IRHNA57260SE RADIATION HARDENED         ... POWER MOSFET         ...
PD-91839K
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (SMD-2)
IRHNA57260SE
JANSR2N7473U2
200V, N CHANNEL
REF:MIL-PRF-19500/684
5
™
TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on) ID
QPL Part Number
IRHNA57260SE 100K Rads (Si) 0.038Ω 53.5A JANSR2N7473U2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
SMD-2
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
53.5
34
214
250
2.0
±20
380
53.5
25
9.2
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
3.3 (Typical)
g
For footnotes refer to the last page
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1
09/12/07
IRHNA57260SE, JANSR2N7473U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
200
—
—
V
—
0.26
—
V/°C
—
—
0.038
Ω
VGS = 12V, ID = 34A Ã
2.5
35
—
—
—
—
—
—
4.5
—
10
25
V
S
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 34A Ã
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 53.5A
VDS = 100V
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
155
45
75
35
125
80
50
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6044
913
65
—
—
—
nA
nC
ns
nH
pF
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VDD = 100V, ID = 53.5A,
VGS =12V, RG = 2.35Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
—
—
—
—
53.5
214
A
VSD
trr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
450
7.0
V
ns
µC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = 53.5A, VGS = 0V Ã
Tj = 25°C, IF = 53.5A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
1.6
0.5
—
Units
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHNA57260SE, JANSR2N7473U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads (Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage „
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source „
On-State Resistance (SMD-2)
„
Diode Forward Voltage
Units
Test Conditions
Min
Max
200
2.0
—
—
—
—
4.5
100
-100
10
nA
µA
VGS = 0V, ID = 1.0mA
VGS = VDS , ID = 1.0mA
VGS = 20V
VGS = -20V
VDS=160V, VGS=0V
—
0.039
Ω
VGS = 12V, ID = 34A
—
0.038
Ω
VGS = 12V, ID = 34A
—
1.2
V
VGS = 0V, ID = 53.5A
V
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm2))
36.7
59.8
82.3
VDS (V)
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
39.5
200
200
200
200
200
32.5
200
200
200
185
120
28.4
200
200
150
50
25
Energy
(MeV)
309
341
350
250
VDS
200
Br
I
Au
150
100
50
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA57260SE, JANSR2N7473U2
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
10
5.0V
1
100
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
1
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.0
TJ = 25 ° C
TJ = 150 ° C
10
V DS =15
50V
20µs PULSE WIDTH
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
1
10
100
Fig 2. Typical Output Characteristics
1000
6.0
20µs PULSE WIDTH
TJ = 150 °C
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
5.0V
10
0.1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
5.0
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
TOP
50.3A
ID = 53.5A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
10000
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
C, Capacitance (pF)
IRHNA57260SE, JANSR2N7473U2
Ciss
6000
Coss
4000
2000
Crss
0
1
10
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
VDS = 160V
VDS = 100V
VDS = 40V
16
0
100
ID = 53.5A
100
100
TJ = 150 ° C
10
1
TJ = 25 °C
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
1.4
10
100µs
1ms
1
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
1.0
10ms
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
5
IRHNA57260SE, JANSR2N7473U2
Pre-Irradiation
60
RD
VDS
VGS
50
D.U.T.
I D , Drain Current (A)
RG
+
-V DD
40
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
10
0
90%
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
0.001
0.00001
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNA57260SE, JANSR2N7473U2
15V
VDS
D.U.T.
RG
VGS
20V
DRIVER
L
.
IAS
tp
+
- VDD
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS , Single Pulse Avalanche Energy (mJ)
800
ID
24A
34A
BOTTOM 53.5A
TOP
600
400
200
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNA57260SE, JANSR2N7473U2
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 0.27mH
Peak IL = 53.5A, VGS = 12V
 ISD ≤ 53.5A, di/dt ≤ 190A/µs,
VDD ≤ 200V, TJ ≤ 150°C
à Pulse width ≤ 300µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/2007
8
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