64 Mbit (8 M x 8-Bit/4 M x 16-Bit), 3... Simultaneous Read/Write Flash S29JL064J Distinctive Characteristics

64 Mbit (8 M x 8-Bit/4 M x 16-Bit), 3... Simultaneous Read/Write Flash S29JL064J Distinctive Characteristics
S29JL064J
64 Mbit (8 M x 8-Bit/4 M x 16-Bit), 3 V
Simultaneous Read/Write Flash
Distinctive Characteristics
Architectural Advantages
 Simultaneous Read/Write operations
– Data can be continuously read from one bank while executing
erase/program functions in another bank
– Zero latency between read and write operations
 Flexible bank architecture
– Read may occur in any of the three banks not being programmed
or erased
– Four banks may be grouped by customer to achieve desired bank
divisions
 Boot sectors
– Top and bottom boot sectors in the same device
– Any combination of sectors can be erased
 Manufactured on 0.11 µm Process Technology
 Secured Silicon Region: Extra 256-byte sector
– Factory locked and identifiable: 16 bytes available for secure,
random factory Electronic Serial Number; verifiable as factory
locked through autoselect function
– Customer lockable: One-time programmable only. Once locked,
data cannot be changed
 Zero power operation
– Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero
 Compatible with JEDEC standards
– Pinout and software compatible with single-power-supply flash
standard
Package Options
 Ultra low power consumption (typical values)
– 2 mA active read current at 1 MHz
– 10 mA active read current at 5 MHz
– 200 nA in standby or automatic sleep mode
 Cycling endurance: 1 million cycles per sector typical
 Data retention: 20 years typical
Software Features
 Supports Common Flash Memory Interface (CFI)
 Erase suspend/erase resume
– Suspends erase operations to read data from, or program data to,
a sector that is not being erased, then resumes the erase
operation
 Data# polling and toggle bits
– Provides a software method of detecting the status of program or
erase operations
 Unlock bypass program command
– Reduces overall programming time when issuing multiple program
command sequences
Hardware Features
 Ready/Busy# output (RY/BY#)
– Hardware method for detecting program or erase cycle
completion
 Hardware reset pin (RESET#)
– Hardware method of resetting the internal state machine to the
read mode
 WP#/ACC input pin
– Write protect (WP#) function protects sectors 0, 1, 140, and 141,
regardless of sector protect status
– Acceleration (ACC) function accelerates program timing
 48-ball Fine-pitch BGA
 48-pin TSOP
Performance Characteristics
 High performance
– Access time as fast as 55 ns
– Program time: 7 µs/word typical using accelerated programming
function
 Sector Protection
– Hardware method to prevent any program or erase operation
within a sector
– Temporary Sector Unprotect allows changing data in protected
sectors in-system
General Description
The S29JL064J is a 64 Mbit, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of
8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be
programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers. The
device is available with an access time of 55, 60, 70 ns and is offered in a 48-ball FBGA or 48-pin TSOP package. Standard control
pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus
contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations.
Cypress Semiconductor Corporation
Document Number: 002-00856 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised December 08, 2015
S29JL064J
Contents
1.
1.1
Simultaneous Read/Write Operations with Zero
Latency ......................................................................... 3
S29JL064J Features...................................................... 3
2.
Product Selector Guide ............................................... 4
3.
Block Diagram.............................................................. 4
4.
4.1
4.2
Connection Diagrams.................................................. 5
48-pin TSOP Package ................................................... 5
48-ball FBGA Package .................................................. 6
5.
Pin Description............................................................. 6
6.
Logic Symbol ............................................................... 7
7.
Ordering Information ................................................... 8
8.
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
8.9
8.10
8.11
8.12
8.13
8.14
Device Bus Operations................................................ 9
Word/Byte Configuration................................................ 9
Requirements for Reading Array Data......................... 10
Writing Commands/Command Sequences.................. 10
Simultaneous Read/Write Operations with
Zero Latency ................................................................ 10
Standby Mode.............................................................. 11
Automatic Sleep Mode................................................. 11
RESET#: Hardware Reset Pin..................................... 11
Output Disable Mode ................................................... 12
Autoselect Mode .......................................................... 16
Boot Sector/Sector Block Protection and Unprotection 17
Write Protect (WP#) ..................................................... 18
Temporary Sector Unprotect........................................ 19
Secured Silicon Region................................................ 21
Hardware Data Protection............................................ 22
9.
Common Flash Memory Interface (CFI) ................... 23
10.
10.1
10.2
10.3
10.4
10.5
10.6
10.7
10.8
Command Definitions................................................
Reading Array Data .....................................................
Reset Command ..........................................................
Autoselect Command Sequence .................................
Enter Secured Silicon Region/Exit Secured
Silicon Region Command Sequence ...........................
Byte/Word Program Command Sequence...................
Chip Erase Command Sequence ................................
Sector Erase Command Sequence .............................
Erase Suspend/Erase Resume Commands ................
27
27
29
29
30
11.
11.1
11.2
11.3
11.4
11.5
11.6
11.7
Write Operation Status ..............................................
DQ7: Data# Polling ......................................................
RY/BY#: Ready/Busy#.................................................
DQ6: Toggle Bit I .........................................................
DQ2: Toggle Bit II ........................................................
Reading Toggle Bits DQ6/DQ2....................................
DQ5: Exceeded Timing Limits .....................................
DQ3: Sector Erase Timer.............................................
32
32
33
34
35
36
36
36
12.
Absolute Maximum Ratings...................................... 37
13.
Operating Ranges ...................................................... 38
14.
DC Characteristics..................................................... 38
Document Number: 002-00856 Rev. *E
14.1 CMOS Compatible ........................................................ 38
14.2 Zero-Power Flash ......................................................... 39
15.
Test Conditions ........................................................... 40
16.
Key To Switching Waveforms .................................... 41
17.
17.1
17.2
17.3
17.4
17.5
17.6
AC Characteristics...................................................... 42
Read-Only Operations .................................................. 42
Hardware Reset (RESET#)........................................... 43
Word/Byte Configuration (BYTE#) ................................ 44
Erase and Program Operations .................................... 45
Temporary Sector Unprotect......................................... 49
Alternate CE# Controlled Erase and Program
Operations .................................................................... 50
18.
Erase and Programming Performance ..................... 52
19.
Pin Capacitance .......................................................... 52
20. Physical Dimensions .................................................. 53
20.1 TS 048—48-Pin Standard TSOP.................................. 53
20.2 VBK048—48-Pin FBGA ................................................ 54
21.
Revision History.......................................................... 55
26
26
26
27
Page 2 of 59
S29JL064J
1.
Simultaneous Read/Write Operations with Zero Latency
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into four banks, two
8 Mb banks with small and large sectors, and two 24 Mb banks of large sectors. Sector addresses are fixed, system software can be
used to form user-defined bank groups.
During an Erase/Program operation, any of the three non-busy banks may be read from. Note that only two banks can operate
simultaneously. The device can improve overall system performance by allowing a host system to program or erase in one bank,
then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting for the
completion of program or erase operations.
The S29JL064J is organized as a dual boot device with both top and bottom boot sectors.
1.1
Bank
Mbits
Sector Sizes
Bank 1
8 Mb
Eight 8 kbyte/4 kword,
Fifteen 64 kbyte/32 kword
Bank 2
24 Mb
Forty-eight 64 kbyte/32 kword
Bank 3
24 Mb
Forty-eight 64 kbyte/32 kword
Bank 4
8 Mb
Eight 8 kbyte/4 kword,
Fifteen 64 kbyte/32 kword
S29JL064J Features
The Secured Silicon Region is an extra 256 byte sector capable of being permanently locked by Spansion or customers. The
Secured Silicon Customer Indicator Bit (DQ6) is permanently set to 1 if the part has been customer locked, and permanently set to 0
if the part has been factory locked. This way, customer lockable parts can never be used to replace a factory locked part.
Factory locked parts provide several options. The Secured Silicon Region may store a secure, random 16 byte ESN (Electronic
Serial Number), customer code (programmed through Spansion programming services), or both. Customer Lockable parts may
utilize the Secured Silicon Region as bonus space, reading and writing like any other flash sector, or may permanently lock their own
code there.
The device offers complete compatibility with the JEDEC 42.4 single-power-supply Flash command set standard. Commands
are written to the command register using standard microprocessor write timings. Reading data out of the device is similar to reading
from other Flash or EPROM devices.
The host system can detect whether a program or erase operation is complete by using the device status bits: RY/BY# pin, DQ7
(Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to
the read mode.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other
sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power
transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors
of memory. This can be achieved in-system or via programming equipment.
The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or
program data to, any sector that is not selected for erasure. True background erase can thus be achieved. If a read is needed from
the Secured Silicon Region (One Time Program area) after an erase suspend, then the user must use the proper command
sequence to enter and exit this region.
The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters
the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in
both modes.
Document Number: 002-00856 Rev. *E
Page 3 of 59
S29JL064J
2. Product Selector Guide
Part Number
Speed Option
S29JL064J
Standard Voltage Range: VCC = 2.7–3.6V
55
60
70
Max Access Time (ns), tACC
55
60
70
CE# Access (ns), tCE
55
60
70
OE# Access (ns), tOE
25
25
30
3. Block Diagram
VCC
VSS
OE#
Mux
BYTE#
Bank 1
Bank 2
X-Decoder
A21–A0
RESET#
WE#
CE#
BYTE#
WP#/ACC
STATE
CONTROL
&
COMMAND
REGISTER
Status
DQ15–DQ0
Control
Mux
DQ15–DQ0
DQ0–DQ15
Bank 3 Address
Bank 3
X-Decoder
Bank 4 Address
Y-gate
A21–A0
X-Decoder
A21–A0
DQ15–DQ0
Bank 2 Address
DQ15–DQ0
RY/BY#
DQ15–DQ0
A21–A0
X-Decoder
Y-gate
Bank 1 Address
A21–A0
Bank 4
Mux
Document Number: 002-00856 Rev. *E
Page 4 of 59
S29JL064J
4. Connection Diagrams
4.1
48-pin TSOP Package
Figure 4.1 48-Pin Standard TSOP
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RESET#
A21
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Document Number: 002-00856 Rev. *E
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
Page 5 of 59
S29JL064J
4.2
48-ball FBGA Package
Figure 4.2 48-ball FBGA
A6
B6
C6
D6
E6
A13
A12
A14
A15
A16
A5
B5
C5
D5
E5
F5
G5
H5
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A4
B4
C4
D4
E4
F4
G4
H4
WE#
RESET#
A21
A19
DQ5
DQ12
VCC
DQ4
A3
B3
RY/BY# WP#/ACC
F6
G6
BYTE# DQ15/A-1
H6
VSS
C3
D3
E3
F3
G3
H3
A18
A20
DQ2
DQ10
DQ11
DQ3
A2
B2
C2
D2
E2
F2
G2
H2
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A1
B1
C1
D1
E1
F1
G1
H1
A3
A4
A2
A1
A0
CE#
OE#
VSS
5. Pin Description
A21–A0
DQ14–DQ0
DQ15/A-1
22 Address pins
15 Data Inputs/Outputs (x16-only devices)
DQ15 (Data Input/Output, word mode), A-1 (LSB Address Input, byte mode)
CE#
Chip Enable, Active Low
OE#
Output Enable, Active Low
WE#
Write Enable, Active Low
WP#/ACC
RESET#
Hardware Write Protect/Acceleration Pin
Hardware Reset Pin, Active Low
BYTE#
Selects 8-bit or 16-bit mode, Active Low
RY/BY#
Ready/Busy Output, Active Low
VCC
3.0 volt-only single power supply (see Product Selector Guide on page 4 for speed options and voltage
supply tolerances)
VSS
Device Ground
NC
Not Connected. No device internal signal is connected to the package connector nor is there any future plan to use the
connector for a signal. The connection may safely be used for routing space for a signal on a Printed Circuit Board
(PCB).
