BCR16CM-12LB Datasheet

BCR16CM-12LB Datasheet
Preliminary Datasheet
BCR16CM-12LB
R07DS1032EJ0400
(Previous: REJ03G0457-0300)
Rev.4.00
Feb 25, 2013
600V - 16A - Triac
Medium Power Use
Features
 Non-Insulated Type
 Planar Passivation Type
 IT (RMS) : 16 A
 VDRM : 600 V
 IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
RENESAS Package code: PRSS0004AA-A
A
(Package name: TO-220)
4
4
2, 4
3
1.
2.
3.
4.
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
1
1
2
12
3
3
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control,
copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Parameter
Voltage class
Symbol
Unit
12
600
720
VDRM
VDSM
V
V
Symbol
Ratings
Unit
RMS on-state current
IT (RMS)
16
A
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 125C
Surge on-state current
ITSM
170
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t
121
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
5.0
0.5
10
2
– 40 to +150
– 40 to +150
2.1
W
W
V
A
C
C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
R07DS1032EJ0400 Rev.4.00
Feb 25, 2013
Conditions
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Page 1 of 8
BCR16CM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
Test conditions
Tj = 150C, VDRM applied
Tc = 25C, ITM = 25 A,
Instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger currentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
30Note6
30Note6
30Note6
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
Rth (j-c)
0.2/0.1
—
—
—
—
1.4
V
C/W
Tj = 125C/150C, VD = 1/2 VDRM
Junction to caseNote3 Note4
(dv/dt)c
10/1
—
—
V/s
Tj = 125C/150C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note5
commutating voltage
Notes: 1.
2.
3.
4.
5.
6.
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (IGT  20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8.0 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS1032EJ0400 Rev.4.00
Feb 25, 2013
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 8
BCR16CM-12LB
Preliminary
Performance Curves
103
7
5
3
2
Tj = 150°C
101
7
5
3
2
Tj = 25°C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
160
140
120
100
80
60
40
20
0
100
4.0
2 3 4 5 7 101
2 3 4 5 7 102
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
101
7
5
3 VGT = 1.5V
2
PG(AV) = 0.5W
PGM = 5W
IGM = 2A
100
7
5
3
2
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Conduction Time (Cycles at 60Hz)
10–1
7 IFGT I, IRGT I, IRGT III
VGD = 0.1V
5
1
2
10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
180
On-State Voltage (V)
3
2 VGM = 10V
Gate Voltage (V)
Surge On-State Current (A)
200
102
7
5
3
2
100
Rated Surge On-State Current
103
7
5
4
3
2
102
7
5
4
3
2
Typical Example
IRGT III
IFGT I, IRGT I
101
–60 –40 –20 0 20 40 60 80 100 120140160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140160
Junction Temperature (°C)
R07DS1032EJ0400 Rev.4.00
Feb 25, 2013
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102 2 3 5 7 103
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
Page 3 of 8
BCR16CM-12LB
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
35
140
30 360° Conduction
Resistive,
25 inductive loads
20
15
10
5
0
2
4
6
120 Curves apply regardless
of conduction angle
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0 2 4 6 8 10 12 14 16 18 20
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
Ambient Temperature (°C)
8 10 12 14 16 18 20
All fins are black painted
aluminum and greased
140
120 × 120 × t2.3
120
100 × 100 × t2.3
100
60 × 60 × t2.3
80
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0 2 4 6 8 10 12 14 16 18 20
160
Ambient Temperature (°C)
0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
40
140
120
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
100
80
60
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
5
3 Typical Example
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100120140160
Junction Temperature (°C)
R07DS1032EJ0400 Rev.4.00
Feb 25, 2013
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Page 4 of 8
BCR16CM-12LB
Preliminary
Breakover Voltage vs.
Junction Temperature
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3 T +, G+
2
2
Typical Example
T2–, G–
100
0
40
80
–40
120
160
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
103
7
5
3
2
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
Tj = 125°C
140
120
100
III Quadrant
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Junction Temperature (°C)
160
Typical Example
Tj = 150°C
140
120
100
III Quadrant
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
102
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7 Minimum
5 Characteristics
Value
III Quadrant
3
2
100
7
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
3
5 7 101
2 3
5 7 102
2 3
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1032EJ0400 Rev.4.00
Feb 25, 2013
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Latching Current (mA)
Latching Current vs.
Junction Temperature
102
7 Typical Example
5 Tj = 150°C
IT = 4A
3 τ = 500μs
2 VD = 200V
f = 3Hz
101
7
5
3
2 I Quadrant
100
7
3
5 7 101
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
III Quadrant
Minimum
Characteristics
Value
2 3
5 7 102
2 3
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 8
BCR16CM-12LB
Preliminary
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
5
4
3
2
Typical Example
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
Recommended Circuit Values Around The Triac
6Ω
Load
C1
A
6V
V
Test Procedure I
R1
A
6V
330Ω
V
330Ω
Test Procedure II
C0
R0
C1 = 0.1 to 0.47μF C0 = 0.1μF
R1 = 47 to 100Ω
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS1032EJ0400 Rev.4.00
Feb 25, 2013
Page 6 of 8
BCR16CM-12LB
Preliminary
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AG-A
Previous Code
TO-220ABS
MASS[Typ.]
2.1g
Unit: mm
4.5 ± 0.2
2.8 ± 0.1
Package Name
TO-220AB
9.9 ± 0.2
+ 0.10
φ3.6 ± 0.2
13.08 ± 0.20
(3.00)
9.2 ± 0.2
15.7 ± 0.2
1.30 – 0.05
1.62 Max
0.80 ± 0.10
2.6 Max
2.54
2.54
+ 0.10
0.50 – 0.05
10.0 ± 0.2
Package Name
TO-220
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AA-A
Previous Code
⎯
MASS[Typ.]
2.0g
10.5Max
Unit: mm
4.5
φ3.6
3.8Max
12.5Min
16Max
7.0
3.2
1.3
1.0
0.8
0.5
2.54
2.6
4.5Max
2.54
2
R07DS1032EJ0400 Rev.4.00
Feb 25, 2013
Page 7 of 8
BCR16CM-12LB
Preliminary
Ordering Information
Orderable Part Number
BCR16CM-12LB#BB0
BCR16CM-12LBA8#BB0
Note:
Packing
Tube
Tube
Quantity
50 pcs.
50 pcs.
Remark
Straight type
A8 Lead form
Please confirm the specification about the shipping in detail.
R07DS1032EJ0400 Rev.4.00
Feb 25, 2013
Page 8 of 8
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