datasheet for PUMA68S16000XB by Apta Group

datasheet for PUMA68S16000XB by Apta Group
Issue 5.3 November 2002
Description
The PUMA68 range of devices provide a high
density surface mount industry standard memory
solution which may accommodate various memory
technologies including SRAM, EEPROM and
Flash. The devices are designed to offer a defined
upgrade path and may be user configured as 8, 16
or 32 bits wide.
The PUMA68S16000X is a 512Kx32 SRAM module
housed in a 68 Jleaded package which complies with
the JEDEC 68 PLCC standard. Access times of 20
or 25ns are available. The 5V low voltage device is
available to commercial and industrial temperature
grade.
Features
ï Access times of 20/25 ns.
ï 5V + 10%.
ï Commercial and Industrial temperature grades
ï JEDEC standard 68 J Lead footprint.
ï Industry standard pinout.
ï May be organised as 512K x 32, 1M x 16, 2M X 8
ï Operating Power
(32 Bit)
4.18W max)
ï Low power standby.
(TTL) 1.32W (max)
(CMOS) 220mW (max)
ï Completely Static Operation.
Package Details
PUMA 68 - Plastic 68 ëJí Leaded Package
Max. Dimensions (mm) - 25.27 x 25.27 x 5.08
Block Diagram
A0~A18
/OE
/WE
512K x 8
SRAM
512K x 8
SRAM
512K x 8
512K x 8
SRAM
SRAM
/CS1
/CS2
/CS3
/CS4
D0~7
D8~15
D16~23
D24~31
Pin Definition
See page 2.
Pin Functions
Description
Signal
Address Input
Data Input/Output
Chip Select
Write Enable
Output Enable
No Connect
Power
Ground
A0~A18
D0~D31
/CS1~4
/WE
/OE
NC
VCC
VSS
Elm Road, West Chirton Industrial Estate, North Shields, NE29 8SE, England.
TEL +44 (0191) 2930500. FAX +44 (0191) 2590997 E-mail: [email protected]
512 K x 32 Static RAM
PUMA 68S16000X - 020/025
Pin Definition - PUMA68SV16000X
PAGE 2
Pin
Signal
Pin
Signal
1
VCC
35
VCC
2
NC
36
A13
3
/CS1
37
A12
4
/CS2
38
A11
5
/CS3
39
A10
6
/CS4
40
A9
7
A17
41
A8
8
A18
42
A7
9
D16
43
D0
10
D17
44
D1
11
D18
45
D2
12
D19
46
D3
13
VSS
47
VSS
14
D20
48
D4
15
D21
49
D5
16
D22
50
D6
17
D23
51
D7
18
VCC
52
VCC
19
D24
53
D8
20
D25
54
D9
21
D26
55
D10
22
D27
56
D11
23
VSS
57
VSS
24
D28
58
D12
25
D29
59
D13
26
D30
60
D14
27
D31
61
D15
28
A6
62
A14
29
A5
63
A15
30
A4
64
A16
31
A3
65
/WE
32
A2
66
/OE
33
A1
67
NC
34
A0
68
NC
Issue 5.2 April 2001
Absolute Maximum Ratings(1)
Symbol
Voltage on any pin relative to VSS
VT
Power Dissipation
PT
Storage Temperature
TSTG
Min
-0.3
to
Max
Unit
+6
V
4.0
-55
W
to
O
+125
C
Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Input High Voltage
VIH
2.2
-
VCC+0.5
V
Input Low Voltage
VIL
-0.3
-
0.8
V
Operating Temperature
TA
0
-
70
TAI
-40
-
85
(1)
O
C
O
C
(I Suffix)
Notes : (1) Pulse Width : -2.0V for less than 10ns.
DC Electrical Characteristics
(VCC=5V+10%, TA=-40OC to +85OC)
Parameter
Symbol Test Condition
Min
Typ
Max
Unit
Input Leakage Current
ILI
VIN=0V to VCC
-8
-
8
µA
Output Leakage Current
ILO
VI/O=0V to VCC
-8
-
8
µA
32 Bit
ICC32
/CS =VIL, II/O=0mA,f=fmax
-
-
760
mA
16 Bit
ICC16
As Above.
-
-
490
mA
8 Bit
ICC8
As Above.
-
-
370
mA
TTL
ISB
/CS =VIH ,Min Cycle
-
-
240
mA
CMOS
ISB1
/CS>VCC-0.2V, 0.2V
>VIN>VCC-0.2V, f=0
-
-
40
mA
Output Voltage Low
VOL
IOL=8.0mA, VCC=Min
-
-
0.4
V
Output Voltage High
VOH
IOH=-4.0mA, VCC=Min
2.4
-
-
V
(2)
Average Supply Current
Standby Supply Current
Notes
PAGE 3
(1)
(1)
(1) /CS1~4 inputs operate simultaneously for 32 bit mode, in pairs for 16 bit mode and singly for 8 bit mode.
(2) At f=fMAX address and data inputs are cycling at max frequency.