DNU
Do Not Use. A device internal signal may be connected to the package connector. The connection may be used by
Spansion for test or other purposes and is not intended for connection to any host system signal. Any DNU signal
related function will be inactive when the signal is at VIL. The signal has an internal pull-down resistor and may be left
unconnected in the host system or may be tied to VSS. Do not use these connections for PCB signal routing channels.
Do not connect any host system signal to these connections.
RFU
Reserved for Future Use. No device internal signal is currently connected to the package connector but there is
potential future use for the connector for a signal. It is recommended to not use RFU connectors for PCB routing
channels so that the PCB may take advantage of future enhanced features in compatible footprint devices.
Document Number: 002-00856 Rev. *E
Page 6 of 59
S29JL064J
6.
Logic Symbol
22
A21–A0
16 or 8
DQ15–DQ0
(A-1)
CE#
OE#
WE#
WP#/ACC
RESET#
RY/BY#
BYTE#
Document Number: 002-00856 Rev. *E
Page 7 of 59
S29JL064J
7.
Ordering Information
The order number is formed by a valid combination of the following:
S29JL064J
55
T
F
I
00
0
Packing Type
0 = Tray
3 = 13-inch Tape and Reel
Model Number (Additional Ordering Options)
00 = Standard Configuration
Temperature Range
I = Industrial (–40°C to +85°C)
Package Material Set
F = Pb-free
H = Low-halogen, Pb-free
Package Type
B = Fine-pitch Ball Grid Array (FBGA) Package
T = Thin Small Outline Package (TSOP) Standard Pinout
Speed Option
55 = 55 ns
60 = 60 ns
70 = 70 ns
Product Family
S29JL064J: 3.0 Volt-only, 64 Mbit (4 M x 16-bit/8 M x 8-bit) Simultaneous Read/
Write Flash Memory Manufactured on 110 nm process technology
S29JL064J Valid Combinations
Device Number/
Description
S29JL064J
Package Type
Speed (ns)
& Material
55, 60, 70
Temperature Range Model Number Packing Type Package Description
TF
BH
I
00
0, 3 (1)
TS048
TSOP
VBK048
FBGA
Note:
1. Packing type 0 is standard. Specify other options as required.
Document Number: 002-00856 Rev. *E
Page 8 of 59
S29JL064J
8.
Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the internal command
register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the
commands, along with the address and data information needed to execute the command. The contents of the register serve as
inputs to the internal state machine. The state machine outputs dictate the function of the device. Table lists the device bus
operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these
operations in further detail.
S29JL064J Device Bus Operations
DQ15–DQ8
Operation
CE#
OE#
WE#
RESET#
WP#/
ACC
Addresses
(Note 1)
BYTE#
= VIH
BYTE# = VIL
DQ7–
DQ0
DQ14–DQ8 = High-Z,
DQ15 = A-1
DOUT
High-Z
High-Z
High-Z
Read
L
L
H
H
L/H
AIN
DOUT
Write
L
H
L
H
(Note 3)
AIN
DIN
L/H
X
DIN
VCC 
0.3V
X
X
VCC 
0.3V
Output Disable
L
H
H
H
L/H
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
L/H
X
High-Z
High-Z
High-Z
X
X
DIN
Standby
Sector Protect (Note 2)
Sector Unprotect
(Note 2)
Temporary Sector
Unprotect
L
H
L
VID
L/H
SA, A6 = L,
A1 = H, A0 = L
L
H
L
VID
(Note 3)
SA, A6 = H,
A1 = H, A0 = L
X
X
DIN
X
X
X
VID
(Note 3)
AIN
DIN
High-Z
DIN
Legend
L = Logic Low = VIL
H = Logic High = VIH
VID = 11.5–12.5V
VHH = 9.0 ± 0.5V
X = Don’t Care
SA = Sector Address
AIN = Address In
DIN = Data In
DOUT = Data Out
Notes:
1. Addresses are A21:A0 in word mode (BYTE# = VIH), A21:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See Boot Sector/Sector Block Protection and Unprotection
on page 17.
3. If WP#/ACC = VIL, sectors 0, 1, 140, and 141 remain protected. If WP#/ACC = VIH, protection on sectors 0, 1, 140, and 141 depends on whether they were last
protected or unprotected using the method described in Boot Sector/Sector Block Protection and Unprotection on page 17. If WP#/ACC = VHH, all sectors will be
unprotected.
8.1
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic
‘1’, the device is in word configuration, DQ15–DQ0 are active and controlled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ7–DQ0 are active and controlled by
CE# and OE#. The data I/O pins DQ14–DQ8 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function.
Document Number: 002-00856 Rev. *E
Page 9 of 59
S29JL064J
8.2
Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the
device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The BYTE# pin determines
whether the device outputs array data in words or bytes.
The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no
spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the
device data outputs. Each bank remains enabled for read access until the command register contents are altered.
Refer to Read-Only Operations on page 42 for timing specifications and to Figure 17.1 on page 42 for the timing diagram. ICC1 in DC
Characteristics on page 38 represents the active current specification for reading array data.
8.3
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the
system must drive WE# and CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to Word/Byte
Configuration on page 9 for more information.
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only
two write cycles are required to program a word or byte, instead of four. Byte/Word Program Command Sequence on page 27 has
details on programming data to the device using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table on page 15 indicates the address space that
each sector occupies. Similarly, a sector address is the address bits required to uniquely select a sector. Command Definitions
on page 26 has details on erasing a sector or the entire chip, or suspending/resuming the erase operation.
The device address space is divided into four banks. A bank address is the address bits required to uniquely select a bank.
ICC2 in the DC Characteristics on page 38 represents the active current specification for the write mode. AC Characteristics
on page 42 contains timing specification tables and timing diagrams for write operations.
8.3.1
Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This is one of two functions provided by the WP#/ACC
pin. This function is primarily intended to allow faster manufacturing throughput at the factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily
unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The
system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the WP#/
ACC pin returns the device to normal operation. Note that VHH must not be asserted on WP#/ACC for operations other than
accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected;
inconsistent behavior of the device may result. See Write Protect (WP#) on page 18 for related information.
8.3.2
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read
autoselect codes from the internal register (which is separate from the memory array) on DQ15–DQ0. Standard read cycle timings
apply in this mode. Refer to Autoselect Mode on page 16 and Autoselect Command Sequence on page 27 for more information.
8.4
Simultaneous Read/Write Operations with Zero Latency
This device is capable of reading data from one bank of memory while programming or erasing in another bank of memory. An erase
operation may also be suspended to read from or program to another location within the same bank (except the sector being
erased). Figure 17.8 on page 47 shows how read and write cycles may be initiated for simultaneous operation with zero latency.
ICC6 and ICC7 in the DC Characteristics on page 38 represent the current specifications for read-while-program and read-whileerase, respectively.
Document Number: 002-00856 Rev. *E
Page 10 of 59
S29JL064J
8.5
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current
consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3V. (Note that this is a more
restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within VCC ± 0.3V, the device will be in the standby
mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in
either of these standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation is completed.
ICC3 in DC Characteristics on page 38 represents the standby current specification.
8.6
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when
addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals.
Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and
always available to the system. ICC5 in DC Characteristics on page 38 represents the automatic sleep mode current specification.
8.7
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for
at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/
write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The
operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data
integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS ±0.3V, the device draws CMOS standby
current (ICC4). If RESET# is held at VIL but not within VSS ±0.3V, the standby current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the
system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is
complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine
whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is
“1”), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after
the RESET# pin returns to VIH.
Refer to Hardware Reset (RESET#) on page 43 for RESET# parameters and to Figure 17.2 on page 43 for the timing diagram.
Document Number: 002-00856 Rev. *E
Page 11 of 59
S29JL064J
8.8
Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state.
