1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash S29GL01GP S29GL512P

1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash S29GL01GP S29GL512P
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash
with 90 nm MirrorBit Process Technology
General Description
The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices
offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that
allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than
standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density,
better performance and lower power consumption.
Distinctive Characteristics
 Single 3V read/program/erase (2.7-3.6 V)
 20-year data retention typical
 Enhanced VersatileI/O™ control
– All input levels (address, control, and DQ input levels) and
outputs are determined by voltage on VIO input. VIO range is 1.65
to VCC
 Offered Packages
– 56-pin TSOP
– 64-ball Fortified BGA
 90 nm MirrorBit process technology
 8-word/16-byte page read buffer
 32-word/64-byte write buffer reduces overall programming time for
multiple-word updates
 Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number
– Can be programmed and locked at the factory or by the
customer
 Uniform 64 Kword/128 Kbyte Sector Architecture
– S29GL01GP: One thousand twenty-four sectors
– S29GL512P: Five hundred twelve sectors
– S29GL256P: Two hundred fifty-six sectors
– S29GL128P: One hundred twenty-eight sectors
 Suspend and Resume commands for Program and Erase
operations
 Write operation status bits indicate program and erase operation
completion
 Unlock Bypass Program command to reduce programming time
 Support for CFI (Common Flash Interface)
 Persistent and Password methods of Advanced Sector Protection
 WP#/ACC input
– Accelerates programming time (when VHH is applied) for greater
throughput during system production
– Protects first or last sector regardless of sector protection
settings
 Hardware reset input (RESET#) resets device
 Ready/Busy# output (RY/BY#) detects program or erase cycle
completion
 100,000 erase cycles per sector typical
Cypress Semiconductor Corporation
Document Number: 002-00886 Rev. *A
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised December 16, 2015
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Performance Characteristics
Maximum Read Access Times (ns)
Density
128 & 256 Mb
512 Mb
1 Gb
Voltage Range (1)
Random Access
Time (tACC)
Regulated VCC
90
Full VCC
100/110
Page Access Time
(tPACC)
CE# Access Time
(tCE)
25
100/110
90
VersatileIO VIO
110
110
Regulated VCC
100
100
Full VCC
110
VersatileIO VIO
120
Regulated VCC
110
Full VCC
120
VersatileIO VIO
130
OE# Access Time
(tOE)
25
110
25
25
120
110
25
120
25
130
Notes
1. Access times are dependent on VCC and VIO operating ranges.
See Ordering Information page for further details.
Regulated VCC: VCC = 3.0–3.6 V.
Full VCC: VCC = VIO = 2.7–3.6 V.
VersatileIO VIO: VIO = 1.65–VCC, VCC = 2.7–3.6 V.
2. Contact a sales representative for availability.
Current Consumption (typical values)
Random Access Read (f = 5 MHz)
30 mA
8-Word Page Read (f = 10 MHz)
1 mA
Program/Erase
50 mA
Standby
1 µA
Program & Erase Times (typical values)
Single Word Programming
60 µs
Effective Write Buffer Programming (VCC) Per Word
15 µs
Effective Write Buffer Programming (VHH) Per Word
13.5 µs
Sector Erase Time (64 Kword Sector)
Document Number: 002-00886 Rev. *A
0.5 s
Page 2 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Contents
1.
Ordering Information ................................................... 4
11.7 AC Characteristics ........................................................ 52
2.
Input/Output Descriptions & Logic Symbol .............. 6
3.
Block Diagram.............................................................. 7
4.
4.1
4.2
4.3
4.4
Physical Dimensions/Connection Diagrams............. 7
Related Documents ....................................................... 7
Special Handling Instructions for BGA Package............ 7
LAA064—64 ball Fortified Ball Grid Array, 11 x 13 mm. 9
TS056—56-Pin Standard Thin Small Outline Package
(TSOP)......................................................................... 10
12. Appendix ..................................................................... 63
12.1 Command Definitions.................................................... 63
12.2 Common Flash Memory Interface................................. 69
5.
5.1
5.2
5.3
5.4
Additional Resources ................................................
Application Notes .........................................................
Specification Bulletins ..................................................
Hardware and Software Support..................................
Contacting Spansion....................................................
6.
6.1
Product Overview ...................................................... 13
Memory Map ................................................................ 13
7.
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
Device Operations .....................................................
Device Operation Table ...............................................
Word/Byte Configuration..............................................
VersatileIOTM (VIO) Control ..........................................
Read ............................................................................
Page Read Mode .........................................................
Autoselect ....................................................................
Program/Erase Operations ..........................................
Write Operation Status.................................................
Writing Commands/Command Sequences..................
14
14
15
15
15
15
16
19
31
35
8.
8.1
8.2
8.3
8.4
8.5
8.6
Advanced Sector Protection/Unprotection .............
Lock Register ...............................................................
Persistent Protection Bits.............................................
Persistent Protection Bit Lock Bit.................................
Password Protection Method .......................................
Advanced Sector Protection Software Examples ........
Hardware Data Protection Methods.............................
37
38
38
40
40
43
43
9.
9.1
9.2
9.3
9.4
Power Conservation Modes......................................
Standby Mode..............................................................
Automatic Sleep Mode.................................................
Hardware RESET# Input Operation.............................
Output Disable (OE#)...................................................
44
44
44
44
44
10.
10.1
10.2
10.3
Secured Silicon Sector Flash Memory Region .......
Factory Locked Secured Silicon Sector .......................
Customer Lockable Secured Silicon Sector.................
Secured Silicon Sector Entry/Exit Command
Sequences ...................................................................
45
45
46
Electrical Specifications............................................
Absolute Maximum Ratings .........................................
Operating Ranges........................................................
Test Conditions ............................................................
Key to Switching Waveforms .......................................
Switching Waveforms ..................................................
DC Characteristics .......................................................
48
48
49
49
49
50
51
11.
11.1
11.2
11.3
11.4
11.5
11.6
Document Number: 002-00886 Rev. *A
13.
Advance Information on S29GL-S Eclipse 65 nm
Mirror Bit Power-On and Warm Reset Timing .......... 73
14.
Revision History.......................................................... 75
12
12
12
12
12
46
Page 3 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
1.
Ordering Information
The ordering part number is formed by a valid combination of the following:
S29GL01GP
12
F
F
I
01
0
PACKING TYPE
0 = Tray (standard (Note 5))
2 = 7” Tape and Reel
3 = 13” Tape and Reel
MODEL NUMBER (VIO range, protection when WP# =VIL)
01 = VIO = VCC = 2.7 to 3.6 V, highest address sector protected
02 = VIO = VCC = 2.7 to 3.6 V, lowest address sector protected
V1 = VIO = 1.65 to VCC, VCC = 2.7 to 3.6 V, highest address sector protected
V2 = VIO = 1.65 to VCC, VCC = 2.7 to 3.6 V, lowest address sector protected
R1 = VIO = VCC = 3.0 to 3.6 V, highest address sector protected
R2 = VIO = VCC = 3.0 to 3.6 V, lowest address sector protected
TEMPERATURE RANGE
I = Industrial (–40°C to +85°C)
C = Commercial (0°C to +85°C)
PACKAGE MATERIALS SET
A = Pb (Note 1)
F = Pb-free
PACKAGE TYPE
T = 56-pin Thin Small Outline Package (TSOP) Standard Pinout(TSO56)
F = 64-ball Fortified Ball Grid Array, 1.0 mm pitch package (LAA064)
SPEED OPTION
90 = 90 ns
10 = 100 ns
11 = 110 ns
12 = 120 ns
13 = 130 ns
DEVICE NUMBER/DESCRIPTION
S29GL01GP, S29GL512P, S29GL256P, S29GL128P
3.0 Volt-only, 1024, 512, 256 and 128 Megabit Page-Mode Flash Memory, manufactured on 90 nm MirrorBit® process technology
Document Number: 002-00886 Rev. *A
Page 4 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Recommended Combinations
Recommended Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to
confirm availability of specific recommended combinations and to check on newly released combinations.
S29GL-P Valid Combinations
Base Part
Number
Speed
Package (2)(3)
11
12
S29GL01GP
TA (1), TF
13
11
12
10
S29GL512P
TA (1), TF
10
90
10, 11
I
I
I
I
I, C
TA (1), TF
11
90
10, 11
R1, R2
I, C
FA (1), FF
12
S29GL128P,
S29GL256P
I, C
I, C
12
11
Model Number
I, C
FA (1), FF
13
11
Temperature (4)
I
I, C
FA (1), FF
11
I
01, 02
Packing Type (5)
0, 3
V1, V2
R1, R2
01, 02
0, 2, 3
V1, V2
R1, R2
01, 02
0, 3
V1, V2
R1, R2
01, 02
0, 2, 3
V1, V2
R1, R2
01, 02
0, 3
V1, V2
R1, R2
01, 02
0, 2, 3
V1, V2
Notes
1. Contact a local sales representative for availability.
2. TSOP package marking omits packing type designator from ordering part number.
3. BGA package marking omits leading “S29” and packing type designator from ordering part number.
4. Operating Temperature range: I = Industrial (–40°C to +85°C)
C = Commercial (0°C to +85°C)
5. Type 0 is standard. Specify other options as required.
Document Number: 002-00886 Rev. *A
Page 5 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
2. Input/Output Descriptions & Logic Symbol
Table identifies the input and output package connections provided on the device.
Input/Output Descriptions
Symbol
Type
A25–A0
Input
DQ14–DQ0
I/O
DQ15/A-1
I/O
Description
Address lines for GL01GP
A24–A0 for GL512P
A23–A0 for GL256P,
A22–A0 for GL128P.
Data input/output.
DQ15: Data input/output in word mode.
A-1: LSB address input in byte mode.
CE#
Input
Chip Enable.
OE#
Input
Output Enable.
WE#
Input
VCC
Supply
Write Enable.
Device Power Supply.
VIO
Supply
Versatile IO Input.
VSS
Supply
Ground.
NC
No Connect
RY/BY#
Output
BYTE#
Input
Selects data bus width. At VIL, the device is in byte configuration and data I/O pins DQ0DQ7 are active and DQ15/A-1 becomes the LSB address input. At VIH, the device is in
word configuration and data I/O pins DQ0-DQ15 are active.
RESET#
Input
Hardware Reset. Low = device resets and returns to reading array data.
WP#/ACC
Input
Write Protect/Acceleration Input. At VIL, disables program and erase functions in the
outermost sectors. At VHH, accelerates programming; automatically places device in
unlock bypass mode. Should be at VIH for all other conditions. WP# has an internal pullup; when unconnected, WP# is at VIH.
Not connected internally.
Ready/Busy. Indicates whether an Embedded Algorithm is in progress or complete. At
VIL, the device is actively erasing or programming. At High Z, the device is in ready.
Document Number: 002-00886 Rev. *A
Page 6 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
3. Block Diagram
Figure 3.1 S29GL-P Block Diagram
DQ15–DQ0
RY/BY#
VCC
Sector Switches
VSS
VIO
Erase Voltage
Generator
RESET#
WE#
WP#/ACC
BYTE#
Input/Output
Buffers
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
Timer
AMax**–A0 (A-1)
Address Latch
STB
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
** AMax GL01GP=A25, AMax GL512P = A24, AMax GL256P = A23, AMax GL128P = A22
4. Physical Dimensions/Connection Diagrams
This section shows the I/O designations and package specifications for the S29GL-P family.
4.1
Related Documents
The following documents contain information relating to the S29GL-P devices. Click on the title or go to www.spansion.com
download the PDF file, or request a copy from your sales office.
 Considerations for X-ray Inspection of Surface-Mounted Flash Integrated Circuits
4.2
Special Handling Instructions for BGA Package
Special handling is required for Flash Memory products in BGA packages.
Document Number: 002-00886 Rev. *A
Page 7 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Flash memory devices in BGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data
integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time.
Figure 4.1 64-ball Fortified Ball Grid Array
Top View, Balls Facing Down
NC on S29GL128P
NC on S29GL256P
NC on S29GL512P
A8
B8
C8
D8
E8
F8
G8
H8
NC
A22
A23
VIO
VSS
A24
A25
NC
A7
B7
C7
D7
E7
F7
G7
H7
A13
A12
A14
A15
A16
BYTE#
DQ15/A-1
VSS
A6
B6
C6
D6
E6
F6
G6
H6
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A5
B5
C5
D5
E5
F5
G5
H5
WE#
RESET#
A21
A19
DQ5
DQ12
VCC
DQ4
A4
B4
C4
D4
E4
F4
G4
H4
A18
A20
DQ2
DQ10
DQ11
DQ3
RY/BY# WP#/ACC
A3
B3
C3
D3
E3
F3
G3
H3
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A2
B2
C2
D2
E2
F2
G2
H2
A3
A4
A2
A1
A0
CE#
OE#
VSS
A1
B1
C1
D1
E1
F1
G1
H1
NC
NC
NC
NC
NC
VIO
NC
NC
Document Number: 002-00886 Rev. *A
Page 8 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
4.3
LAA064—64 ball Fortified Ball Grid Array, 11 x 13 mm
Figure 4.2 LAA064—64ball Fortified Ball Grid Array (FBGA), 11 x 13 mm
NOTES:
PACKAGE
LAA 064
JEDEC
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
N/A
2. ALL DIMENSIONS ARE IN MILLIMETERS.
13.00 mm x 11.00 mm
PACKAGE
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
SYMBOL
MIN
NOM
MAX
NOTE
A
---
---
1.40
A1
0.40
---
---
STANDOFF
A2
0.60
---
---
BODY THICKNESS
PROFILE HEIGHT
D
13.00 BSC.
BODY SIZE
E
11.00 BSC.
BODY SIZE
D1
7.00 BSC.
MATRIX FOOTPRINT
E1
7.00 BSC.
MATRIX FOOTPRINT
MD
8
MATRIX SIZE D DIRECTION
ME
8
MATRIX SIZE E DIRECTION
N
64
BALL COUNT
φb
0.50
0.60
0.70
BALL DIAMETER
eD
1.00 BSC.
BALL PITCH - D DIRECTION
eE
1.00 BSC.
BALL PITCH - E DIRECTION
SD / SE
0.50 BSC.
SOLDER BALL PLACEMENT
NONE
DEPOPULATED SOLDER BALLS
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
3354 \ 16-038.12d
Document Number: 002-00886 Rev. *A
Page 9 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Figure 4.3 56-pin Standard TSOP (Top View)
NC on S29GL128P
NC on S29GL256P
NC on S29GL512P
A23
A22
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
A21
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
NC
NC
4.4
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
A24
A25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
NC
VIO
TS056—56-Pin Standard Thin Small Outline Package (TSOP)
Figure 4.4 56-Pin Thin Small Outline Package (TSOP), 14 x 20 mm
Document Number: 002-00886 Rev. *A
Page 10 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
PACKAGE
JEDEC
SYMBOL
NOTES:
TS 56
MO-142 (B) EC
MIN.
NOM.
MAX.
1
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982.)
A
---
---
1.20
2
PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP).
A1
0.05
---
0.15
3
A2
0.95
1.00
1.05
b1
0.17
0.20
0.23
TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS
DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE
LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE.
b
c1
0.17
0.10
0.22
---
0.27
0.16
4
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE
MOLD PROTUSION IS 0.15 mm PER SIDE.
5
c
0.10
---
0.21
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE
DAMBAR PROTUSION SHALL BE 0.08 mm TOTAL IN EXCESS OF b
DIMENSION AT MAX MATERIAL CONDITION. MINIMUM SPACE BETWEEN
PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 mm.
6
THESE DIMESIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN
0.10 mm AND 0.25 mm FROM THE LEAD TIP.
7
LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
SEATING PLANE.
8
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
D
19.80
20.00
20.20
D1
18.30
18.40
18.50
E
13.90
14.00
14.10
e
L
0.50 BASIC
0.50
0.60
0.70
O
0˚
-
8˚
R
0.08
---
0.20
N
56
Document Number: 002-00886 Rev. *A
3160\38.10A
Page 11 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
5.
Additional Resources
Visit www.spansion.com to obtain the following related documents:
5.1
Application Notes
The following is a list of application notes related to this product. All Spansion application notes are available at http://
www.spansion.com/Support/TechnicalDocuments/Pages/ApplicationNotes.aspx
 Using the Operation Status Bits in AMD Devices
 Understanding Page Mode Flash Memory Devices
 MirrorBit® Flash Memory Write Buffer Programming and Page Buffer Read
 Common Flash Interface Version 1.4 Vendor Specific Extensions
 MirrorBit® Flash Memory Write Buffer Programming and Page Buffer Read
 Taking Advantage of Page Mode Read on the MCF5407 Coldfire
 Migration to S29GL128N and S29GL256N based on 110nm MirrorBit® Technology
 Optimizing Program/Erase Times
 Practical Guide to Endurance and Data Retention
 Configuring FPGAs using Spansion S29GL-N Flash
 Connecting Spansion™ Flash Memory to a System Address Bus
 Connecting Unused Data Lines of MirrorBit® Flash
 Reset Voltage and Timing Requirements for MirrorBit® Flash
 Versatile IO: DQ and Enhanced
5.2
Specification Bulletins
Contact your local sales office for details.
5.3
Hardware and Software Support
Downloads and related information on Flash device support is available at
http://www.spansion.com/Support/Pages/DriversSoftware.aspx
 Spansion low-level drivers
 Enhanced Flash drivers
 Flash file system
Downloads and related information on simulation modeling and CAD modeling support is available at
http://www.spansion.com/Support/Pages/SimulationModels.aspx
 VHDL and Verilog
 IBIS
 ORCAD
5.4
Contacting Spansion
Obtain the latest list of company locations and contact information on our web site at
http://www.spansion.com/About/Pages/Locations.aspx
Document Number: 002-00886 Rev. *A
Page 12 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
6.
