Migrate Macronix GL-E to S29GL

Migrate Macronix GL-E to S29GL
Migration from Macronix™ GL-E
(128-512 Mb) to Spansion® S29GL-S
Application Note
1. Introduction
This application note details how to migrate designs from Macronix 128 Mbit MX29GL128E, 256 Mbit
MX29GL256E, and 512 Mbit MX29GL512E flash memory devices to Spansion 128 Mbit 29GL128S, 256 Mbit
S29GL256S, and 512 Mbit S29GL512S MirrorBit® flash memory devices, respectively. The S29GL128S /
S29GL256S / S29GL512S devices are 3.0 volt-only Page Mode flash memory manufactured with 65 nm
MirrorBit Eclipse™ technology.
Spansion GL-S flash family devices are compatible with the Macronix 128 Mbit MX29GL128E,
256 Mbit MX29GL256E, and 512 Mbit MX29GL512E devices with respect to:
 Sector (or block) architecture,
 JEDEC standard compliant software command set.
2. Feature Comparison
Table 2.1 shows a feature comparison summary of the Macronix 512 Mbit MX29GL512E flash memory to the
Spansion 512 Mbit S29GL512S MirrorBit flash family device .
Table 2.1 Feature Comparison — Macronix 512 Mbit MX29GL512E to
Spansion 512 Mbit S29GL512S (Sheet 1 of 2)
Macronix
MX29GL512E
2.7~3.6V
2.7~3.6V
VIO
1.65~3.6V
N/A
Random
100 ns (2.7 to 3.6V)
110 ns (2.7 to 3.6V)
110 ns (Low VIO)
120 ns (Low VIO)
100 ns (3.0 to 3.6V)
110 ns (2.7 to 3.6V)
Page
15 ns (2.7 to 3.6V)
20 ns (2.7 to 3.6V)
25 ns (Low VIO)
30 ns (Low VIO)
25 ns
Test Condition (Output Load Capacitance)
30 pF
30 pF
Read Performance
Up to 98.5 MB/s
Up to 58.2 MB/s
Bus width
only x16
x8/x16
Sector
Uniform 128 kB
Uniform 128 kB
VCC
VCC
Spansion
S29GL512S
Access time
Program
256 word (512 Byte)
32 word (64 Byte)
Read
16 word (32 Byte)
8 word (16 Byte)
Page Size
Data#Polling or Status Register
Data#Polling and Status Register
Data#Polling
Unlock Bypass
No (Note 1)
Yes
Multi-sector Erase
No (Note 1)
Yes
Blank Check
Yes
No
OTP
512 Byte (256 Word) x 2
256 Byte (128 Word)
Publication Number Migrate_Macronix_GL-E_to_S29GL-S_AN
Revision 01
Issue Date October 6, 2011
A pplication
Note
Table 2.1 Feature Comparison — Macronix 512 Mbit MX29GL512E to
Spansion 512 Mbit S29GL512S (Sheet 2 of 2)
Spansion
Macronix
S29GL512S
MX29GL512E
Software
Password (64 bit)
Persistent Protection (Note 2)
Password (64 bit)
Persistent Protection (Note 2)
Hardware
WP# (Lowest or Highest address
sector)
WP# (Lowest or Highest address
sector)
56-Pin TSOP
64-Ball BGA
56-Pin TSOP
64-Ball BGA
70-Pin SSOP
Protection
Package
Notes:
1. Removed per legacy features.
2. Persistent Protection and Solid Write Protection are same function.
Table 2.2 shows a feature comparison summary of the Macronix 256 Mbit MX29GL256E and 128 Mbit
MX29GL128E flash memory to the Spansion 256 Mbit S29GL256S and 128 Mbit S29GL128S MirrorBit flash
family devices.
