User manual | MAX3203E

MAX3203EExT
Rev. A
RELIABILITY REPORT
FOR
MAX3203EExT
PLASTIC ENCAPSULATED/CHIP SCALE DEVICES
August 3, 2003
MAXIM INTEGRATED PRODUCTS
120 SAN GABRIEL DR.
SUNNYVALE, CA 94086
Written by
Reviewed by
Jim Pedicord
Quality Assurance
Reliability Lab Manager
Bryan J. Preeshl
Quality Assurance
Executive Director
Conclusion
The MAX3203E successfully meets the quality and reliability standards required of all Maxim products. In addition,
Maxim’s continuous reliability monitoring program ensures that all outgoing product will continue to meet Maxim’s quality
and reliability standards.
Table of Contents
I. ........Device Description
II. ........Manufacturing Information
III. .......Packaging Information
V. ........Quality Assurance Information
VI. .......Reliability Evaluation
IV. .......Die Information
.....Attachments
I. Device Description
A. General
The MAX3203E is a low-capacitance ±15kV ESD-protection diode array designed to protect sensitive electronics
attached to communication lines. Each channel consists of a pair of diodes that steer ESD current pulses to VCC or
GND. The MAX3203E protect against ESD pulses up to ±15kV Human Body Model, ±8kV Contact Discharge, and
±15kV Air-Gap Discharge, as specified in IEC 61000-4-2. This device has 5pF capacitance per channel, making it
ideal for use on high-speed data I/O interfaces.
The MAX3203E is a triple-ESD structure intended for USB On-the-Go (OTG) and video applications.
The device is available in tiny chip-scale (UCSP™) and thin QFN package, and is specified for -40°C to +85°C
operation.
B. Absolute Maximum Ratings
Item
VCC to GND
I/O_ to GND
Operating Temperature Range
Storage Temperature Range
Junction Temperature
Bump Temperature (soldering) (Note 1)
Infrared (15s)
Vapor Phase (60s)
Lead Temperature (soldering, 10s)
Continuous Power Dissipation (TA = +70C)
6-PIN Thin QFN (3 x 3)
3 x 2 UCSP
Derates above +70°C
6-PIN Thin QFN (3 x 3)
3 x 2 UCSP
Rating
-0.3V to +7.0V
-0.3V to (VCC + 0.3V)
-40°C to +85°C
-65°C to +150°C
+150°C
+220°C
+215°C
+300°C
1951mW
273mW
24.4mW/°C
3.4mW/°C
Note 1: The UCSP devices are constructed using a unique set of packaging techniques that impose a limit on the
thermal profile the device can be exposed to during board-level solder attach and rework. This limit permits the use of
only the solder profiles recommended in the industry-standard specification, JEDEC 020A, paragraph 7.6, Table 3 for
IR/VPR and Convection Reflow. Preheating is required. Hand or wave soldering is not allowed.
II. Manufacturing Information
A. Description/Function:
Data Interfaces
Low-Capacitance, 2/3/4/6-Channel, ±15kV ESD Protection Arrays for High-Speed
B. Process:
BCD80
C. Number of Device Transistors:
6
D. Fabrication Location:
Oregon, USA
E. Assembly Location:
Philippines or Thailand
F. Date of Initial Production:
April, 2003
III. Packaging Information
A. Package Type:
6-Pin QFN (3 x 3)
6-Bump UCSP
B. Lead Frame:
Copper
N/A
C. Lead Finish:
Solder Plate
N/A
D. Die Attach:
Silver-filled Epoxy
N/A
E. Bondwire:
Gold (1 mil dia.)
N/A
F. Mold Material:
Epoxy with silica filler
N/A
G. Assembly Diagram:
# 05-9000-0264
# 05-9000-0262
H. Flammability Rating:
Class UL94-V0
Class UL94-V0
I. Classification of Moisture Sensitivity
per JEDEC standard JESD22-112:
Level 1
Level 1
IV. Die Information
A. Dimensions:
44 X 64 mils
B. Passivation:
Si3N4/SiO2 (Silicon nitride/ Silicon dioxide)
C. Interconnect:
Aluminum/Si (Si = 1%)
D. Backside Metallization:
None
E. Minimum Metal Width:
3 microns (as drawn)
F. Minimum Metal Spacing:
3 microns (as drawn)
G. Bondpad Dimensions:
5 mil. Sq.
H. Isolation Dielectric:
SiO2
I. Die Separation Method:
Wafer Saw
V. Quality Assurance Information
A. Quality Assurance Contacts:
B. Outgoing Inspection Level:
Jim Pedicord (Manager, Reliability Operations)
Bryan Preeshl (Executive Director of QA)
Kenneth Huening (Vice President)
0.1% for all electrical parameters guaranteed by the Datasheet.
0.1% For all Visual Defects.