Issue 5.2 April 2001
DC Operating Conditions
Parameter
Capacitance
(VCC = 5V, TA = 25OC, F=1MHz.)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Input Capacitance, Address, /OE, /WE
CIN1
VIN=0V
-
-
30
pF
Output Capacitance, 8 bit mode (worst case)
CI/O
VI/O=0V
-
-
34
pF
Note : These Parameters are calculated not measured.
Test Conditions
Output Load
I/O Pin
ï Input pulse levels : 0V to 3.0V
ï
ï
ï
ï
ï
Input rise and fall times : 3ns
Input and Output timing reference levels : 1.5V
Output Load : See Load Diagram.
VCC = 5V+10%
PUMA module tested in 32 bit mode.
166Ω
1.76V
30pF
Operation Truth Table
/CS1
/CS2
/CS3
/CS4
/OE
/WE
Supply Current
Mode
L
H
H
H
X
L
ICC8
Write D0~D7
H
L
H
H
X
L
ICC8
Write D8~D15
H
H
L
H
X
L
ICC8
Write D16~D23
H
H
H
L
X
L
ICC8
Write D24~D31
L
L
H
H
X
L
ICC16
Write D0~D15
H
H
L
L
X
L
ICC16
Write D16~D31
L
L
L
L
X
L
ICC32
Write D0~D31
L
H
H
H
L
H
ICC8
Read D0~D7
H
L
H
H
L
H
ICC8
Read D8~D15
H
H
L
H
L
H
ICC8
Read D16~D23
H
H
H
L
L
H
ICC8
Read D24~D31
L
L
H
H
L
H
ICC16
Read D0~D15
H
H
L
L
L
H
ICC16
Read D16~D31
L
L
L
L
L
H
ICC32
Read D0~D31
X
X
X
X
H
H
H
H
H
H
X
X
ICC32 /ICC16/ICC8 D0~D31 High-Z
ISB, ISB1
D0~D31 Standby
Notes : H=VIH : L=VIL : X=VIH or VIL
PAGE 4
Issue 5.2 April 2001
20
Parameter
25
Symbol Min Max Min Max Units
Read Cycle Time
tRC
20
-
25
-
ns
Address Access Time
tAA
-
20
-
25
ns
Chip Select Access Time
tACS
-
20
-
25
ns
Output Enable to Output Valid
tOE
-
9
-
12
ns
Output Hold From Address Change
tOH
3
-
3
-
ns
Chip Selection to Output in Low Z
tCLZ
3
-
3
-
ns
Output Enable to Output in Low Z
tOLZ
0
-
0
-
ns
Chip Deselection to Output in High Z
tCHZ
0
9
0
10
ns
Output Disable to Output in High Z
tOHZ
0
9
0
10
ns
Write Cycle
20
Parameter
PAGE 5
25
Symbol
Min
Max
Min
Max
Units
Write Cycle Time
tWC
20
-
25
-
ns
Chip Selection to End of Write
tCW
15
-
20
-
ns
Address Valid to End of Write
tAW
15
-
20
-
ns
Address Setup Time
tAS
0
-
0
-
ns
Write Pulse Width (/OE High)
tWP1
13
-
15
-
ns
Write Pulse Width (/OE Low)
tWP2
14
-
15
-
ns
Write Recovery Time
tWR
0
-
0
-
ns
Write to Output in High Z
tWHZ
0
9
0
10
ns
Data to Write Time Overlap
tDW
9
-
10
-
ns
Data Hold time from Write Time
tDH
0
-
0
-
ns
Output Active from End of Write
tOW
3
-
3
-
ns
Issue 5.2 April 2001
AC Operating Conditions
Read Cycle
Timing Waveforms
Read Cycle 1
(Address Controlled, /CS=/OE=VIL, /WE=VIH)
tRC
Address
tOH
Data Out
tAA
Previous Data Valid
Data Valid
Read Cycle 2
(/WE = VIH)
tRC
Address
tAA
tACS
tCHZ(3,4,5)
/CS
tOHZ
tOE
/OE
tOH
tOLZ
tCLZ(4,5)
Data Out
Valid Data
NOTES(READ CYCLE)
1. /WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or
VOL levels.
4. At any given temperature and voltage condition, tCHZ(Max.) is less than tCLZ(Min.) both for a given device and from device to
device.
5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with /CS=VIL.
7. Address valid prior to coincident with /CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
9. /CS=/CS1~4
PAGE 6
Issue 5.2 April 2001
Write Cycle 1
(/OE = Clock)
tWC
Address
tAW
tWR(5)
/OE
tCW(3)
/CS
tAS(4)
tWP(2)
/WE
tDW
tDH
High Z
Valid Data
Data In
tOHZ(6)
High Z(8)
Data Out
NOTES(WRITE CYCLE)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low /CS and /WE. A write begins at the latest transition /CS going low and /WE going low ;
A write ends at the earliest transition /CS going high or /WE going high. tWP is measured from the beginning of write to the end of
write.
3. tCW is measured from the later of /CS going low to end of write.
4. tAS is measured from the address valid to the beginning of write.
5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high.
6. If OE, /CS and /WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
of the output must not be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If /CS goes low simultaneously with /WE going or after /WE going low, the outputs remain high impedance state.