Table 2.2 Feature Comparison — Macronix 256 Mbit MX29GL256E and 128Mbit MX29GL128E to
Spansion 256 Mbit S29GL256S, and 128 Mbit S29GL128S
VCC
Spansion
Macronix
S29GL256S/128S
MX29GL256E/128E
VCC
2.7~3.6V
2.7~3.6V
VIO
1.65~3.6V
1.65~3.6V
Random
90 ns (2.7 to 3.6V)
100 ns (2.7 to 3.6V)
100 ns (Low VIO)
110 ns (Low VIO)
90 ns (3.0 to 3.6V)
100 ns (2.7 to 3.6V)
110 ns (Low VIO)
Page
15 ns (2.7 to 3.6V)
20 ns (2.7 to 3.6V)
25 ns (Low VIO)
30 ns (Low VIO)
25 ns (2.7~3.6V)
30 ns (Low VIO)
Access time
Test Condition (Output Load Capacitance)
30 pF
30 pF
Read Performance
Up to 101.6 MB/s
Up to 60.4 MB/s
Bus width
only x16
x8/x16
Uniform 128 kB
Uniform 128 kB
Sector
Program
256 word (512 Byte)
32 word (64 Byte)
Read
16 word (32 Byte)
8 word (16 Byte)
Data#Polling and Status Register
Data#Polling
Unlock Bypass
No (Note 1)
Yes
Multi-sector Erase
No (Note 1)
Yes
Blank Check
Yes
No
OTP
512 Byte (256 Word) x2
256 Byte (128 Word) x2
Software
Password (64 bit)
Persistent Protection (Note 2)
Password (64 bit)
Persistent Protection (Note 2)
Hardware
WP# (Lowest or Highest address
sector)
WP# (Lowest or Highest address
sector)
56-Pin TSOP
64-Ball BGA
56-Pin TSOP
64-Ball BGA
70-Pin SSOP
Page Size
Data#Polling or Status Register
Protection
Package
Notes:
1. Removed per legacy features.
2. Persistent Protection and Solid Write Protection are same function.
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Table 2.3 shows a comparison between Macronix and Spansion flash memory Erase and Program
Performance.
Table 2.3 Erase and Program Performance
Word w/o ACC
Spansion
Macronix
S29GL-S
MX29GL-E
Typ
Max
Typ
Max
125 µs
400 µs
11 µs
360 µs
Word w/ACC
N/A
11 µs
Write Buffer 2 Byte w/o ACC
125 µs
Write Buffer 32 Byte w/o ACC
160 µs
Write Buffer 64 Byte w/o ACC
175 µs
Write Buffer 128 Byte w/o ACC
198 µs
Write Buffer 256 Byte w/o ACC
239 µs
Write Buffer 512 Byte w/o ACC
340 µs
200 µs
Program
750 µs
Write Buffer 64 Byte w/ACC
100 µs
Program performance w/o ACC
1.5 MB/s (Typ)
Sector Erase
Erase
0.2s
320 kB/s (Typ)
1.1s
0.6s
5s
Erase performance (Typ)
655 kB/s (Note 1)
213 kB/s (Note 2)
Erase performance (Worst Case)
119 kB/s (Note 1)
25.6 kB/s (Note 2)
Notes:
1. Erase performance of S29GL-S is included pre-program time.
2. Erase performance of MX29GL-E is not included pre-program time.
3. DC Specification
The S29GL-S and MX29GL-E have primarily compatible specifications. Differences in DC Characteristics
between the devices are highlighted in Table 3.1. The potential impact of any parameter specification
differences should be evaluated and validated. Refer to the respective Macronix MX29GL-E and Spansion
S29GL-S data sheets to verify the most up to date specifications.
Table 3.1 DC Specification
Spansion
Macronix
S29GL-S
Min
MX29GL128/256E
Typ
Max
Input Load Current
+0.02 µA
±1.0 µA
Output Leakage Current
Min
Typ
MX29GL512E
Max
Min
Typ
± 2.0 µA
Max
± 4.0 µA
+0.02 µA
±1.0 µA
VCC Active Read Current (5 MHz)
55 mA
60 mA
30 mA
± 1.0 µA
50 mA
30 mA
± 1.0 µA
50 mA
VCC Intra-Page Read Current
9 mA
25 mA
6 mA
20 mA
6 mA
20 mA
VCC Active Erase/Program Current
45 mA
100 mA
26 mA
30 mA
26 mA
30 mA
VCC Standby Current
70 µA
100 µA
30 µA
100 µA
60 µA
200 µA
VCC Reset Current
10 mA
20 mA
30 µA
100 µA
60 µA
200 µA
Automatic Sleep Mode
3 mA
6 mA
30 µA
100 µA
60 µA
200 µA
VCC Current during power up
53 mA
80 mA
Input Low Voltage
-0.5V
0.2 x VIO
-0.1V
0.3 x VIO
-0.1V
0.3 x VIO
Input High Voltage
0.7 x VIO
VIO + 0.4V
0.7 x VIO
VIO + 0.3V
0.7 x VIO
VIO + 0.3V
Output Low Voltage
Output High Voltage
October 6, 2011
0.15 x VIO
0.85 x VIO
0.45V
0.85 x VIO
Migrate_Macronix_GL-E_to_S29GL-S_AN_01
0.45V
0.85 x VIO
3
A pplication
Note
4. Device ID
This section provides a comparison between Macronix and Spansion flash memory Device ID.
The GL-S flash only supports Autoselect Register access via software command sets. Macronix GL-E
supports Autoselect Register access via software command sets and high voltage method which requires VID
(nominally 12V) applied to Address input A9.
