A0
DATA
SW0
SW1
SW2
BYTE
(ADDR/DATA)
AMS = Most significant address
AMS = A16 for SST39LF/VF010, A17 for SST39LF/VF020 and A18 for SST39LF/VF040
1150 F05.0
Figure 8: CE# Controlled Program Cycle Timing Diagram
ADDRESS AMS-0
TCE
CE#
TOEH
TOES
OE#
TOE
WE#
D
DQ7
Note:
D#
D#
D
AMS = Most significant address
AMS = A16 for SST39LF/VF010, A17 for SST39LF/VF020 and A18 for SST39LF/VF040
1150 F06.0
Figure 9: Data# Polling Timing Diagram
©2011 Silicon Storage Technology, Inc.
DS25023A
16
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
ADDRESS AMS-0
TCE
CE#
TOEH
TOES
TOE
OE#
WE#
DQ6
TWO READ CYCLES
Note:
WITH SAME OUTPUTS
AMS = Most significant address
AMS = A16 for SST39LF/VF010, A17 for SST39LF/VF020 and A18 for SST39LF/VF040
1150 F07.0
Figure 10:Toggle Bit Timing Diagram
TSE
SIX-BYTE CODE FOR SECTOR-ERASE
ADDRESS AMS-0
5555
2AAA
5555
5555
2AAA
SAX
CE#
OE#
TWP
WE#
DQ7-0
AA
55
80
AA
55
30
SW0
SW1
SW2
SW3
SW4
SW5
Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are
interchageable as long as minmum timings are met. (See Table 10)
SAX = Sector Address
1150 F08.0
AMS = Most significant address
AMS = A16 for SST39LF/VF010, A17 for SST39LF/VF020, and A18 for SST39LF/VF040
Figure 11:WE# Controlled Sector-Erase Timing Diagram
©2011 Silicon Storage Technology, Inc.
DS25023A
17
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
TSCE
SIX-BYTE CODE FOR CHIP-ERASE
ADDRESS AMS-0
5555
2AAA
5555
5555
2AAA
5555
CE#
OE#
TWP
WE#
DQ7-0
AA
55
80
AA
55
10
SW0
SW1
SW2
SW3
SW4
SW5
Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are
interchageable as long as minmum timings are met. (See Table 10)
1150 F17.0
AMS = Most significant address
AMS = A16 for SST39LF/VF010, A17 for SST39LF/VF020, and A18 for SST39LF/VF040
Figure 12:WE# Controlled Chip-Erase Timing Diagram
Three-byte Sequence for
Software ID Entry
ADDRESS A14-0
5555
2AAA
5555
0000
0001
CE#
OE#
TIDA
TWP
WE#
TWPH
DQ7-0
TAA
AA
55
90
SW0
SW1
SW2
BF
Device ID
1150 F09.2
Note: Device ID = D5H for SST39LF/VF010, D6H for SST39LF/VF020, and D7H for SST39LF/VF040.
Figure 13:Software ID Entry and Read
©2011 Silicon Storage Technology, Inc.
DS25023A
18
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
THREE-BYTE SEQUENCE FOR
SOFTWARE ID EXIT AND RESET
ADDRESS A14-0
5555
2AAA
AA
DQ7-0
5555
55
F0
TIDA
CE#
OE#
TWP
WE#
TWHP
SW0
SW1
SW2
1150 F10.0
Figure 14:Software ID Exit and Reset
VIHT
INPUT
VIT
REFERENCE POINTS
VOT
OUTPUT
VILT
1150 F12.1
AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic
“0”. Measurement reference points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input
rise and fall times (10%  90%) are <5 ns.
Note: VIT - VINPUT Test
VOT - VOUTPUT Test
VIHT - VINPUT HIGH Test
VILT - VINPUT LOW Test
Figure 15:AC Input/Output Reference Waveforms
TO TESTER
TO DUT
CL
1150 F11.1
Figure 16:A Test Load Example
©2011 Silicon Storage Technology, Inc.
