HAF2007(L) HAF2007(S) Datasheet

HAF2007(L) HAF2007(S) Datasheet
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HAF2007(L), HAF2007(S)
Silicon N Channel MOS FET Series
Power Switching
REJ03G1137-0400
(Previous: ADE-208-706B)
Rev.4.00
Sep 07, 2005
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
•
•
•
•
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Built-in the over temperature shut-down circuit
Latch type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
4
1
1
2
2
1. Gate
2. Drain
3. Source
4. Drain
3
2, 4
D
3
1
G
Gate resistor
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shutdown
Circuit
S
3
Rev.4.00 Sep 07, 2005 page 1 of 8
HAF2007(L), HAF2007(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
Value
60
Unit
V
VGSS
VGSS
16
–2.5
V
V
ID
Note 1
ID (pulse)
5
10
A
A
IDR
Note 2
Pch
5
20
A
W
Tch
Tstg
150
–55 to +150
°C
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Rev.4.00 Sep 07, 2005 page 2 of 8
Symbol
VIH
Min
3.5
Typ
—
Max
—
Unit
V
Test Conditions
VIL
IIH1
—
—
—
—
1.2
100
V
µA
Vi = 8 V, VDS = 0
IIH2
IIL
—
—
—
—
50
1
µA
µA
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
IIH (sd) 1
IIH (sd) 2
—
—
0.8
0.35
—
—
mA
mA
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Tsd
VOP
—
3.5
175
—
—
12
°C
V
Channel temperature
HAF2007(L), HAF2007(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
ID1
Min
4
Typ
—
Max
—
Unit
A
Test Conditions
VGS = 3.5 V, VDS = 2 V
ID2
—
—
10
—
mA
V
VGS = 1.2 V, VDS = 2 V
ID = 10 mA, VGS = 0
Drain to source breakdown voltage
V (BR) DSS
—
60
Gate to source breakdown voltage
V (BR) GSS
V (BR) GSS
16
–2.5
—
—
—
—
V
V
IG = 300 µA, VDS = 0
IG = –100 µA, VDS = 0
IGSS1
IGSS2
—
—
—
—
100
50
µA
µA
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
IGSS3
IGSS4
—
—
—
—
1
–100
µA
µA
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
Input current (shut down)
IGS (op) 1
IGS (op) 2
—
—
0.8
0.35
—
—
mA
mA
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
Zero gate voltage drain current
Gate to source cutoff voltage
IDSS
VGS (off)
—
1.0
—
—
10
2.25
µA
V
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
|yfs|
7.5
73
—
120
S
mΩ
ID = 2.5 A, VDS = 10 V
Note 3
ID = 2.5 A, VGS = 4 V
ID = 2.5 A, VGS = 10 V
VDS = 10 V, VGS = 0
f = 1 MHz
ID = 2.5 A
VGS = 5 V
RL = 12 Ω
Gate to source leak current
Note 3
Forward transfer admittance
Static drain to source on state resistance
RDS (on)
4
—
Output capacitance
RDS (on)
Coss
—
—
55
270
75
—
mΩ
pF
Turn-on delay time
td (on)
—
2.8
—
µs
Rise time
Turn-off delay time
tr
td (off)
—
—
12.4
15
—
—
µs
µs
Fall time
Body-drain diode forward voltage
tf
VDF
—
—
11
0.9
—
—
µs
V
trr
—
140
—
ns
tos1
—
1.1
—
ms
IF = 5 A, VGS = 0
diF/dt = 50 A/µs
VGS = 5 V, VDD = 16 V
tos2
—
0.57
—
ms
VGS = 5 V, VDD = 24 V
Body-drain diode reverse recovery time
Over load shut down operation time
Note4
Notes: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
Rev.4.00 Sep 07, 2005 page 3 of 8
IF = 5 A, VGS = 0
Note 3
HAF2007(L), HAF2007(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
30
20
10
ID (A)
200
100
Drain Current
Channel Dissipation
Pch (W)
40
20
0
0
50
100
150
Case Temperature
200
Thermal shut down
Operation area
50
10
10
5
1
4V
15
Drain Current
5
ID (A)
20
Typical Transfer Characteristics
Pulse Test
8V
6V
5V
10
50 100
Drain to Source Voltage VDS (V)
Tc (°C)
4
Tc = –25°C
25°C
3
Drain Current
ID (A)
10 V
µs
PW
m
s
DC
=
10
2 Operation in (T O
c = pe
m
this area is
s
2 ra
1