C. Observed Outgoing Defect Rate: < 50 ppm
D. Sampling Plan: Mil-Std-105D
VI. Reliability Evaluation
A. Accelerated Life Test
The results of the 135°C biased (static) life test are shown in Table 1. Using these results, the Failure
Rate (λ) is calculated as follows:
λ=
1
=
MTTF
1.83
192 x 4389 x 48 x 2
(Chi square value for MTTF upper limit)
Temperature Acceleration factor assuming an activation energy of 0.8eV
λ = 22.62 x 10-9
λ = 22.62 F.I.T. (60% confidence level @ 25°C)
This low failure rate represents data collected from Maxim’s reliability monitor program. In addition to
routine production Burn-In, Maxim pulls a sample from every fabrication process three times per week and subjects
it to an extended Burn-In prior to shipment to ensure its reliability. The reliability control level for each lot to be
shipped as standard product is 59 F.I.T. at a 60% confidence level, which equates to 3 failures in an 80 piece
sample. Maxim performs failure analysis on any lot that exceeds this reliability control level. Attached Burn-In
Schematic (Spec. # 06-6090) shows the static Burn-In circuit. Maxim also performs quarterly 1000 hour life test
monitors. This data is published in the Product Reliability Report (RR-1M).
B. Moisture Resistance Tests
Maxim pulls pressure pot samples from every assembly process three times per week. Each lot sample
must meet an LTPD = 20 or less before shipment as standard product. Additionally, the industry standard
85°C/85%RH testing is done per generic device/package family once a quarter.
C. E.S.D. and Latch-Up Testing
The RT70 die type has been found to have all pins able to withstand a transient pulse of ±2000V, per MilStd-883 Method 3015 (reference attached ESD Test Circuit). Latch-Up testing has shown that this device
withstands a current of ±250mA.
Table 1
Reliability Evaluation Test Results
MAX3023EExT
TEST ITEM
TEST CONDITION
Static Life Test (Note 1)
Ta = 135°C
Biased
Time = 192 hrs.
FAILURE
IDENTIFICATION
PACKAGE
DC Parameters
& functionality
SAMPLE
SIZE
NUMBER OF
FAILURES
48
0
Moisture Testing (Note 2)
Pressure Pot
Ta = 121°C
P = 15 psi.
RH= 100%
Time = 168hrs.
DC Parameters
& functionality
QFN
UCSP
77
77
0
0
85/85
Ta = 85°C
RH = 85%
Biased
Time = 1000hrs.
DC Parameters
& functionality
QFN
UCSP
77
N/A
0
N/A
DC Parameters
& functionality
QFN
UCSP
77
77
0
0
Mechanical Stress (Note 2)
Temperature
Cycle
-65°C/150°C
1000 Cycles
Method 1010 (Note 3)
Note 1: Life Test Data may represent plastic DIP qualification lots.
Note 2: Generic Package/Process data
Note 3: UCSP Temperature Cycle performed at -40°C/125°C, 1000 Cycles, ramp rate 11°C/minute, dwell=15 minutes,
One cycle/hour
Attachment #1
TABLE II. Pin combination to be tested. 1/ 2/
Terminal A
(Each pin individually
connected to terminal A
with the other floating)
Terminal B
(The common combination
of all like-named pins
connected to terminal B)
1.
All pins except VPS1 3/
All VPS1 pins
2.
All input and output pins
All other input-output pins
1/ Table II is restated in narrative form in 3.4 below.
2/ No connects are not to be tested.
3/ Repeat pin combination I for each named Power supply and for ground
(e.g., where VPS1 is VDD, VCC, VSS, VBB, GND, +VS, -VS, VREF, etc).
3.4
Pin combinations to be tested.
a.
Each pin individually connected to terminal A with respect to the device ground pin(s) connected
to terminal B. All pins except the one being tested and the ground pin(s) shall be open.
b.
Each pin individually connected to terminal A with respect to each different set of a combination
of all named power supply pins (e.g., VSS1, or VSS2 or VSS3 or VCC1 , or VCC2 ) connected to
terminal B. All pins except the one being tested and the power supply pin or set of pins shall be
open.
c.
Each input and each output individually connected to terminal A with respect to a combination of
all the other input and output pins connected to terminal B. All pins except the input or output pin
being tested and the combination of all the other input and output pins shall be open.
TERMINAL C
R1
R2
S1
TERMINAL A
REGULATED
HIGH VOLTAGE
SUPPLY
S2
C1
DUT
SOCKET
SHORT
TERMINAL B
TERMINAL D
Mil Std 883D
Method 3015.7
Notice 8
R = 1.5kΩ
C = 100pf
CURRENT
PROBE
(NOTE 6)
3x3x0.8 MM QFN THIN PKG.
EXPOSED PAD PKG.
PART MARKING ORIENTATION
IN REFERENCE TO WAFER FLAT
(MARK IS ON WAFER BACKSIDE)
ONCE PER SOCKET
ONCE PER BOARD
1K
+5.0 VOLTS
1.0uF
RT70Z, -1Z
MAX3203E / 3204E
1
I1
2
I2
3 GND
VCC
6
I4
5
I3
4
1K
1.0uF
3 x 3 6 PIN QFN(THIN)
MAX EXPECTED CURRENT:
50uA (+5.0V)
50uA (+2.5V)
Power sequence +5.0V, +2.5V
Doc ID # 06-6090 Rev A
+2.5 VOLTS
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