RFM50 V1.0 RFM50 MCU with 100mW 433/470/868/915 MHz ISM Band Transceiver Module

RFM50 V1.0 RFM50 MCU with 100mW 433/470/868/915 MHz ISM Band Transceiver Module
RFM50 V1.0
MCU with 100mW 433/470/868/915 MHz ISM Band Transceiver Module
(the purpose of this RFM50 spec covers mainly for the
hardware and RF parameter info of the module, for MCU
and software info please refer to RF50 chip data sheets,
for RFM50’ demo Please refer to RF(M)50 demo kit)
H
RFM50
H
1. General Introduction
5B
RFM50 module series’ design is based on the high performance
RF50 SoC chip, It include a CIP-51 core‘ MCU and 100mW
transceiver. It operate at 433/470/868/915 MHz ISM band, comply
with FCC, ETSI regulation.
2. Features
6B
Ultra Low Power: 0.9 to 3.6 V Operation
-Typical sleep mode current < 0.1 μA; retains state and RAM
contents over full supply range; fast wakeup of < 2 μs
-Less than 600 nA with RTC running
-Less than 1 μA with RTC running and radio state retained
-On-chip dc-dc converter allows operation down to 0.9 V.
-Two built-in brown-out detectors cover sleep and active modes
10-Bit Analog to Digital Converter
-Up to 300 ksps
-Up to 18 external inputs
-External pin or internal VREF (no external capacitor required)
-Built-in temperature sensor
-External conversion start input option
-Autonomous burst mode with 16-bit automatic averaging accumulator
Dual Comparators
-Programmable hysteresis and response time
-Configurable as interrupt or reset source
-Low current (< 0.5 μA)
On-Chip Debug
-On-chip debug circuitry facilitates full-speed, non-intrusive in-system debug (No emulator required)
-Provides breakpoints, single stepping
-Inspect/modify memory and registers
-Complete development kit
High-Speed 8051 μC Core
-Pipelined instruction architecture; executes 70% of instructions in 1 or 2 system clocks
-Up to 25 MIPS throughput with 25 MHz clock
-Expanded interrupt handler
Memory
-4352 bytes internal data RAM (256 + 4096)
-64 kB Flash; In-system programmable in 1024-byte sectors—1024 bytes are reserved in the 64 kB devices
Transceiver
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RFM50 V1.0
-Frequency range = 433,470,868,915 MHz ISM Band
-Sensitivity = –121 dBm
-FSK, GFSK, and OOK modulation
-Max output power = +20 dBm
-RF power consumption
- 18.5mA receive
-18 mA @+1 dBm transmit
- 40mA @+13 dBm transmit
- 100mA @+20 dBm transmit
-Data rate = 0.123 to 256 kbps
-Auto-frequency calibration (AFC)
- transmit/receive switch control
-Programmable packet handler
-TX and RX 64 byte FIFOs
-Frequency hopping capability
-On-chip crystal tuning
Digital Peripherals
-19 or 16 port I/O plus 3 GPIO pins; Hardware enhanced UART, SPI, and I2C serial ports available concurrently
-Low power 32-bit SmaRTClock
-Four general purpose 16-bit counter/timers; six channel programmable counter array (PCA)
Clock Sources
-Precision internal oscillators: 24.5 MHz with ±2% accuracy supports UART operation; spread-spectrum mode for
reduced EMI; Low power 20 MHz internal oscillator
-External oscillator: Crystal, RC, C, CMOS clock
-SmaRTClock oscillator: 32.768 kHz crystal or self-oscillate
-Can switch between clock sources on-the-fly; useful in power saving modes and in implementing various power saving
modes
I/O Port
-19 or 20 port I/O (5 V tolerant except for GPIO_2)
Package
-30-pin SMD (11x25X2.0 mm)
3. Typical Application
7B
• Internet of Things
• Wireless data collection
• Meter Reading
• Automobile security system
• Wireless sensor
• Home automation and security system
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RFM50 V1.0
4. Pin Definition
8B
Figure 1. RFM50 Pin Definition(TOP VIEW)
definition
Type
Function
ANT
AI/ AO
RF signal input/output port, Connect 50 OHM antenna
GND
G
Power ground
GPIO2
DI/DO or AI/AO
General Purpose I/O controlled by the RF22 periph-eral. May be configured
through the RF22 registers to perform various functions including: Clock Output,
FIFO status, POR, Wake-Up Timer, Low Battery Detect, TRSW, AntDiversity
control, etc. See the RF22 GPIO Con-figuration Registers for more information.
