DATA SHEET Audio

DATA SHEET Audio
DATA SHEET
Audio
Order code
82-0484
Manufacturer code
TBA820M
Description
TBA820M AUDIO AMPLIFIER (RC)
Audio
The enclosed information is believed to be correct, Information may change ‘without notice’ due to
product improvement. Users should ensure that the product is suitable for their use. E. & O. E.
Sales: 01206 751166
[email protected]
Technical: 01206 835555
[email protected]
Page 1 of
7
Revision A
12/12/2006
Fax: 01206 751188
www.rapidelectronics.co.uk
TBA820M
1.2W AUDIO AMPLIFIER
DESCRIPTION
The TBA820M is a monolithic integrated audio
amplifier in a 8 lead dual in-line plastic package. It
is intended for use as low frequency class B power
amplifier with wide range of supply voltage: 3 to
16V, in portable radios, cassette recorders and
players etc. Main features are: minimum working
supply voltage of 3V, low quiescent current, low
number of external components, good ripple rejection, no cross-over distortion, low power dissipation.
Output power: Po = 2W at 12V/8Ω, 1.6W at 9V/4Ω
and 1.2W at 9V/8Ω.
Minidip
ORDERING NUMBER: TBA820M
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Vs
Supply voltage
Parameter
16
V
Io
Output peak current
1.5
A
Ptot
Power dissipation at Tamb = 50°C
1
W
Tstg, Tj
Storage and junction temperature
-40 to 150
°C
TEST AND APPLICATION CIRCUITS
Figure 1. Circuit diagram with load connectedto the
supply voltage
Figure 2. Circuit diagram with load connected
to ground
* Capacitor C6 must be used when high ripple rejection is requested.
June 1988
1/6
TBA820M
PIN CONNECTION (top view)
SCHEMATIC DIAGRAM
THERMAL DATA
Symbol
Rth-j-amb
2/6
Parameter
Thermal resistance junction-ambient
max
Value
Unit
100
°C/W
TBA820M
ELECTRICAL CHARACTERISTICS (Refer to the test circuits Vs = 9V, Tamb = 25 °C unless otherwise
specified)
Symbol
Parameter
Test conditions
Min.
Vs
Supply voltage
3
Vo
Quiescent output voltage (pin 5)
4
Id
Quiescent drain current
Ib
Bias current (pin 3)
Po
Output power
d = 10%
Rf = 120Ω
Vs = 12V
Vs = 9V
Vs = 9V
Vs = 6V
Vs = 3.5V
Ri
Input resistance (pin 3)
f = 1 kHz
B
Frequency response (-3 dB)
RL = 8Ω
C5 = 1000 µF
Rf = 120Ω
d
Distortion
Typ.
Max.
Unit
16
V
4.5
5
V
4
12
mA
0.1
µA
2
1.6
1.2
0.75
0.25
W
W
W
W
W
5
MΩ
f = 1 kHz
R L = 8Ω
R L = 4Ω
R L = 8Ω
R L = 4Ω
R L = 4Ω
0.9
C B = 680 pF
25 to 7,000
C B = 220 pF
25 to 20,000
Hz
Po = 500 mW
RL = 8Ω
f = 1 kHz
R f = 33Ω
0.8
R f = 120Ω
0.4
%
Gv
Voltage gain (open loop)
f = 1 kHz
R L = 8Ω
75
Gv
Voltage gain (closed loop)
RL = 8Ω
R f = 33Ω
45
f = 1 kHz
R f = 120Ω
34
dB
dB
eN
Input noise voltage (*)
3
µV
iN
Input noise current (*)
0.4
nA
S+N
N
Signal to noise ratio (*)
SVR
Supply voltage rejection
(test circuit of fig. 2)
Po = 1.2W
RL = 8Ω
Gv = 34 dB
RL = 8Ω
f(ripple) = 100 Hz
C6 = 47 µF
Rf = 120Ω
R1 = 10KΩ
80
R1 = 50 kΩ
70
dB
42
dB
(*) B = 22 Hz to 22 KHz
3/6
TBA820M
Figure 3. Output power vs.
supply voltage
Figure 4. Harmonic distortion
vs. output power
Figure 5. Power dissipation
and efficiency vs. output
power
Figure 6. Maximum power
d i ss i p ati on (s i ne wa ve
operation)
Figure 7. Suggested value of
CB vs. Rf
Figur e 8. Frequ ency response
Figure 9. Harmonic distortion
vs. frequency
Figure 10. Supply voltage
rejection (Fig. 2 circuit)
Figure 11. Quiescent current
vs. supply voltage
4/6
TBA820M
MINIDIP PACKAGE MECHANICAL DATA
mm
DIM.
MIN.
A
TYP.
inch
MAX.
MIN.
3.32
TYP.
MAX.
0.131
a1
0.51
0.020
B
1.15
1.65
0.045
0.065
b
0.356
0.55
0.014
0.022
b1
0.204
0.304
0.008
0.012
D
E
10.92
7.95
9.75
0.430
0.313
0.384
e
2.54
0.100
e3
7.62
0.300
e4
7.62
0.300
F
6.6
0.260
I
5.08
0.200
L
Z
3.18
3.81
1.52
0.125
0.150
0.060
5/6
TBA820M
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.
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