DS25023A
19
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
A Microchip Technology Company
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Start
Load data: AAH
Address: 5555H
Load data: 55H
Address: 2AAAH
Load data: A0H
Address: 5555H
Load Byte
Address/Byte
Data
Wait for end of
Program (TBP,
Data# Polling
bit, or Toggle bit
operation)
Program
Completed
1150 F13.1
Figure 17:Byte-Program Algorithm
©2011 Silicon Storage Technology, Inc.
DS25023A
20
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
Internal Timer
Toggle Bit
Data# Polling
Byte-Program/
Erase
Initiated
Byte-Program/
Erase
Initiated
Byte-Program/
Erase
Initiated
Read byte
Read DQ7
Wait TBP,
TSCE, or TSE
Read same
byte
Program/Erase
Completed
No
Is DQ7 =
true data
Yes
No
Does DQ6
match
Program/Erase
Completed
Yes
Program/Erase
Completed
1150 F14.0
Figure 18:Wait Options
©2011 Silicon Storage Technology, Inc.
DS25023A
21
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
Software ID Entry
Command Sequence
Software ID Exit
Reset Command Sequence
Load data: AAH
Address: 5555H
Load data: AAH
Address: 5555H
Load data: F0H
Address: XXH
Load data: 55H
Address: 2AAAH
Load data: 55H
Address: 2AAAH
Wait TIDA
Load data: 90H
Address: 5555H
Load data: F0H
Address: 5555H
Return to normal
operation
Wait TIDA
Wait TIDA
Read Software ID
Return to normal
operation
1150 F15.2
Figure 19:Software ID Command Flowcharts
©2011 Silicon Storage Technology, Inc.
DS25023A
22
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
Chip-Erase
Command Sequence
Sector-Erase
Command Sequence
Load data: AAH
Address: 5555H
Load data: AAH
Address: 5555H
Load data: 55H
Address: 2AAAH
Load data: 55H
Address: 2AAAH
Load data: 80H
Address: 5555H
Load data: 80H
Address: 5555H
Load data: AAH
Address: 5555H
Load data: AAH
Address: 5555H
Load data: 55H
Address: 2AAAH
Load data: 55H
Address: 2AAAH
Load data: 10H
Address: 5555H
Load data: 30H
Address: SAX
Wait TSCE
Wait TSE
Chip erased
to FFH
Sector erased
to FFH
1150 F16.1
Figure 20:Erase Command Sequence
©2011 Silicon Storage Technology, Inc.
DS25023A
23
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
Product Ordering Information
SST
39 VF
XX XX
010
XXX
-
45 XX -
4C
XX
-
NHE
XXX
Environmental Attribute
E1 = non-Pb
Package Modifier
H = 32 leads
K = 48 balls
M = 34 balls (54 possible positions)
Package Type
B3 = TFBGA (0.8mm pitch, 6mm x 8mm)
N = PLCC
M = WFBGA (0.5mm pitch, 4mm x 6mm)
W = TSOP (type 1, die up, 8mm x 14mm)
Temperature Range
C = Commercial = 0°C to +70°C
I = Industrial = -40°C to +85°C
Minimum Endurance
4 = 10,000 cycles
Read Access Speed
45 = 45 ns
55 = 55 ns
70 = 70 ns
Device Density
040 = 4 Mbit
020 = 2 Mbit
010 = 1 Mbit
Voltage
L = 3.0-3.6V
V = 2.7-3.6V
Product Series
39 = Multi-Purpose Flash
1. Environmental suffix “E” denotes non-Pb solder.
SST non-Pb solder devices are RoHS compliant.
©2011 Silicon Storage Technology, Inc.