limited by RDS (on) 5°C tion
)
0.5 Ta = 25°C
0.3
0.3 0.5 1
2
5 10 20
Typical Output Characteristics
25
0
VGS = 3.5 V
5
75°C
2
1
VDS = 10 V
Pulse Test
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
0.20
0.15
ID = 2 A
0.10
1A
0.05
0.5 A
0
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 4 of 8
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (mΩ)
Drain to Source Saturation Voltage
VDS (on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
2
Gate to Source Voltage
VDS (V)
0.25
1
500
200
VGS = 4 V
100
50
10 V
20
Pulse Test
10
0.1 0.2
0.5
1
2
Drain Current
5
ID (A)
10
20
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.5 A, 1 A
ID = 2 A
0.12
VGS = 4 V
0.08
ID = 2 A
0.5 A, 1 A
0.04
10 V
0
–40
0
40
80
Case Temperature
120
160
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
HAF2007(L), HAF2007(S)
100
VDS = 10 V
Pulse Test
50
Tc = –25°C
20
10
25°C
5
75°C
2
1
0.5
Tc (°C)
500
50
Switching Time t (ns)
Reverse Recovery Time trr (ns)
100
200
100
50
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
1
2
5
10
Reverse Drain Current
20
10
20
50
VGS = 5 V, VDD = 30 V
PW = 300 µs, duty ≤ 1 %
td(off)
20
tr
10
tf
5
td(on)
2
1
0.5
50
IDR (A)
1
2
5
10
Drain Current
20
50
ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Drain Current vs.
Source to Drain Voltage
5
10000
Pulse Test
4
3
Capacitance C (pF)
Reverse Drain Current IDR (A)
5
Switching Characteristics
1000
10
0.5
2
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
20
1
VGS = 5 V
0V
2
1
3000
1000
300
Coss
100
30
0
VGS = 0
f = 1 MHz
10
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Rev.4.00 Sep 07, 2005 page 5 of 8
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
HAF2007(L), HAF2007(S)
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
Gate to Source Voltage
VGS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
12
10
VDD = 16 V
8
6
24 V
4
2
0
10 µ
100 µ
1m
10 m
100 m
200
180
160
140
120
ID = 0.5 A
100
0
2
4
6
8
Gate to Source Voltage
Shutdown Time of Load-Short Test PW (S)
10
VGS (V)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
θch – c (t) = γ s (t) • θch – c
0.1 0.1
θch – c = 6.25°C/W, Tc = 25°C
0.05
ul
se
PW
T
PW
T
tp
2
0.0
1
0.0
ho
0.03
D=
PDM
1s
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
Vout
Vin
5V
50 Ω
VDD
= 30 V
10%
90%
td(on)
Rev.4.00 Sep 07, 2005 page 6 of 8
10%
tr
90%
td(off)
tf
HAF2007(L), HAF2007(S)
Package Dimensions
RENESAS Code
Package Name
MASS[Typ.]

PRSS0004ZD-B
DPAK(L)-(2) / DPAK(L)-(2)V
0.42g
Unit: mm
1.7 ± 0.5
JEITA Package Code
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
16.2 ± 0.5
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
4.7 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
RENESAS Code
Package Name
MASS[Typ.]
SC-63
PRSS0004ZD-C
DPAK(S) / DPAK(S)V
0.28g
6.5 ± 0.5
5.4 ± 0.5
(0.1)
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
Rev.4.00 Sep 07, 2005 page 7 of 8
(5.1)
(5.1)
(0.1)
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
JEITA Package Code
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
HAF2007(L), HAF2007(S)
Ordering Information
Part Name
Quantity
Shipping Container
HAF2007-90L
HAF2007-90S
Max: 100 pcs/sack
Max: 100 pcs/sack
Sack
Sack
HAF2007-90STL
HAF2007-90STR
3000 pcs/Reel
3000 pcs/Reel
Embossed tape
Embossed tape
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 07, 2005 page 8 of 8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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