P0.7
D I/O or A I
Port 0.7. See RF50 Port I/O section for a complete description.
IREF0
AO
IREF0 Output. See RF50 IREF section for complete description.
P0.6
D I/O or A I
Port 0.6. See RF50 Port I/O section for a complete description.
CNVSTR
DI
External Convert Start Input for ADC0. See RF50 ADC0 section for a complete
description.
P0.5
D I/O or A I
Port 0.5. See RF50 Port I/O section for a complete description.
RX
DI
UART RX Pin. See RF50 Port I/O section.
P0.4
D I/O or A I
Port 0.4. See RF50 Port I/O section for a complete description.
TX
DO
UART TX Pin. See RF50 Port I/O section.
P0.1
D I/O or A I
Port 0.1. See Port I/O Section for a complete description. Optional Analog
AGND
G
Ground. See VREF chapter.
P0.3
D I/O or A In
Port 0.3. See RF50 Port I/O Section for a complete description.
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RFM50 V1.0
XTAL2
AO
External Clock Output. This pin is the excitation driver for an external crystal or
resonator.
DI
External Clock Input. This pin is the external clock input in external CMOS clock
mode.
AI
External Clock Input. This pin is the external clock input in capacitor or RC
oscillator configurations.
See RF50 Oscillator section for complete details.
P0.2
D I/O or A I
Port 0.2. See RF50 Port I/O Section for a complete description.
XTAL1
AI
External Clock Input. This pin is the external oscillator return for a crystal or
resonator. See RF50 Oscillator section.
P0.0
D I/O or A I
Port 0.0. See RF50 Port I/O section for a complete description.
VREF
AI
External VREF Input.
AO
Internal VREF Output. External VREF decoupling capacitors are recommended.
See RF50 Voltage Reference section.
RST/
D I/O
Device Reset. Open-drain output of internal POR or VDD monitor. An external
source can initiate a system reset by driving this pin low for at least 15 μs. A 1–5
k pullup to VDD_MCU is recommended. See Reset Sources section for a
complete description.
C2CK
D I/O
Clock signal for the C2 Debug Interface.
P2.7/
D I/O
Port 2.7. This pin can only be used as GPIO. The Crossbar cannot route signals
to this pin and it cannot be configured as an analog input. See RF50 Port I/O
section for a complete description.
C2D
D I/O
Bi-directional data signal for the C2 Debug Interface.
P2.6
D I/O or A I
Port 2.6. See RF50 Port I/O section for a complete description.
GND
G
Power ground
VDD
PI
Positive power supply, 1.8 to 3.6 V.
P2.5
D I/O or A I
Port 2.5. See RF50 Port I/O section for a complete description.
P2.4
D I/O or A I
Port 2.4. See RF50 Port I/O section for a complete description.
P2.3
D I/O or A I
Port 2.3. See RF50 Port I/O section for a complete description.
P2.2
D I/O or A I
Port 2.2. See RF50 Port I/O section for a complete description.
XTAL4
AO
SmaRTClock Oscillator Crystal Output.
XTAL3
AI
SmaRTClock Oscillator Crystal Input.
P2.1
D I/O or A I
Port 2.1. See RF50 Port I/O section for a complete description.
P2.0
D I/O or A I
Port 2.0. See RF50 Port I/O section for a complete description.
P1.7
D I/O or A I
Port 1.7. See RF50 Port I/O section for a complete description.
P1.6
D I/O or A I
Port 1.6. See RF50 Port I/O section for a complete description.
P1.5
D I/O or A I
Port 1.5. See RF50 Port I/O section for a complete description.
NIRQ
DO
RF22 peripheral interrupt status pin. Will be set low to indicate a pending RF22
interrupt event. See the RF22 Control Logic Registers for more details. This pin
is an open-drain output with a 220 k internal pullup resistor. An external pull-up
resistor is recommended.
XOUT
AO
RF22 peripheral crystal oscillator output. Connect to an external 30 MHz crystal
or leave floating if driving the XIN pin with an external signal source.