DS25023A
24
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
A Microchip Technology Company
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Valid combinations for SST39LF010
SST39LF010-45-4C-NHE
SST39LF010-45-4C-MME
SST39LF010-45-4C-WHE
SST39LF010-45-4C-B3KE
Valid combinations for SST39VF010
SST39VF010-70-4C-NHE
SST39VF010-70-4I-NHE
SST39VF010-70-4C-WHE
SST39VF010-70-4I-WHE
SST39VF010-70-4C-B3KE
SST39VF010-70-4I-B3KE
Valid combinations for SST39LF020
SST39LF020-45-4C-NHE
SST39LF020-45-4C-MME
SST39LF020-55-4C-NHE
SST39LF020-45-4C-WHE
SST39LF020-45-4C-B3KE
SST39LF020-55-4C-WHE
Valid combinations for SST39VF020
SST39VF020-70-4C-NHE
SST39VF020-70-4I-NHE
SST39VF020-70-4C-WHE
SST39VF020-70-4I-WHE
SST39VF020-70-4C-B3KE
SST39VF020-70-4I-B3KE
Valid combinations for SST39LF040
SST39LF040-45-4C-NHE
SST39LF040-55-4C-NHE
SST39LF040-45-4C-WHE
SST39LF040-55-4C-WHE
SST39LF040-45-4C-B3KE
Valid combinations for SST39VF040
SST39VF040-70-4C-NHE
SST39VF040-70-4I-NHE
SST39VF040-70-4C-WHE
SST39VF040-70-4I-WHE
SST39VF040-70-4C-B3KE
SST39VF040-70-4I-B3KE
Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST
sales representative to confirm availability of valid combinations and to determine availability of new combinations.
©2011 Silicon Storage Technology, Inc.
DS25023A
25
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
Packaging Diagrams
TOP VIEW
Optional
Pin #1
Identifier .048
.042
.495
.485
.453
.447
2
1
32
SIDE VIEW
.112
.106
.020 R. .029 x 30°
MAX. .023
.040 R.
.030
.042
.048
.595 .553
.585 .547
BOTTOM VIEW
.021
.013
.400 .530
BSC .490
.032
.026
.050
BSC
.015 Min.
.095
.075
.050
BSC
.140
.125
.032
.026
Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in inches (max/min).
3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches.
32-plcc-NH-3
4. Coplanarity: 4 mils.
Figure 21:32-lead Plastic Lead Chip Carrier (PLCC)
SST Package Code: NH
©2011 Silicon Storage Technology, Inc.
DS25023A
26
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
TOP VIEW
BOTTOM VIEW
5.60
8.00 0.10
0.45 0.05
(48X)
0.80
6
6
5
5
4.00
4
4
6.00 0.10
3
3
2
2
1
1
0.80
A B C D E F G H
A1 CORNER
SIDE VIEW
H G F E D C B A
A1 CORNER
1.10 0.10
0.12
SEATING PLANE
1mm
0.35 0.05
Note:
1. Complies with JEDEC Publication 95, MO-210, variant AB-1 , although some dimensions may be more stringent.
2. All linear dimensions are in millimeters.
3. Coplanarity: 0.12 mm
4. Ball opening size is 0.38 mm ( 0.05 mm)
48-tfbga-B3K-6x8-450mic-5
Figure 22:48-ball Thin-profile, Fine-pitch Ball Grid Array (TFBGA) 6mm x 8mm
SST Package Code: B3K
©2011 Silicon Storage Technology, Inc.
DS25023A
27
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
1.05
0.95
Pin # 1 Identifier
0.50
BSC
8.10
7.90
0.27
0.17
0.15
0.05
12.50
12.30
DETAIL
1.20
max.
0.70
0.50
14.20
13.80
0°- 5°
0.70
0.50
Note:
1. Complies with JEDEC publication 95 MO-142 BA dimensions,
although some dimensions may be more stringent.
32-tsop-WH-7
1mm
2. All linear dimensions are in millimeters (max/min).
3. Coplanarity: 0.1 mm
4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.
Figure 23:32-lead Thin Small Outline Package (TSOP) 8mm x 14mm
SST Package Code: WH
©2011 Silicon Storage Technology, Inc.