9. Dout is the read data of the new address.
10.When /CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
applied.
11 /CS=/CS1~4
PAGE 7
Issue 5.2 April 2001
Write Cycle 2
(/OE = Low Fixed)
tWC
Address
tAW
tWR(5)
tCW(3)
/CS
tAS(4)
tWP(2)
/WE
tDH
tDW
High Z
Data In
Valid Data
tOW
tWHZ(6)
High Z(8)
(10)
(9)
Data Out
NOTES(WRITE CYCLE)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low /CS and /WE. A write begins at the latest transition /CS going low and /WE going low ;
A write ends at the earliest transition /CS going high or /WE going high. tWP is measured from the beginning of write to the end of
write.
3. tCW is measured from the later of /CS going low to end of write.
4. tAS is measured from the address valid to the beginning of write.
5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high.
6. If OE, /CS and /WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
of the output must not be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If /CS goes low simultaneously with /WE going or after /WE going low, the outputs remain high impedance state.
9. Dout is the read data of the new address.
10.When /CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
applied.
11./CS=/CS1~4
PAGE 8
Issue 5.2 April 2001
Write Cycle 3
(/CS = Controlled)
tWC
Address
tAW
tWR(5)
tCW(3)
/CS
tAS(4)
tWP(2)
/WE
tDW
tDH
High Z
High Z
Valid Data
Data In
tLZ
High Z
tWHZ(6)
High Z(8)
Data Out
NOTES(WRITE CYCLE)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low /CS and /WE. A write begins at the latest transition /CS going low and /WE going low ;
A write ends at the earliest transition /CS going high or /WE going high. t WP is measured from the beginning of write to the end of
write.
3. tCW is measured from the later of /CS going low to end of write.
4. tAS is measured from the address valid to the beginning of write.
5. tWR is measured from the end of write to the address change. t WR applied in case a write ends as /CS or /WE going high.
6. If /OE, /CS and /WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
of the output must not be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If /CS goes low simultaneously with /WE going or after /WE going low, the outputs remain high impedance state.
9. Dout is the read data of the new address.
10.When /CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
applied.
11./CS=/CS1~4
Note: /CS = /CS1~4
PAGE 9
Issue 5.2 April 2001
Package Details
PUMA 68 Pin JEDEC Surface Mount PLCC
25.27 (0.995)
25.02 (0.985)
Pin 1
Pin 68
XXXXXX-X
5.08
(0. 200)
max
0.46
(0. 018)
1.27
(0. 050)
0.90
(0. 035)
typ
23.11 (0.910)
24.13 (0.950)
Notes:
1. All dimensions in mm (inches).
PAGE 10
Issue 5.2 April 2001
Ordering Information
Speed
20 = 20ns
25 = 25ns
Temp. Range/Screening Blank = Commercial
I = Industrial
Pinout Configuration
XB = Chip Scale BGA Based
Design,
Industry Standard
Pinout
Memory Organisation
Technology
Package
16000 = 512K x 32 configurable
as 1M x 16 and 2M x 8
S = SRAM
PUMA 68 = 68 pin ëJí Leaded PLCC
Note :
Although this data is believed to be accurate the information contained herein is not intended to and does not create
any warranty of merchantibility or fitness for a particular purpose.
Our products are subject to a constant process of development. Data may be changed without notice.
Products are not authorised for use as critical components in life support devices without the express written
approval of a company director.
PAGE 11
Issue 5.2 April 2001
Ordering Information
PUMA 68S16000XBI - 20
All devices inspected to ANSI/J-STD-001B Class 2 standard
Moisture Sensitivity
Devices are moisture sensitive.
Shelf Life in Sealed Bag 12 months at <40OC and <90% relative humidity (RH).
After this bag has been opened, devices that will be subjected to infrared reflow, vapour phase reflow, or
equivalent processing (peak package body temp 220OC) must be :
A : Mounted within 72 Hours at factory conditions of <30OC/60% RH
OR
B : Stored at <20% RH
If these conditions are not met or indicator card is >20% when read at 23OC +/-5% devices require baking
as specified below.
If baking is required, devices may be baked for :A : 24 hours at 125OC +/-5% for high temperature device containers
OR
B : 192 hours at 40OC +5OC/-0OC and <5% RH for low temperature device containers.
Packaging Standard
Devices packaged in dry nitrogen, JED-STD-020.
Packaged in trays as standard.
Tape and reel available for shipment quantities exceeding 200pcs upon request.
Soldering Recomendations
IR/Convection -
Ramp Rate
Temp. exceeding 183OC
Peak Temperature
Time within 5OC of peak
Ramp down
6OC/sec max.
150 secs. max.
225OC
20 secs max.
6OC/sec max.
Vapour Phase -
Ramp up rate
Peak Temperature
Time within 5OC of peak
Ramp down
6OC/sec max.
215 - 219OC
60 secs max.
6OC/sec max.
The above conditions must not be exceeded
Note : The above recommendations are based on standard industry practice. Failure to comply with
the above recommendations invalidates product warranty.
PAGE 12
Issue 5.2 April 2001
Customer Guidelines
Visual Inspection Standard
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