RJL6013DPE Datasheet

RJL6013DPE Datasheet
Preliminary Datasheet
RJL6013DPE
R07DS0437EJ0200
(Previous: REJ03G1748-0100)
Rev.2.00
Jun 16, 2011
Silicon N Channel MOS FET
High Speed Power Switching
Features
 Built-in fast recovery diode
 Low on-resistance
RDS(on) = 0.66  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name LDPAK(S)-(1))
D
4
1
2
1. Gate
2. Drain
3. Source
4. Drain
G
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
Note1
ID (pulse)
IDR
Note1
IDR (pulse)
Note3
IAP
Note3
EAR
Pch Note2
ch-c
Tch
Tstg
Ratings
600
30
11
33
11
33
4
0.87
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
R07DS0437EJ0200 Rev.2.00
Jun 16, 2011
Page 1 of 6
RJL6013DPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
600
—
—
2.0
—
Typ
—
—
—
—
0.66
Max
—
10
±0.1
4.0
0.81
Unit
V
A
A
V

Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
—
—
—
—
—
—
—
—
—
—
—
1400
135
17
30
20
89
16
38
6.6
17.2
1.0
—
—
—
—
—
—
—
—
—
—
1.7
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
trr
—
180
—
ns
Test conditions
ID = 10 mA, VGS = 0
VDS = 600 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 5.5 A, VGS = 10 V Note4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 5.5 A
VGS = 10 V
RL = 54.5 
Rg = 10 
VDD = 480 V
VGS = 10 V
ID = 11 A
IF = 11 A, VGS = 0 Note4
IF = 11 A, VGS = 0
diF/dt = 100 A/s
Notes: 4. Pulse test
R07DS0437EJ0200 Rev.2.00
Jun 16, 2011
Page 2 of 6
RJL6013DPE
Preliminary
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
20
100
Drain Current ID (A)
10
100
1
μs
Operation in this
area is limited by
RDS(on)
0.1
Ta = 25°C
Pulse Test
μs
=
PW
Drain Current ID (A)
10
0.01
5.6 V
6V
7V
16
5.4 V
10 V
5.2 V
12
5.0 V
8
4.8 V
4
4.6 V
VGS = 4.4 V
Tc = 25°C
1 shot
0.001
0.1
1
10
100
8
12
16
20
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
RDS(on) (Ω)
VDS = 10 V
Pulse Test
10
Tc = 75°C
25°C
1
−25°C
0.1
0
2
4
6
8
10
VGS = 10 V
Ta = 25°C
Pulse Test
1
0.1
10
1
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Body-Drain Diode Reverse
Recovery Time (Typical)
2.0
1.5
ID = 11 A
5.5 A
1.0
3A
0.5
0
-25
100
1000
VGS = 10 V
Ta = 25°C
Pulse Test
Reverse Recovery Time trr (ns)
Drain Current ID (A)
4
Drain to Source Voltage VDS (V)
100
Static Drain to Source on State Resistance
RDS(on) (Ω)
0
1000
100
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
10
0
25
50
75
100 125 150
Case Temperature Tc (°C)
R07DS0437EJ0200 Rev.2.00
Jun 16, 2011
1
10
100
Reverse Drain Current IDR (A)
Page 3 of 6
RJL6013DPE
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Ta = 25°C
100
Coss
Crss
10
1
0
VGS = 0
f = 1 MHz
50
100
150
200
250
300
Reverse Drain Current IDR (A)
VDS
12
400
8
200
4
VDD = 480 V
300 V
100 V
0
8
16
24
32
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
VGS = 0
Ta = 25°C
Pulse Test
12
8
4
0
VGS
VDD = 100 V
300 V
480 V
600
Drain to Source Voltage VDS (V)
20
16
16
ID = 11 A
Ta = 25°C
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
R07DS0437EJ0200 Rev.2.00
Jun 16, 2011
Gate to Source Cutoff Voltage VGS(off) (V)
Capacitance C (pF)
Ciss
1000
800
5
Gate to Source Voltage VGS (V)
10000
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics (Typical)
40
VDS = 10 V
4
ID = 10 mA
1 mA
3
2
0.1 mA
1
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Page 4 of 6
RJL6013DPE
Preliminary
3
γ s (t)
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.03
0.1
θch – c(t) = γs (t) • θch – c
0.05
θch – c = 1.25°C/ W, Tc = 25°C
PDM
0.02
e
1
0.0
uls
tp
o
h
1s
0.01
10 μ
D=
PW
T
PW
T
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
D.U.T.
RL
10 Ω
Vin
10 V
90%
Vout
Monitor
Vin Monitor
Vin
Vout
VDD
= 300 V
10%
10%
90%
td(on)
R07DS0437EJ0200 Rev.2.00
Jun 16, 2011
10%
tr
90%
td(off)
tf
Page 5 of 6
RJL6013DPE
Preliminary
Package Dimensions
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.]
1.30g
7.8
6.6
(1.5)
10.0
2.49 ± 0.2
0.2
0.1 +– 0.1
7.8
7.0
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(1)
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
1.3 ± 0.2
Ordering Information
Orderable Part Number
RJL6013DPE-00-J3
R07DS0437EJ0200 Rev.2.00
Jun 16, 2011
Quantity
1000 pcs
Shipping Container
Taping
Page 6 of 6
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