S29JL064J Sector Architecture (Sheet 1 of 4)
Bank
Bank 1
Sector
Sector Address
A21–A12
Sector Size
(kbytes/kwords)
(x8)
Address Range
(x16)
Address Range
SA0
0000000000
8/4
000000h–001FFFh
00000h–00FFFh
SA1
0000000001
8/4
002000h–003FFFh
01000h–01FFFh
SA2
0000000010
8/4
004000h–005FFFh
02000h–02FFFh
SA3
0000000011
8/4
006000h–007FFFh
03000h–03FFFh
SA4
0000000100
8/4
008000h–009FFFh
04000h–04FFFh
SA5
0000000101
8/4
00A000h–00BFFFh
05000h–05FFFh
SA6
0000000110
8/4
00C000h–00DFFFh
06000h–06FFFh
SA7
0000000111
8/4
00E000h–00FFFFh
07000h–07FFFh
SA8
0000001xxx
64/32
010000h–01FFFFh
08000h–0FFFFh
SA9
0000010xxx
64/32
020000h–02FFFFh
10000h–17FFFh
SA10
0000011xxx
64/32
030000h–03FFFFh
18000h–1FFFFh
SA11
0000100xxx
64/32
040000h–04FFFFh
20000h–27FFFh
SA12
0000101xxx
64/32
050000h–05FFFFh
28000h–2FFFFh
SA13
0000110xxx
64/32
060000h–06FFFFh
30000h–37FFFh
SA14
0000111xxx
64/32
070000h–07FFFFh
38000h–3FFFFh
SA15
0001000xxx
64/32
080000h–08FFFFh
40000h–47FFFh
SA16
0001001xxx
64/32
090000h–09FFFFh
48000h–4FFFFh
SA17
0001010xxx
64/32
0A0000h–0AFFFFh
50000h–57FFFh
SA18
0001011xxx
64/32
0B0000h–0BFFFFh
58000h–5FFFFh
SA19
0001100xxx
64/32
0C0000h–0CFFFFh
60000h–67FFFh
SA20
0001101xxx
64/32
0D0000h–0DFFFFh
68000h–6FFFFh
SA21
0001110xxx
64/32
0E0000h–0EFFFFh
70000h–77FFFh
SA22
0001111xxx
64/32
0F0000h–0FFFFFh
78000h–7FFFFh
Document Number: 002-00856 Rev. *E
Page 12 of 59
S29JL064J
S29JL064J Sector Architecture (Sheet 2 of 4)
Bank
Bank 2
Sector
Sector Address
A21–A12
Sector Size
(kbytes/kwords)
(x8)
Address Range
(x16)
Address Range
SA23
0010000xxx
64/32
100000h–10FFFFh
80000h–87FFFh
SA24
0010001xxx
64/32
110000h–11FFFFh
88000h–8FFFFh
SA25
0010010xxx
64/32
120000h–12FFFFh
90000h–97FFFh
SA26
0010011xxx
64/32
130000h–13FFFFh
98000h–9FFFFh
SA27
0010100xxx
64/32
140000h–14FFFFh
A0000h–A7FFFh
SA28
0010101xxx
64/32
150000h–15FFFFh
A8000h–AFFFFh
SA29
0010110xxx
64/32
160000h–16FFFFh
B0000h–B7FFFh
SA30
0010111xxx
64/32
170000h–17FFFFh
B8000h–BFFFFh
SA31
0011000xxx
64/32
180000h–18FFFFh
C0000h–C7FFFh
SA32
0011001xxx
64/32
190000h–19FFFFh
C8000h–CFFFFh
SA33
0011010xxx
64/32
1A0000h–1AFFFFh
D0000h–D7FFFh
SA34
0011011xxx
64/32
1B0000h–1BFFFFh
D8000h–DFFFFh
SA35
0011000xxx
64/32
1C0000h–1CFFFFh
E0000h–E7FFFh
SA36
0011101xxx
64/32
1D0000h–1DFFFFh
E8000h–EFFFFh
SA37
0011110xxx
64/32
1E0000h–1EFFFFh
F0000h–F7FFFh
SA38
0011111xxx
64/32
1F0000h–1FFFFFh
F8000h–FFFFFh
SA39
0100000xxx
64/32
200000h–20FFFFh
100000h–107FFFh
SA40
0100001xxx
64/32
210000h–21FFFFh
108000h–10FFFFh
SA41
0100010xxx
64/32
220000h–22FFFFh
110000h–117FFFh
SA42
0101011xxx
64/32
230000h–23FFFFh
118000h–11FFFFh
SA43
0100100xxx
64/32
240000h–24FFFFh
120000h–127FFFh
SA44
0100101xxx
64/32
250000h–25FFFFh
128000h–12FFFFh
SA45
0100110xxx
64/32
260000h–26FFFFh
130000h–137FFFh
SA46
0100111xxx
64/32
270000h–27FFFFh
138000h–13FFFFh
SA47
0101000xxx
64/32
280000h–28FFFFh
140000h–147FFFh
SA48
0101001xxx
64/32
290000h–29FFFFh
148000h–14FFFFh
SA49
0101010xxx
64/32
2A0000h–2AFFFFh
150000h–157FFFh
SA50
0101011xxx
64/32
2B0000h–2BFFFFh
158000h–15FFFFh
SA51
0101100xxx
64/32
2C0000h–2CFFFFh
160000h–167FFFh
SA52
0101101xxx
64/32
2D0000h–2DFFFFh
168000h–16FFFFh
SA53
0101110xxx
64/32
2E0000h–2EFFFFh
170000h–177FFFh
SA54
0101111xxx
64/32
2F0000h–2FFFFFh
178000h–17FFFFh
SA55
0110000xxx
64/32
300000h–30FFFFh
180000h–187FFFh
SA56
0110001xxx
64/32
310000h–31FFFFh
188000h–18FFFFh
SA57
0110010xxx
64/32
320000h–32FFFFh
190000h–197FFFh
SA58
0110011xxx
64/32
330000h–33FFFFh
198000h–19FFFFh
SA59
0110100xxx
64/32
340000h–34FFFFh
1A0000h–1A7FFFh
SA60
0110101xxx
64/32
350000h–35FFFFh
1A8000h–1AFFFFh
SA61
0110110xxx
64/32
360000h–36FFFFh
1B0000h–1B7FFFh
SA62
0110111xxx
64/32
370000h–37FFFFh
1B8000h–1BFFFFh
SA63
0111000xxx
64/32
380000h–38FFFFh
1C0000h–1C7FFFh
SA64
0111001xxx
64/32
390000h–39FFFFh
1C8000h–1CFFFFh
SA65
0111010xxx
64/32
3A0000h–3AFFFFh
1D0000h–1D7FFFh
SA66
0111011xxx
64/32
3B0000h–3BFFFFh
1D8000h–1DFFFFh
SA67
0111100xxx
64/32
3C0000h–3CFFFFh
1E0000h–1E7FFFh
SA68
0111101xxx
64/32
3D0000h–3DFFFFh
1E8000h–1EFFFFh
Document Number: 002-00856 Rev. *E
Page 13 of 59
S29JL064J
S29JL064J Sector Architecture (Sheet 3 of 4)
Bank
Bank 3
Sector
Sector Address
A21–A12
Sector Size
(kbytes/kwords)
(x8)
Address Range
(x16)
Address Range
SA71
1000000xxx
64/32
400000h–40FFFFh
200000h–207FFFh
SA72
1000001xxx
64/32
410000h–41FFFFh
208000h–20FFFFh
SA73
1000010xxx
64/32
420000h–42FFFFh
210000h–217FFFh
SA74
1000011xxx
64/32
430000h–43FFFFh
218000h–21FFFFh
SA75
1000100xxx
64/32
440000h–44FFFFh
220000h–227FFFh
SA76
1000101xxx
64/32
450000h–45FFFFh
228000h–22FFFFh
SA77
1000110xxx
64/32
460000h–46FFFFh
230000h–237FFFh
SA78
1000111xxx
64/32
470000h–47FFFFh
238000h–23FFFFh
SA79
1001000xxx
64/32
480000h–48FFFFh
240000h–247FFFh
SA80
1001001xxx
64/32
490000h–49FFFFh
248000h–24FFFFh
SA81
1001010xxx
64/32
4A0000h–4AFFFFh
250000h–257FFFh
SA82
1001011xxx
64/32
4B0000h–4BFFFFh
258000h–25FFFFh
SA83
1001100xxx
64/32
4C0000h–4CFFFFh
260000h–267FFFh
SA84
1001101xxx
64/32
4D0000h–4DFFFFh
268000h–26FFFFh
SA85
1001110xxx
64/32
4E0000h–4EFFFFh
270000h–277FFFh
SA86
1001111xxx
64/32
4F0000h–4FFFFFh
278000h–27FFFFh
SA87
1010000xxx
64/32
500000h–50FFFFh
280000h–28FFFFh
SA88
1010001xxx
64/32
510000h–51FFFFh
288000h–28FFFFh
SA89
1010010xxx
64/32
520000h–52FFFFh
290000h–297FFFh
SA90
1010011xxx
64/32
530000h–53FFFFh
298000h–29FFFFh
SA91
1010100xxx
64/32
540000h–54FFFFh
2A0000h–2A7FFFh
SA92
1010101xxx
64/32
550000h–55FFFFh
2A8000h–2AFFFFh
SA93
1010110xxx
64/32
560000h–56FFFFh
2B0000h–2B7FFFh
SA94
1010111xxx
64/32
570000h–57FFFFh
2B8000h–2BFFFFh
SA95
1011000xxx
64/32
580000h–58FFFFh
2C0000h–2C7FFFh
SA96
1011001xxx
64/32
590000h–59FFFFh
2C8000h–2CFFFFh
SA97
1011010xxx
64/32
5A0000h–5AFFFFh
2D0000h–2D7FFFh
SA98
1011011xxx
64/32
5B0000h–5BFFFFh
2D8000h–2DFFFFh
SA99
1011100xxx
64/32
5C0000h–5CFFFFh
2E0000h–2E7FFFh
SA100
1011101xxx
64/32
5D0000h–5DFFFFh
2E8000h–2EFFFFh
SA101
1011110xxx
64/32
5E0000h–5EFFFFh
2F0000h–2FFFFFh
SA102
1011111xxx
64/32
5F0000h–5FFFFFh
2F8000h–2FFFFFh
SA103
1100000xxx
64/32
600000h–60FFFFh
300000h–307FFFh
SA104
1100001xxx
64/32
610000h–61FFFFh
308000h–30FFFFh
SA105
1100010xxx
64/32
620000h–62FFFFh
310000h–317FFFh
SA106
1100011xxx
64/32
630000h–63FFFFh
318000h–31FFFFh
SA107
1100100xxx
64/32
640000h–64FFFFh
320000h–327FFFh
SA108
1100101xxx
64/32
650000h–65FFFFh
328000h–32FFFFh
SA109
1100110xxx
64/32
660000h–66FFFFh
330000h–337FFFh
SA110
1100111xxx
64/32
670000h–67FFFFh
338000h–33FFFFh
SA111
1101000xxx
64/32
680000h–68FFFFh
340000h–347FFFh
SA112
1101001xxx
64/32
690000h–69FFFFh
348000h–34FFFFh
SA113
1101010xxx
64/32
6A0000h–6AFFFFh
350000h–357FFFh
SA114
1101011xxx
64/32
6B0000h–6BFFFFh
358000h–35FFFFh
SA115
1101100xxx
64/32
6C0000h–6CFFFFh
360000h–367FFFh
SA116
1101101xxx
64/32
6D0000h–6DFFFFh
368000h–36FFFFh
Document Number: 002-00856 Rev. *E
Page 14 of 59
S29JL064J
S29JL064J Sector Architecture (Sheet 4 of 4)
Bank
Bank 4
Sector
Sector Address
A21–A12
Sector Size
(kbytes/kwords)
(x8)
Address Range
(x16)
Address Range
SA119
1110000xxx
64/32
700000h–70FFFFh
380000h–387FFFh
SA120
1110001xxx
64/32
710000h–71FFFFh
388000h–38FFFFh
SA121
1110010xxx
64/32
720000h–72FFFFh
390000h–397FFFh
SA122
1110011xxx
64/32
730000h–73FFFFh
398000h–39FFFFh
SA123
1110100xxx
64/32
740000h–74FFFFh
3A0000h–3A7FFFh
SA124
1110101xxx
64/32
750000h–75FFFFh
3A8000h–3AFFFFh
SA125
1110110xxx
64/32
760000h–76FFFFh
3B0000h–3B7FFFh
SA126
1110111xxx
64/32
770000h–77FFFFh
3B8000h–3BFFFFh
SA127
1111000xxx
64/32
780000h–78FFFFh
3C0000h–3C7FFFh
SA128
1111001xxx
64/32
790000h–79FFFFh
3C8000h–3CFFFFh
SA129
1111010xxx
64/32
7A0000h–7AFFFFh
3D0000h–3D7FFFh
SA130
1111011xxx
64/32
7B0000h–7BFFFFh
3D8000h–3DFFFFh
SA131
1111100xxx
64/32
7C0000h–7CFFFFh
3E0000h–3E7FFFh
SA132
1111101xxx
64/32
7D0000h–7DFFFFh
3E8000h–3EFFFFh
SA133
1111110xxx
64/32
7E0000h–7EFFFFh
3F0000h–3F7FFFh
SA134
1111111000
8/4
7F0000h–7F1FFFh
3F8000h–3F8FFFh
SA135
1111111001
8/4
7F2000h–7F3FFFh
3F9000h–3F9FFFh
SA136
1111111010
8/4
7F4000h–7F5FFFh
3FA000h–3FAFFFh
SA137
1111111011
8/4
7F6000h–7F7FFFh
3FB000h–3FBFFFh
SA138
1111111100
8/4
7F8000h–7F9FFFh
3FC000h–3FCFFFh
SA139
1111111101
8/4
7FA000h–7FBFFFh
3FD000h–3FDFFFh
SA140
1111111110
8/4
7FC000h–7FDFFFh
3FE000h–3FEFFFh
SA141
1111111111
8/4
7FE000h–7FFFFFh
3FF000h–3FFFFFh
Note:
The address range is A21:A-1 in byte mode (BYTE# = VIL) or A21:A0 in word mode (BYTE# = VIH).
Bank Address
Bank
A21–A19
1
000
2
001, 010, 011
3
100, 101, 110
4
111
Secured Silicon Region Addresses
Device
Sector Size
(x8)
Address Range
(x16)
Address Range
S29JL064J
256 bytes
000000h–0000FFh
000000h–00007Fh
Document Number: 002-00856 Rev. *E
Page 15 of 59
S29JL064J
8.9
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes
output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be
programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system
through the command register.
