RJK1525DPJ, RJK1525DPE, RJK1525DPF Datasheet

RJK1525DPJ, RJK1525DPE, RJK1525DPF Datasheet
Preliminary Datasheet
RJK1525DPJ, RJK1525DPE, RJK1525DPF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0623-0200
Rev.2.00
Jun 30, 2010
Features
 Low on-resistance
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
(Package name LDPAK(L))
(Package name LDPAK(S)-(1))
4
2
4
4
1
1
RENESAS Package code: PRSS0004AE-C
(Package name LDPAK(S)-(2))
2
1
3
RJK1525DPE
3
2
3
RJK1525DPF
RJK1525DPJ
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
Pch Note2
ch-c
Tch
Tstg
Ratings
150
30
25
50
25
50
17
21.6
75
1.67
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
Page 1 of 7
RJK1525DPJ, RJK1525DPE, RJK1525DPF
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
RDS(on)
Min
150
—
—
3.0
7
—
Typ
—
—
—
—
12
0.093
Max
—
1
0.1
4.5
—
0.110
Unit
V
A
A
V
S

Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
680
150
22
22
110
45
12
18
4.5
9
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
VDF
trr
—
—
0.95
100
1.50
—
V
ns
Body-Drain diode reverse recovery
charge
Qrr
—
0.4
—
C
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
Test conditions
ID = 10 mA, VGS = 0
VDS = 150 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 12.5 A, VDS = 10 V Note4
ID = 12.5 A, VGS = 10 VNote4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 12.5 A
VGS = 10 V
RL = 6 
Rg = 10 
VDD = 120 V
VGS = 10 V
ID = 25 A
IF = 25 A, VGS = 0 Note4
IF = 25 A, VGS = 0
diF/dt = 100 A/s
Notes: 4. Pulse test
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
Page 2 of 7
RJK1525DPJ, RJK1525DPE, RJK1525DPF
Preliminary
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
Ta = 25°C
300
100
ID (A)
75
30
PW
(1s = 1
ho
t) ms
10
Drain Current
Channel Dissipation
Pch (W)
100
50
25
3
10
μ
0μ s
s
10
Operation in this
1 area is limited by
RDS(on)
0.3
0.1
0.03
0.01
0
50
100
150
Case Temperature
1
200
Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
20
20
6.5 V
7V
VDS = 10 V
Pulse Test
Pulse Test
6V
12
8
5.5 V
4
ID (A)
16
10 V
Drain Current
ID (A)
16
Drain Current
100 300 1000
30
3
10
Drain to Source Voltage VDS (V)
VGS = 5 V
12
8
Tc = 75°C
4
25°C
−25°C
0
4
8
12
Drain to Source Voltage
0
16
20
VDS (V)
Drain to Source Saturation Voltage
VDS(on) (V)
8
Pulse Test
6
4
ID = 25 A
2
12.5 A
8.5 A
0
4
8
12
Gate to Source Voltage
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
16
VGS (V)
20
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2
4
6
Gate to Source Voltage
8
10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
VGS = 10 V
0.5
0.2
0.1
0.05
0.02
Pulse Test
0.01
1
3
10
30
Drain Current
100 300
ID (A)
1000
Page 3 of 7
Preliminary
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
0.5
VGS = 10 V
Pulse Test
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (Ω)
RJK1525DPJ, RJK1525DPE, RJK1525DPF
0.4
0.3
0.2
ID = 25 A
12.5 A
0.1
8.5 A
0
−25
0
25
50
75
Case Temperature
100 125
150
100
30
Tc = −25°C
10
3
25°C
1
75°C
0.3
VDS = 10 V
Pulse Test
0.1
0.1
0.3
Tc (°C)
100000
500
30000
200
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
100
50
20
10
5
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
1000
Ciss
300
100
Coss
30
Crss
0
8
60
4
VDD = 120 V
60 V
30 V
0
4
8
Gate Charge
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
12
16
Qg (nC)
0
20
Switching Time t (ns)
VDS
12
VGS (V)
VDD = 30 V
60 V
120 V
Gate to Source Voltage
120
VGS
100
150
VDS (V)
Switching Characteristics
1000
16
ID = 25 A
50
Drain to Source Voltage
Dynamic Input Characteristics
240
VDS (V)
VGS = 0
f = 1 MHz
3000
3
10
30
100 300 1000
Reverse Drain Current IDR (A)
180
100
ID (A)
10
1
30
10
Typical Capacitance vs.