Product Overview
The S29GL-P family consists of 1 Gb, 512 Mb, 256 Mb and 128 Mb, 3.0-volt-only, page mode Flash devices optimized for today’s
embedded designs that demand a large storage array and rich functionality. These devices are manufactured using 90 nm MirrorBit
technology. These products offer uniform 64 Kword (128 Kbyte) uniform sectors and feature VersatileIO control, allowing control and
I/O signals to operate from 1.65 V to VCC. Additional features include:
 Single word programming or a 32-word programming buffer for an increased programming speed
 Program Suspend/Resume and Erase Suspend/Resume
 Advanced Sector Protection methods for protecting sectors as required
 128 words/256 bytes of Secured Silicon area for storing customer and factory secured information. The Secured Silicon Sector is
One Time Programmable.
6.1
Memory Map
The S29GL-P devices consist of uniform 64 Kword (128 Kbyte) sectors organized as shown in Table –Table .
S29GL01GP Sector & Memory Address Map
Uniform Sector
Size
Sector
Count
64 Kword/
128 Kbyte
1024
Sector
Range
Address Range (16-bit)
Notes
SA00
0000000h - 000FFFFh
Sector Starting Address
:
:
SA1023
3FF0000H - 3FFFFFFh
Sector Ending Address
Note
This table has been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges that are not explicitly listed
(such as SA001-SA1022) have sector starting and ending addresses that form the same pattern as all other sectors of that size. For example, all 128 Kb sectors have the
pattern xxx0000h-xxxFFFFh.
S29GL512P Sector & Memory Address Map
Uniform Sector
Size
64 Kword/
128 Kbyte
Sector
Count
512
Sector
Range
Address Range (16-bit)
Notes
SA00
0000000h - 000FFFFh
Sector Starting Address
:
:
SA511
1FF0000H - 1FFFFFFh
Sector Ending Address
Note
This table has been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges that are not explicitly listed
(such as SA001-SA510) have sector starting and ending addresses that the same pattern as all other sectors of that size. For example, all 128 Kb sectors have the pattern
xxx0000h-xxxFFFFh.
S29GL256P Sector & Memory Address Map
Uniform Sector
Size
64 Kword/
128 Kbyte
Sector
Count
256
Sector
Range
Address Range (16-bit)
Notes
SA00
0000000h - 000FFFFh
Sector Starting Address
:
:
SA255
0FF0000H - 0FFFFFFh
Sector Ending Address
Note
This table has been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges that are not explicitly listed
(such as SA001-SA254) have sector starting and ending addresses that form the same pattern as all other sectors of that size. For example, all 128 Kb sectors have the
pattern xxx0000h-xxxFFFFh.
Document Number: 002-00886 Rev. *A
Page 13 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
S29GL128P Sector & Memory Address Map
Uniform Sector
Size
64 Kword/
128 Kbyte
Sector
Count
Sector
Range
Address Range (16-bit)
Notes
SA00
0000000h - 000FFFFh
Sector Starting Address
128
:
:
SA127
07F0000 - 7FFFFF
Sector Ending Address
Note
This table has been condensed to show sector-related information for an entire device on a single page. Sectors and their address ranges that are not explicitly listed
(such as SA001-SA510) have sector starting and ending addresses that form the same pattern as all other sectors of that size. For example, all 128 Kb sectors have the
pattern xxx0000h-xxxFFFFh.
7. Device Operations
This section describes the read, program, erase, handshaking, and reset features of the Flash devices.
Operations are initiated by writing specific commands or a sequence with specific address and data patterns into the command
registers (see Table through Table ). The command register itself does not occupy any addressable memory location; rather, it is
composed of latches that store the commands, along with the address and data information needed to execute the command. The
contents of the register serve as input to the internal state machine and the state machine outputs dictate the function of the device.
Writing incorrect address and data values or writing them in an improper sequence may place the device in an unknown state, in
which case the system must pull the RESET# pin low or power cycle the device to return the device to the reading array data mode.
7.1
Device Operation Table
The device must be setup appropriately for each operation. Table describes the required state of each control pin for any particular
operation.
Device Operations
DQ8–DQ15
CE#
OE#
WE#
RESET#
WP#/ACC
Addresses
(Note 1)
DQ0–DQ7
BYTE#= VIH
Read
L
L
H
H
X
AIN
DOUT
DOUT
Write (Program/Erase)
L
H
L
H
(Note 2)
AIN
(Note 3)
(Note 3)
Accelerated Program
L
H
L
H
VHH
AIN
(Note 3)
(Note 3)
Operation
BYTE#= VIL
DQ8–DQ14
= High-Z,
DQ15 = A-1
VCC ± 0.3 V
X
X
VCC ± 0.3 V
H
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
X
High-Z
High-Z
High-Z
Standby
Legend
L = Logic Low = VIL, H = Logic High = VIH, VHH = 11.5–12.5V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes
1. Addresses are AMax:A0 in word mode; AMax:A-1 in byte mode.
2. If WP# = VIL, on the outermost sector remains protected. If WP# = VIH, the outermost sector is unprotected. WP# has an internal pull-up; when unconnected, WP# is
at VIH. All sectors are unprotected when shipped from the factory (The Secured Silicon Sector can be factory protected depending on version ordered.)
3. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm.
Document Number: 002-00886 Rev. *A
Page 14 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
7.2
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic
‘1’, the device is in word configuration, DQ0-DQ15 are active and controlled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ0-DQ7 are active and controlled by
CE# and OE#. The data I/O pins DQ8-DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function.
7.3
VersatileIOTM (VIO) Control
The VersatileIOTM (VIO) control allows the host system to set the voltage levels that the device generates and tolerates on all inputs
and outputs (address, control, and DQ signals). VIO range is 1.65 to VCC. See Ordering Information on page 4 for VIO options on this
device.
For example, a VIO of 1.65-3.6 volts allows for I/O at the 1.8 or 3 volt levels, driving and receiving signals to and from other 1.8 or 3
V devices on the same data bus.
7.4
Read
All memories require access time to output array data. In a read operation, data is read from one memory location at a time.
Addresses are presented to the device in random order, and the propagation delay through the device causes the data on its outputs
to arrive with the address on its inputs.
The device defaults to reading array data after device power-up or hardware reset. To read data from the memory array, the system
must first assert a valid address on Amax-A0, while driving OE# and CE# to VIL. WE# must remain at VIH. All addresses are latched
on the falling edge of CE#. Data will appear on DQ15-DQ0 after address access time (tACC), which is equal to the delay from stable
addresses to valid output data. The OE# signal must be driven to VIL. Data is output on DQ15-DQ0 pins after the access time (tOE)
has elapsed from the falling edge of OE#, assuming the tACC access time has been meet.
7.5
Page Read Mode
The device is capable of fast page mode read and is compatible with the page mode Mask ROM read operation. This mode provides
faster read access speed for random locations within a page. The page size of the device is 8 words/16 bytes. The appropriate page
is selected by the higher address bits A(max)-A3. Address bits A2-A0 in word mode (A2 to A-1 in byte mode) determine the specific
word within a page. The microprocessor supplies the specific word location.
The random or initial page access is equal to tACC or tCE and subsequent page read accesses (as long as the locations specified by
the microprocessor falls within that page) is equivalent to tPACC. When CE# is de-asserted and reasserted for a subsequent access,
the access time is tACC or tCE. Fast page mode accesses are obtained by keeping the “read-page addresses” constant and changing
the “intra-read page” addresses.
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Page 15 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
7.6
Autoselect
The Autoselect mode provides manufacturer ID, Device identification, and sector protection information, through identifier codes
output from the internal register (separate from the memory array) on DQ7-DQ0. This mode is primarily intended for programming
equipment to automatically match a device to be programmed with its corresponding programming algorithm (see Table ). The
Autoselect codes can also be accessed in-system.
There are two methods to access autoselect codes. One uses the autoselect command, the other applies VID on address pin A9.
When using programming equipment, the autoselect mode requires VID (11.5 V to 12.5 V) on address pin A9. Address pins must be
as shown in Table .
 To access Autoselect mode without using high voltage on A9, the host system must issue the Autoselect command.
 The Autoselect command sequence may be written to an address within a sector that is either in the read or erase-suspend-read
mode.
 The Autoselect command may not be written while the device is actively programming or erasing.
 The system must write the reset command to return to the read mode (or erase-suspend-read mode if the sector was previously
in Erase Suspend).
 It is recommended that A9 apply VID after power-up sequence is completed. In addition, it is recommended that A9 apply from VID
to VIH/VIL before power-down the VCC/VIO.
 See Table on page 64 for command sequence details.
 When verifying sector protection, the sector address must appear on the appropriate highest order address bits (see Table to
Table ). The remaining address bits are don't care. When all necessary bits have been set as required, the programming equipment
may then read the corresponding identifier code on DQ15-DQ0. The Autoselect codes can also be accessed in-system through the
command register.
Document Number: 002-00886 Rev. *A
Page 16 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Autoselect Codes, (High Voltage Method)
A6
A3
to
A2
A1
A0
L
X
L
L
L
00
X
01h
L
L
H
22
X
7Eh
H
H
L
22
X
28h
Cycle 3
H
H
H
22
X
01h
Cycle 1
L
L
H
22
X
7Eh
H
H
L
22
X
23h
H
H
H
22
X
01h
Description
Device ID
Device ID
Device ID
Device ID
L
L
H
X
X
A9
A8
to
A7
VID
X
DQ8 to DQ15
A5
to
A4
Manufacturer ID:
Spansion Product
S29GL128P S29GL256P S29GL512P S29GL01GP
Amax A14
to
to
CE# OE# WE# A16 A10
Cycle 1
Cycle 2
Cycle 2
L
L
L
L
H
X
H
X
X
X
VID
VID
X
X
L
L
X
X
Cycle 3
BYTE# BYTE#
= VIL
= VIH
DQ7 to DQ0
Cycle 1
L
L
H
22
X
7Eh
Cycle 2
H
H
L
22
X
22h
Cycle 3
H
H
H
22
X
01h
Cycle 1
L
L
H
22
X
7Eh
H
H
L
22
X
21h
H
H
H
22
X
01h
Cycle 2
L
L
L
L
H
X
H
X
X
X
VID
VID
X
X
L
L
X
X
Cycle 3
Sector Group
Protection Verification
L
L
H
SA
X
VID
X
L
X
L
H
L
X
X
01h (protected),
00h (unprotected)
Secured Silicon Sector
Indicator Bit (DQ7),
WP# protects highest
address sector
L
L
H
X
X
VID
X
L
X
L
H
H
X
X
99h (factory locked),
19h (not factory
locked)
Secured Silicon Sector
Indicator Bit (DQ7),
WP# protects lowest
address sector
L
L
H
X
X
VID
X
L
X
L
H
H
X
X
89h (factory locked),
09h (not factory
locked)
Legend
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care. VID = 11.5V to 12.5V
Autoselect Addresses in System
Description
Address
Read Data (word/byte mode)
Manufacturer ID
Base + 00h
xx01h/1h
Device ID, Word 1
Base + 01h
227Eh/7Eh
Device ID, Word 2
Base + 0Eh
2228h/28h (GL01GP)
2223h/23h (GL512P)
2222h/22h (GL256P)
2221h/21h (GL128P)
Device ID, Word 3
Base + 0Fh
Secure Device Verify
Base + 03h
Sector Protect Verify
(SA) + 02h
2201h/01h
For S29GLxxxPH: XX19h/19h = Not Factory Locked. XX99h/99h = Factory Locked.
For S29GLxxxPL: XX09h/09h = Not Factory Locked. XX89h/89h = Factory Locked.
xx01h/01h = Locked, xx00h/00h = Unlocked
Document Number: 002-00886 Rev. *A
Page 17 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Software Functions and Sample Code
Autoselect Entry in System
(LLD Function = lld_AutoselectEntryCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Unlock Cycle 2
Write
Base + AAAh
Base + 555h
0x00AAh
Base + 555h
Base + 2AAh
0x0055h
Autoselect Command
Write
Base + AAAh
Base + 555h
0x0090h
Autoselect Exit
(LLD Function = lld_AutoselectExitCmd)
Cycle
Operation
Byte Address
Word Address
Data
Autoselect Exit Command
Write
base + XXXh
base + XXXh
0x00F0h
Note
1. Any offset within the device works.
2. base = base address.
The following is a C source code example of using the autoselect function to read the manufacturer ID. Refer to the Spansion Low
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory software
development guidelines.
/* Here is an example of Autoselect mode (getting manufacturer ID) */
/* Define UINT16 example: typedef unsigned short UINT16; */
UINT16 manuf_id;
/* Auto Select Entry */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
*( (UINT16 *)base_addr + 0x555 ) = 0x0090; /* write autoselect command */
/* multiple reads can be performed after entry */
manuf_id = *( (UINT16 *)base_addr + 0x000 ); /* read manuf. id */
/*
Autoselect exit */
*( (UINT16 *)base_addr + 0x000 ) = 0x00F0; /* exit autoselect (write reset command) */
Document Number: 002-00886 Rev. *A
Page 18 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
7.7
Program/Erase Operations
These devices are capable of several modes of programming and or erase operations which are described in detail in the following
sections.
During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing address, command, and data.
Addresses are latched on the last falling edge of WE# or CE#, while data is latched on the 1st rising edge of WE# or CE#.
The Unlock Bypass feature allows the host system to send program commands to the Flash device without first writing unlock cycles
within the command sequence. See Section 7.7.8 for details on the Unlock Bypass function.
Note the following:
 When the Embedded Program algorithm is complete, the device returns to the read mode.
 The system can determine the status of the program operation by reading the DQ status bits. Refer to the Write Operation Status
on page 31 for information on these status bits.
 An “0” cannot be programmed back to a “1.” A succeeding read shows that the data is still “0.”
 Only erase operations can convert a “0” to a “1.”
 Any commands written to the device during the Embedded Program/Erase are ignored except the Suspend commands.
 Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in progress.
 A hardware reset and/or power removal immediately terminates the Program/Erase operation and the Program/Erase command
sequence should be reinitiated once the device has returned to the read mode to ensure data integrity.
 Programming is allowed in any sequence and across sector boundaries for single word programming operation. See Write Buffer
Programming on page 21 when using the write buffer.
 Programming to the same word address multiple times without intervening erases is permitted.
7.7.1
Single Word Programming
Single word programming mode is one method of programming the Flash. In this mode, four Flash command write cycles are used
to program an individual Flash address. The data for this programming operation could be 8 or 16-bits wide.
While the single word programming method is supported by most Spansion devices, in general Single Word Programming is not
recommended for devices that support Write Buffer Programming. See Table on page 64 for the required bus cycles and Figure 7.1
for the flowchart.
When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are no longer latched.
The system can determine the status of the program operation by reading the DQ status bits. Refer to Write Operation Status
on page 31 for information on these status bits.
 During programming, any command (except the Suspend Program command) is ignored.
 The Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in progress.
 A hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once the
device has returned to the read mode, to ensure data integrity.
 Programming to the same address multiple times continuously (for example, “walking” a bit within a word) is permitted.
Document Number: 002-00886 Rev. *A
Page 19 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Figure 7.1 Single Word Program
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Unlock Cycle 1
Unlock Cycle 2
Write Program Command:
Address 555h, Data A0h
Setup Command
Program Address (PA),
Program Data (PD)
Program Data to Address:
PA, PD
Perform Polling Algorithm
(see Write Operation Status
flowchart)
Polling Status
= Busy?
Yes
No
Yes
Polling Status
= Done?
No
PASS. Device is in
read mode.
Document Number: 002-00886 Rev. *A
Error condition
(Exceeded Timing Limits)
FAIL. Issue reset command
to return to read array mode.
Page 20 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Software Functions and Sample Code
Single Word/Byte Program
(LLD Function = lld_ProgramCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Unlock Cycle 2
Write
Base + AAAh
Base + 555h
00AAh
Base + 555h
Base + 2AAh
0055h
Program Setup
Write
Program
Write
Base + AAAh
Base + 555h
00A0h
Byte Address
Word Address
Data
Note
Base = Base Address.
The following is a C source code example of using the single word program function. Refer to the Spansion Low Level Driver User’s
Guide (available on www.spansion.com) for general information on Spansion Flash memory software development guidelines.
/* Example: Program Command
*/
*( (UINT16 *)base_addr + 0x555 )
*( (UINT16 *)base_addr + 0x2AA )
*( (UINT16 *)base_addr + 0x555 )
*( (UINT16 *)pa )
/* Poll for program completion */
7.7.2
=
=
=
=
0x00AA;
0x0055;
0x00A0;
data;
/*
/*
/*
/*
write
write
write
write
unlock cycle 1
unlock cycle 2
program setup command
data to be programmed
*/
*/
*/
*/
Write Buffer Programming
Write Buffer Programming allows the system to write a maximum of 32 words in one programming operation. This results in a faster
effective word programming time than the standard “word” programming algorithms. The Write Buffer Programming command
sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the Write Buffer Load
command written at the Sector Address in which programming occurs. At this point, the system writes the number of “word locations
minus 1” that are loaded into the page buffer at the Sector Address in which programming occurs. This tells the device how many
write buffer addresses are loaded with data and therefore when to expect the “Program Buffer to Flash” confirm command. The
number of locations to program cannot exceed the size of the write buffer or the operation aborts. (Number loaded = the number of
locations to program minus 1. For example, if the system programs 6 address locations, then 05h should be written to the device.)
The system then writes the starting address/data combination. This starting address is the first address/data pair to be programmed,
and selects the “write-buffer-page” address. All subsequent address/data pairs must fall within the elected write-buffer-page.
The “write-buffer-page” is selected by using the addresses AMAX–A5.
The “write-buffer-page” addresses must be the same for all address/data pairs loaded into the write buffer. (This means Write Buffer
Programming cannot be performed across multiple “write-buffer-pages.” This also means that Write Buffer Programming cannot be
performed across multiple sectors. If the system attempts to load programming data outside of the selected “write-buffer-page”, the
operation ABORTs.)