When using programming equipment, the autoselect mode requires VID on address pin A9. Address pins must be as shown in
Table . In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits
(see Table on page 15). Table shows the remaining address bits that are don’t care. When all necessary bits have been set as
required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0. However, the autoselect
codes can also be accessed in-system through the command register, for instances when the S29JL064J is erased or programmed
in a system without access to high voltage on the A9 pin. The command sequence is illustrated in Table on page 31. Note that if a
Bank Address (BA) on address bits A21, A20, and A19 is asserted during the third write cycle of the autoselect command, the host
system can read autoselect data from that bank and then immediately read array data from another bank, without exiting the
autoselect mode.
To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown
in Table on page 31. This method does not require VID. Refer to Autoselect Command Sequence on page 27 for more information.
S29JL064J Autoselect Codes, (High Voltage Method)
A11
to
A10
A9
A8
to
A7
CE#
OE#
WE#
Manufacturer ID:
Spansion Products
L
L
H
BA
X
VID
X
L
L
H
BA
X
VID
X
Device ID
Description
A21
to
A12
Read Cycle 3
A0
BYTE#
= VIL
DQ7
to
DQ0
L
L
X
X
01h
L
L
H
22h
H
H
L
22h
H
H
A6
A3
A2
A1
L
X
L
L
L
X
H
H
H
L
Read Cycle 1
Read Cycle 2
DQ15 to DQ8
BYTE#
= VIH
A5
to
A4
L
L
7Eh
X
02h
22h
01h
Sector Protection
Verification
L
L
H
SA
X
VID
X
L
X
L
L
H
L
X
X
01h (protected),
00h (unprotected)
Secured Silicon
Indicator Bit (DQ6,
DQ7)
L
L
H
BA
X
VID
X
L
X
L
L
H
H
X
X
81h (Factory Locked),
41h (Customer
Locked),
01h (Not Locked)
Legend
L = Logic Low = VIL
H = Logic High = VIH
BA = Bank Address
SA = Sector Address
X = Don’t care.
Document Number: 002-00856 Rev. *E
Page 16 of 59
S29JL064J
8.10
Boot Sector/Sector Block Protection and Unprotection
Note: For the following discussion, the term sector applies to both boot sectors and sector blocks. A sector block consists of two or
more adjacent sectors that are protected or unprotected at the same time (see Table ).
The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection
feature re-enables both program and erase operations in previously protected sectors. Sector protection/unprotection can be
implemented via two methods.
S29JL064J Boot Sector/Sector Block Addresses for Protection/Unprotection (Sheet 1 of 2)
Sector
A21–A12
Sector/Sector Block Size
SA0
0000000000
8 kbytes
SA1
0000000001
8 kbytes
SA2
0000000010
8 kbytes
SA3
0000000011
8 kbytes
SA4
0000000100
8 kbytes
SA5
0000000101
8 kbytes
SA6
0000000110
8 kbytes
SA7
0000000111
8 kbytes
SA8–SA10
0000001XXX,
0000010XXX,
0000011XXX,
192 (3x64) kbytes
SA11–SA14
00001XXXXX
256 (4x64) kbytes
SA15–SA18
00010XXXXX
256 (4x64) kbytes
SA19–SA22
00011XXXXX
256 (4x64) kbytes
SA23–SA26
00100XXXXX
256 (4x64) kbytes
SA27-SA30
00101XXXXX
256 (4x64) kbytes
SA31-SA34
00110XXXXX
256 (4x64) kbytes
SA35-SA38
00111XXXXX
256 (4x64) kbytes
SA39-SA42
01000XXXXX
256 (4x64) kbytes
SA43-SA46
01001XXXXX
256 (4x64) kbytes
SA47-SA50
01010XXXXX
256 (4x64) kbytes
SA51-SA54
01011XXXXX
256 (4x64) kbytes
SA55–SA58
01100XXXXX
256 (4x64) kbytes
SA59–SA62
01101XXXXX
256 (4x64) kbytes
SA63–SA66
01110XXXXX
256 (4x64) kbytes
SA67–SA70
01111XXXXX
256 (4x64) kbytes
SA71–SA74
10000XXXXX
256 (4x64) kbytes
SA75–SA78
10001XXXXX
256 (4x64) kbytes
SA79–SA82
10010XXXXX
256 (4x64) kbytes
SA83–SA86
10011XXXXX
256 (4x64) kbytes
SA87–SA90
10100XXXXX
256 (4x64) kbytes
SA91–SA94
10101XXXXX
256 (4x64) kbytes
SA95–SA98
10110XXXXX
256 (4x64) kbytes
SA99–SA102
10111XXXXX
256 (4x64) kbytes
SA103–SA106
11000XXXXX
256 (4x64) kbytes
SA107–SA110
11001XXXXX
256 (4x64) kbytes
SA111–SA114
11010XXXXX
256 (4x64) kbytes
SA115–SA118
11011XXXXX
256 (4x64) kbytes
SA119–SA122
11100XXXXX
256 (4x64) kbytes
SA123–SA126
11101XXXXX
256 (4x64) kbytes
Document Number: 002-00856 Rev. *E
Page 17 of 59
S29JL064J
S29JL064J Boot Sector/Sector Block Addresses for Protection/Unprotection (Sheet 2 of 2)
Sector
A21–A12
Sector/Sector Block Size
SA127–SA130
11110XXXXX
256 (4x64) kbytes
SA131–SA133
1111100XXX,
1111101XXX,
1111110XXX
192 (3x64) kbytes
SA134
1111111000
8 kbytes
SA135
1111111001
8 kbytes
SA136
1111111010
8 kbytes
SA137
1111111011
8 kbytes
SA138
1111111100
8 kbytes
SA139
1111111101
8 kbytes
SA140
1111111110
8 kbytes
SA141
1111111111
8 kbytes
Sector Protect/Sector Unprotect requires VID on the RESET# pin only, and can be implemented either in-system or via programming
equipment. Figure 8.2 on page 20 shows the algorithms and Figure 17.13 on page 50 shows the timing diagram. For sector
unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. Note that the sector unprotect
algorithm unprotects all sectors in parallel. All previously protected sectors must be individually re-protected. To change data in
protected sectors efficiently, the temporary sector unprotect function is available. See Temporary Sector Unprotect on page 19.
The device is shipped with all sectors unprotected. Optional Spansion programming service enable programming and protecting
sectors at the factory prior to shipping the device. Contact your local sales office for details.
It is possible to determine whether a sector is protected or unprotected. See Autoselect Mode on page 16 for details.
8.11
Write Protect (WP#)
The Write Protect function provides a hardware method of protecting without using VID. This function is one of two provided by the
WP#/ACC pin.
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in sectors 0, 1, 140, and 141,
independently of whether those sectors were protected or unprotected using the method described in Boot Sector/Sector Block
Protection and Unprotection on page 17.
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether sectors 0, 1, 140, and 141 were last set to be protected
or unprotected. That is, sector protection or unprotection for these sectors depends on whether they were last protected or
unprotected using the method described in Boot Sector/Sector Block Protection and Unprotection on page 17.
Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result.
WP#/ACC Modes
WP# Input Voltage
Device Mode
VIL
Disables programming and erasing in SA0, SA1, SA140, and SA141
VIH
Enables programming and erasing in SA0, SA1, SA140, and SA141, dependent on whether they were last
protected or unprotected.
VHH
Enables accelerated programming (ACC). See Accelerated Program Operation on page 10.
Document Number: 002-00856 Rev. *E
Page 18 of 59
S29JL064J
8.12
Temporary Sector Unprotect
Note: For the following discussion, the term sector applies to both sectors and sector blocks. A sector block consists of two or more
adjacent sectors that are protected or unprotected at the same time (see Table on page 17).
This feature allows temporary unprotection of previously protected sectors to change data in-system. The Temporary Sector
Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or
erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are
protected again. Figure 8.1 shows the algorithm, and Figure 17.12 on page 49 shows the timing diagrams, for this feature. If the
WP#/ACC pin is at VIL, sectors 0, 1, 140, and 141 will remain protected during the Temporary sector Unprotect mode.
Figure 8.1 Temporary Sector Unprotect Operation
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected (If WP#/ACC = VIL, sectors 0, 1, 140, and 141 will remain protected).
2. All previously protected sectors are protected once again.
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Figure 8.2 In-System Sector Protect/Unprotect Algorithms
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 µs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 1 µs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 µs
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Reset
PLSCNT = 1
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Wait 15 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
No
Yes
Device failed
Protect another
sector?
No
PLSCNT
= 1000?
Yes
Remove VID
from RESET#
Device failed
Write reset
command
Sector Protect
Algorithm
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
Sector Protect
complete
Set up
next sector
address
No
Data = 00h?
Yes
Last sector
verified?
No
Yes
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
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8.13
Secured Silicon Region
The Secured Silicon Region feature provides a Flash memory region that enables permanent part identification through an
Electronic Serial Number (ESN). The Secured Silicon Region is 256 bytes in length, and may shipped unprotected, allowing
customers to utilize that sector in any manner they choose, or may shipped locked at the factory (upon customer request). The
Secured Silicon Indicator Bit data will be 81h if factory locked, 41h if customer locked, or 01h if neither. Refer to Table on page 16
for more details.
The system accesses the Secured Silicon Region through a command sequence (see Enter Secured Silicon Region/Exit Secured
Silicon Region Command Sequence on page 27). After the system has written the Enter Secured Silicon Region command
sequence, it may read the Secured Silicon Region by using the addresses normally occupied by the boot sectors. This mode of
operation continues until the system issues the Exit Secured Silicon Region command sequence, or until power is removed from the
device. On power-up, or following a hardware reset, the device reverts to sending commands to the first 256 bytes of Sector 0. Note
that the ACC function and unlock bypass modes are not available when the Secured Silicon Region is enabled.
8.13.1
Factory Locked: Secured Silicon Region Programmed and Protected At the
Factory
In a factory locked device, the Secured Silicon Region is protected when the device is shipped from the factory. The Secured Silicon
Region cannot be modified in any way. The device is preprogrammed with both a random number and a secure ESN. The 8-word
random number is at addresses 000000h–000007h in word mode (or 000000h–00000Fh in byte mode). The secure ESN is
programmed in the next 8 words at addresses 000008h–00000Fh (or 000010h–00001Fh in byte mode). The device is available
preprogrammed with one of the following:
 A random, secure ESN only
 Customer code through Spansion programming services
 Both a random, secure ESN and customer code through Spansion programming services
Contact an your local sales office for details on using Spansion programming services.
8.13.2
Customer Lockable: Secured Silicon Region NOT Programmed or Protected At
the Factory
If the security feature is not required, the Secured Silicon Region can be treated as an additional Flash memory space. The Secured
Silicon Region can be read any number of times, but can be programmed and locked only once. Note that the accelerated
programming (ACC) and unlock bypass functions are not available when programming the Secured Silicon Region.
 Write the three-cycle Enter Secured Silicon Region command sequence, and then follow the in-system sector protect algorithm as
shown in Figure 8.2 on page 20, except that RESET# may be at either VIH or VID. This allows in-system protection of the Secured
Silicon Region without raising any device pin to a high voltage. Note that this method is only applicable to the Secured Silicon
Region.
 To verify the protect/unprotect status of the Secured Silicon Region, follow the algorithm shown in Figure 8.3 on page 22.
