DATA SHEET Audio Order code 82-0264 82-0266 Manufacturer code LM386N-1 LM386M-1 Description LM386N-1 LOW VOLTAGE POWER AMPLIFIER RC LM386M-1 LOW VOLTAGE POWER AMP (RC) Audio The enclosed information is believed to be correct, Information may change ‘without notice’ due to product improvement. Users should ensure that the product is suitable for their use. E. & O. E. Sales: 01206 751166 [email protected] Technical: 01206 835555 [email protected] Page 1 of 7 Revision A 04/07/2003 Fax: 01206 7551188 www.rapidelectronics.co.uk LM386 Low Voltage Audio Power Amplifier General Description The LM386 is a power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external part count low, but the addition of an external resistor and capacitor between pins 1 and 8 will increase the gain to any value up to 200. The inputs are ground referenced while the output is automatically biased to one half the supply voltage. The quiescent power drain is only 24 milliwatts when operating from a 6 volt supply, making the LM386 ideal for battery operation. Y Features Y Y Y Y Y Y Y Y Y Applications Y Y Y Battery operation Minimum external parts Wide supply voltage range Low quiescent current drain Y Y 4V–12V or 5V – 18V 4 mA Voltage gains from 20 to 200 Ground referenced input Self-centering output quiescent voltage Low distortion Eight pin dual-in-line package Y Y AM-FM radio amplifiers Portable tape player amplifiers Intercoms TV sound systems Line drivers Ultrasonic drivers Small servo drivers Power converters Equivalent Schematic and Connection Diagrams Dual-In-Line and Small Outline Packages TL/H/6976 – 2 Top View TL/H/6976 – 1 Order Number LM386M-1, LM386N-1, LM386N-3 or LM386N-4 See NS Package Number M08A or N08E Typical Applications Amplifier with Gain e 20 Minimum Parts Amplifier with Gain e 200 TL/H/6976 – 4 TL/H/6976 – 3 C1995 National Semiconductor Corporation TL/H/6976 RRD-B30M75/Printed in U. S. A. LM386 Low Voltage Audio Power Amplifier December 1994 Absolute Maximum Ratings Soldering Information Dual-In-Line Package Soldering (10 sec) Small Outline Package Vapor Phase (60 sec) Infrared (15 sec) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage (LM386N-1, -3, LM386M-1) Supply Voltage (LM386N-4) Package Dissipation (Note 1) (LM386N) (LM386M) Input Voltage Storage Temperature Operating Temperature Junction Temperature a 260§ C a 215§ C a 220§ C See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount devices. Thermal Resistance iJC (DIP) 37§ C/W iJA (DIP) 107§ C/W iJC (SO Package) 35§ C/W iJA (SO Package) 172§ C/W g 0.4V b 65§ C to a 150§ C Electrical Characteristics Parameter 15V 22V 1.25W 0.73W 0§ C to a 70§ C a 150§ C TA e 25§ C Conditions Operating Supply Voltage (VS) LM386N-1, -3, LM386M-1 LM386N-4 Min Typ 4 5 Quiescent Current (IQ) VS e 6V, VIN e 0 Output Power (POUT) LM386N-1, LM386M-1 LM386N-3 LM386N-4 4 VS e 6V, RL e 8X, THD e 10% VS e 9V, RL e 8X, THD e 10% VS e 16V, RL e 32X, THD e 10% 250 500 700 Max Units 12 18 V V 8 mA 325 700 1000 mW mW mW Voltage Gain (AV) VS e 6V, f e 1 kHz 10 mF from Pin 1 to 8 26 46 dB dB Bandwidth (BW) VS e 6V, Pins 1 and 8 Open 300 kHz Total Harmonic Distortion (THD) VS e 6V, RL e 8X, POUT e 125 mW f e 1 kHz, Pins 1 and 8 Open 0.2 % Power Supply Rejection Ratio (PSRR) VS e 6V, f e 1 kHz, CBYPASS e 10 mF Pins 1 and 8 Open, Referred to Output 50 dB 50 250 kX nA Input Resistance (RIN) Input Bias Current (IBIAS) VS e 6V, Pins 2 and 3 Open Note 1: For operation in ambient temperatures above 25§ C, the device must be derated based on a 150§ C maximum junction temperature and 1) a thermal resistance of 80§ C/W junction to ambient for the dual-in-line package and 2) a thermal resistance of 170§ C/W for the small outline package. Application Hints INPUT BIASING The schematic shows that both inputs are biased to ground with a 50 kX resistor. The base current of the input transistors is about 250 nA, so the inputs are at about 12.5 mV when left open. If the dc source resistance driving the LM386 is higher than 250 kX it will contribute very little additional offset (about 2.5 mV at the input, 50 mV at the output). If the dc source resistance is less than 10 kX, then shorting the unused input to ground will keep the offset low (about 2.5 mV at the input, 50 mV at the output). For dc source resistances between these values we can eliminate excess offset by putting a resistor from the unused input to ground, equal in value to the dc source resistance. Of course all offset problems are eliminated if the input is capacitively coupled. When using the LM386 with higher gains (bypassing the 1.35 kX resistor between pins 1 and 8) it is necessary to bypass the unused input, preventing degradation of gain and possible instabilities. This is done with a 0.1 mF capacitor or a short to ground depending on the dc source resistance on the driven input. GAIN CONTROL To make the LM386 a more versatile amplifier, two pins (1 and 8) are provided for gain control. With pins 1 and 8 open the 1.35 kX resistor sets the gain at 20 (26 dB). If a capacitor is put from pin 1 to 8, bypassing the 1.35 kX resistor, the gain will go up to 200 (46 dB). If a resistor is placed in series with the capacitor, the gain can be set to any value from 20 to 200. Gain control can also be done by capacitively coupling a resistor (or FET) from pin 1 to ground. Additional external components can be placed in parallel with the internal feedback resistors to tailor the gain and frequency response for individual applications. For example, we can compensate poor speaker bass response by frequency shaping the feedback path. This is done with a series RC from pin 1 to 5 (paralleling the internal 15 kX resistor). For 6 dB effective bass boost: R j 15 kX, the lowest value for good stable operation is R e 10 kX if pin 8 is open. If pins 1 and 8 are bypassed then R as low as 2 kX can be used. This restriction is because the amplifier is only compensated for closed-loop gains greater than 9. 2 Typical Performance Characteristics Quiescent Supply Current vs Supply Voltage Power Supply Rejection Ratio (Referred to the Output) vs Frequency Peak-to-Peak Output Voltage Swing vs Supply Voltage Voltage Gain vs Frequency Distortion vs Frequency Distortion vs Output Power Device Dissipation vs Output PowerÐ4X Load Device Dissipation vs Output PowerÐ8X Load Device Dissipation vs Output PowerÐ16X Load TL/H/6976 – 5 3 Typical Applications (Continued) Amplifier with Gain e 50 Low Distortion Power Wienbridge Oscillator TL/H/6976 – 6 TL/H/6976 – 7 Amplifier with Bass Boost Square Wave Oscillator TL/H/6976 – 8 TL/H/6976 – 9 Frequency Response with Bass Boost TL/H/6976 – 10 4 Typical Applications (Continued) AM Radio Power Amplifier TL/H/6976 – 11 Note 1: Twist supply lead and supply ground very tightly. Note 4: R1C1 band limits input signals. Note 2: Twist speaker lead and ground very tightly. Note 5: All components must be spaced very close to IC. Note 3: Ferrite bead is Ferroxcube K5-001-001/3B with 3 turns of wire. Physical Dimensions inches (millimeters) SO Package (M) Order Number LM386M-1 NS Package Number M08A 5 LM386 Low Voltage Audio Power Amplifier Physical Dimensions inches (millimeters) (Continued) Dual-In-Line Package (N) Order Number LM386N-1, LM386N-3 or LM386N-4 NS Package Number N08E LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. National Semiconductor Corporation 2900 Semiconductor Drive P.O. Box 58090 Santa Clara, CA 95052-8090 Tel: 1(800) 272-9959 TWX: (910) 339-9240 National Semiconductor GmbH Livry-Gargan-Str. 10 D-82256 F4urstenfeldbruck Germany Tel: (81-41) 35-0 Telex: 527649 Fax: (81-41) 35-1 National Semiconductor Japan Ltd. Sumitomo Chemical Engineering Center Bldg. 7F 1-7-1, Nakase, Mihama-Ku Chiba-City, Ciba Prefecture 261 Tel: (043) 299-2300 Fax: (043) 299-2500 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Hong Kong Ltd. 13th Floor, Straight Block, Ocean Centre, 5 Canton Rd. Tsimshatsui, Kowloon Hong Kong Tel: (852) 2737-1600 Fax: (852) 2736-9960 National Semiconductores Do Brazil Ltda. Rue Deputado Lacorda Franco 120-3A Sao Paulo-SP Brazil 05418-000 Tel: (55-11) 212-5066 Telex: 391-1131931 NSBR BR Fax: (55-11) 212-1181 National Semiconductor (Australia) Pty, Ltd. Building 16 Business Park Drive Monash Business Park Nottinghill, Melbourne Victoria 3168 Australia Tel: (3) 558-9999 Fax: (3) 558-9998 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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