After writing the Starting Address/Data pair, the system then writes the remaining address/data pairs into the write buffer.
Note that if a Write Buffer address location is loaded multiple times, the “address/data pair” counter is decremented for every data
load operation. Also, the last data loaded at a location before the “Program Buffer to Flash” confirm command is the data
programmed into the device. It is the software's responsibility to comprehend ramifications of loading a write-buffer location more
than once. The counter decrements for each data load operation, NOT for each unique write-buffer-address location. Once the
specified number of write buffer locations have been loaded, the system must then write the “Program Buffer to Flash” command at
the Sector Address. Any other address/data write combinations abort the Write Buffer Programming operation. The Write Operation
Status bits should be used while monitoring the last address location loaded into the write buffer. This eliminates the need to store
an address in memory because the system can load the last address location, issue the program confirm command at the last
loaded address location, and then check the write operation status at that same address. DQ7, DQ6, DQ5, DQ2, and DQ1 should be
monitored to determine the device status during Write Buffer Programming.
The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume commands. Upon
successful completion of the Write Buffer Programming operation, the device returns to READ mode.
The Write Buffer Programming Sequence is ABORTED under any of the following conditions:
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Page 21 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
 Load a value that is greater than the page buffer size during the “Number of Locations to Program” step.
 Write to an address in a sector different than the one specified during the Write-Buffer-Load command.
 Write an Address/Data pair to a different write-buffer-page than the one selected by the “Starting Address” during the “write buffer
data loading” stage of the operation.
 Writing anything other than the Program to Buffer Flash Command after the specified number of “data load” cycles.
The ABORT condition is indicated by DQ1 = 1, DQ7 = DATA# (for the “last address location loaded”), DQ6 = TOGGLE, DQ5 = 0.
This indicates that the Write Buffer Programming Operation was ABORTED. A “Write-to-Buffer-Abort reset” command sequence is
required when using the write buffer Programming features in Unlock Bypass mode. Note that the Secured Silicon sector,
autoselect, and CFI functions are unavailable when a program operation is in progress.
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash devices are capable of handling
multiple write buffer programming operations on the same write buffer address range without intervening erases.
Use of the write buffer is strongly recommended for programming when multiple words are to be programmed.
Document Number: 002-00886 Rev. *A
Page 22 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Software Functions and Sample Code
Write Buffer Program
(LLD Functions Used = lld_WriteToBufferCmd, lld_ProgramBufferToFlashCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 555h
Base + 2AAh
0055h
3
Write Buffer Load Command
Write
Sector Address
0025h
4
Write Word Count
Write
Sector Address
Word Count (N–1)h
Number of words (N) loaded into the write buffer can be from 1 to 32 words (1 to 64 bytes).
5 to 36
Load Buffer Word N
Write
Program Address, Word N
Word N
Last
Write Buffer to Flash
Write
Sector Address
0029h
Notes
1. Base = Base Address.
2. Last = Last cycle of write buffer program operation; depending on number of words written, the total number of cycles may be from 6 to 37.
3. For maximum efficiency, it is recommended that the write buffer be loaded with the highest number of words (N words) possible.
The following is a C source code example of using the write buffer program function. Refer to the Spansion Low Level Driver User’s
Guide (available on www.spansion.com) for general information on Spansion Flash memory software development guidelines.
/* Example: Write Buffer Programming Command
*/
/* NOTES: Write buffer programming limited to 16 words. */
/*
All addresses to be written to the flash in
*/
/*
one operation must be within the same flash
*/
/*
page. A flash page begins at addresses
*/
/*
evenly divisible by 0x20.
*/
UINT16 *src = source_of_data;
/* address of source data
*/
UINT16 *dst = destination_of_data;
/* flash destination address
*/
UINT16 wc
= words_to_program -1;
/* word count (minus 1)
*/
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
/* write unlock cycle 1
*/
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
/* write unlock cycle 2
*/
*( (UINT16 *)sector_address )
= 0x0025;
/* write write buffer load command */
*( (UINT16 *)sector_address )
= wc;
/* write word count (minus 1)
*/
for (i=0;i<=wc;i++)
{
*dst++ = *src++; /* ALL dst MUST BE in same Write Buffer */
}
*( (UINT16 *)sector_address )
/* poll for completion */
= 0x0029;
/* write confirm command
*/
/* Example: Write Buffer Abort Reset */
*( (UINT16 *)addr + 0x555 ) = 0x00AA;
*( (UINT16 *)addr + 0x2AA ) = 0x0055;
*( (UINT16 *)addr + 0x555 ) = 0x00F0;
Document Number: 002-00886 Rev. *A
/* write unlock cycle 1
/* write unlock cycle 2
/* write buffer abort reset
*/
*/
*/
Page 23 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Figure 7.2 Write Buffer Programming Operation
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Unlock Cycle 1
Unlock Cycle 2
Issue
Write Buffer Load Command:
Address SA, Data 25h
Load Word Count to Program
Program Data to Address:
SA, wc
wc = number of words – 1
Yes
Confirm command:
SA = 0x29h
wc = 0?
No
Write Next Word,
Decrement wc:
wc = wc – 1
No
Perform Polling Algorithm
Write Buffer
Abort Desired?
(see Write Operation Status
flowchart)
Yes
Polling Status
= Done?
Write to a Different
Sector Address to Cause
Write Buffer Abort
Yes
No
No
Error?
Yes
Yes
Write Buffer
Abort?
No
RESET. Issue Write Buffer
Abort Reset Command
Document Number: 002-00886 Rev. *A
FAIL. Issue reset command
to return to read array mode.
PASS. Device is in
read mode.
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7.7.3
Sector Erase
The sector erase function erases one or more sectors in the memory array. (See Table on page 64 and Figure 7.3.) The device
does not require the system to preprogram a sector prior to erase. The Embedded Erase algorithm automatically programs and
verifies the entire memory to an all zero data pattern prior to electrical erase. After a successful sector erase, all locations within the
erased sector contain FFFFh. The system is not required to provide any controls or timings during these operations.
After the command sequence is written, the sector erase time-out tSEA (50 µs) occurs. During the time-out period, additional sector
addresses may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from
one sector to all sectors. The time between these additional cycles must be less than 50 µs. Any sector erase address and
command following the exceeded time-out (50 µs) may or may not be accepted. Any command other than Sector Erase or Erase
Suspend during the time-out period resets that sector to the read mode. The system can monitor DQ3 to determine if the sector
erase timer has timed out (See Section 7.8.6.) The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the sector returns to reading array data and addresses are no longer latched.
The system can determine the status of the erase operation by reading DQ7 or DQ6/DQ2 in the erasing sector. Refer to Section 7.8
for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However,
note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should
be reinitiated once that sector has returned to reading array data, to ensure the sector is properly erased.
The Unlock Bypass feature allows the host system to send program commands to the Flash device without first writing unlock cycles
within the command sequence. See Section 7.7.8 for details on the Unlock Bypass function.
Figure 7.3 illustrates the algorithm for the erase operation. Refer to Section 11.7.5 for parameters and timing diagrams.
Software Functions and Sample Code
Sector Erase
(LLD Function = lld_SectorEraseCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
2
Unlock
Write
Base + AAAh
Base + 555h
00AAh
Base + 555h
Base + 2AAh
0055h
3
Setup Command
Write
Base + AAAh
Base + 555h
0080h
4
Unlock
Write
Base + AAAh
Base + 555h
00AAh
5
Unlock
Write
Base + 555h
Base + 2AAh
0055h
6
Sector Erase Command
Write
Sector Address
Sector Address
0030h
Unlimited additional sectors may be selected for erase; command(s) must be written within 50 µs.
The following is a C source code example of using the sector erase function. Refer to the Spansion Low Level Driver User’s Guide
(available on www.spansion.com) for general information on Spansion Flash memory software development guidelines.
/* Example: Sector Erase Command */
*(
*(
*(
*(
*(
*(
(UINT16
(UINT16
(UINT16
(UINT16
(UINT16
(UINT16
*)base_addr + 0x555
*)base_addr + 0x2AA
*)base_addr + 0x555
*)base_addr + 0x555
*)base_addr + 0x2AA
*)sector_address )
)
)
)
)
)
Document Number: 002-00886 Rev. *A
=
=
=
=
=
=
0x00AA;
0x0055;
0x0080;
0x00AA;
0x0055;
0x0030;
/*
/*
/*
/*
/*
/*
write
write
write
write
write
write
unlock cycle 1
*/
unlock cycle 2
*/
setup command
*/
additional unlock cycle 1 */
additional unlock cycle 2 */
sector erase command
*/
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Figure 7.3 Sector Erase Operation
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Unlock Cycle 1
Unlock Cycle 2
Write Sector Erase Cycles:
Address 555h, Data 80h
Address 555h, Data AAh
Address 2AAh, Data 55h
Sector Address, Data 30h
No
Command Cycle 1
Command Cycle 2
Command Cycle 3
Specify first sector for erasure
Select
Additional
Sectors?
Yes
Write Additional
Sector Addresses
• Each additional cycle must be written within tSEA timeout
• The host system may monitor DQ3 or wait tSEA to ensure
acceptance of erase commands
• No limit on number of sectors
No
Poll DQ3.
DQ3 = 1?
Yes
Last Sector
Selected?
• Commands other than Erase Suspend or selecting additional
sectors for erasure during timeout reset device to reading array
data
No
Yes
Perform Write Operation
Status Algorithm
(see Figure 7.4)
Yes
Status may be obtained by reading DQ7, DQ6 and/or DQ2.
Done?
No
DQ5 = 1?
No
Error condition (Exceeded Timing Limits)
Yes
PASS. Device returns
to reading array.
FAIL. Write reset command
to return to reading array.
Notes
1. See Table on page 64 for erase command sequence.
2. See DQ3: Sector Erase Timeout State Indicator on page 34 for information on the sector erase timeout.
Document Number: 002-00886 Rev. *A
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7.7.4
Chip Erase Command Sequence
Chip erase is a six-bus cycle operation as indicated by Table on page 64. These commands invoke the Embedded Erase algorithm,
which does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and
verifies the entire memory to an all zero data pattern prior to electrical erase. After a successful chip erase, all locations of the chip
contain FFFFh. The system is not required to provide any controls or timings during these operations. The Command Definitions
on page 63 shows the address and data requirements for the chip erase command sequence.
When the Embedded Erase algorithm is complete, that sector returns to the read mode and addresses are no longer latched. The
system can determine the status of the erase operation by using DQ7 or DQ6/DQ2. Refer to “Write Operation Status” for information
on these status bits.
The Unlock Bypass feature allows the host system to send program commands to the Flash device without first writing unlock cycles
within the command sequence. See Section 7.7.8 for details on the Unlock Bypass function.
Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the
erase operation. If that occurs, the chip erase command sequence should be reinitiated once that sector has returned to reading
array data, to ensure the entire array is properly erased.
Software Functions and Sample Code
Chip Erase
(LLD Function = lld_ChipEraseCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
2
Unlock
Write
Base + AAAh
Base + 555h
00AAh
Base + 555h
Base + 2AAh
0055h
3
Setup Command
Write
Base + AAAh
Base + 555h
0080h
4
Unlock
Write
Base + AAAh
Base + 555h
00AAh
5
Unlock
Write
Base + 555h
Base + 2AAh
0055h
6
Chip Erase Command
Write
Base + AAAh
Base + 555h
0010h
The following is a C source code example of using the chip erase function. Refer to the Spansion Low Level Driver User’s Guide
(available on www.spansion.com) for general information on Spansion Flash memory software development guidelines.
/* Example: Chip Erase Command */
/* Note: Cannot be suspended
*/
*( (UINT16 *)base_addr + 0x555 )
*( (UINT16 *)base_addr + 0x2AA )
*( (UINT16 *)base_addr + 0x555 )
*( (UINT16 *)base_addr + 0x555 )
*( (UINT16 *)base_addr + 0x2AA )
*( (UINT16 *)base_addr + 0x555 )
Document Number: 002-00886 Rev. *A
=
=
=
=
=
=
0x00AA;
0x0055;
0x0080;
0x00AA;
0x0055;
0x0010;
/*
/*
/*
/*
/*
/*
write
write
write
write
write
write
unlock cycle 1
*/
unlock cycle 2
*/
setup command
*/
additional unlock cycle 1 */
additional unlock cycle 2 */
chip erase command
*/
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7.7.5
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to,
any sector not selected for erasure. The sector addresses are “don't-cares” when writing this command. This command is valid only
during the sector erase operation, including the tSEA time-out period during the sector erase command sequence. The Erase
Suspend command is ignored if written during the chip erase operation.
When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 20µs (5µs
typical) to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out,
the device immediately terminates the time-out period and suspends the erase operation.
After the erase operation has been suspended, the device enters the erase-suspend-read mode. The system can read data from or
program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any
address within erase-suspended sectors produces status information on DQ7-DQ0. The system can use DQ7, or DQ6, and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. Refer to Table 7.35 for information on these status bits.
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read mode. The system can
determine the status of the program operation using write operation status bits, just as in the standard program operation.
In the erase-suspend-read mode, the system can also issue the Autoselect command sequence. Refer to Write Buffer Programming
on page 21 and the Autoselect on page 16 for details.
To resume the sector erase operation, the system must write the Erase Resume command. The address of the erase-suspended
sector is a “don't-care” when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend
command can be written after the chip has resumed erasing.
Software Functions and Sample Code
Erase Suspend
(LLD Function = lld_EraseSuspendCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Base + XXXh
Base + XXXh
00B0h
The following is a C source code example of using the erase suspend function. Refer to the Spansion Low Level Driver User’s Guide
(available on www.spansion.com) for general information on Spansion Flash memory software development guidelines.
/* Example: Erase suspend command */
*( (UINT16 *)base_addr ) = 0x00B0;
/* write suspend command
*/
Erase Resume
(LLD Function = lld_EraseResumeCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Sector Address
Sector Address
0030h
The following is a C source code example of using the erase resume function. Refer to the Spansion Low Level Driver User’s Guide
(available on www.spansion.com) for general information on Spansion Flash memory software development guidelines.
/* Example: Erase resume command */
*( (UINT16 *)sector_addr ) = 0x0030;
/* write resume command
/* The flash needs adequate time in the resume state */
Document Number: 002-00886 Rev. *A
*/
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7.7.6
Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming operation or a “Write to Buffer”
programming operation so that data can read from any non-suspended sector. When the Program Suspend command is written
during a programming process, the device halts the programming operation within 15µs maximum (5µs typical) and updates the
status bits. Addresses are “don't-cares” when writing the Program Suspend command.
After the programming operation has been suspended, the system can read array data from any non-suspended sector. The
Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data
may be read from any addresses not within a sector in Erase Suspend or Program Suspend. If a read is needed from the Secured
Silicon Sector area, then user must use the proper command sequences to enter and exit this region.
The system may also write the Autoselect Command Sequence when the device is in Program Suspend mode. The device allows
reading Autoselect codes in the suspended sectors, since the codes are not stored in the memory array. When the device exits the
Autoselect mode, the device reverts to Program Suspend mode, and is ready for another valid operation. See Autoselect
on page 16 for more information.
After the Program Resume command is written, the device reverts to programming. The system can determine the status of the
program operation using the write operation status bits, just as in the standard program operation. See Write Operation Status
on page 31 for more information.
The system must write the Program Resume command (address bits are “don't care”) to exit the Program Suspend mode and
continue the programming operation. Further writes of the Program Resume command are ignored. Another Program Suspend
command can be written after the device has resumed programming.
Software Functions and Sample Code
Program Suspend
(LLD Function = lld_ProgramSuspendCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Base + XXXh
Base + XXXh
00B0h
The following is a C source code example of using the program suspend function. Refer to the Spansion Low Level Driver User’s
Guide (available on www.spansion.com) for general information on Spansion Flash memory software development guidelines.
/* Example: Program suspend command */
*( (UINT16 *)base_addr ) = 0x00B0;
/* write suspend command
*/
Program Resume
(LLD Function = lld_ProgramResumeCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Base + XXXh
Base + XXXh
0030h
The following is a C source code example of using the program resume function. Refer to the Spansion Low Level Driver User’s
Guide (available on www.spansion.com) for general information on Spansion Flash memory software development guidelines.
/* Example: Program resume command */
*( (UINT16 *)base_addr ) = 0x0030;
Document Number: 002-00886 Rev. *A
/* write resume command
*/
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7.7.7
Accelerated Program
Accelerated single word programming and write buffer programming operations are enabled through the WP#/ACC pin. This method
is faster than the standard program command sequences.
Note
The accelerated program functions must not be used more than 10 times per sector.
If the system asserts VHH on this input, the device automatically enters the aforementioned Unlock Bypass mode and uses the
higher voltage on the input to reduce the time required for program operations. The system can then use the Write Buffer Load
command sequence provided by the Unlock Bypass mode. Note that if a “Write-to-Buffer-Abort Reset” is required while in Unlock
Bypass mode, the full 3-cycle RESET command sequence must be used to reset the device. Removing VHH from the ACC input,
upon completion of the embedded program operation, returns the device to normal operation.
 Sectors must be unlocked prior to raising WP#/ACC to VHH.
 The WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result.
 It is recommended that WP#/ACC apply VHH after power-up sequence is completed. In addition, it is recommended that WP#/
ACC apply from VHH to VIH/VIL before powering down VCC/VIO.
7.7.8
Unlock Bypass
This device features an Unlock Bypass mode to facilitate shorter programming commands. Once the device enters the Unlock
Bypass mode, only two write cycles are required to program data, instead of the normal four cycles.
This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total
programming time. The Command Definitions on page 63 shows the requirements for the unlock bypass command sequences.
During the unlock bypass mode, only the Read, Program, Write Buffer Programming, Write-to-Buffer-Abort Reset, Unlock Bypass
Sector Erase, Unlock Bypass Chip Erase and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the
system must issue the two-cycle unlock bypass reset command sequence. The first cycle address is “don't care” and the data 90h.