Once the Secured Silicon Region is locked and verified, the system must write the Exit Secured Silicon Region command sequence
to return to reading and writing the remainder of the array.
The Secured Silicon Region lock must be used with caution since, once locked, there is no procedure available for unlocking the
Secured Silicon Region and none of the bits in the Secured Silicon Region memory space can be modified in any way.
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Figure 8.3 Secured Silicon Region Protect Verify
START
RESET# =
VIH or VID
Wait 1 ms
Write 60h to
any address
Write 40h to Secure
Silicon Region address
with A6 = 0,
A1 = 1, A0 = 0
Read from Secure
Silicon Region address
with A6 = 0,
A1 = 1, A0 = 0
8.14
If data = 00h,
Secure Silicon Region
is unprotected.
If data = 01h,
Secure Silicon Region
is protected.
Remove VIH or VID
from RESET#
Secured Silicon Region
exit command
Secure Silicon Region
Protect Verify
complete
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent
writes (refer to Table on page 31 for command definitions). In addition, the following hardware data protection measures prevent
accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and
power-down transitions, or from system noise.
8.14.1
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down.
The command register and all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent
unintentional writes when VCC is greater than VLKO.
8.14.2
Write Pulse Glitch Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
8.14.3
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be
a logical zero while OE# is a logical one.
8.14.4
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal
state machine is automatically reset to the read mode on power-up.
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9.
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows
specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be deviceindependent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors
can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or
address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses
given in Table on page 23 to Table on page 25. To terminate reading CFI data, the system must write the reset command.The CFI
Query mode is not accessible when the device is executing an Embedded Program or embedded Erase algorithm.
The system can also write the CFI query command when the device is in the autoselect mode via the command register only (high
voltage method does not apply). The device enters the CFI query mode, and the system can read CFI data at the addresses given in
Table on page 23 to Table on page 25. The system must write the reset command to return to reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100. Contact your local sales office for copies of
these documents.
CFI Query Identification String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Description
System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0003h
Typical timeout per single byte/word write 2N µs
20h
40h
0000h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
42h
0009h
Typical timeout per individual block erase 2N ms
22h
44h
000Fh
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0004h
Max. timeout for byte/word write 2N times typical
24h
48h
0000h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
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Device Geometry Definition
Addresses
(Word
Mode)
Addresses
(Byte Mode)
Data
27h
4Eh
0017h
Device Size = 2N byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to the CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
007Dh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
Description
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Primary Vendor-Specific Extended Query
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII (reflects modifications to the silicon)
44h
88h
0033h
Minor version number, ASCII (reflects modifications to the CFI table)
Description
45h
8Ah
000Ch
Address Sensitive Unlock (Bits 1-0)
0 = Required,
1 = Not Required
Process Technology (Bits 7-2)
0011 = 0.11 µm Floating Gate
46h
8Ch
0002h
Erase Suspend
0 = Not Supported,
1 = To Read Only,
2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported,
X = Number of sectors per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported,
01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
01 =29F040 mode,
02 = 29F016 mode,
03 = 29F400,
04 = 29LV800 mode
4Ah
94h
0077h
Simultaneous Operation
00 = Not Supported,
X = Number of Sectors (excluding Bank 1)
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported,
01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported,
01 = 4 Word Page,
02 = 8 Word Page
4Dh
9Ah
0085h
4Eh
9Ch
0095h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
4Fh
9Eh
0001h
50h
A0h
0000h
57h
AEh
0004h
58h
B0h
0017h
59h
B2h
0030h
00h = Uniform device,
01h = 8 x 8 kbyte Sectors, Top And Bottom Boot with Write Protect,
02h = Bottom Boot Device,
03h = Top Boot Device,
04h= Both Top and Bottom
Program Suspend
0 = Not supported, 1 = Supported
Bank Organization
Document Number: 002-00856 Rev. *E
00 = Data at 4Ah is zero,
X = Number of Banks
Bank 1 Region Information
X = Number of Sectors in Bank 1
Bank 2 Region Information
X = Number of Sectors in Bank 2
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Primary Vendor-Specific Extended Query
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
5Ah
B4h
0030h
5Bh
B6h
0017h
Description
Bank 3 Region Information
X = Number of Sectors in Bank 3
Bank 4 Region Information
X = Number of Sectors in Bank 4
10. Command Definitions
Writing specific address and data sequences into the command register initiates device operations. Table on page 31 defines the
valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place
the device in an unknown state. A reset command is then required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE#
or CE#, whichever happens first. Refer to AC Characteristics on page 42 for timing diagrams.
10.1
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. Each bank
is ready to read array data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspend-read mode, after which
the system can read data from any non-erase-suspended sector within the same bank. The system can read array data using the
standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After
completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same
exception. See Erase Suspend/Erase Resume Commands on page 30 for more information.
The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an
active program or erase operation, or if the bank is in the autoselect mode. See Reset Command on page 26 for more information.
See Requirements for Reading Array Data on page 10 for more information. Read-Only Operations on page 42 provides the read
parameters, and Figure 17.1 on page 42 shows the timing diagram.
10.2
Reset Command
Writing the reset command resets the banks to the read or erase-suspend-read mode. Address bits are don’t cares for this
command.
The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This
resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset
commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before programming begins.
This resets the bank to which the system was writing to the read mode. If the program command sequence is written to a bank that
is in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. Once programming
begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect
mode, the reset command must be written to return to the read mode. If a bank entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the bank to the read mode (or erasesuspend-read mode if that bank was in Erase Suspend). Please note that the RY/BY# signal remains low until this reset is issued.
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10.3
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or
not a sector is protected. The autoselect command sequence may be written to an address within a bank that is either in the read or
erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing in
another bank.
The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains
the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read any number of
autoselect codes without re-initiating the command sequence.
Table on page 31 shows the address and data requirements. To determine sector protection information, the system must write to
the appropriate bank address (BA) and sector address (SA). Table on page 15 shows the address range and bank number
associated with each sector.
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the bank was previously in
Erase Suspend).
10.4
Enter Secured Silicon Region/Exit Secured Silicon Region Command
Sequence
The system can access the Secured Silicon Region by issuing the three-cycle Enter Secured Silicon Region command sequence.
The device continues to access the Secured Silicon Region until the system issues the four-cycle Exit Secured Silicon Region
command sequence. The Exit Secured Silicon Region command sequence returns the device to normal operation. The Secured
Silicon Region is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. Table
on page 31 shows the address and data requirements for both command sequences. See also Secured Silicon Region on page 21 for
further information. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Region is
enabled.
10.5
Byte/Word Program Command Sequence
The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming is a four-bus-cycle
operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up
command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is
not required to provide further controls or timings. The device automatically provides internally generated program pulses and
verifies the programmed cell margin. Table on page 31 shows the address and data requirements for the byte program command
sequence.
When the Embedded Program algorithm is complete, that bank then returns to the read mode and addresses are no longer latched.
The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to Write Operation Status
on page 32 for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately
terminates the program operation. The program command sequence should be reinitiated once that bank has returned to the read
mode, to ensure data integrity. Note that the Secured Silicon Region, autoselect, and CFI functions are unavailable when a program
operation is in progress.
Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from 0 back to a 1.
Attempting to do so may cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was
successful. However, a succeeding read will show that the data is still 0. Only erase operations can convert a 0 to a 1.
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10.5.1
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to a bank faster than using the standard program command
sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle
containing the unlock bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock bypass program
command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass
program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same
manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in
faster total programming time. Table on page 31 shows the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock
bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. (See Table on page 31).
The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin,
the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program
command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC
pin must not be at VHH for any operation other than accelerated programming, or device damage may result. In addition, the WP#/
ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result.
Figure 10.1 on page 28 illustrates the algorithm for the program operation. Refer to Erase and Program Operations on page 45 for
parameters, and Figure 17.5 on page 46 for timing diagrams.
Figure 10.1 Program Operation
START
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note:
1. See Table on page 31 for program command sequence.
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10.6
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a
set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the
Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not
required to provide any controls or timings during these operations. Table on page 31 shows the address and data requirements for
the chip erase command sequence.
When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no longer latched. The
system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to Write Operation Status
on page 32 for information on these status bits.
Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates
the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that bank has returned to reading
array data, to ensure data integrity. Note that the Secured Silicon Region, autoselect, and CFI functions are unavailable when an
erase operation is in progress.
Figure 10.2 on page 30 illustrates the algorithm for the erase operation. Refer to Erase and Program Operations on page 45 for
parameters, and Figure 17.7 on page 47 for timing diagrams.
10.7
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by
a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Table on page 31 shows the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and
verifies the entire sector for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or
timings during these operations.
After the command sequence is written, a sector erase time-out of 50 µs occurs. During the time-out period, additional sector
addresses and sector erase commands may be written. However, these additional erase commands are only one bus cycle long
and should be identical to the sixth cycle of the standard erase command explained above. Loading the sector erase buffer may be
done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles
must be less than 50 µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out
may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are
accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If any command other than 30h, B0h,
F0h is input during the time-out period, the normal operation will not be guaranteed. The system must rewrite the command
sequence and any additional addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer.).
The time-out begins from the rising edge of the final WE# or CE# pulse (first rising edge) in the command sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note
that while the Embedded Erase operation is in progress, the system can read data from the non-erasing bank. The system can
determine the status of the erase operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to Write Operation
Status on page 32 for information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However,
note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should
be reinitiated once that bank has returned to reading array data, to ensure data integrity. Note that the Secured Silicon Region,
autoselect, and CFI functions are unavailable when an erase operation is in progress.
Figure 10.2 on page 30 illustrates the algorithm for the erase operation. Refer to Erase and Program Operations on page 45 for
parameters, and Figure 17.7 on page 47 for timing diagrams.
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Figure 10.2 Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table on page 31 for erase command sequence.
2. See the section on DQ3 for information on the sector erase timer.
10.8
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program
data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only
during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase
Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. The bank address must
contain one of the sectors currently selected for erase.
When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 35 µs to
suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device
immediately terminates the time-out period and suspends the erase operation.
After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or
program data to any sector not selected for erasure. (The device erase suspends all sectors selected for erasure.) It is not
recommended to program the Secured Silicon Region after an erase suspend, as proper device functionality cannot be guaranteed.
Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to Write Operation Status
on page 32 for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can
determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard Byte Program operation.
Refer to Write Operation Status on page 32 for more information.
In the erase-suspend-read mode, the system can also issue the autoselect command sequence. The device allows reading
autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device
exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. Refer to
Autoselect Mode on page 16 and Autoselect Command Sequence on page 27 for details.
To resume the sector erase operation, the system must write the Erase Resume command. The bank address of the erasesuspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase
Suspend command can be written after the chip has resumed erasing.