Drain to Source Voltage
1
Drain to Source Voltage
3
Drain Current
Body-Drain Diode Reverse
Recovery Time
2
1
VGS = 10 V, VDD = 75 V
PW = 5 μs, duty < 1 %
RG = 10 Ω
tr
tf
100
td(off)
td(on)
10
tr
1
0.1
tf
0.3
1
3
Drain Current
10
30
ID (A)
100
Page 4 of 7
RJK1525DPJ, RJK1525DPE, RJK1525DPF
Preliminary
Reverse Drain Current vs.
Source to Drain Voltage
Gate to Source Cutoff Voltage
vs. Case Temperature
5
Gate to Source Cutoff Voltage
VGS(off) (V)
Reverse Drain Current
IDR (A)
50
40
30
20
VGS = 0 V
10
10 V
5V
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
VDS = 10 V
ID = 10 mA
4
1 mA
3
2
0.1 mA
1
0
-25
2.0
0
VSD (V)
25
50
75
Case Temperature
100 125 150
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
3
Tc = 25°C
1
0.3
D=1
0.5
0.2
0.1
0.03
0.01
0.1
0.05
0.02
1
0.0 ulse
p
ot
h
1s
θch – c(t) = γs (t) • θch – c
θch – c = 1.67°C/W, Tc = 25°C
PDM
D=
PW
T
PW
0.003
T
0.001
10 μ
100 μ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
V DD
= 75 V
Vout
10%
10%
90%
td(on)
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
tr
10%
90%
td(off)
tf
Page 5 of 7
RJK1525DPJ, RJK1525DPE, RJK1525DPF
Preliminary
Package Dimensions
 RJK1525DPJ
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
⎯
PRSS0004AE-A
LDPAK(L) / LDPAK(L)V
1.40g
(1.4)
4.44 ± 0.2
10.2 ± 0.3
8.6 ± 0.3
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.2
0.86 +– 0.1
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
2.49 ± 0.2
11.0 ± 0.5
11.3 ± 0.5
0.3
10.0 +– 0.5
Unit: mm
0.4 ± 0.1
 RJK1525DPE
SC-83
RENESAS Code
Package Name
PRSS0004AE-B
LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.]
Unit: mm
1.30g
7.8
6.6
(1.5)
10.0
2.49 ± 0.2
0.2
0.1 +– 0.1
7.8
7.0
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
1.7
JEITA Package Code
2.2
1.37 ± 0.2
2.54 ± 0.5
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
1.3 ± 0.2
Page 6 of 7
RJK1525DPJ, RJK1525DPE, RJK1525DPF
Preliminary
 RJK1525DPF
⎯
RENESAS Code
Package Name
PRSS0004AE-C
LDPAK(S)-(2) / LDPAK(S)-(2)V
MASS[Typ.]
Unit: mm
1.35g
(1.4)
4.44 ± 0.2
7.8
6.6
(2.3)
2.49 ± 0.2
0.2
0.1 +– 0.1
7.8
7.0
+ 0.3
– 0.5
1.3 ± 0.15
10.0
(1.5)
8.6 ± 0.3
10.2 ± 0.3
1.7
JEITA Package Code
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.3 ± 0.2
Ordering Information
Part Name
RJK1525DPE-LE
Note:
Quantity
1000 pcs
Shipping Container
Taping
For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
REJ03G0623-0200 Rev.2.00
Jun 30, 2010
Page 7 of 7
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