The second cycle need only contain the data 00h. The sector then returns to the read mode.
Software Functions and Sample Code
The following are C source code examples of using the unlock bypass entry, program, and exit functions. Refer to the Spansion Low
Level Driver User’s Guide (available soon on www.spansion.com) for general information on Spansion Flash memory software
development guidelines.
Unlock Bypass Entry
(LLD Function = lld_UnlockBypassEntryCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 555h
Base + 2AAh
0055h
3
Entry Command
Write
Base + AAAh
Base + 555h
0020h
/* Example: Unlock Bypass Entry Command
*/
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
/* write unlock
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
/* write unlock
*( (UINT16 *)base_addr + 0x555 ) = 0x0020;
/* write unlock
/* At this point, programming only takes two write cycles.
/* Once you enter Unlock Bypass Mode, do a series of like
/* operations (programming or sector erase) and then exit
/* Unlock Bypass Mode before beginning a different type of
/* operations.
Document Number: 002-00886 Rev. *A
cycle 1
cycle 2
bypass command
*/
*/
*/
*/
*/
*/
*/
*/
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Unlock Bypass Program
(LLD Function = lld_UnlockBypassProgramCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Program Setup
Write
Base + XXXh
Base + XXXh
00A0h
2
Program Command
Write
Program Address
Program Address
Program Data
/* Example: Unlock Bypass Program Command */
/* Do while in Unlock Bypass Entry Mode!
*/
*( (UINT16 *)base_addr ) = 0x00A0;
/* write program setup command
*/
*( (UINT16 *)pa )
= data;
/* write data to be programmed
/* Poll until done or error.
*/
/* If done and more to program, */
/* do above two cycles again.
*/
*/
Unlock Bypass Reset
(LLD Function = lld_UnlockBypassResetCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Reset Cycle 1
Write
Base + XXXh
Base + XXXh
0090h
2
Reset Cycle 2
Write
Base + XXXh
Base + XXXh
0000h
/* Example: Unlock Bypass Exit Command */
*( (UINT16 *)base_addr ) = 0x0090;
*( (UINT16 *)base_addr ) = 0x0000;
7.8
Write Operation Status
The device provides several bits to determine the status of a program or erase operation. The following subsections describe the
function of DQ1, DQ2, DQ3, DQ5, DQ6, and DQ7.
7.8.1
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or
completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the
command sequence. Note that the Data# Polling is valid only for the last word being programmed in the write-buffer-page during
Write Buffer Programming. Reading Data# Polling status on any word other than the last word to be programmed in the write-bufferpage returns false status information.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7
status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs
the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program
address falls within a protected sector, Data# polling on DQ7 is active, then that sector returns to the read mode.
During the Embedded Erase Algorithm, Data# polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or
if the device enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any
of the sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for
approximately 100µs, then the device returns to the read mode. If not all selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at
an address within a protected sector, the status may not be valid.
Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ6-DQ0 while
Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7.
Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the
Document Number: 002-00886 Rev. *A
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program or erase operation and DQ7 has valid data, the data outputs on DQ6-DQ0 may be still invalid. Valid data on DQ7-D00
appears on successive read cycles.
See the following for more information: Table , shows the outputs for Data# Polling on DQ7. Figure 7.4, shows the Data# Polling
algorithm; and Figure 11.7, shows the Data# Polling timing diagram.
Figure 7.4 Write Operation Status Flowchart
START
- DQ 6 toggles when programming
- DQ 6 and DQ 2 toggle when erasing
- DQ 2 toggles when erase suspend
- DQ 1 set when program error
- DQ 5 set when time out
Read_1
Read_2
Read_3
DQ6 Toggles between
Read_1 & Read_2
and
Read_2 & Read_3
NO
NO
Read_1
Read_2
YES
WriteBuffer
program and
Read_1 DQ1 is
set
YES
RETURN
WRITE ABORT
YES
RETURN
TIME OUT
DQ2 Toggles
NO
RETURN
DONE
NO
YES
Read_1 DQ5 is
set
Document Number: 002-00886 Rev. *A
RETURN
SUSPEND
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7.8.2
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device
has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE#
pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address that is being programmed or
erased causes DQ6 to toggle. When the operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100s,
then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the
device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase
Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erasesuspended. Alternatively, the system can use DQ7 (see DQ7: Data# Polling on page 31).
If a program address falls within a protected sector, DQ6 toggles for approximately 1s after the program command sequence is
written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program Algorithm is complete.
See the following for additional information: Figure 7.4, Figure 11.13 on page 59, and Table .
Toggle Bit I on DQ6 requires either OE# or CE# to be de-asserted and reasserted to show the change in state.
7.8.3
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded
Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE#
pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for
erasure. But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates
whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus,
both status bits are required for sector and mode information. Refer to Table to compare outputs for DQ2 and DQ6. See
Figure 11.14 on page 59 for additional information.
7.8.4
Reading Toggle Bits DQ6/DQ2
Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a
toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read,
the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the
program or erases operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial
two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is
high (see DQ5: Exceeded Timing Limits on page 34). If it is, the system should then determine again whether the toggle bit is
toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has
successfully completed the program or erases operation. If it is still toggling, the device did not complete the operation successfully,
and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially
determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5
through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to
perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the
status of the operation. Refer to Figure 7.4 for more details.
Note
When verifying the status of a write operation (embedded program/erase) of a memory sector, DQ6 and DQ2 toggle between high
and low states in a series of consecutive and contiguous status read cycles. In order for this toggling behavior to be properly
observed, the consecutive status bit reads must not be interleaved with read accesses to other memory sectors. If it is not possible
to temporarily prevent reads to other memory sectors, then it is recommended to use the DQ7 status bit as the alternative method of
determining the active or inactive status of the write operation.
Document Number: 002-00886 Rev. *A
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7.8.5
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5
produces a “1,” indicating that the program or erase cycle was not successfully completed. The device does not output a 1 on DQ5 if
the system tries to program a 1 to a location that was previously programmed to 0. Only an erase operation can change a 0 back to
a 1. Under this condition, the device ignores the bit that was incorrectly instructed to be programmed from a 0 to a 1, while any other
bits that were correctly requested to be changed from 1 to 0 are programmed. Attempting to program a 0 to a 1 is masked during the
programming operation. Under valid DQ5 conditions, the system must write the reset command to return to the read mode (or to the
erase-suspend-read mode if a sector was previously in the erase-suspend-program mode).
7.8.6
DQ3: Sector Erase Timeout State Indicator
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The
sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also
applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the
time between additional sector erase commands from the system can be assumed to be less than tSEA, then the system need not
monitor DQ3. See Sector Erase on page 25 for more details.
After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure
that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun;
all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device accepts
additional sector erase commands. To ensure the command has been accepted, the system software should check the status of
DQ3 prior to and following each sub-sequent sector erase command. If DQ3 is high on the second status check, the last command
might not have been accepted. Table shows the status of DQ3 relative to the other status bits.
7.8.7
DQ1: Write to Buffer Abort
DQ1 indicates whether a Write to Buffer operation was aborted. Under these conditions DQ1 produces a “1”. The system must issue
the “Write to Buffer Abort Reset” command sequence to return the device to reading array data. See Write Buffer Programming
on page 21 for more details.
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Write Operation Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
Embedded Erase Algorithm
0
Toggle
0
1
Status
Standard
Mode
Program
Suspend
Mode
Erase
Suspend
Mode
Write-toBuffer
ProgramSuspend
Read
EraseSuspend
Read
DQ1
RY/
BY#
No toggle
0
0
Toggle
N/A
0
Program-Suspended
Sector
Invalid (not allowed)
1
Non-Program
Suspended Sector
Data
1
Erase-Suspended
Sector
1
No toggle
0
Non-Erase
Suspended Sector
N/A
Toggle
N/A
Data
1
1
Erase-Suspend-Program
(Embedded Program)
DQ7#
Toggle
0
N/A
N/A
N/A
0
Busy (Note 3)
DQ7#
Toggle
0
N/A
N/A
0
0
Abort (Note 4)
DQ7#
Toggle
0
N/A
N/A
1
0
Notes
1. DQ5 switches to 1 when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the maximum timing limits. Refer toDQ5: Exceeded
Timing Limits on page 34 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to 1 when the device has aborted the write-to-buffer operation
7.9
Writing Commands/Command Sequences
During a write operation, the system must drive CE# and WE# to VIL and OE# to VIH when providing an address, command, and
data. Addresses are latched on the last falling edge of WE# or CE#, while data is latched on the 1st rising edge of WE# or CE#. An
erase operation can erase one sector, multiple sectors, or the entire device. Table – Table indicate the address space that each
sector occupies. The device address space is divided into uniform 64KW/128KB sectors. A sector address is the set of address bits
required to uniquely select a sector. ICC2 in “DC Characteristics” represents the active current specification for the write mode. “AC
Characteristics” contains timing specification tables and timing diagrams for write operations.
7.9.1
RY/BY#
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The
RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output,
several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. This feature allows the host system to detect
when data is ready to be read by simply monitoring the RY/BY# pin, which is a dedicated output.
7.9.2
Hardware Reset
The RESET# input provides a hardware method of resetting the device to reading array data. When RESET# is driven low for at
least a period of tRP (RESET# Pulse Width), the device immediately terminates any operation in progress, tristates all outputs, resets
the configuration register, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the
internal state machine to reading array data.
To ensure data integrity Program/Erase operations that were interrupted should be reinitiated once the device is ready to accept
another command sequence.
When RESET# is held at VSS, the device draws VCC reset current (ICC5). If RESET# is held at VIL, but not at VSS, the standby
current is greater. RESET# may be tied to the system reset circuitry which enables the system to read the boot-up firmware from the
Flash memory upon a system reset. See Figure 11.7 on page 54 and Figure 11.8 on page 55 for timing diagrams.
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7.9.3
Software Reset
Software reset is part of the command set (see Table on page 64) that also returns the device to array read mode and must be used
for the following conditions:
1. to exit Autoselect mode
2. when DQ5 goes high during write status operation that indicates program or erase cycle was not successfully completed
3. exit sector lock/unlock operation.
4. to return to erase-suspend-read mode if the device was previously in Erase Suspend mode.
5. after any aborted operations
Software Functions and Sample Code
Reset
(LLD Function = lld_ResetCmd)
Cycle
Operation
Byte Address
Word Address
Data
Reset Command
Write
Base + xxxh
Base + xxxh
00F0h
Note
Base = Base Address.
The following is a C source code example of using the reset function. Refer to the Spansion Low Level Driver User’s Guide
(available on www.spansion.com) for general information on Spansion Flash memory software development guidelines.
/* Example: Reset (software reset of Flash state machine) */
*( (UINT16 *)base_addr ) = 0x00F0;
The following are additional points to consider when using the reset command:
 This command resets the sectors to the read and address bits are ignored.
 Reset commands are ignored during program and erase operations.
 The reset command may be written between the cycles in a program command sequence before programming begins (prior to
the third cycle). This resets the sector to which the system was writing to the read mode.
 If the program command sequence is written to a sector that is in the Erase Suspend mode, writing the reset command returns
that sector to the erase-suspend-read mode.
 The reset command may be written during an Autoselect command sequence.
 If a sector has entered the Autoselect mode while in the Erase Suspend mode, writing the reset command returns that sector to
the erase-suspend-read mode.
 If DQ1 goes high during a Write Buffer Programming operation, the system must write the “Write to Buffer Abort Reset” command
sequence to RESET the device to reading array data. The standard RESET command does not work during this condition.
 To exit the unlock bypass mode, the system must issue a two-cycle unlock bypass reset command sequence [see Command
Definitions on page 63 for details].
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8.
Advanced Sector Protection/Unprotection
The Advanced Sector Protection/Unprotection feature disables or enables programming or erase operations in any or all sectors and
can be implemented through software and/or hardware methods, which are independent of each other. This section describes the
various methods of protecting data stored in the memory array. An overview of these methods in shown in Figure 8.1.
Figure 8.1 Advanced Sector Protection/Unprotection
Hardware Methods
Software Methods
Lock Register
(One Time Programmable)
WP#/ACC = VIL
(Highest or Lowest
Sector Locked)
Password Method
Persistent Method
(DQ2)
(DQ1)
64-bit Password
(One Time Protect)
1,2,3
PPB Lock Bit
0 = PPBs Locked
1 = PPBs Unlocked
1. Bit is volatile, and defaults to “1” on reset.
2. Programming to “0” locks all PPBs to their
current state.
3. Once programmed to “0”, requires hardware
reset to unlock.
Memory Array
Persistent
Protection Bit
(PPB)4,5
Sector 0
PPB 0
DYB 0
Sector 1
PPB 1
DYB 1
Sector 2
PPB 2
DYB 2
Sector N-2
PPB N-2
DYB N-2
Sector N-1
PPB N-1
DYB N-1
PPB N
DYB N
3
Sector N
4. N = Highest Address Sector.
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5. 0 = Sector Protected,
1 = Sector Unprotected.
6. PPBs programmed individually,
but cleared collectively
Dynamic
Protection Bit
(DYB)6,7,8
7. 0 = Sector Protected,
1 = Sector Unprotected.
8. Protect effective only if PPB Lock Bit is
unlocked and corresponding PPB is “1”
(unprotected).
9. Volatile Bits: defaults to user choice upon
power-up (see ordering options).
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8.1
Lock Register
As shipped from the factory, all devices default to the persistent mode when power is applied, and all sectors are unprotected,
unless otherwise chosen through the DYB ordering option (see Ordering Information on page 4). The device programmer or host
system must then choose which sector protection method to use. Programming (setting to “0”) any one of the following two one-time
programmable, non-volatile bits locks the part permanently in that mode:
 Lock Register Persistent Protection Mode Lock Bit (DQ1)
 Lock Register Password Protection Mode Lock Bit (DQ2)
Lock Register
DQ15-3
DQ2
DQ1
DQ0
Don’t Care
Password Protection Mode
Lock Bit
Persistent Protection Mode
Lock Bit
Secured Silicon Sector
Protection Bit
For programming lock register bits refer to Table on page 66 and Table on page 68.
Notes
1. If the password mode is chosen, the password must be programmed before setting the corresponding lock register bit.
2. After the Lock Register Bits Command Set Entry command sequence is written, reads and writes for Sector 0 are
disabled, while reads from other sectors are allowed until exiting this mode.
3. If both lock bits are selected to be programmed (to zeros) at the same time, the operation aborts.
4. Once the Password Mode Lock Bit is programmed, the Persistent Mode Lock Bit is permanently disabled, and no
changes to the protection scheme are allowed. Similarly, if the Persistent Mode Lock Bit is programmed, the Password
Mode is permanently disabled.
After selecting a sector protection method, each sector can operate in any of the following three states:
1. Constantly locked. The selected sectors are protected and can not be reprogrammed unless PPB lock bit is cleared via a
password, hardware reset, or power cycle.
2. Dynamically locked. The selected sectors are protected and can be altered via software commands.
3. Unlocked. The sectors are unprotected and can be erased and/or programmed.
These states are controlled by the bit types described in Section 8.2–Section 8.5.
8.2
Persistent Protection Bits
The Persistent Protection Bits are unique and nonvolatile for each sector and have the same endurances as the Flash memory.
Preprogramming and verification prior to erasure are handled by the device, and therefore do not require system monitoring.
Notes
1. Each PPB is individually programmed and all are erased in parallel.
2. While programming PPB for a sector, array data can be read from any other sector, except Sector 0 (used for Data#
Polling) and the sector in which sector PPB is being programmed.
3. Entry command disables reads and writes for the sector selected.
4. Reads within that sector return the PPB status for that sector.
5. All Reads must be performed using the read mode.
6. The specific sector address (A25-A16 GL01GP, A24-A16 GL512P, A23-A16 GL256P, A22-A16 GL128P) are written at the
same time as the program command.
7. If the PPB Lock Bit is set, the PPB Program or erase command does not execute and times-out without programming or
erasing the PPB.
8. There are no means for individually erasing a specific PPB and no specific sector address is required for this operation.
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9. Exit command must be issued after the execution which resets the device to read mode and re-enables reads and writes
for Sector 0.
10. The programming state of the PPB for a given sector can be verified by writing a PPB Status Read Command to the
device as described by the flow chart shown in Figure 8.2.
Figure 8.2 PPB Program Algorithm
Enter PPB
Command Set.
Addr = BA
Program PPB Bit.
Addr = SA
Read Byte Twice
Addr = SA0
No
DQ6 =
Toggle?
Yes
No
DQ5 = 1?
Wait 500 µs
Yes
Read Byte Twice
Addr = SA0
DQ6 =
Toggle?
No
Read Byte.
Addr = SA
Yes
No
FAIL
DQ0 =
'0' (Pgm.)?
Yes
Issue Reset
Command
PASS
Exit PPB
Command Set
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8.2.1
Dynamic Protection Bits
Dynamic Protection Bits are volatile and unique for each sector and can be individually modified. DYBs only control the protection
scheme for unprotected sectors that have their PPBs cleared (erased to “1”). By issuing the DYB Set or Clear command sequences,
the DYBs are set (programmed to “0”) or cleared (erased to “1”), thus placing each sector in the protected or unprotected state
respectively. This feature allows software to easily protect sectors against inadvertent changes yet does not prevent the easy
removal of protection when changes are needed.
Notes
1. The DYBs can be set (programmed to “0”) or cleared (erased to “1”) as often as needed. When the parts are first shipped,
the PPBs are cleared (erased to “1”) and upon power up or reset, the DYBs can be set or cleared depending upon the
ordering option chosen.
2. If the option to clear the DYBs after power up is chosen, (erased to “1”), then the sectorsmay be modified depending upon
the PPB state of that sector (see Table ).
3. The sectors would be in the protected state If the option to set the DYBs after power up is chosen (programmed to “0”).