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S29JL064J
Cycles
S29JL064J Command Definitions
Command
Sequence
(Note 1)
Bus Cycles (Notes 2–5)
First
Second
Addr
Data
Read (Note 6)
1
RA
RD
Reset (Note 7)
1
XXX
F0
Autoselect (Note 8)
Manufacturer ID
Device ID (Note 9)
Word
Byte
Word
Byte
Word
Secured Silicon Region
Factory Protect (Note 10) Byte
Boot Sector/Sector Block
Protect Verify
(Note 11)
Enter Secured Silicon Region
Exit Secured Silicon Region
Program
Unlock Bypass
4
6
4
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
555
AAA
555
AAA
555
AAA
AA
AA
AA
555
4
3
4
4
3
AAA
555
AAA
555
AAA
555
AAA
555
AAA
Addr
2AA
555
2AA
555
2AA
555
Data
55
55
55
2AA
AA
AA
AA
AA
AA
555
2AA
555
2AA
555
2AA
555
2AA
555
55
55
55
55
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 13)
2
XXX
90
XXX
00
Sector Erase (Note 17)
Word
Byte
Word
Byte
6
6
555
AAA
555
AAA
AA
AA
Erase Suspend (Note 14)
1
BA
B0
Erase Resume (Note 15)
1
BA
30
CFI Query (Note 16)
Word
Byte
1
55
AA
2AA
555
2AA
555
Addr
(BA)555
(BA)AAA
(BA)555
(BA)AAA
(BA)555
(BA)AAA
Fourth
55
55
(BA)AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
Fifth
Data
Addr
Data
90
(BA)X00
01
90
90
(BA)555
55
Unlock Bypass Program (Note 12)
Chip Erase
Third
(BA)X01
(BA)X02
(BA)X03
(BA)X06
7E
Addr
(BA)X0E
(BA)X1C
Sixth
Data
02
Addr
(BA)X0F
(BA)X1E
Data
01
81/41/
01
(SA)X02
90
(SA)X04
00/01
88
90
XXX
00
A0
PA
PD
20
80
80
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
55
55
555
AAA
SA
10
30
98
Legend
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A21–A12 uniquely select any sector. Refer to Table on page 15 for information on
sector addresses.
BA = Address of the bank that is being switched to autoselect mode, is in bypass mode, or is being erased. A21–A19 uniquely select a bank.
Notes:
1. See Table on page 9 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth, fifth, and sixth cycle of the autoselect command sequence, all bus cycles are write cycles.
4. Data bits DQ15–DQ8 are don’t care in command sequences, except for RD and PD.
5. Unless otherwise noted, address bits A21–A11 are don’t cares for unlock and command cycles, unless SA or PA is required.
6. No unlock or command cycles required when bank is reading array data.
7. The Reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in Erase Suspend) when a bank is in the autoselect
mode, or if DQ5 goes high (while the bank is providing status information).
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S29JL064J
8. The fourth cycle of the autoselect command sequence is a read cycle. The system must provide the bank address to obtain the manufacturer ID, device ID, or Secured
Silicon Region factory protect information. Data bits DQ15–DQ8 are don’t care. While reading the autoselect addresses, the bank address must be the same until a
reset command is given. See Autoselect Command Sequence on page 27 for more information.
9. The device ID must be read across the fourth, fifth, and sixth cycles.
10. The data is 81h for factory locked, 41h for customer locked, and 01h for not factory/customer locked.
11. The data is 00h for an unprotected sector/sector block and 01h for a protected sector/sector block.
12. The Unlock Bypass command is required prior to the Unlock Bypass Program command.
13. The Unlock Bypass Reset command is required to return to the read mode when the bank is in the unlock bypass mode.
14. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid
only during a sector erase operation, and requires the bank address.
15. The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address.
16. Command is valid when device is ready to read array data or when device is in autoselect mode.
17. Additional sector erase commands during the time-out period after an initial sector erase are one cycle long and identical to the sixth cycle of
the sector erase command sequence (SA / 30).
11. Write Operation Status
The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table
on page 37 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining
whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/
BY#, to determine whether an Embedded Program or Erase operation is in progress or has been completed.
11.1
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or
completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command
sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7
status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs
the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program
address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to the read
mode.
During the Embedded Erase algorithm, Data# Polling produces a 0 on DQ7. When the Embedded Erase algorithm is complete, or if
the bank enters the Erase Suspend mode, Data# Polling produces a 1 on DQ7. The system must provide an address within any of
the sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for
approximately 3 ms, then the bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an
address within a protected sector, the status may not be valid.
When the system detects DQ7 has changed from the complement to true data, it can read valid data at DQ15–DQ0 (or DQ7–DQ0
for x8-only device) on the following read cycles. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may
change asynchronously with DQ15–DQ8 (DQ7–DQ0 for x8-only device) while Output Enable (OE#) is asserted low. That is, the
device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7
output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid
data, the data outputs on DQ15–DQ0 may be still invalid. Valid data on DQ15–DQ0 (or DQ7–DQ0 for x8-only device) will appear on
successive read cycles.
Table on page 37 shows the outputs for Data# Polling on DQ7. Figure 11.1 on page 33 shows the Data# Polling algorithm.
Figure 17.9 on page 48 shows the Data# Polling timing diagram.
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S29JL064J
Figure 11.1 Data# Polling Algorithm
34!24
2EADå$1n$1
!DDRåå6!
$1åå$ATA
9ES
.O
.O
$1åå
9ES
2EADå$1n$1
!DDRåå6!
$1åå$ATA
9ES
.O
&!),
0!33
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5.
11.2
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The
RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output,
several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.)
If the output is high (Ready), the device is in the read mode, the standby mode, or one of the banks is in the erase-suspend-read
mode.
Table on page 37 shows the outputs for RY/BY#.
When DQ5 is set to “1”, RY/BY# will be in the BUSY state, or “0”.
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S29JL064J
11.3
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device
has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE#
pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The
system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 3 ms,
then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the
device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase
Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erasesuspended. Alternatively, the system can use DQ7 (see DQ7: Data# Polling on page 32).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is
written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete.
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Figure 11.2 Toggle Bit Algorithm
START
Read Byte
(DQ7–DQ0)
Address =VA
Read Byte
(DQ7–DQ0)
Address =VA
Toggle Bit
= Toggle?
No
Yes
No
DQ5 = 1?
Yes
Read Byte Twice
(DQ7–DQ0)
Address = VA
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note:
The system should recheck the toggle bit even if DQ5 = 1 because the toggle bit may stop toggling as DQ5 changes to 1. See the subsections on DQ6 and DQ2 for more
information.
11.4
DQ2: Toggle Bit II
The Toggle Bit II on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded
Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE#
pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use
either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erasesuspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish
which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table
on page 37 to compare outputs for DQ2 and DQ6.
Figure 11.2 on page 35 shows the toggle bit algorithm in flowchart form, and DQ2: Toggle Bit II on page 35 explains the algorithm.
See also DQ6: Toggle Bit I on page 34. Figure 17.10 on page 48 shows the toggle bit timing diagram. Figure 17.11 on page 49
shows the differences between DQ2 and DQ6 in graphical form.
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S29JL064J
11.5
Reading Toggle Bits DQ6/DQ2
Refer to Figure 11.2 on page 35 for the following discussion. Whenever the system initially begins reading toggle bit status, it must
read DQ15–DQ0 (or DQ7–DQ0 for x8-only device) at least twice in a row to determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new
value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The
system can read array data on DQ15–DQ0 (or DQ7–DQ0 for x8-only device) on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note
whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is
toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has
successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully,
and the system must write the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system
may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous
paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the operation (top of Figure 11.2 on page 35).
11.6
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5
produces a 1, indicating that the program or erase cycle was not successfully completed.
The device may output a 1 on DQ5 if the system tries to program a 1 to a location that was previously programmed to 0. Only an
erase operation can change a 0 back to a 1. Under this condition, the device halts the operation, and when the timing limit has
been exceeded, DQ5 produces a 1.
Under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read
mode if a bank was previously in the erase-suspend-program mode).
11.7
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The
sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also
applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a 0 to a 1. If the time
between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor
DQ3. See also Sector Erase Command Sequence on page 29.
After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure
that the device has accepted the command sequence, and then read DQ3. If DQ3 is 1, the Embedded Erase algorithm has begun;
all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is 0, the device will accept
additional sector erase commands. To ensure the command has been accepted, the system software should check the status of
DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command
might not have been accepted. The RDY/BSY# pin will be in the BUSY state under this condition.
Table on page 37 shows the status of DQ3 relative to the other status bits.
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S29JL064J
Write Operation Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
DQ7#
Toggle
0
N/A
No toggle
0
in busy erasing sector
0
Toggle
0
1
Toggle
0
in not busy erasing
sector
0
Toggle
0
1
No toggle
0
Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Status
Embedded Program Algorithm
Standard
Mode
Erase
Suspend
Mode
Embedded Erase
Algorithm
Erase-Suspend-Read
Non-Erase Suspended
Sector
Erase-Suspend-Program
RY/BY#
Notes:
1. DQ5 switches to 1 when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more
information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in progress. The device outputs array
data if the system addresses a non-busy bank.
12. Absolute Maximum Ratings
Storage Temperature, Plastic Packages
–65°C to +150°C
Ambient Temperature with Power Applied
–65°C to +125°C
Voltage with Respect to Ground
VCC (Note 1)
–0.5V to +4.0V
A9 and RESET# (Note 2)
–0.5V to +12.5V
WP#/ACC
–0.5V to +9.5V
–0.5V to VCC +0.5V
All other pins (Note 1)
Output Short Circuit Current (Note 3)
200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5V. During voltage transitions, input or I/O pins may overshoot VSS to –2.0V for periods of up to 20 ns. Maximum DC
voltage on input or I/O pins is VCC +0.5V. See Figure 12.1 on page 37. During voltage transitions, input or I/O pins may overshoot to VCC +2.0V for periods up to 20 ns.
See Figure 12.2 on page 38.
2. Minimum DC input voltage on pins A9, OE#, RESET#, and WP#/ACC is –0.5V. During voltage transitions, A9, OE#, WP#/ACC, and RESET# may overshoot VSS to –
2.0V for periods of up to 20 ns. See Figure 12.1 on page 37. Maximum DC input voltage on pin A9 is +12.5V which may overshoot to +14.0V for periods up to 20 ns.
Maximum DC input voltage on WP#/ACC is +9.5V which may overshoot to +12.0V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum
rating conditions for extended periods may affect device reliability.
Figure 12.1 Maximum Negative Overshoot Waveform
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
20 ns
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S29JL064J
Figure 12.2 Maximum Positive Overshoot Waveform
20 ns
VCC +2.0 V
VCC +0.5 V
2.0 V
20 ns
20 ns
13. Operating Ranges
Industrial (I) Devices
Ambient Temperature (TA)
VCC Supply Voltages
VCC for standard voltage range
–40°C to +85°C
2.7V to 3.6V
Operating ranges define those limits between which the functionality of the device is guaranteed.