Table 4.1 Device ID
Spansion
Macronix
Address
S29GL512S
MX29GL512E
(Base)+00h
0001h
00C2h
Word1
(Base)+01h
227Eh
227Eh
Word2
(Base)+0Eh
2223h
2223h
Word3
(Base)+0Fh
2201h
2201h
Spansion
Macronix
Address
S29GL256S
MX29GL256E
Manufacturer ID
Device ID
Manufacturer ID
Device ID
(Base)+00h
0001h
00C2h
Cycle1
(Base)+01h
227Eh
227Eh
Cycle2
(Base)+0Eh
2222h
2222h
Cycle3
(Base)+0Fh
2201h
2201h
Spansion
Macronix
Address
S29GL128S
MX29GL128E
(Base)+00h
0001h
00C2h
Cycle1
(Base)+01h
227Eh
227Eh
Cycle2
(Base)+0Eh
2221h
2221h
Cycle3
(Base)+0Fh
2201h
2201h
Manufacturer ID
Device ID
5. Program Suspend / Resume
There are specification differences at program Suspend Resume Command and Specification between
Macronix and Spansion flash memory.
Table 5.1 Program Suspend / Resume Specification
Spansion
Macronix
S29GL-S
MX29GL-E
Typ
Erase
Erase Suspend Latency
Erase Suspend
Erase Resume to next Erase Suspend
Program
Program Suspend Latency
Program Suspend
Program Resume to next Program Suspend
Max
Typ
Max
40 µs
100 µs
400 µs
40 µs
100 µs
20 µs
Not defined
5 µs
GL-S has two commands for Program resume: the legacy combined Erase / Program Suspend and resume
command (B0h/30h command code), and the separate Program Suspend and Resume command
(51h/50h command code).
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Table 5.2 Program Suspend / Resume Command
Spansion
Macronix
S29GL-S
MX29GL-E
Program/Erase Suspend
B0h
B0h
Program/Erase Resume
30h
30h
Program Suspend Enhanced Method
51h
N/A
Program suspend Enhanced Method
50h
N/A
6. Power-Up Timing
This section provides a comparison between Macronix and Spansion flash memory power up timing.
Table 6.1 Power-up Timing
Spansion
Macronix
S29GL-S
MX29GL-E
Min
Min
VCC Setup Time to first access
300 µs
500 µs
VIO Setup Time to first access
300 µs
RESET# Low to CE# Low during embedded operation
35 µs
20 µs
RESET# Pulse Width during embedded operation
200 ns
10 µs
Time between RESET# (High) and CE# (Low)
50 ns
200 ns
7. Packaging
Several of the pin definitions have changed between Macronix and Spansion flash memory, see Table 7.1.
 WP#/ACC: GL-S does not support High Voltage Accelerated Programming, ACC is removed. No difference
on WP# function.
 BYTE#: GL-S supports only x16 data bus width, BYTE# is not required. This pin is not connected internally
and can float or be connected to VCC or GND.
 DQ15/A-1: GL-S supports only x16 data bus width, A-1 input is not required.
Table 7.1 Pin-out Difference
Spansion
Macronix
S29GL-S
MX29GL-E
Pin or Ball
TSOP Package
16
WP# (Note 1)
WP#/ACC
28
DNU (Note 2)
NC (Note 3)
51
DQ15
Q15/A-1
53
RFU (Note 4)
BYTE#
B4
WP# (Note 1)
WP#/ACC
E1
DNU (Note 2)
NC (Note 3)
F7
RFU (Note 4)
BYTE#
G7
DQ15
Q15/A-1
BGA Package
Notes:
1. Voltage cannot exceed VIO + 0.4V on WP# input for GL-S.
2. DNU = Do Not Use, must remain floating.
3. NC = Not Connected, should remain floating, okay to be pulled low or high.
4. RFU = Reserved for Future use, not connected internally on GL-S, okay to pull high.
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A pplication
8.
Note
References
 Spansion GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family Data Sheet, Publication Number
S29GL_128S_01GS_00
 Macronix MX29GL512E H/L Data Sheet, P/N PM1524
 Macronix MX29GL256E Data Sheet, P/N PM1499
 Macronix MX29GL128E Data Sheet, P/N PM1500
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9. Revision History
Section
Description
Revision 01 (October 6, 2011)
Initial release
October 6, 2011
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A pplication
Note
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any
damages of any kind arising out of the use of the information in this document.
Copyright © 2011 Spansion Inc. All rights reserved. Spansion®, the Spansion logo, MirrorBit®, MirrorBit® Eclipse™, ORNAND™, EcoRAM™ and
combinations thereof, are trademarks and registered trademarks of Spansion LLC in the United States and other countries. Other names used
are for informational purposes only and may be trademarks of their respective owners.
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