4. It is possible to have sectors that are persistently locked with sectors that are left in the dynamic state.
5. The DYB Set or Clear commands for the dynamic sectors signify protected or unprotectedstate of the sectors
respectively. However, if there is a need to change the status of the persistently locked sectors, a few more steps are
required. First, the PPB Lock Bit must be cleared by either putting the device through a power-cycle, or hardware reset.
The PPBs can then be changed to reflect the desired settings. Setting the PPB Lock Bit once again locks the PPBs, and
the device operates normally again.
6. To achieve the best protection, it is recommended to execute the PPB Lock Bit Set command early in the boot code and
protect the boot code by holding WP#/ACC = VIL. Note that the PPB and DYB bits have the same function when WP#/
ACC = VHH as they do when ACC =VIH.
8.3
Persistent Protection Bit Lock Bit
The Persistent Protection Bit Lock Bit is a global volatile bit for all sectors. When set (programmed to “0”), it locks all PPBs and when
cleared (programmed to “1”), allows the PPBs to be changed. There is only one PPB Lock Bit per device.
Notes
1. No software command sequence unlocks this bit unless the device is in the password protection mode; only a hardware
reset or a power-up clears this bit.
2. The PPB Lock Bit must be set (programmed to “0”) only after all PPBs are configured to the desired settings.
8.4
Password Protection Method
The Password Protection Method allows an even higher level of security than the Persistent Sector Protection Mode by requiring a
64-bit password for unlocking the device PPB Lock Bit. In addition to this password requirement, after power up and reset, the PPB
Lock Bit is set “0” to maintain the password mode of operation. Successful execution of the Password Unlock command by entering
the entire password clears the PPB Lock Bit, allowing for sector PPBs modifications.
Notes
1. There is no special addressing order required for programming the password. Once the Password is written and verified,
the Password Mode Locking Bit must be set in order to prevent access.
2. The Password Program Command is only capable of programming “0”s. Programming a “1” after a cell is programmed as
a “0” results in a time-out with the cell as a “0”.
3. The password is all “1”s when shipped from the factory.
4. All 64-bit password combinations are valid as a password.
5. There is no means to verify what the password is after it is set.
6. The Password Mode Lock Bit, once set, prevents reading the 64-bit password on the data bus and further password
programming.
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7. The Password Mode Lock Bit is not erasable.
8. The lower two address bits (A1–A0) are valid during the Password Read, Password Program, and Password Unlock.
9. The exact password must be entered in order for the unlocking function to occur.
10. The Password Unlock command cannot be issued any faster than 1 µs at a time to prevent a hacker from running through
all the 64-bit combinations in an attempt to correctly match a password.
11. Approximately 1 µs is required for unlocking the device after the valid 64-bit password is given to the device.
12. Password verification is only allowed during the password programming operation.
13. All further commands to the password region are disabled and all operations are ignored.
14. If the password is lost after setting the Password Mode Lock Bit, there is no way to clear the PPB Lock Bit.
15. Entry command sequence must be issued prior to any of any operation and it disables reads and writes for Sector 0.
Reads and writes for other sectors excluding Sector 0 are allowed.
16. If the user attempts to program or erase a protected sector, the device ignores the command and returns to read mode.
17. A program or erase command to a protected sector enables status polling and returns to read mode without having
modified the contents of the protected sector.
18. The programming of the DYB, PPB, and PPB Lock for a given sector can be verified by writing individual status read
commands DYB Status, PPB Status, and PPB Lock Status to the device.
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Figure 8.3 Lock Register Program Algorithm
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Unlock Cycle 1
Unlock Cycle 2
Write
Enter Lock Register Command:
Address 555h, Data 40h
XXXh = Address don’t care
Program Lock Register Data
Address XXXh, Data A0h
Address XXXh*, Data PD
Program Data (PD): See text for Lock Register definitions
Caution: Lock register can only be progammed once.
Perform Polling Algorithm
(see Write Operation Status
flowchart)
Yes
Done?
No
DQ5 = 1?
No
Error condition (Exceeded Timing Limits)
Yes
PASS. Write Lock Register
Exit Command:
Address XXXh, Data 90h
Address XXXh, Data 00h
Device returns to reading array.
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FAIL. Write rest command
to return to reading array.
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8.5
Advanced Sector Protection Software Examples
Sector Protection Schemes: DYB, PPB and PPB Lock Bit Combinations
Unique Device PPB Lock Bit
0 = locked
1 = unlocked
Sector PPB
0 = protected
1 = unprotected
Sector DYB
0 = protected
1 = unprotected
Sector Protection Status
Any Sector
0
0
x
Protected through PPB
Any Sector
0
0
x
Protected through PPB
Any Sector
0
1
1
Unprotected
Any Sector
0
1
0
Protected through DYB
Any Sector
1
0
x
Protected through PPB
Any Sector
1
0
x
Protected through PPB
Any Sector
1
1
0
Protected through DYB
Any Sector
1
1
1
Unprotected
Table contains all possible combinations of the DYB, PPB, and PPB Lock Bit relating to the status of the sector. In summary, if the
PPB Lock Bit is locked (set to “0”), no changes to the PPBs are allowed. The PPB Lock Bit can only be unlocked (reset to “1”)
through a hardware reset or power cycle. See also Figure 8.1 for an overview of the Advanced Sector Protection feature.
8.6
Hardware Data Protection Methods
The device offers two main types of data protection at the sector level via hardware control:
 When WP#/ACC is at VIL, the either the highest or lowest sector is locked (device specific).
There are additional methods by which intended or accidental erasure of any sectors can be prevented via hardware means. The
following subsections describes these methods:
8.6.1
WP#/ACC Method
The Write Protect feature provides a hardware method of protecting one outermost sector. This function is provided by the WP#/
ACC pin and overrides the previously discussed Sector Protection/Unprotection method.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the highest or lowest sector
independently of whether the sector was protected or unprotected using the method described in Advanced Sector Protection/
Unprotection on page 37.
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the boot sectors were last set to be protected or
unprotected. That is, sector protection or unprotection for these sectors depends on whether they were last protected or
unprotected.
The WP#/ACC pin must be held stable during a command sequence execution. WP# has an internal pull-up; when unconnected,
WP# is set at VIH.
Note
If WP#/ACC is at VIL when the device is in the standby mode, the maximum input load current is increased. See Table 11.2
on page 49 for details.
8.6.2
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down.
The command register and all internal program/erase circuits are disabled, and the device resets to reading array data. Subsequent
writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control inputs to prevent
unintentional writes when VCC is greater than VLKO.
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8.6.3
Write Pulse “Glitch Protection”
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
8.6.4
Power-Up Write Inhibit
If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#.
The internal state machine is automatically reset to the read mode on power-up.
9. Power Conservation Modes
9.1
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current
consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device
enters the CMOS standby mode when the CE# and RESET# inputs are both held at VCC ± 0.3 V. The device requires standard
access time (tCE) for read access, before it is ready to read data. If the device is deselected during erasure or programming, the
device draws active current until the operation is completed. ICC4 in “DC Characteristics” represents the standby current
specification
9.2
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when
addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals.
Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and
always available to the system. ICC6 in Section 11.6 represents the automatic sleep mode current specification.
9.3
Hardware RESET# Input Operation
The RESET# input provides a hardware method of resetting the device to reading array data. When RESET# is driven low for at
least a period of tRP, the device immediately terminates any operation in progress, tristates all outputs, and ignores all read/write
commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The
operation that was interrupted should be reinitiated once the device is ready to accept another command sequence to ensure data
integrity.
When RESET# is held at VSS ± 0.3 V, the device draws ICC reset current (ICC5). If RESET# is held at VIL but not within VSS ± 0.3 V,
the standby current is greater.
RESET# may be tied to the system reset circuitry and thus, a system reset would also reset the Flash memory, enabling the system
to read the boot-up firmware from the Flash memory.
9.4
Output Disable (OE#)
When the OE# input is at VIH, output from the device is disabled. The outputs are placed in the high impedance state. (With the
exception of RY/BY#.)
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10. Secured Silicon Sector Flash Memory Region
The Secured Silicon Sector provides an extra Flash memory region that enables permanent part identification through an Electronic
Serial Number (ESN). The Secured Silicon Sector is 128 words in length and all Secured Silicon reads outside of the 128-word
address range returns invalid data. The Secured Silicon Sector Indicator Bit, DQ7, (at Autoselect address 03h) is used to indicate
whether or not the Secured Silicon Sector is locked when shipped from the factory.
Please note the following general conditions:
 On power-up, or following a hardware reset, the device reverts to sending commands to the normal address space.
 Reads outside of sector SA0 return memory array data.
 Sector SA0 is remapped from memory array to Secured Silicon Sector array.
 Once the Secured Silicon Sector Entry Command is issued, the Secured Silicon Sector Exit command must be issued to exit
Secured Silicon Sector Mode.
 The Secured Silicon Sector is not accessible when the device is executing an Embedded Program or Embedded Erase algorithm.
 The ACC function and unlock bypass modes are not available when the Secured Silicon Sector is enabled.
Secured Silicon Sector Addresses
Secured Silicon Sector
Address Range
000000h–000007h
000008h–00007Fh
10.1
Customer Lockable
ESN Factory Locked
ExpressFlash Factory Locked
Determined by
customer
ESN
ESN or determined by customer
Unavailable
Determined by customer
Factory Locked Secured Silicon Sector
The Factory Locked Secured Silicon Sector is always protected when shipped from the factory and has the Secured Silicon Sector
Indicator Bit (DQ7) permanently set to a “1”. This prevents cloning of a factory locked part and ensures the security of the ESN and
customer code once the product is shipped to the field.
These devices are available pre-programmed with one of the following:
 A random, 8 Word secure ESN only within the Secured Silicon Sector (at addresses 000000H - 000007H)
 Both a random, secure ESN and customer code through the Spansion programming service.
Customers may opt to have their code programmed through the Spansion programming services. Spansion programs the
customer's code, with or without the random ESN. The devices are then shipped from the Spansion factory with the Secured Silicon
Sector permanently locked. Contact your local representative for details on using Spansion programming services.
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10.2
Customer Lockable Secured Silicon Sector
The Customer Lockable Secured Silicon Sector is always shipped unprotected (DQ7 set to “0”), allowing customers to utilize that
sector in any manner they choose. If the security feature is not required, the Secured Silicon Sector can be treated as an additional
Flash memory space.
Please note the following:
 Once the Secured Silicon Sector area is protected, the Secured Silicon Sector Indicator Bit is permanently set to “0.”
 The Secured Silicon Sector can be read any number of times, but can be programmed and locked only once. The Secured
Silicon Sector lock must be used with caution as once locked, there is no procedure available for unlocking the Secured Silicon
Sector area and none of the bits in the Secured Silicon Sector memory space can be modified in any way.
 The accelerated programming (ACC) and unlock bypass functions are not available when the Secured Silicon Sector is enabled.
 Once the Secured Silicon Sector is locked and verified, the system must write the Exit Secured Silicon Sector Region command
sequence which return the device to the memory array at sector 0.
10.3
Secured Silicon Sector Entry/Exit Command Sequences
The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon Sector command
sequence. The device continues to access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured
Silicon Sector command sequence.
See Command Definitions on page 63 [Secured Silicon Sector Command Table, Appendix
Table on page 64 through Table on page 68 for address and data requirements for both command sequences.
The Secured Silicon Sector Entry Command allows the following commands to be executed
 Read customer and factory Secured Silicon areas
 Program the customer Secured Silicon Sector
After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using
the addresses normally occupied by sector SA0 within the memory array. This mode of operation continues until the system issues
the Exit Secured Silicon Sector command sequence, or until power is removed from the device.
Software Functions and Sample Code
The following are C functions and source code examples of using the Secured Silicon Sector Entry, Program, and exit commands.
Refer to the Spansion Low Level Driver User’s Guide (available soon on www.spansion.com) for general information on Spansion
Flash memory software development guidelines.
Secured Silicon Sector Entry
(LLD Function = lld_SecSiSectorEntryCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Base + AAAh
Base + 555h
00AAh
Unlock Cycle 2
Write
Base + 555h
Base + 2AAh
0055h
Entry Cycle
Write
Base + AAAh
Base + 555h
0088h
Note
Base = Base Address.
/* Example: SecSi Sector
*( (UINT16 *)base_addr
*( (UINT16 *)base_addr
*( (UINT16 *)base_addr
Entry Command */
+ 0x555 ) = 0x00AA;
+ 0x2AA ) = 0x0055;
+ 0x555 ) = 0x0088;
Document Number: 002-00886 Rev. *A
/* write unlock cycle 1
/* write unlock cycle 2
/* write Secsi Sector Entry Cmd
*/
*/
*/
Page 46 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Secured Silicon Sector Program
(LLD Function = lld_ProgramCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Unlock Cycle 2
Write
Base + AAAh
Base + 555h
00AAh
Base + 555h
Base + 2AAh
0055h
Program Setup
Write
Base + AAAh
Base + 555h
00A0h
Program
Write
Word Address
Word Address
Data Word
Note
Base = Base Address.
/*
*(
*(
*(
*(
/*
Example: Program Command */
(UINT16 *)base_addr + 0x555 ) =
(UINT16 *)base_addr + 0x2AA ) =
(UINT16 *)base_addr + 0x555 ) =
(UINT16 *)pa ) = data; /* write
Poll for program completion */
0x00AA;
0x0055;
0x00A0;
data to
/*
/*
/*
be
write unlock cycle 1 */
write unlock cycle 2 */
write program setup command */
programmed */
Secured Silicon Sector Exit
(LLD Function = lld_SecSiSectorExitCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Unlock Cycle 2
Write
Base + AAAh
Base + 555h
00AAh
Base + 555h
Base + 2AAh
0055h
Exit Cycle 3
Write
Base + AAAh
Base + 555h
0090h
Exit Cycle 4
Write
Base + XXXh
Base + XXXh
0000h
Note
Base = Base Address.
/* Example: SecSi Sector
*( (UINT16 *)base_addr
*( (UINT16 *)base_addr
*( (UINT16 *)base_addr
*( (UINT16 *)base_addr
Exit Command */
+ 0x555 ) = 0x00AA;
+ 0x2AA ) = 0x0055;
+ 0x555 ) = 0x0090;
+ 0x000 ) = 0x0000;
Document Number: 002-00886 Rev. *A
/*
/*
/*
/*
write
write
write
write
unlock cycle
unlock cycle
SecSi Sector
SecSi Sector
1
2
Exit cycle 3
Exit cycle 4
*/
*/
*/
*/
Page 47 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
11. Electrical Specifications
11.1
Absolute Maximum Ratings
Description
Rating
Storage Temperature, Plastic Packages
–65°C to +150°C
Ambient Temperature with Power Applied
–65°C to +125°C
All Inputs and I/Os except as noted below
(Note 1)
–0.5 V to VCC + 0.5 V
VCC (Note 1)
Voltage with Respect to Ground
–0.5 V to +4.0 V
–0.5V to +4.0V
VIO
A9 and ACC (Note 2)
–0.5 V to +12.5 V
Output Short Circuit Current (Note 3)
200 mA
Notes
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may undershoot VSS to –2.0 V for periods of up to 20 ns. See Figure 11.1.
Maximum DC voltage on input or I/Os is VCC + 0.5 V. During voltage transitions inputs or I/Os may overshoot to VCC + 2.0 V for periods up to 20 ns. See Figure 11.2.
2. Minimum DC input voltage on pins A9 and ACC is -0.5V. During voltage transitions, A9 and ACC may overshoot VSS to –2.0 V for periods of up to 20 ns. See
Figure 11.1. Maximum DC voltage on pins A9 and ACC is +12.5 V, which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum
rating conditions for extended periods may affect device reliability.
Figure 11.1 Maximum Negative Overshoot Waveform
20 ns
20 ns
+0 .8 V
–0 .5 V
–2 .0 V
20 n s
Figure 11.2 Maximum Positive Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
+2.0 V
20 ns
Document Number: 002-00886 Rev. *A
20 ns
Page 48 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
11.2
Operating Ranges
Specifications
Range
Ambient Temperature (TA), Industrial (I) Device
–40°C to +85°C
Ambient Temperature (TA), Commercial (C) Device
0°C to +85°C
Supply Voltages
VCC
+2.7 V to 3.6 V or
+3.0 V to 3.6 V
VIO Supply Voltages
VIO
+1.65 V to VCC
Notes
1. Operating ranges define those limits between which the functionality of the device is guaranteed.
2. See also Ordering Information on page 4.
3. For valid VCC/VIO range combinations, see Ordering Information on page 4. The I/Os do not operate at 3 V when VIO = 1.8 V.
11.3
Test Conditions
Figure 11.3 Test Setup
Device
Under
Test
CL
Test Specifications
Test Condition
Output Load Capacitance, CL
(including jig capacitance)
Input Rise and Fall Times
All Speeds
Unit
30
pF
5
ns
Input Pulse Levels
0.0–VIO
V
Input timing measurement reference levels (See Note)
0.5VIO
V
Output timing measurement reference levels
0.5 VIO
V
Note
If VIO < VCC, the reference level is 0.5 VIO.
11.4
Key to Switching Waveforms
Waveform
Inputs
Outputs
Steady
Changing from H to L
Document Number: 002-00886 Rev. *A
Page 49 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Waveform
Inputs
Outputs
Changing from L to H
11.5
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
Switching Waveforms
Figure 11.4 Input Waveforms and Measurement Levels
VIO
0.0 V
Input
0.5 VIO
Measurement Level
0.5 VIO
Output
Note
If VIO < VCC, the input measurement reference level is 0.5 VIO.