DS25023A
28
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
TOP VIEW
6.00
BOTTOM VIEW
0.08
4.00
0.50
6
5
4
3
2
1
4.00
0.08
A1 CORNER
6
5
4
3
2
1
2.50
0.50
A B C D E F G H J
J H G F E D C B A
A1 INDICATOR
0.63
DETAIL
0.10
0.32 0.05
(34X)
4
SIDE VIEW
0.08
SEATING PLANE
0.20
Note:
0.06
1mm
1. Although many dimensions are similar to those of JEDEC Publication 95, MO-225, this specific package is not registered.
2. All linear dimensions are in millimeters.
3. Coplanarity: 0.08 mm
4. No ball is present in position A1; a gold-colored indicator is present.
34-wfbga-MM-4x6-32mic-1
5. Ball opening size is 0.29 mm ( 0.05 mm)
Figure 24: 34-ball Very-very-thin-profile, Fine-pitch Ball Grid Array (WFBGA) 4mm x 6mm x.63mm
SST Package Code: MM
©2011 Silicon Storage Technology, Inc.
DS25023A
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1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
A Microchip Technology Company
Data Sheet
Table 14:Revision History
Number
Description
Date
02
•
•
2000 Data Book
Changed speed from 45 ns to 55 ns for the SST39LF020 and
SST39LF040
03
•
2002 Data Book: Reintroduced the 45 ns parts for the SST39LF020 and
SST39LF040
Feb 2002
04
•
•
Added the B3K package for the 2 Mbit devices
Added footnote in Table 8 to indicate IDD Write is 30 mA max for Erase
operations in the Industrial temperature range.
Oct 2002
05
•
Changes to Table 8 on page 13
Mar 2003
01
Feb 2000
Aug 2000
– Added footnote for MPF power usage and Typical conditions
– Clarified the Test Conditions for Power Supply Current and Read parameters
– Clarified IDD Write to be Program and Erase
– Corrected IDD Program and Erase from 20 mA to 30 mA
•
Part number changes - see page 24 for additional information
06
•
Added new “MM” Micro-Package MPNs for 1M and 2M LF parts- see
page 24
Oct 2003
07
•
•
•
2004 Data Book
Added non-Pb MPNs and removed footnote (See page 24)
Updated B3K and MM package diagrams
Nov 2003
08
•
•
•
Added RoHS Compliant statement.
Added 4 MBit to Figure 4.
Revised Absolute Max Stress Ratings for Surface Mount Solder Reflow
Temperature
Removed SST39VFxxx-90 Timing Parameters from Figure 12.
Added Footnote and removed Read Access Speed 90 = 90 to Product
Ordering Information.
Removed 90 part numbers Valid Combinations lists
Edited page Valid Combinations on page 21. Changed 39LF040-70-4CB3KE to 39LF040-45-4C-B3KE
Dec 2005
Removed leaded parts
Added package YME
Revised “Product Ordering Information” on page 24
Changed endurance from 10,000 to 100,000 in Product Description, page
1
Nov 2008
13
•
•
•
•
14
•
EOL of SST39LF010-45-4C-YME. Replacement part is SST39LF010-454C-MME in this document.
Removed all references to the YME package.
Jan 2010
EOL of SST39LF512 and SST39VF512 parts. Replacement parts are
SST39LF010 and SST39VF010.
Applied new document format.
Released document under letter revision system.
Updated spec number S71150 to DS25023.
Aug 2011
•
•
09
10
11
12
•
•
•
A
•
•
•
•
©2011 Silicon Storage Technology, Inc.
Jan 2006
Feb 2009
Apr 2009
Sep 2009
DS25023A
30
08/11
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
A Microchip Technology Company
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
ISBN:978-1-61341-479-8
© 2011 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved.
SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and
registered trademarks mentioned herein are the property of their respective owners.
Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current
package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging.
Memory sizes denote raw storage capacity; actual usable capacity may be less.
SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of
Sale.
For sales office locations and information, please see www.microchip.com.
Silicon Storage Technology, Inc.
A Microchip Technology Company
www.microchip.com
©2011 Silicon Storage Technology, Inc.
DS25023A
31
08/11
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