14. DC Characteristics
14.1
Parameter
Symbol
CMOS Compatible
Parameter Description
Test Conditions
Min
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9 and RESET# Input Load Current
VCC = VCC max, OE# = VIH; A9 or
RESET# = 12.5V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max, OE# = VIH
ILR
Reset Leakage Current
VCC = VCC max; RESET# = 12.5V
Typ
Max
Unit
1.0
µA
35
µA
1.0
µA
35
µA
CE# = VIL, OE# = VIH, Byte
Mode
5 MHz
10
16
1 MHz
2
4
CE# = VIL, OE# = VIH, Word
Mode
5 MHz
10
16
mA
ICC1
VCC Active Read Current (Notes 1, 2)
2
4
ICC2
VCC Active Write Current (Notes 2, 3)
CE# = VIL, OE# = VIH, WE# = VIL
15
30
mA
ICC3
VCC Standby Current (Note 2)
CE#, RESET# = VCC 0.3V
0.2
5
µA
ICC4
VCC Reset Current (Note 2)
RESET# = VSS 0.3V
0.2
5
µA
ICC5
Automatic Sleep Mode (Notes 2, 4)
VIH = VCC  0.3V;
VIL = VSS 0.3V
0.2
5
µA
ICC6
VCC Active Read-While-Program Current (2)
ICC7
VCC Active Read-While-Erase Current (2)
ICC8
VCC Active Program-While-Erase-Suspended Current
(Notes 2, 5)
1 MHz
CE# = VIL,
Byte
21
45
OE# = VIH, 1 MHz
Word
21
45
CE# = VIL,
Byte
21
45
OE# = VIH, 1 MHz
Word
21
45
17
35
mA
CE# = VIL, OE# = VIH
mA
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
V
VHH
Voltage for WP#/ACC Sector Protect/Unprotect and
Program Acceleration
8.5
9.5
V
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VCC = 3.0V ± 10%
Page 38 of 59
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Parameter
Symbol
Parameter Description
Test Conditions
VID
Voltage for Autoselect and Temporary Sector
Unprotect
VOL
Output Low Voltage
VOH1
VCC = 3.0V  10%
8.5
IOH = –2.0 mA, VCC = VCC min
0.85 VCC
IOH = –100 µA, VCC = VCC min
VCC–0.4
Low VCC Lock-Out Voltage (Note 5)
VLKO
Typ
IOL = 2.0 mA, VCC = VCC min
Output High Voltage
VOH2
Min
1.8
Max
Unit
12.5
V
0.45
V
V
2.0
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA.
5. Not 100% tested.
14.2
Zero-Power Flash
Figure 14.1 ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
Supply Current in mA
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note:
Addresses are switching at 1 MHz
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Figure 14.2 Typical ICC1 vs. Frequency
12
3.6V
10
2.7V
Supply Current in mA
8
6
4
2
0
1
2
3
4
5
Frequency in MHz
Note:
T = 25°C
15. Test Conditions
Figure 15.1 Test Setup
Device
Under
Test
CL
Test Specifications
Test Condition
Output Load Capacitance, CL
Input Rise and Fall Times (Note 1)
55, 60
70
Unit
30
100
pF
5
ns
0.0 or VCC
V
Input timing measurement reference levels
0.5 VCC
V
Output timing measurement reference levels
0.5 VCC
V
Input Pulse Levels
Document Number: 002-00856 Rev. *E
Page 40 of 59
S29JL064J
Note:
1. Input rise and fall times are 0-100%.
16. Key To Switching Waveforms
Waveform
Inputs
Outputs
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High-Z)
Figure 16.1 Input Waveforms and Measurement Levels
3.0V
Input
1.5V
Measurement Level
1.5V
Output
0.0V
Document Number: 002-00856 Rev. *E
Page 41 of 59
S29JL064J
17. AC Characteristics
17.1
Read-Only Operations
Parameter
JEDEC
Std.
tAVAV
tRC
tAVQV
Speed Options
Description
Test Setup
Read Cycle Time (Note 1)
tACC
Address to Output Delay
CE#,
OE# = VIL
OE# = VIL
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
Output Enable to Output Delay
55
60
70
Unit
Min
55
60
70
ns
Max
55
60
70
ns
Max
55
Max
60
25
70
ns
30
ns
tEHQZ
tDF
Chip Enable to Output High-Z (Notes 1, 3)
Max
16
ns
tGHQZ
tDF
Output Enable to Output High-Z (Notes 1, 3)
Max
16
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
Output Enable Hold Time
(Note 1)
Read
Min
0
ns
tOEH
Toggle and
Data# Polling
Min
5
10
ns
Notes:
1. Not 100% tested.
2. See Figure 15.1 on page 40 and Table on page 40 for test specifications
3. Measurements performed by placing a 50 ohm termination on the data pin with a bias of VCC/2. The time from OE# high to the data bus driven to VCC/2 is taken as tDF.
Figure 17.1 Read Operation Timings
tRC
Addresses Stable
Addresses
tACC
CE#
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
High-Z
High-Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Document Number: 002-00856 Rev. *E
Page 42 of 59
S29JL064J
17.2
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed Options
Unit
Max
35
µs
RESET# Pin Low (NOT During Embedded Algorithms) to
Read Mode (See Note)
Max
500
ns
ns
tReady
RESET# Pin Low (During Embedded Algorithms) to Read
Mode (See Note)
tReady
tRP
RESET# Pulse Width
Min
500
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
35
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note:
Not 100% tested.
Figure 17.2 Reset Timings
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Document Number: 002-00856 Rev. *E
Page 43 of 59
S29JL064J
17.3
Word/Byte Configuration (BYTE#)
Parameter
JEDEC
Speed Options
Std.
Description
tELFL/tELFH
55
60
70
Unit
CE# to BYTE# Switching Low or High
Max
5
ns
tFLQZ
BYTE# Switching Low to Output High-Z
Max
16
ns
tFHQV
BYTE# Switching High to Output Active
Min
55
60
70
ns
Figure 17.3 BYTE# Timings for Read Operations
CE#
OE#
BYTE#
BYTE#
Switching
from word
to byte
tELFL
DQ14–DQ0
Data Output
(DQ14–DQ0)
DQ15
Output
DQ15/A-1
Data Output
(DQ7–DQ0)
Address
Input
tFLQZ
tELFH
BYTE#
BYTE#
Switching
from byte
to word
mode
DQ14–DQ0
Data
DQ15/A-1
Address
Input
Data Output
(DQ14–DQ0)
DQ15
Output
tFHQV
Figure 17.4 BYTE# Timings for Write Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS)
tHOLD (tAH)
Note:
Refer to the Erase/Program Operations table for tAS and tAH specifications.
Document Number: 002-00856 Rev. *E
Page 44 of 59
S29JL064J
17.4
Erase and Program Operations
Parameter
Speed Options
JEDEC
Std
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tAH
Address Hold Time
Min
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
tDVWH
tDS
Data Setup Time
Min
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
tWLWH
tWP
Write Pulse Width
Min
25
25
30
tWPH
Write Pulse Width High
Min
25
25
30
tSR/W
Latency Between Read and Write Operations
Min
tWLAX
tWHDL
Description
55
60
70
Unit
55
60
70
ns
30
35
40
0
30
35
ns
40
0
0
ns
ns
ns
ns
ns
ns
Byte
Typ
6
Word
Typ
6
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
µs
Sector Erase Operation (Note 2)
Typ
0.5
sec
tWHWH1
tWHWH1
Programming Operation (Note 2)
tWHWH1
tWHWH1
tWHWH2
tWHWH2
µs
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Max
90
ns
Erase Suspend Latency
Max
35
µs
tBUSY
tESL
Notes:
1. Not 100% tested.
2. See Erase and Programming Performance on page 52 for more information.
Document Number: 002-00856 Rev. *E
Page 45 of 59
S29JL064J
Figure 17.5 Program Operation Timings
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
A0h
Data
PD
Status
tBUSY
DOUT
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17.6 Accelerated Program Timing Diagram
VHH
WP#/ACC
VIL or VIH
VIL or VIH
tVHH
Document Number: 002-00856 Rev. *E
tVHH
Page 46 of 59
S29JL064J
Figure 17.7 Chip/Sector Erase Operation Timings
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 32).
2. These waveforms are for the word mode.
Figure 17.8 Back-to-back Read/Write Cycle Timings
Addresses
tWC
tWC
tRC
Valid PA
Valid RA
tWC
Valid PA
Valid PA
tAH
tCPH
tACC
tCE
CE#
tCP
tOE
OE#
tOEH
tGHWL
tWP
WE#
tWPH
tDF
tDS
tOH
tDH
Data
Valid
Out
Valid
In
Valid
In
Valid
In
tSR/W
WE# Controlled Write Cycle
Document Number: 002-00856 Rev. *E
Read Cycle
CE# or CE2# Controlled Write Cycles
Page 47 of 59
S29JL064J
Figure 17.9 Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
Status Data
Status Data
Valid Data
True
High Z
DQ0–DQ6
Valid Data
True
tBUSY
RY/BY#
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle
Figure 17.10 Toggle Bit Timings (During Embedded Algorithms)
tAHT
tAS
Addresses
tAHT
tASO
CE#
tCPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
Valid Data
tOE
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
RY/BY#
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle.
Document Number: 002-00856 Rev. *E
Page 48 of 59
S29JL064J
Figure 17.11 DQ2 vs. DQ6
Enter
Embedded
Erasing
Erase
Suspend
Erase
Resume
Erase
Suspend
Program
Erase Suspend
Read
Erase
WE#
Enter Erase
Suspend Program
Erase Suspend
Read
Erase
Complete
Erase
DQ6
DQ2
Note:
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6.
17.5
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
ns
tVIDR
VID Rise and Fall Time (See Note)
Min
500
tVHH
VHH Rise and Fall Time (See Note)
Min
250
ns
tRSP
RESET# Setup Time for Temporary Sector Unprotect
Min
4
µs
tRRB
RESET# Hold Time from RY/BY# High for Temporary
Sector Unprotect
Min
4
µs
Note:
Not 100% tested.
Figure 17.12 Temporary Sector Unprotect Timing Diagram
VID
RESET#
VID
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
tRRB
RY/BY#
Document Number: 002-00856 Rev. *E
Page 49 of 59
S29JL064J
Figure 17.13 Sector/Sector Block Protect and Unprotect Timing Diagram
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Group Protect/Unprotect
Data
60h
Valid*
Verify
60h
40h
Status
1 µs
Sector Group Protect: 150 µs
Sector Group Unprotect: 15 ms
CE#
WE#
OE#
Note:
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
17.6
Alternate CE# Controlled Erase and Program Operations
Parameter
Speed Options
JEDEC
Std.
Description
55
tAVAV
tWC
Write Cycle Time (Note 1)
60
70
Unit
55
60
70
ns
tAVWL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
30
35
40
ns
tDVEH
tDS
tEHDX
tDH
Data Setup Time
Min
30
35
40
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
ns
Min
0
ns
ns
tWLEL
tWS
WE# Setup Time
Min
0
tEHWH
tWH
WE# Hold Time
Min
0
tELEH
tCP
CE# Pulse Width
Min
25
25
40
ns
tEHEL
tCPH
CE# Pulse Width High
Min
25
25
30
ns
Byte
Typ
6
Word
Typ
6
ns
tWHWH1
tWHWH1
Programming Operation
(Note 2)
tWHWH1
tWHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
µs
Notes:
1. Not 100% tested.
2. See Erase and Programming Performance on page 52 for more information.
Document Number: 002-00856 Rev. *E
Page 50 of 59
S29JL064J
Figure 17.14 Alternate CE# Controlled Write (Erase/Program) Operation Timings
PA for program
SA for sector erase
555 for chip erase
555 for program
2AA for erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
Document Number: 002-00856 Rev. *E
Page 51 of 59
S29JL064J
18. Erase and Programming Performance
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
Parameter
0.5
5
sec
Chip Erase Time
71
Excludes 00h programming
prior to erasure (Note 3)
Byte Program Time
6
sec
80
µs
Word Program Time
6
80
µs
Accelerated Byte/Word Program Time
4
70
µs
Excludes system level
overhead (Note 4)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0V VCC, 100,000 cycles; checkerboard data pattern.
2. Under worst case conditions of 90°C, VCC = 2.7V, 1,000,000 cycles.
3. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
4. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table on page 31 for further information on
command definitions.