Document Number: 002-00886 Rev. *A
Page 50 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
11.6
DC Characteristics
S29GL-P DC Characteristics (CMOS Compatible)
Parameter
Symbol
Parameter Description
(Notes)
Test Conditions
VIN = VSS to VCC
VCC = VCC max
ILI
Input Load Current
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC , VCC = VCC max
ICC1
VCC Active Read Current (1)
IIO2
VIO Non-Active Output
ICC2
VCC Intra-Page Read Current (1)
ICC3
ICC4
Min
Typ
Max
Unit
WP/ACC
±5.0
µA
Others
±2.0
35
µA
±1.0
µA
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 1 MHz
6
20
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 5 MHz
30
55
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 10 MHz
60
110
CE# = VIL, OE# = VIH
0.2
10
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 10 MHz
1
10
CE# = VIL, OE# = VIH, VCC = VCCmax, f = 33 MHz
5
20
VCC Active Erase/
Program Current (2, 3)
CE# = VIL, OE# = VIH, VCC = VCCmax
50
90
mA
VCC Standby Current
CE#, RESET# = VCC ± 0.3 V,
OE# = VIH, VCC = VCCmax
1
5
µA
250
500
µA
1
5
µA
WP#/ACC
pin
10
20
VCC pin
50
80
mA
mA
mA
VIL = VSS + 0.3 V/-0.1V,
ICC5
VCC Reset Current
ICC6
Automatic Sleep Mode (4)
IACC
ACC Accelerated
Program Current
VCC = VCCmax; VIL = VSS + 0.3 V/-0.1V,
RESET# = VSS ± 0.3 V
VCC = VCCmax, VIH = VCC ± 0.3 V,
VIL = VSS + 0.3 V/-0.1V, WP#/ACC = VIH
CE# = VIL, OE# = VIH,
VCC = VCCmax, WP#/ACC = VHH
mA
VIL
Input Low Voltage (5)
–0.1
0.3 x VIO
V
VIH
Input High Voltage (5)
0.7 x VIO
VIO + 0.3
V
VHH
Voltage for Program Acceleration VCC = 2.7 –3.6 V
11.5
12.5
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 2.7 –3.6 V
11.5
12.5
V
VOL
Output Low Voltage (5)
IOL = 100 µA
0.15 x VIO
V
VOH
Output High Voltage (5)
IOH = -100 µA
VLKO
Low VCC Lock-Out Voltage (3)
2.5
V
0.85 x VIO
2.3
V
Notes
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. ICC active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.
3. Not 100% tested.
4. Automatic sleep mode enables the lower power mode when addresses remain stable tor tACC + 30 ns.
5. VIO = 1.65–3.6 V
6. VCC = 3 V and VIO = 3V or 1.8V. When VIO is at 1.8V, I/O pins cannot operate at 3V.
Document Number: 002-00886 Rev. *A
Page 51 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
11.7
AC Characteristics
11.7.1
S29GL-P Read Operations
S29GL-P Read Operations
Parameter
JEDEC
Std.
Speed Options
Description
(Notes)
Test Setup
90
100
110
120
130
–
100
110
120
–
–
–
110
120
130
VIO = VCC = 3.0 V
90
100
110
–
–
VIO = VCC = 2.7 V
–
100
110
120
–
–
–
110
120
130
VIO = VCC = 3.0 V
90
100
110
–
–
VIO = VCC = 2.7 V
–
100
110
120
–
–
–
110
120
130
90
100
110
–
–
VIO = VCC = 2.7 V
tAVAV
tAVQV
tELQV
tRC
tACC
tCE
VIO = 1.65 V to VCC,
VCC = 3 V
Read Cycle Time
VIO = 1.65 V to VCC,
VCC = 3 V
Address to Output Delay (1)
Chip Enable to Output Delay (2)
VIO = 1.65 V to VCC,
VCC = 3 V
Min
Max
Max
VIO = VCC = 3.0 V
Unit
ns
ns
ns
Page Access Time
Max
25
ns
tGLQV
tOE
Output Enable to Output Delay
Max
25
ns
tPACC
tEHQZ
tDF
Chip Enable to Output High Z (3)
Max
20
ns
tGHQZ
tDF
Output Enable to Output High Z (3)
Max
20
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Min
0
ns
Output Enable Hold Time
(3)
Read
Min
0
ns
tOEH
Toggle and
Data# Polling
Min
10
ns
tCEH
Chip Enable Hold Time
Read
Min
35
ns
Notes
1. CE#, OE# = VIL
2. OE# = VIL
3. Not 100% tested.
4. See Figure 11.3 and Table for test specifications.
5. Unless otherwise indicated, AC specifications for 110 ns speed options are tested with VIO = VCC = 2.7 V. AC specifications for 110 ns speed options are tested with
VIO = 1.8 V and VCC = 3.0 V.
Document Number: 002-00886 Rev. *A
Page 52 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Figure 11.5 Read Operation Timings
tRC
Addresses Stable
Addresses
tACC
CE#
tCEH
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Note
For Figure 11.5, parameters tCEH and tOEH are specific to a read cycle following a flash write operation.
Figure 11.6 Page Read Timings
Same Page
Amax:A3
A2:A0
(See Note)
Aa
tACC
Data Bus
Ab
tPACC
Qa
Ad
Ac
tPACC
Qb
tPACC
Qc
Qd
CE#
OE#
Note
Figure 11.6 shows word mode. Addresses are A2:A-1 for byte mode.
Document Number: 002-00886 Rev. *A
Page 53 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
11.7.2
S29GL-P Hardware Reset (RESET#) Operation
Hardware Reset (RESET#)
Parameter
JEDEC
Std.
Description
Speed
Unit
tReady
RESET# Pin Low (During Embedded Algorithms) to
Read Mode or Write mode
Min
35
µs
tReady
RESET# Pin Low (NOT During Embedded Algorithms)
to Read Mode or Write mode
Min
35
µs
tRP
RESET# Pulse Width
Min
35
µs
tRH
Reset High Time Before Read
Min
200
ns
tRPD
RESET# Low to Standby Mode
Min
10
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Figure 11.7 Reset Timings
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Document Number: 002-00886 Rev. *A
Page 54 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Power-up Sequence Timings
Parameter
Description
Speed
Unit
Min
35
µs
Reset Low Time from rising edge of VIO (or last Reset pulse) to
rising edge of RESET#
Min
35
µs
Reset High Time before Read
Min
200
ns
tVCS
Reset Low Time from rising edge of VCC (or last Reset pulse) to
rising edge of RESET#
tVIOS
tRH
Notes
1. VIO < VCC + 200 mV.
2. VIO and VCC ramp must be synchronized during power up.
3. If RESET# is not stable for tVCS or tVIOS:
The device does not permit any read and write operations.
A valid read operation returns FFh.
A hardware reset is required.
4. VCC maximum power-up current (RST=VIL) is 20 mA.
Figure 11.8 Power-up Sequence Timings
VCC
VCC min
VIO
VIO min
tRH
CE#
RESET#
Document Number: 002-00886 Rev. *A
tVIOS
tVCS
Page 55 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
11.7.3
S29GL-P Erase and Program Operations
S29GL-P Erase and Program Operations
Parameter
Speed Options
JEDEC
Std.
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
tDS
Data Setup Time
Min
30
ns
tDH
tWLAX
tDVWH
tWHDX
tELWL
90
100
110
120
130
Unit
90
100
110
120
130
ns
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
Write Buffer Program Operation (Notes 2, 3)
Typ
480
µs
tWHWH1
tWHWH2
tWHWH1
Effective Write Buffer Program Operation (Notes 2, 4)
Per Word
Typ
15
µs
Accelerated Effective Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
13.5
µs
Program Operation (Note 2)
Word
Typ
60
µs
Accelerated Programming Operation (Note 2)
Word
Typ
54
µs
tWHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
35
µs
tBUSY
Erase/Program Valid to RY/BY# Delay
Max
90
ns
tSEA
Sector Erase Timeout
Max
50
µs
Notes
1. Not 100% tested.
2. See Section 11.6 for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 110 ns speed option are tested with
VIO = VCC = 2.7 V. AC specifications for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
Document Number: 002-00886 Rev. *A
Page 56 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Figure 11.9 Program Operation Timings
Program Command Sequence (last two cycles)
tAS
tWC
555h
Addresses
Read Status Data (last two cycles)
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
A0h
Data
PD
Status
tBUSY
DOUT
tRB
RY/BY#
VCC
tVCS
Notes
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 11.10 Accelerated Program Timing Diagram
VHH
ACC
VIL or VIH
VIL or VIH
tVHH
tVHH
Notes
1. Not 100% tested.
2. CE#, OE# = VIL
3. OE# = VIL
4. See Figure 11.3 and Table for test specifications.
Document Number: 002-00886 Rev. *A
Page 57 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Figure 11.11 Chip/Sector Erase Operation Timings
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 31.)
2. These waveforms are for the word mode
Figure 11.12 Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
Status Data
Status Data
True
Valid Data
High Z
DQ6–DQ0
True
Valid Data
tBUSY
RY/BY#
Notes
1. VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
Document Number: 002-00886 Rev. *A
Page 58 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
2. tOE for data polling is 45 ns when VIO = 1.65 to 2.7 V and is 35 ns when VIO = 2.7 to 3.6 V
3. CE# does not need to go high between status bit reads
Figure 11.13 Toggle Bit Timings (During Embedded Algorithms)
tAHT
tAS
Addresses
tAHT
tASO
CE#
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ2 and DQ6
tOE
Valid Data
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
RY/BY#
Note
A = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle CE# does not
need to go high between status bit reads
Figure 11.14 DQ2 vs. DQ6
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Suspend
Program
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note
DQ2 toggles only when read at an address within an erase-suspended sector. The system can use OE# or CE# to toggle DQ2 and DQ6.
Document Number: 002-00886 Rev. *A
Page 59 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
11.7.4
S29GL-P Alternate CE# Controlled Erase and Program Operations
S29GL-P Alternate CE# Controlled Erase and Program Operations
Parameter
Speed Options
JEDEC
Std.
Description
(Notes)
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
tDS
Data Setup Time
Min
30
ns
tDH
tELAX
tDVEH
90
100
110
120
130
Unit
90
100
110
120
130
ns
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
OE# High during toggle bit polling
Min
20
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to CE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
480
µs
tEHDX
tWHWH2
tWHWH2
Effective Write Buffer Program Operation (Notes 2, 4)
Per Word
Typ
15
µs
Effective Accelerated Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
13.5
µs
Program Operation (Note 2)
Word
Typ
60
µs
Accelerated Programming Operation (Note 2)
Word
Typ
54
µs
Typ
0.5
sec
Sector Erase Operation (Note 2)
Notes
1. Not 100% tested.
2. See DC Characteristics on page 51 for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications are tested with VIO = 1.8 V and VCC = 3.0 V.
Document Number: 002-00886 Rev. *A
Page 60 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Figure 11.15 Alternate CE# Controlled Write (Erase/Program) Operation Timings
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes
1. Figure 11.15 indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
Document Number: 002-00886 Rev. *A
Page 61 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
11.7.5
Erase And Programming Performance
Erase And Programming Performance
Typ
(Note 1)
Parameter
Sector Erase Time
Chip Erase Time
Max
(Note 2)
Unit
sec
0.5
3.5
S29GL128P
64
256
S29GL256P
128
512
S29GL512P
256
1024
512
2048
S29GL01GP
sec
Total Write Buffer Time (Note 3)
480
µs
Total Accelerated Write Buffer Programming Time
(Note 3)
432
µs
Chip Program Time
S29GL128P
123
S29GL256P
246
S29GL512P
492
S29GL01GP
984
Comments
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
sec
Notes
1. Typical program and erase times assume the following conditions: 25°C, 3.6 V VCC, 10,000 cycles, checkerboard pattern.
2. Under worst case conditions of -40°C, VCC = 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 32-word write buffer operation.
4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables –.
11.7.6
TSOP Pin and BGA Package Capacitance
Package Capacitance
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
10
pF
COUT
Output Capacitance
VOUT = 0
10
12
pF
CIN2
Control Pin Capacitance
VIN = 0
8
10
pF
WP#/ACC
Separated Control Pin
VIN = 0
42
45
pF
RESET#
Separated Control Pin
VIN = 0
25
28
pF
CE#
Separated Control Pin
VIN = 0
22
25
pF
Notes
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 100 MHz.
Document Number: 002-00886 Rev. *A
Page 62 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
12. Appendix
This section contains information relating to software control or interfacing with the Flash device. For additional information and
assistance regarding software, see Section 5. For the latest information, explore the Spansion web site at www.spansion.com.
12.1
Command Definitions
Writing specific address and data commands or sequences into the command register initiates device operations. Tables – define
the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence can
place the device in an unknown state. A reset command is then required to return the device to reading array data.
Document Number: 002-00886 Rev. *A
Page 63 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Command (Notes)
Cycles
S29GL-P Memory Array Command Definitions, x16
Bus Cycles (Notes 1–5)
First
Second
Addr
Data
RD
Addr
Data
Third
Addr
Fourth
Data
Addr
Fifth
Data
1
RA
Reset (7)
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
01
Device ID (8)
6
555
AA
2AA
55
555
90
X01
227E
Sector Protect Verify (10)
4
555
AA
2AA
55
555
90
[SA]X02
(10)
Secure Device Verify (11)
4
555
AA
2AA
55
555
90
X03
(11)
Autoselect (8,9)
Read (6)
Sixth
Addr
Data
Addr
Data
X0E
(8)
X0F
(8)
CFI Query (12)
1
55
98
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer (13)
6
555
AA
2AA
55
SA
25
SA
WC
WBL
PD
WBL
PD
1
SA
29
Write-to-Buffer-Abort Reset (14)
3
555
AA
2AA
55
555
F0
Enter
3
555
AA
2AA
55
555
20
Program (15)
2
XXX
A0
PA
PD
Unlock Bypass
Program Buffer to Flash (Confirm)
Sector Erase (15)
2
XXX
80
SA
30
Chip Erase (15)
2
XXX
80
XXX
10
Reset (16)
2
XXX
90
XXX
00
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
2AA
55
555
80
555
AA
2AA
55
SA
30
XX
00
Chip Erase
Sector Erase
6
555
AA
Erase Suspend/Program Suspend (17)
1
XXX
B0
Erase Resume/Program Resume (18)
1
XXX
30
Secured Silicon Sector Entry
3
555
AA
2AA
55
555
88
Secured Silicon Sector Exit (19)
4
555
AA
2AA
55
555
90
Document Number: 002-00886 Rev. *A
Page 64 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Legend
X = Don’t care
RA = Address of the memory to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on
the falling edge of the WE# or CE# pulse, whichever happens later.
Notes
1. See Table on page 14 for description of bus operations.
2. All values are in hexadecimal.
3. All bus cycles are write cycles unless otherwise noted.
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.
5. Address bits AMAX:A16 are don’t cares for unlock and command cycles,
unless SA or PA required. (AMAX is the Highest Address pin.).
6. No unlock or command cycles required when reading array data.
7. The Reset command is required to return to reading array data when
device is in the autoselect mode, or if DQ5 goes high (while the device is
providing status data).
8. See Table on page 17 for device ID values and definitions.
9. The fourth, fifth, and sixth cycles of the autoselect command sequence are
read cycles.
10. The data is 00h for an unprotected sector and 01h for a protected sector.
See Autoselect on page 16 for more information. This is same as PPB
Status Read except that the protect and unprotect statuses are inverted
here.
11. The data value for DQ7 is “1” for a serialized, protected Secured Silicon
Sector region and “0” for an unserialized, unprotected region. See Table
on page 17 for data and definitions.
Document Number: 002-00886 Rev. *A
PD = Data to be programmed at location PA. Data latches on the rising edge
of the WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased.
Address bits Amax–A16 uniquely select any sector.
WBL = Write Buffer Location. The address must be within the same write
buffer page as PA.
WC = Word Count is the number of write buffer locations to load minus 1.
12. Command is valid when device is ready to read array data or when device
is in autoselect mode.
13. Depending on the number of words written, the total number of cycles may
be from 6 to 37.
14. Command sequence returns device to reading array after being placed in
a Write-to-Buffer-Abort state. Full command sequence is required if
resetting out of abort while in Unlock Bypass mode.
15. The Unlock-Bypass command is required prior to the Unlock-BypassProgram command.
16. The Unlock-Bypass-Reset command is required to return to reading array
data when the device is in the unlock bypass mode.
17. The system can read and program/program suspend in non-erasing
sectors, or enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
18. The Erase Resume/Program Resume command is valid only during the
Erase Suspend/Program Suspend modes.
19. The Exit command returns the device to reading the array.
Page 65 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Bus Cycles (Notes 1–5)
First/Seventh
Addr
Data
Second
Addr
Third
Addr
Data
555
40
555
60
Command Set Entry
3
555
AA
2AA
55
Program (6)
2
XXX
A0
XXX
DATA
XXX
00
Read (6)
1
00
RD
Command Set Exit (7, 8)
2
XXX
90
Addr
Data
Command Set Entry
3
555
AA
2AA
55
Password Program (9)
2
XXX
A0
PWA x
PWD x
Password Read (10)
4
00
PWD0
01
PWD 1
02
PWD 2
03
PWD 3
00
25
00
03
00
PWD 0
01
PWD 1
555
C0
555
50
555
E0
7
00
29
Command Set Exit (7, 8)
2
XXX
90
XXX
00
PPB Command Set Entry
3
555
AA
2AA
55
2
XXX
A0
SA
00
All PPB Erase (13)
2
XXX
80
00
30
PPB Status Read (12)
1
SA
RD (0)
Global
Non-Volatile
Password Unlock (10)
PPB Program (11, 12)
PPB Command Set Exit (7, 8)
2
XXX
90
XXX
00
PPB Lock Command Set Entry
3
555
AA
2AA
55
PPB Lock Set (12)
2
XXX
A0
XXX
00
PPB Lock Status Read (12)
1
XXX
RD (0)
PPB Lock Command Set Exit (7, 8)
2
XXX
90
XXX
00
Volatile
Fourth
Data
Global
Volatile Freeze
Password
Protection
Lock
Register
Command (Notes)
Cycles
S29GL-P Sector Protection Command Definitions, x16
DYB Command Set Entry
3
555
AA
2AA
55
DYB Set (11, 12)
2
XXX
A0
SA
00
DYB Clear (12)
2
XXX
A0
SA
01
DYB Status Read (12)
1
SA
RD (0)
DYB Command Set Exit (7, 8)
2
XXX
90
XXX
00
Fifth
Sixth
Addr
Data
Addr
Data
02
PWD 2
03
PWD 3
Legend
X = Don’t care
RD(0) = Read data.