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RFM50 V1.0
XIN
AI
RF22 peripheral crystal oscillator input. Connect to an external 30 MHz crystal or
to an external source. If using an external clock source with no crystal, dc
coupling with a nominal 0.8 VDC level is recommended with a minimum ac
amplitude of 700 mVpp.
5. Electrical Parameter
9B
5.1 Maximum
0B
parameter
minimum
maximum
Unit
Positive power supply
-0.3
+3.6
V
Voltage on Digital Control Inputs
-0.3
VDD + 0.3
V
Voltage on Analog Inputs
-0.3
VDD + 0.3
V
+10
dBm
+125
℃
+260
℃
RX Input Power
Storage temperature
-55
Soldering temperature(10s)
5.2 Recommended working range
1B
parameter
minimum
maximum
Unit
Positive power supply
2.2
+3.6
V
Working temperature
-40
+85
℃
5.3 DC characteristic
2B
parameter
conditions
minimum
typical
maximum
Unit
Supply current
433,470,868,915MHZ band
100
mA
433,470,868,915MHZ band
40
mA
433,470,868,915MHZ band
18
mA
433,470,868,915MHZ band
18.5
mA
Low Power Digital Regulator ON
450
(TX mode, Pout =+20dBm)
Supply current
(TX mode, Pout = +13 dBm)
Supply current
(TX mode, Pout = +1dBm)
Supply current
(RX mode)
Standby current
800
nA
(Register values retained) and Main
Digital Regula-tor, and RC Oscillator
OFF
Sleep current
RC Oscillator and Low Power Digital
1
uA
Reg-ulator ON (Register values
retained) and Main Digital Regulator
OFF
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RFM50 V1.0
5.4 Transmitter AC characteristic
3B
parameter
conditions
minimum
TX frequency range
433 MHz band,
maximum
Unit
413
453
MHz
470 MHz band,
450
490
868 MHz band,
848
888
915 MHz band,
895
935
FSK Data Rate
0.123
256
Kbps
OOK Data Rate
0.123
40
Kbps
Modulation Deviation
typical
433,470MHZ
±0.625
±320
868,915MHZ
±0.625
±160
Modulation Deviation 
KHz
0.625
KHz
Resolution
Output Power Range
TX RF Output Steps
+1
+20
controlled by txpow[2:0]
dBm
3
dBm
5.5 Receiver AC characteristic
4B
parameter
RX Frequence Range
RX Sensitivity
conditions
minimum
433 MHz band,
470 MHz band,
maximum
Unit
413
453
MHz
450
490
868 MHz band,
848
888
915 MHz band,
895
935
(BER < 0.1%) (2 kbps, GFSK,
typical
–121
dBm
–108
dBm
–101
dBm
–110
dBm
-116
dBm
BT = 0.5, f = 5 kHz)3
(BER < 0.1%) (40 kbps, GFSK,
BT = 0.5, f = 20 kHz)3
(BER < 0.1%) (125 kbps,
GFSK, BT = 0.5, f = 62.5
kHz)
(BER < 0.1%) (4.8 kbps, 350
kHz BW, OOK)3
(BER<0.1%)(1.2Kbps,
FD=35KHz,BW=105KHz,
RX Channel Bandwidth
2.6
RSSI Resolutio
620
KHz
±0.5
RSSI Range
-120
dB
20
dB
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RFM50 V1.0
6. Mechanical Dimension
10B
(All units in mm)
7
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RFM50 V1.0
7. Ordering information
1B
Part Number=Module type + Operation Band
RFM50 – 433
U
U
module type
U
operation band
example:
1.RFM50 module at 433MHz band, RFM50-433。
Model
operation band
RFM50-433
433MHZ
RFM50-470
470MHZ
RFM50-868
868MHZ
RFM50-915
915MHZ
This document may contain preliminary information and is subject to change by
Hope Microelectronics without notice. Hope Microelectronics assumes no
responsibility or liability for any use of the information contained herein. Nothing
HOPE MICROELECTRONICS CO.,LTD
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in this document shall operate as an express or implied license or indemnity
Area,
under the intellectual property rights of Hope Microelectronics or third parties.
Huaqiaocheng, Shenzhen, Guangdong, China
The products described in this document are not intended for use in implantation
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