5. The device has a minimum program and erase cycle endurance of 100,000 cycles per sector.
19. Pin Capacitance
Parameter Symbol
Parameter Description
Test Setup
Max
Unit
CIN
Input Capacitance (applies to A21-A0, DQ15-DQ0)
VIN = 0
8.5
pF
COUT
Output Capacitance (applies to DQ15-DQ0, RY/BY#)
VOUT = 0
5.5
pF
CIN2
Control Pin Capacitance
(applies to CE#, WE#, OE#, WP#/ACC, RESET#, BYTE#)
VIN = 0
12
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Document Number: 002-00856 Rev. *E
Page 52 of 59
S29JL064J
20. Physical Dimensions
20.1
TS 048—48-Pin Standard TSOP
PACKAGE
TS/TSR 48
JEDEC
MO-142 (D) DD
NOTES:
SYMBOL
MIN
NOM
MAX
A
---
---
1.20
A1
0.05
---
0.15
A2
0.95
1.00
1.05
b1
0.17
0.20
0.23
b
0.17
0.22
0.27
c1
0.10
---
0.16
c
0.10
---
0.21
D
19.80
20.00
20.20
D1
18.30
18.40
18.50
E
11.90
12.00
12.10
e
L
0.50 BASIC
0.50
0.60
Θ
0˚
---
8
R
0.08
---
0.20
N
48
Document Number: 002-00856 Rev. *E
1.
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORM TO ANSI Y14.5M-1982)
2.
PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP).
3.
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN): INK OR LASER MARK.
4.
TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS
DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE LEADS
ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE.
5.
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD
PROTUSION IS 0.15mm (.0059") PER SIDE.
6.
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR
PROTUSION SHALL BE 0.08mm (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX.
MATERIAL CONDITION. MINIMUM SPACE BETWEEN PROTRUSION AND AN ADJACENT
LEAD TO BE 0.07mm (0.0028").
7.
THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN
0.10mm (.0039") AND 0.25mm (0.0098") FROM THE LEAD TIP.
8.
LEAD COPLANARITY SHALL BE WITHIN 0.10mm (0.004") AS MEASURED FROM
THE SEATING PLANE.
9.
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
0.70
3664 \ f16-038.10 \ 11.6.7
Page 53 of 59
S29JL064J
20.2
VBK048—48-Pin FBGA
NOTES:
PACKAGE
VBK 048
JEDEC
N/A
8.15 mm x 6.15 mm NOM
PACKAGE
SYMBOL
1.
DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
MIN
NOM
MAX
NOTE
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
A
---
---
1.00
OVERALL THICKNESS
5.
A1
0.18
---
---
SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
BALL HEIGHT
D
8.15 BSC.
BODY SIZE
E
6.15 BSC.
BODY SIZE
D1
5.60 BSC.
BALL FOOTPRINT
E1
4.00 BSC.
BALL FOOTPRINT
MD
8
ROW MATRIX SIZE D DIRECTION
ME
6
ROW MATRIX SIZE E DIRECTION
N
φb
48
0.33
---
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
TOTAL BALL COUNT
0.43
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
BALL DIAMETER
e
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
---
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
DEPOPULATED SOLDER BALLS
8.
NOT USED.
9.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
g1001.2 \ f16-038.25 \ 07.13.10
Document Number: 002-00856 Rev. *E
Page 54 of 59
S29JL064J
21. Revision History
Spansion Publication Number: S29JL064J_00
.
Section
Description
Revision 01 (June 21, 2010)
Initial revision.
Revision 02 (September 1, 2010)
Global
Updated the data sheet designation from Advanced Information to Preliminary.
Corrected spelling, capitalization, and grammatical errors.
Simultaneous Read/Write Operations
with Zero Latency
Added clarification that JL064J is only offered as a dual boot device with both top and bottom boot
sectors.
Ordering Information
Clarified that Note 1 applies to the Packing Type column.
Device Bus Operation
The note for the Addresses column should be Note 1, not Note 2.
RESET#: Hardware Reset Pin
Changed “Refer to AC Characteristics on page 46” to “Refer to Hardware Reset (RESET#) on page
47”.
Clarified the Secured Silicon Indicator Bit data based on factory and customer lock status.
Secured Silicon Region
Removed forward looking statements regarding factory locking features as they are supported in
this device.
Common Flash Memory Interface (CFI)
Clarified that once in the CFI query mode, the system must write the reset command to return to
reading array data.
Enter Secured Silicon Region/Exit
Secured Silicon Region Command
Sequence
Removed the incorrect generalizing statement that the Secured Silicon Region always contains an
ESN.
Erase Suspend/Erase Resume
Commands
Erase and Programming Performance
Added clarification that “It is not recommended to program the Secured Silicon Region after an
erase suspend, as proper device functionality cannot be guaranteed.”
In Table 10.1, corrected the Secured Silicon Region Factory Protect fourth cycle data from 81/01 to
81/41/01.
Added Note 5 regarding minimum program and erase cycle endurance.
Changed section title from “TSOP Pin Capacitance” to “Pin Capacitance”.
Pin Capacitance
Updated values to reflect maximum capacitances for both TSOP and BGA.
Removed typical capacitance values.
Added specific pin clarifications to parameter descriptions.
Physical Dimensions
Updated the VBK048 package outline drawing.
Revision 03 (April 7, 2011)
Global
Updated the data sheet designation from Preliminary to Full Production (no designation on
document).
RESET#: Hardware Reset Pin
Added warning that keeping CE# at VIL from power up through the first reset could cause
erroneuous data on the first read.
Reset Command
Clarified that during an embedded program or erase, if DQ5 goes high then RY/BY# will remain low
until a reset is issued
Absolute Maximum Ratings
Corrected the maximum value of WP#/ACC voltage with respect to ground from +10.5V to +9.5V
DC Characteristics
Corrected voltage for autoselect and temporary sector unprotect (VID) minimum value from 11.5V to
8.5V
Test Conditions
Changed the format of the input pulse levels and input and output timing measurement reference
levels to match the JL032J data sheet format
Hardware Reset (RESET#)
Added note to “Reset Timings” figure clarifying that CE# should only go low after RESET# has gone
high.
Document Number: 002-00856 Rev. *E
Page 55 of 59
S29JL064J
Section
Description
Revision 04 (August 24, 2011)
RESET#: Hardware Reset Pin
Removed warning that keeping CE# at VIL from power up through the first reset could cause
erroneuous data on the first read.
Sector Erase Command Sequence
Added clarification regarding additional sector erase commands during time-out period.
Command Definitions Table
Added Note 17 to clarify additional sector erase commands during time-out period.
Hardware Reset (RESET#)
Removed note to the “Reset Timings” figure clarifying that CE# should only go low after RESET#
has gone high.
Erase and Programming Performance
Updated Byte Program Time and Word Program Time to 80 µs.
Physical Dimensions
Package drawings updated to latest version.
Revision 05 (December 16, 2011)
Global
Corrected all references in the text to the sector erase time-out period from 80 µs to 50 µs.
Document History Page
Document Title:S29JL064J 64 Mbit (8M x 8-Bit/4M x 16-Bit), 3 V, Simultaneous Read/Write Flash
Document Number: 002-00856
Rev.
ECN No.
Orig. of
Change
**
-
RYSU
Submission
Date
Description of Change
06/21/2010 Initial release
Document Number: 002-00856 Rev. *E
Page 56 of 59
S29JL064J
Document History Page (Continued)
Document Title:S29JL064J 64 Mbit (8M x 8-Bit/4M x 16-Bit), 3 V, Simultaneous Read/Write Flash
Document Number: 002-00856
Rev.
ECN No.
Orig. of
Change
*A
-
RYSU
Submission
Date
Description of Change
09/01/2010 Global
Updated the data sheet designation from Advanced Information to
Preliminary.Corrected spelling, capitalization, and grammatical errors.
Simultaneous Read/Write Operations with Zero Latency
Added clarification that JL064J is only offered as a dual boot device with
both top and bottom boot sectors.
Ordering Information Clarified that Note 1 applies to the Packing Type
column.
Device Bus Operation The note for the Addresses column should be Note
1, not Note 2.
RESET#: Hardware Reset Pin
Changed “Refer to AC Characteristics on page 46” to “Refer to Hardware
Reset (RESET#) on page 47”.
Secured Silicon Region
Clarified the Secured Silicon Indicator Bit data based on factory and
customer lock status.
Removed forward looking statements regarding factory locking features as
they are supported in this device.
Common Flash Memory Interface (CFI)
Clarified that once in the CFI query mode, the system must write the reset
command to return to reading array data.
Enter Secured Silicon Region/Exit Secured Silicon Region Command
Sequence
Removed the incorrect generalizing statement that the Secured Silicon
Region always contains an ESN.
Erase Suspend/Erase Resume Commands
Added clarification that “It is not recommended to program the Secured
Silicon Region after an erase suspend, as proper device functionality
cannot be guaranteed.”
In Table 10.1, corrected the Secured Silicon Region Factory Protect fourth
cycle data from 81/01 to 81/41/01.
Erase and Programming Performance Added Note 5 regarding minimum
program and erase cycle endurance.
Pin Capacitance
Changed section title from “TSOP Pin Capacitance” to “Pin Capacitance”.
Updated values to reflect maximum capacitances for both TSOP and BGA.
Removed typical capacitance values.
Added specific pin clarifications to parameter descriptions.
Physical Dimensions Updated the VBK048 package outline drawing.
Document Number: 002-00856 Rev. *E
Page 57 of 59
S29JL064J
Document History Page (Continued)
Document Title:S29JL064J 64 Mbit (8M x 8-Bit/4M x 16-Bit), 3 V, Simultaneous Read/Write Flash
Document Number: 002-00856
Rev.
ECN No.
Orig. of
Change
*B
-
RYSU
*C
-
RYSU
Submission
Date
Description of Change
04/07/2011 Global
Updated the data sheet designation from Preliminary to Full Production (no
designation on document).
RESET#: Hardware Reset Pin
Added warning that keeping CE# at VIL from power up through the first
reset could cause erroneuous data on the first read.
Reset Command
Clarified that during an embedded program or erase, if DQ5 goes high then
RY/BY# will remain low until a reset is issued
Absolute Maximum Ratings Corrected the maximum value of WP#/ACC
voltage with respect to ground from +10.5V to +9.5V
DC Characteristics
Corrected voltage for autoselect and temporary sector unprotect (VID)
minimum value from 11.5V to 8.5V
Test Conditions
Changed the format of the input pulse levels and input and output timing
measurement reference levels to match the JL032J data sheet format
Hardware Reset (RESET#)
Added note to “Reset Timings” figure clarifying that CE# should only go low
after RESET# has gone high.
08/24/2011 RESET#: Hardware Reset Pin
Removed warning that keeping CE# at VIL from power up through the first
reset could cause erroneuous data on the first read.
Sector Erase Command Sequence Added clarification regarding
additional sector erase commands during time-out period.
Command Definitions Table Added Note 17 to clarify additional sector
erase commands during time-out period.
Hardware Reset (RESET#)
Removed note to the “Reset Timings” figure clarifying that CE# should only
go low after RESET# has gone high.
Erase and Programming Performance Updated Byte Program Time and
Word Program Time to 80 μs.
Physical Dimensions Package drawings updated to latest version
*D
-
RYSU
12/16/2011 Global
Corrected all references in the text to the sector erase time-out period from
80 μs to 50 μs.
*E
5038713
RYSU
12/08/2015 Updated to Cypress Template.
Document Number: 002-00856 Rev. *E
Page 58 of 59
S29JL064J
Sales, Solutions, and Legal Information
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Document Number: 002-00856 Rev. *E
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Revised December 08, 2015
Page 59 of 59
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