SA = Sector Address. Address bits Amax–A16 uniquely select any sector.
PWD = Password
PWDx = Password word0, word1, word2, and word3.
Data = Lock Register Contents: PD(0) = Secured Silicon Sector Protection Bit,
PD(1) = Persistent Protection Mode Lock Bit, PD(2) = Password Protection
Mode Lock Bit.
Notes
1. See Table on page 14 for description of bus operations.
7. The Exit command returns the device to reading the array.
2. All values are in hexadecimal.
3. All bus cycles are write cycles unless otherwise noted.
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.
5. Address bits AMAX:A16 are don’t cares for unlock and command cycles,
unless SA or PA required. (AMAX is the Highest Address pin.)
6. All Lock Register bits are one-time programmable. Program state = “0”
and the erase state = “1.” The Persistent Protection Mode Lock Bit and the
Password Protection Mode Lock Bit cannot be programmed at the same
time or the Lock Register Bits Program operation aborts and returns the
device to read mode. Lock Register bits that are reserved for future use
default to “1’s.” The Lock Register is shipped out as “FFFF’s” before Lock
Register Bit program execution.
Document Number: 002-00886 Rev. *A
8. If any Command Set Entry command was written, an Exit command must
be issued to reset the device into read mode.
9. For PWDx, only one portion of the password can be programmed per each
“A0” command.
10. Note that the password portion can be entered or read in any order as long
as the entire 64-bit password is entered or read.
11. If ACC = VHH, sector protection matches when ACC = VIH.
12. Protected State = “00h,” Unprotected State = “01h.”
13. The All PPB Erase command embeds programming of all PPB bits before
erasure.
Page 66 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Command (Notes)
Cycles
S29GL-P Memory Array Command Definitions, x8
Bus Cycles (Notes 1–5)
First
Second
Addr
Data
RD
Addr
Data
Third
Addr
Fourth
Data
Addr
Fifth
Data
1
RA
Reset (7)
1
XXX
F0
Manufacturer ID
4
AAA
AA
555
55
AAA
90
X00
01
Device ID (8)
6
AAA
AA
555
55
AAA
90
X02
XX7E
Sector Protect Verify (10)
4
AAA
AA
555
55
AAA
90
[SA]X04
(10)
Secure Device Verify (11)
4
AAA
AA
555
55
AAA
90
X06
(11)
Autoselect (8,9)
Read (6)
Sixth
Addr
Data
Addr
Data
X1C
(8)
X1E
(8)
CFI Query (12)
1
AA
98
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Write to Buffer (13)
6
AAA
AA
555
55
SA
25
SA
WC
WBL
PD
WBL
PD
1
SA
29
Write-to-Buffer-Abort Reset (14)
3
AAA
AA
555
55
AAA
F0
Enter
3
AAA
AA
555
55
AAA
20
Program (15)
2
XXX
A0
PA
PD
Sector Erase (15)
2
XXX
80
SA
30
Chip Erase (15)
2
XXX
80
XXX
10
Reset (16)
2
XXX
90
XXX
00
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
555
55
AAA
80
AAA
AA
555
55
SA
30
XX
00
Unlock Bypass
Program Buffer to Flash (confirm)
Chip Erase
Sector Erase
6
AAA
AA
Erase Suspend/Program Suspend (17)
1
XXX
B0
Erase Resume/Program Resume (18)
1
XXX
30
Secured Silicon Sector Entry
3
AAA
AA
555
55
AAA
88
Secured Silicon Sector Exit (19)
4
AAA
AA
555
55
AAA
90
Document Number: 002-00886 Rev. *A
Page 67 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Legend
X = Don’t care
RA = Address of the memory to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on
the falling edge of the WE# or CE# pulse, whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge
of the WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased.
Address bits Amax–A16 uniquely select any sector.
WBL = Write Buffer Location. The address must be within the same write
buffer page as PA.
WC = Word Count is the number of write buffer locations to load minus 1.
Notes
1. See Table on page 14 for description of bus operations.
12. Command is valid when device is ready to read array data or when device
is in autoselect mode.
2. All values are in hexadecimal.
13. Depending on the number of words written, the total number of cycles may
be from 6 to 69.
3. All bus cycles are write cycles unless otherwise noted.
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.
14. Command sequence returns device to reading array after being placed in
a Write-to-Buffer-Abort state. Full command sequence is required if
resetting out of abort while in Unlock Bypass mode.
5. Address bits AMAX:A16 are don’t cares for unlock and command cycles,
unless SA or PA required. (AMAX is the Highest Address pin.).
6. No unlock or command cycles required when reading array data.
15. The Unlock-Bypass command is required prior to the Unlock-BypassProgram command.
7. The Reset command is required to return to reading array data when
device is in the autoselect mode, or if DQ5 goes high (while the device is
providing status data).
16. The Unlock-Bypass-Reset command is required to return to reading array
data when the device is in the unlock bypass mode.
8. See Table on page 17 for device ID values and definitions.
17. The system can read and program/program suspend in non-erasing
sectors, or enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
9. The fourth, fifth, and sixth cycles of the autoselect command sequence are
read cycles.
10. The data is 00h for an unprotected sector and 01h for a protected sector.
See Autoselect on page 16 for more information. This is same as PPB
Status Read except that the protect and unprotect statuses are inverted
here.
18. The Erase Resume/Program Resume command is valid only during the
Erase Suspend/Program Suspend modes.
19. The Exit command returns the device to reading the array.
11. The data value for DQ7 is “1” for a serialized, protected Secured Silicon
Sector region and “0” for an unserialized, unprotected region. See Table
on page 17 for data and definitions.
Global
Non-Volatile
Password Protection
Lock Register
Command (Notes)
Cycles
S29GL-P Sector Protection Command Definitions, x8
Bus Cycles (Notes 1–5)
First/Seventh
Second/Eighth
Addr
Data
Addr
Third
Fourth
Data
Addr
Data
AAA
40
AAA
60
02
Command Set Entry
3
AAA
AA
555
55
Bits Program (6)
2
XXX
A0
XXX
DATA
XXX
00
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
PWD 2
03
PWD
3
04
PWD 4
05
PWD 5
03
PWD 3
Read (6)
1
00
RD
Command Set Exit (7, 8)
2
XXX
90
Command Set Entry
3
AAA
AA
555
55
Password Program (9)
2
XXX
A0
PWA x
PWD x
Password Read (10)
8
00
PWD0
01
PWD 1
06
PWD 6
07
PWD 7
00
25
00
03
00
PWD 0
01
PWD
1
02
PWD 2
04
PWD 4
05
PWD 5
06
PWD 6
07
PWD
7
00
29
00
AAA
C0
Password Unlock (10)
11
Command Set Exit (7, 8)
2
XXX
90
XXX
PPB Command Set Entry
3
AAA
AA
55
55
PPB Program (11, 12)
2
XXX
A0
SA
00
All PPB Erase (13)
2
XXX
80
00
30
XXX
00
PPB Status Read (12)
1
SA
RD(0)
PPB Command Set Exit (7, 8)
2
XXX
90
Document Number: 002-00886 Rev. *A
Page 68 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Volatile
Global
Volatile Freeze
S29GL-P Sector Protection Command Definitions, x8
PPB Lock Command Set Entry
3
AAA
AA
555
55
PPB Lock Bit Set (12)
2
XXX
A0
XXX
00
PPB Lock Status Read (12)
1
XXX
RD(0)
PPB Lock Command Set Exit (7, 8)
2
XXX
90
XXX
00
DYB Command Set Entry
3
AAA
AA
555
55
DYB Set (11, 12)
2
XXX
A0
SA
00
SA
01
XXX
00
DYB Clear (12)
2
XXX
A0
DYB Status Read (12)
1
SA
RD(0)
DYB Command Set Exit (7, 8)
2
XXX
90
AAA
50
AAA
E0
Legend
X = Don’t care
RD(0) = Read data.
SA = Sector Address. Address bits Amax–A16 uniquely select any sector.
PWD = Password
PWDx = Password word0, word1, word2, and word3.
Data = Lock Register Contents: PD(0) = Secured Silicon Sector Protection Bit,
PD(1) = Persistent Protection Mode Lock Bit, PD(2) = Password Protection
Mode Lock Bit.
Notes
1. See Table on page 14 for description of bus operations.
7. The Exit command returns the device to reading the array.
2. All values are in hexadecimal.
8. If any Command Set Entry command was written, an Exit command must
be issued to reset the device into read mode.
3. All bus cycles are write cycles unless otherwise noted.
4. Data bits DQ15-DQ8 are don’t cares for unlock and command cycles.
5. Address bits AMAX:A16 are don’t cares for unlock and command cycles,
unless SA or PA required. (AMAX is the Highest Address pin.)
6. All Lock Register bits are one-time programmable. Program state = “0”
and the erase state = “1.” The Persistent Protection Mode Lock Bit and the
Password Protection Mode Lock Bit cannot be programmed at the same
time or the Lock Register Bits Program operation aborts and returns the
device to read mode. Lock Register bits that are reserved for future use
default to “1’s.” The Lock Register is shipped out as “FFFF’s” before Lock
Register Bit program execution.
12.2
9. For PWDx, only one portion of the password can be programmed per each
“A0” command.
10. Note that the password portion can be entered or read in any order as long
as the entire 64-bit password is entered or read.
11. If ACC = VHH, sector protection matches when ACC = VIH.
12. Protected State = “00h,” Unprotected State = “01h.”
13. The All PPB Erase command embeds programming of all PPB bits before
erasure.
Common Flash Memory Interface
The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows
specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be deviceindependent, JEDEC ID-independent, and forward- and back-ward-compatible for the specified flash device families. Flash vendors
can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h any time the device
is ready to read array data. The system can read CFI information at the addresses given in Tables –). All reads outside of the CFI
address range, returns non-valid data. Reads from other sectors are allowed, writes are not. To terminate reading CFI data, the
system must write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query
mode, and the system can read CFI data at the addresses given in Tables –. The system must write the reset command to return the
device to reading array data.
The following is a C source code example of using the CFI Entry and Exit functions. Refer to the Spansion Low Level Driver User’s
Guide (available on www.spansion.com) for general information on Spansion Flash memory software development guidelines.
/* Example: CFI Entry command */
*( (UINT16 *)base_addr + 0x55 ) = 0x0098;
/* Example: CFI Exit command */
*( (UINT16 *)base_addr + 0x000 ) = 0x00F0;
/* write CFI entry command
/* write cfi exit command
*/
*/
For further information, please refer to the CFI Specification (see JEDEC publications JEP137-A and JESD68.01and CFI Publication
100). Please contact your sales office for copies of these documents.
Document Number: 002-00886 Rev. *A
Page 69 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
CFI Query Identification String
Addresses
(x16)
Addresses
(x8)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Description
System Interface String
Addresses (x16)
Addresses (x8)
Data
1Bh
36h
0027h
VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 mV
Description
1Ch
38h
0036h
VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 mV
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0006h
Typical timeout per single byte/word write 2N µs
20h
40h
0006h
Typical timeout for buffer write 2N µs (00h = not supported)
21h
42h
0009h
Typical timeout per individual block erase 2N ms
0013h = 1 Gb
22h
44h
0012h = 512 Mb
0011h = 256 Mb
Typical timeout for full chip erase 2N ms (00h = not supported)
0010h = 128 Mb
23h
46h
0003h
Max. timeout for byte/word write 2N times typical
24h
48h
0005h
Max. timeout for buffer write 2N times typical
25h
4Ah
0003h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0002h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Document Number: 002-00886 Rev. *A
Page 70 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Device Geometry Definition
Addresses (x16)
Addresses (x8)
Data
27h
4Eh
001Bh
001Ah
0019h
0018h
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0006h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0001h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
00xxh
000xh
0000h
000xh
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
00FFh, 0003h, 0000h, 0002h =1 Gb
00FFh, 0001h, 0000h, 0002h = 512 Mb
00FFh, 0000h, 0000h, 0002h = 256 Mb
007Fh, 0000h, 0000h, 0002h = 128 Mb
31h
32h
33h
34h
62h
64h
66h
68h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
Document Number: 002-00886 Rev. *A
Description
Device Size = 2N byte
1B = 1 Gb, 1A= 512 Mb, 19 = 256 Mb, 18 = 128 Mb
Page 71 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Primary Vendor-Specific Extended Query
Addresses (x16)
Addresses (x8)
Data
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Description
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0033h
Minor version number, ASCII
45h
8Ah
0014h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Process Technology (Bits 7-2) 0101b = 90 nm MirrorBit
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0000h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0008h
Sector Protect/Unprotect scheme
0008h = Advanced Sector Protection
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported, X = Number of Sectors
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0002h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
00B5h
4Eh
9Ch
00C5h
4Fh
9Eh
00xxh
50h
A0h
0001h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
WP# Protection
Document Number: 002-00886 Rev. *A
04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top WP#
protect
Program Suspend
00h = Not Supported, 01h = Supported
Page 72 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
13. Advance Information on S29GL-S Eclipse 65 nm MirrorBit
Power-On and Warm Reset Timing
At power on, the flash requires additional time in the reset state to self configure than it does during a warm reset. Table and
Figure 13.1 and Figure 13.2 detail the power on and warm reset timing requirements for the GL-P, and GL-S flash.
Power On and Warm Reset Timing Requirements
Parameter
Description
Type
GL-P
GL-S
Power on Reset
tVCS
VCC Setup Time to first access
min
35 µs
300 µs
tVIOS
VIO Setup Time to first access
min
35 µs
300 µs
tRPH
RESET# Low to CE# Low
min
35 µs
35 µs
tRP
RESET# Low to RESET# High
min
35 µs
200 ns (2)
tRH
RESET# High to CE# Low
min
200 ns
50 ns (2)
tCEH
CE# High to CE# Low
min
N/A
20 ns
Warm Reset
tRPH
RESET# Low to CE# Low
min
35 µs
35 µs
tRP
RESET# Low to RESET# High
min
35 µs
200 ns (2)
tRH
RESET# High to CE# Low
min
200 ns
50 ns (2)
tCEH
CE# High to CE# Low
min
N/A
20 ns
Notes:
1. N/A = Not Applicable.
2. For GL-S, tRP + tRH must not be less than tRPH.
Figure 13.1 Power-Up Reset Timing
Note:
The sum of tRP and tRH must be equal to or greater than tRPH.
Document Number: 002-00886 Rev. *A
Page 73 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Figure 13.2 Warm Reset Timing
Note:
The sum of tRP and tRH must be equal to or greater than tRPH.
The differences in power-on timing should not present a migration challenge for most applications where the flash interfaces directly
with a Host that requires oscillator and PLL lock prior to initiating the first boot read access to the flash. In applications which may
access the flash within 300 µs of power application, some circuit modification will be required to accommodate migration to GL-S
flash.
To initiate the first read or write cycle after power on, the GL-S requires CE# or OE# to transition from High to Low no sooner than
tVCS after VCC exceeds VCC_min and VIO exceeds VIO_min. CE# or OE# must be High at least tCEH = 20 ns prior to CE# or OE# falling
edge which initiates the first access.
CE# is ignored during Warm Reset; however, to initiate the first read or write cycle after warm reset, the GL-S requires CE# to
transition from High to Low no sooner than tRH after RESET# transitions from Low to High. CE# must be high at least tCEH = 20 ns
prior to CE# falling edge, which initiates first access. These were not requirements for the GL-P so designs that have CE# fixed low
cannot migrate to GL-S without modification to enable active CE# control.
The GL-S allows VIO to ramp concurrently with or after VCC with no restriction on time or voltage differential. During power ramp no
input is allowed to exceed VIO. The GL-S data sheet provides enhanced direction on power management and control to design a
robust and reliable system.
Document Number: 002-00886 Rev. *A
Page 74 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
14. Revision History
Spansion Publication Number: S29GL-P_00
Section
Description
Revision A0 (October 29, 2004)
Initial Release.
Revision A1 (October 20, 2005)
Global
Revised all sections of document.
Revision A2 (October 19, 2006)
Global
Revised all sections of document. Reformatted document to new template. Changed speed options
for S29GL01GP.
Revision A3 (November 21, 2006)
AC Characteristics
Erase and Program Operations table: Changed tBUSY to a maximum specification.
Revision A4 (December 18, 2006)
Global
Changed tACC, tCE specifications on 128 Mb, 256 Mb, and 512 Mb devices. Added 90 and 100 ns
speed options.
Write Buffer Programming, Sector Erase
Write Buffer Programming Operation, Sector Erase Operation figures: Deleted “Wait 4 ms” box from
flowcharts.
Password Protection Method
Lock Register Program Algorithm figure: Deleted “Wait 4 ms” box from flowchart.
Read-only Operations table
Modified tRC, tACC, tCE, tOE specifications.
Program and Erase Operations tables
Changed tDS specification, deleted write cycle time note.
TSOP Pin and BGA Capacitance table
Changed all specifications in table.
Revision A5 (May 18, 2007)
Global
Changed data sheet status to Preliminary.
Deleted references to requirement for external WP# pull-up.
Performance Characteristics
Max. Read Access Times table: Added note.
Hardware Reset
Deleted note from section.
AC Characteristics
Reset Timings figure: Deleted note.
Command Definitions tables
S29GL-P Sector Protection Command Definitions tables: Changed “Global Non-Volatile Freeze” to
“Global Volatile Freeze”.
DC Characteristics
CMOS Compatible table: Changed ICC1 maximum current for 5 MHz and MHz test conditions.
Page Read Timings figure
Corrected address range for top waveform.
Revision A6 (October 23, 2007)
Performance Characteristics
Changed speed options for S29GL512P
Ordering Information
Corrected samples OPN valid combinations; changed speed options for S29GL512P
64-Ball Fortified BGA
Clarified ball “D1” connection
56-Pin TSOP
Clarified pin “30” connection
Autoselect
Added recommendation statement
Accelerated Program
Added recommendation statement
Persistent Protection Bits
Removed “Erase” from title and flow chart
Secured Silicon Sector
Sections “Factory Locked Secured Silicon Sector” & “Customer Lockable Secured Silicon Sector”:
clarified shipping options
Power-up Sequence Timing
Changed tRH from “Max” to “Min” value
Advance Information on S29GL-R 65 nm
MirrorBit Hardware Reset (RESET#) and
Power-up Sequence
Added section
Global
Fixed cross-references that were not live hyperlinks.
Revision A7 (November 8, 2007)
Advance Information on S29GL-R 65 nm
MirrorBit Hardware Reset (RESET#) and
Power-up Sequence
Document Number: 002-00886 Rev. *A
Changed timing specs and waveforms
Page 75 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Section
Description
Revision A8 (November 28, 2007)
Ordering Information
New commercial operating temperature option
Operating Ranges
New operating temperature range
Revision A9 (February 15, 2008)
Electrical Specification
Modified Test Conditions
Erase and Programming Performance
Chip Program Time: removed comment
Sector Protection Command Definition, x16
Table
Corrected Lock Register “Read” address
Advance Information on S29GL-R 65 nm
MirrorBit Hardware Reset (RESET#) and
Power-up Sequence
Power-Up Sequence Timings Table: modified Note 2 - reduced timing from 500 µs to 300 µs
Revision A10 (March 19, 2008)
Global
Changed document status to Full Production.
DC Characteristics
Changed Max values for Input Load Current (ILI)
Sector Protection Command Definitions
(x16 & x8 tables)
Changed Lock Register Read command from “DATA” to “RD”
Revision A11 (June 11, 2008)
Ordering Information
Revised Commercial temperature range
Figure: Write Operation Status Flowchart
Updated flowchart
Revision A12 (November 20, 2009)
Table Input/Output Descriptions
Removed RFU description
Figure 64-ball Fortified Ball Grid Array
Changed all RFU pins to NC pins
Figure 56-pin Standard TSOP (Top View)
Changed all RFU pins to NC pins
Table Autoselect Exit
Changed cycle description to Auto Select Exit Command
Table Chip Erase
Changed address of last C source code command from 0x000h to 0x555h
Erase Suspend/Erase Resume
Changed first paragraph, second sentence to sector address is “don't care” for Erase Suspend
Changed sixth paragraph, second sentence to sector address is “don't care” for Erase Suspend
Tables
Program Suspend
Program Resume
Unlock Bypass Entry
Added Byte Address to tables
Unlock Bypass Program
Unlock Bypass Reset
Unlock Bypass
Third paragraph, first sentence added unlock bypass Sector Erase and unlock bypass Chip Erase as
valid commands
Changed paragraph, third sentence to sector address of exit command is “don't care”.
Writing Commands/Command Sequence
Changed tables listed in fourth sentence to Table 6.1-6.4
WP#/ACC Method
Changed table listed in Note section to 11.2.
Secured Silicon Sector Entry/Exit Command
Added source code for program under Table 10.3
Sequence
Table Secured Silicon Sector Exit
Changed Byte and Word addresses of Exit Cycle to “XXXh”
Figure Test Setup
Changed test setup to show only a load of CL
Table Test Specification
Removed Output Load Test Condition
Table S29GL-P Erase and Program
Operations
Removed tGHWL
Changed description of tGHEL to (OE# High to CE# Low)
Table S29GL-P Alternate CE# Controlled
Erase and Program Operations
Change Note 2 to “DC Characteristics”
TSOP Pin and BGA Package Capacitance
Changed RESET# values.
Document Number: 002-00886 Rev. *A
Page 76 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Section
Description
Changed number of cycles for Device ID to 6
Table S29GL-P Memory Array Command
Definitions, x16
Changed number of cycles for Write Buffer to 6
Added note regarding the number of cycles in a Write Buffer command
Changed number of cycles for Device ID to 6
Table S29GL-P Memory Array Command
Definitions, x8
Changed number of cycles for Write Buffer to 6
Added note regarding the number of cycles in a Write Buffer command
Table System Interface String
Changed value of address 20h (x16) to 0009h and description to
“Typical timeout for buffer write 2n µs”
Table Device Geometry Definition
For address 31h (x16) corrected x8 address
Added values of 128 Mb-512 Mb densities to address 22h (x16)
Revision A13 (November 17, 2010)
Performance Characteristics
Updated access time options for S29GL512P
Ordering Information
Updated speed options for S29GL512P
Read Operation Timing Figure
Added note
Revision A14 (October 22, 2012)
Sector Erase
Clarified tSEA
Erase Suspend
Clarified tSEA
Writing Commands/Command Sequences
Sub-section RY/BY#: Clarified last sentence
Figure Advanced Sector Protection/
Unprotection
Corrected Note numbering
Table S29GL-P Memory Array Command
Definitions, x8
Corrected Address for 3rd Cycle of Write-To-Buffer-Abort Reset command
Table System Interface String
Changed value of address 20h (x16) to 0006h
Advance Information on S29GL-R 65 nm
MirrorBit Hardware Reset (RESET#) and
Power-up Sequence
Updated section title to Advance Information on S29GL-S Eclipse 65 nm MirrorBit Power-On and
Warm Reset Timing
Updated section to cover GL-S Power-On and Warm Reset Timing
Document History Page
Document Title:S29GL01GP, S29GL512P, S29GL256P, S29GL128P
1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash with 90 nm MirrorBit Process Technology
Document Number: 002-00886
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
-
RYSU
10/29/2004 A0:Initial release
**
-
RYSU
10/20/2005 A1:Global Revised all sections of document.
**
-
RYSU
10/19/2006 A2:Global
Revised all sections of document. Reformatted document to new template.
Changed speed options
for S29GL01GP
**
-
RYSU
11/21/2006 A3:AC Characteristics Erase and Program Operations table: Changed tBUSY
to a maximum specification.
Document Number: 002-00886 Rev. *A
Description of Change
Page 77 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Document History Page (Continued)
Document Title:S29GL01GP, S29GL512P, S29GL256P, S29GL128P
1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash with 90 nm MirrorBit Process Technology
Document Number: 002-00886
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
-
RYSU
12/18/2006 A4:Global
Changed tACC, tCE specifications on 128 Mb, 256 Mb, and 512 Mb
devices. Added 90 and 100 ns
speed options.
Write Buffer Programming, Sector Erase
Write Buffer Programming Operation, Sector Erase Operation figures:
Deleted “Wait 4 ms” box from
flowcharts.
Password Protection Method Lock Register Program Algorithm figure:
Deleted “Wait 4 ms” box from flowchart.
Read-only Operations table Modified tRC, tACC, tCE, tOE specifications.
Program and Erase Operations tables Changed tDS specification,
deleted write cycle time note.
TSOP Pin and BGA Capacitance table Changed all specifications in table.
**
-
RYSU
05/18/2007 A5:Global
Changed data sheet status to Preliminary.
Deleted references to requirement for external WP# pull-up.
Performance Characteristics Max. Read Access Times table: Added
note.
Hardware Reset Deleted note from section.
AC Characteristics Reset Timings figure: Deleted note.
Command Definitions tables
S29GL-P Sector Protection Command Definitions tables: Changed “Global
Non-Volatile Freeze” to “Global Volatile Freeze”.
DC Characteristics CMOS Compatible table: Changed ICC1 maximum
current for 5 MHz and MHz test conditions.
Page Read Timings figure Corrected address range for top waveform
**
-
RYSU
10/23/2007 A6:Performance Characteristics Changed speed options for
S29GL512P
Ordering Information Corrected samples OPN valid combinations;
changed speed options for S29GL512P
64-Ball Fortified BGA Clarified ball “D1” connection
56-Pin TSOP Clarified pin “30” connection
Autoselect Added recommendation statement
Accelerated Program Added recommendation statement
Persistent Protection Bits Removed “Erase” from title and flow chart
Secured Silicon Sector
Sections “Factory Locked Secured Silicon Sector” & “Customer Lockable
Secured Silicon Sector”:
clarified shipping options
Power-up Sequence Timing Changed tRH from “Max” to “Min” value
Advance Information on S29GL-R 65 nm MirrorBit Hardware Reset
(RESET#) and Power-up Sequence
Added section
Global Fixed cross-references that were not live hyperlinks
Document Number: 002-00886 Rev. *A
Description of Change
Page 78 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Document History Page (Continued)
Document Title:S29GL01GP, S29GL512P, S29GL256P, S29GL128P
1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash with 90 nm MirrorBit Process Technology
Document Number: 002-00886
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
-
RYSU
11/08/2007 A7:Advance Information on S29GL-R 65 nm MirrorBit Hardware Reset
(RESET#) and Power-up Sequence
Changed timing specs and waveforms
**
-
RYSU
11/28/2007 A8:Ordering Information New commercial operating temperature option
Operating Ranges New operating temperature range
**
-
RYSU
02/15/2008 A9:Electrical Specification Modified Test Conditions
Erase and Programming Performance Chip Program Time: removed
comment
Sector Protection Command Definition,x16 Table
Corrected Lock Register “Read” address
Advance Information on S29GL-R 65 nm MirrorBit Hardware Reset
(RESET#) and Power-up Sequence
Power-Up Sequence Timings Table: modified Note 2 - reduced timing from 500
μs to 300 μs
**
-
RYSU
03/19/2008 A10:Global Changed document status to Full Production.
DC Characteristics Changed Max values for Input Load Current (ILI)
Sector Protection Command Definitions
(x16 & x8 tables)
Changed Lock Register Read command from “DATA” to “RD”
**
-
RYSU
06/11/2008 A11:Ordering Information Revised Commercial temperature range
Figure: Write Operation Status
Flowchart
Updated flowchart
Document Number: 002-00886 Rev. *A
Description of Change
Page 79 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Document History Page (Continued)
Document Title:S29GL01GP, S29GL512P, S29GL256P, S29GL128P
1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash with 90 nm MirrorBit Process Technology
Document Number: 002-00886
Rev.
ECN No.
Orig. of
Change
**
-
RYSU
Submission
Date
Description of Change
11/20/2009 A12:Table Input/Output Descriptions Removed RFU description
Figure 64-ball Fortified Ball Grid Array Changed all RFU pins to NC pins
Figure 56-pin Standard TSOP (Top View)
Changed all RFU pins to NC pins
Table Autoselect Exit Changed cycle description to Auto Select Exit
Command
Table Chip Erase Changed address of last C source code command from
0x000h to 0x555h
Erase Suspend/Erase Resume
Changed first paragraph, second sentence to sector address is “don't care”
for Erase Suspend
Changed sixth paragraph, second sentence to sector address is “don't
care” for Erase Suspend
Tables
Program Suspend
Program Resume
Unlock Bypass Entry
Unlock Bypass Program
Unlock Bypass Reset
Added Byte Address to tables
Unlock Bypass
Third paragraph, first sentence added unlock bypass Sector Erase and
unlock bypass Chip Erase
as valid commands
Changed paragraph, third sentence to sector address of exit command is
“don't care”.
Writing Commands/Command Sequence
Changed tables listed in fourth sentence to Table 6.1-6.4
WP#/ACC Method Changed table listed in Note section to 11.2.
Secured Silicon Sector Entry/Exit Command Sequence
Added source code for program under Table 10.3
Table Secured Silicon Sector Exit Changed Byte and Word addresses of
Exit Cycle to “XXXh”
Figure Test Setup Changed test setup to show only a load of CL
Table Test Specification Removed Output Load Test Condition
Table S29GL-P Erase and Program Operations
Removed tGHWL
Table S29GL-P Alternate CE# Controlled Erase and Program
Operations
Changed description of tGHEL to (OE# High to CE# Low)
Change Note 2 to “DC Characteristics
TSOP Pin and BGA Package Capacitance
Changed RESET# values.
Document Number: 002-00886 Rev. *A
Page 80 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
Document History Page (Continued)
Document Title:S29GL01GP, S29GL512P, S29GL256P, S29GL128P
1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash with 90 nm MirrorBit Process Technology
Document Number: 002-00886
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
-
RYSU
11/20/2008 Table S29GL-P Memory Array Command Definitions, x16
Changed number of cycles for Device ID to 6
Changed number of cycles for Write Buffer to 6
Added note regarding the number of cycles in a Write Buffer command
Table S29GL-P Memory Array Command Definitions, x8
Changed number of cycles for Device ID to 6
Changed number of cycles for Write Buffer to 6
Added note regarding the number of cycles in a Write Buffer command
Table System Interface String
Changed value of address 20h (x16) to 0009h and description to
“Typical timeout for buffer write 2n μs”
Added values of 128 Mb-512 Mb densities to address 22h (x16)
Table Device Geometry Definition For address 31h (x16) corrected x8
address
**
-
RYSU
11/17/2010 A13:Performance Characteristics Updated access time options for
S29GL512P
Ordering Information Updated speed options for S29GL512P
Read Operation Timing Figure Added note
**
-
RYSU
10/22/2012 A14:Sector Erase Clarified tSEA
Erase Suspend Clarified tSEA
Writing Commands/Command Sequences
Sub-section RY/BY#: Clarified last sentence
Figure Advanced Sector Protection/Unprotection
Corrected Note numbering
Table S29GL-P Memory Array Command Definitions, x8
Corrected Address for 3rd Cycle of Write-To-Buffer-Abort Reset command
Table System Interface String Changed value of address 20h (x16) to
0006h
Advance Information on S29GL-R 65 nm MirrorBit Hardware Reset
(RESET#) and Power-up Sequence
Updated section title to Advance Information on S29GL-S Eclipse 65 nm
MirrorBit Power-On and
Warm Reset Timing
Updated section to cover GL-S Power-On and Warm Reset Timing
*A
5051914
RYSU
12/16/2015 Updated to Cypress template
Document Number: 002-00886 Rev. *A
Description of Change
Page 81 of 82
S29GL01GP
S29GL512P
S29GL256P
S29GL128P
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© Cypress Semiconductor Corporation, 2004-2015. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
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United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
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the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 002-00886 Rev.*A
®
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Revised December 16, 2015
Page 82 of 82
Cypress , Spansion , MirrorBit , MirrorBit Eclipse™, ORNAND™, EcoRAM™, HyperBus™, HyperFlash™, and combinations thereof, are trademarks and registered trademarks of Cypress
Semiconductor Corp. All products and company names mentioned in this document may be the trademarks of their respective holders.
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Spansion Inc.:
S29GL01GP12FFI020 S29GL256P11TFI010 S29GL512P10TFCR20 S29GL256P11FFI013 S29GL128P10TFI020
S29GL512P11TFI013 S29GL128P90TFCR10 S29GL512P12FFIV10 S29GL512P11FFI012 S29GL256P10TFI023
S29GL256P11FFI010 S29GL512P12FFIV20 S29GL128P90FFCR10 S29GL256P10FFI010 S29GL256P11TFIV20
S29GL128P90TFCR20 S29GL256P90TFCR13 S29GL01GP12FFI010 S29GL256P11FFIV10 S29GL01GP11FFCR10
S29GL128P10TFI010 S29GL256P90FFIR10 S29GL128P10FFIS10 S29GL256P90TFCR20 S29GL256P10TFI013
S29GL128P90TFIR10 S29GL512P11FFI020 S29GL256P90FFIR20 S29GL01GP11TFCR10 S29GL128P90FFIR10
S29GL01GP12TFI020 S29GL01GP11FAIR20 S29GL512P10TFCR10 S29GL256P10TFI020 S29GL128P90FFIR20
S29GL256P11TFI013 S29GL128P90FFIR13 S29GL128P90TFIR13 S29GL512P10TFIR13 S29GL256P90TFIR20
S29GL512P11TFI010 S29GL01GP11FAIR10 S29GL128P90TFIR20 S29GL256P11TAIV20 S29GL128P11TFIV10
S29GL128P11TFI010 S29GL256P11FFIV20 S29GL256P10TFI010 S29GL512P10FFIR20 S29GL256P90FFCR20
S29GL01GP11TFIR13 S29GL01GP13FFIV10 S29GL512P10TFCR13 S29GL256P90FFCR10 S29GL256P90TFCR23
S29GL256P10FFIS10 S29GL01GP11TFIR20 S29GL512P10FFCR10 S29GL01GP11TFIR10 S29GL128P90FAIR10
S29GL128P10FFI020 S29GL01GP11TFCR20 S29GL128P90TFCR23 S29GL128P11FAI020 S29GL128P11FFI010
S29GL01GP11FFIR10 S29GL128P90FFCR23 S29GL128P90FFCR12 S29GL128P11FFIV20
S29GL128P90FFCR20 S29GL128P10FFI010 S29GL128P10TFI023 S29GL512P11FFIS10 S29GL512P10FFIR10
S29GL128P11FFI020 S29GL512P11TFI020 S29GL01GP11FFCR20 S29GL256P90TFCR10 S29GL01GP13FFIV20
S29GL256P11FFIV23 S29GL256P11TFI020 S29GL128P11FFIV10 S29GL128P11TFIV13 S29GL01GP11FFIR20
S29GL128P11TFI020 S29GL512P10TFIR10 S29GL512P10FFCR20 S29GL512P11FFI010 S29GL512P10TFIR20
S29GL01GP12TFI010 S29GL256P11FFI020 S29GL256P10FFI020 S29GL256P90TFIR10 S29GL128P90TFCR13
S29GL01GP13TFIV20 S29GL128P90FFIR12 S29GL512P10FFIR12 S29GL128P11FFI022 S29GL128P11TFI023
S29GL256P11FFI023
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