STPS10L60D

®

STPS10L60D/FP

POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I

F(AV)

V

RRM

Tj (max)

V

F

(max)

10 A

60 V

150°C

0.56 V

TO-220FPAC

STPS10L60FP

K

A

FEATURES AND BENEFITS

■

■

■

■

LOW FORWARD VOLTAGE DROP

NEGLIGIBLE SWITCHING LOSSES

LOW THERMAL RESISTANCE

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Schottky rectifier suited for Switched Mode Power

Supplies and high frequency DC to DC converters.

Packaged in TO-220AC,TO-220FPAC this device is intended for use in DC/DC chargers.

K

A

TO-220AC

STPS10L60D

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

V

RRM Repetitive peak reverse voltage

I

F(RMS) RMS forward current

I

F(AV) Average forward current TO-220AC Tc = 140°C

δ

= 0.5

TO-220FPAC Tc = 120°C

δ

= 0.5

I

FSM Surge non repetitive forward current tp = 10 ms Sinusoidal

I

RRM Repetitive peak reverse current tp = 2 µs square F=1kHz

P

ARM Repetitive peak avalanche power tp = 1µs Tj = 25°C

T stg

Tj

Storage temperature range

Maximum operating junction temperature *

60

30

10

220

1

V

A

A

A

A

5800 W

- 65 to + 175

°

C

150

°

C dV/dt

Critical rate of rise of reverse voltage

10000 V/µs

* : dPtot dTj

<

1

(

− a ) thermal runaway condition for a diode on its own heatsink

July 2003 - Ed: 4B

1/5

STPS10L60D/FP

THERMAL RESISTANCES

Symbol

R th(j-c) Junction to case

Parameter Value

1.6

4

Unit

°C/W

TO-220AC

TO-220FPAC

STATIC ELECTRICAL CHARACTERISTICS

Symbol

I

V

R

F

*

*

Parameter

Reverse leakage current Tj = 25°C

Forward voltage drop

Tj = 125°C

Tj = 25

°

C

Tj = 125°C

Tj = 25

°

C

Tj = 125°C

Pulse test : * tp = 380 µs,

δ

< 2%

Tests conditions

I

I

I

I

V

F

F

F

F

R

= V

RRM

= 10 A

= 10 A

= 20 A

= 20 A

To evaluate the conduction losses use the following equation :

P = 0.42 x I

F(AV)

+ 0.014 I

F

2

(RMS)

Fig. 1: Average forward power dissipation versus average forward current.

Min.

Typ.

Max.

Unit

65

350

95

0.6

0.48

0.56

0.74

0.62

0.7

µA mA

V

Fig. 2: Average forward current versus ambient temperature(

δ

= 0.5).

6

5

4

3

2

8

PF(av)(W)

7

δ

= 0.05

δ

= 0.1

δ

= 0.2

δ

= 0.5

T

δ

= 1

1

IF(av) (A) δ

=tp/T tp

0

0 1 2 3 4 5 6 7 8 9 10 11 12

12

IF(av)(A)

10

8

6

4

T

2

0

0

δ

=tp/T

25 tp

Rth(j-a)=Rth(j-c)

Rth(j-a)=15°C/W

TO-220FPAC

50

Tamb(°C)

75 100

TO-220AC

125 150

Fig. 3: Normalized avalanche power derating versus pulse duration.

1

P (t )

P

ARM

(1µs)

0.1

0.01

0.001

0.01

0.1

1 10 100

Fig. 4: Normalized avalanche power derating versus junction temperature.

1000

1.2

P (t )

P

ARM

(25°C)

1

0.8

0.6

0.4

0.2

0

0 25 50 75 100 125 150

2/5

STPS10L60D/FP

Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220AC).

IM(A)

200

180

160

140

120

100

80

60

40

20

0

1E-3

I M t

δ

=0.5

1E-2 t(s)

1E-1

Tc=25°C

Tc=75°C

Tc=125°C

1E+0

Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220FPAC).

120

IM(A)

100

80

60

40

20

I M

0

1E-3 t

δ

=0.5

1E-2 t(s)

1E-1

Tc=25°C

Tc=75°C

Tc=100°C

1E+0

Fig. 6-1: Relative variation of thermal impedance junction to lead versus pulse duration

(TO-220AC).

1.0

Zth(j-c)/Rth(j-c)

0.8

0.6

δ

= 0.5

0.4

0.2

δ

= 0.2

δ

= 0.1

Single pulse

0.0

1E-4 1E-3 1E-2 tp(s)

T

δ

=tp/T

1E-1 tp

1E+0

Fig. 6-2: Relative variation of thermal impedance junction to lead versus pulse duration

(TO-220FPAC).

1.0

Zth(j-c)/Rth(j-c)

0.8

0.6

δ

= 0.5

0.4

0.2

δ

= 0.2

δ

= 0.1

0.0

1E-3

Single pulse

1E-2 tp(s)

1E-1

T

δ

=tp/T

1E+0 tp

1E+1

Fig. 7: Reverse leakage current versus reverse voltage applied (typical values).

Fig. 8: Junction capacitance versus reverse voltage applied (typical values).

5E+2

IR(mA)

1E+2

1E+1

1E+0

Tc=150°C

Tc=125°C

Tc=100°C

Tc=75°C

Tc=50°C

1E-1

Tc=25°C

1E-2

VR(V)

1E-3

0 5 10 15 20 25 30 35 40 45 50 55 60

0.2

0.1

1

2.0

C(nF)

1.0

0.5

VR(V)

10

F=1MHz

Tj=25°C

100

3/5

STPS10L60D/FP

Fig. 9: Forward voltage drop versus forward current (low level, maximum values).

IFM(A)

100.0

Tj=150°C

(typical values)

10.0

Tj=25°C

Tj=125°C

1.0

VFM(V)

0.1

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

PACKAGE MECHANICAL DATA

TO-220FPAC

L3

L2

L4

H

G1

G

F

L6

Dia

F1

L5

D

B

A

E

L7

F1

G

G1

H

L2

L3

L4

L5

D

E

F

A

B

L6

L7

Dia.

REF.

DIMENSIONS

Millimeters Inches

Min.

Max.

Min.

Max.

4.4

2.5

2.5

0.45

0.75

4.6

2.7

0.173

0.181

0.098

0.106

2.75

0.098

0.108

0.70

0.018

0.027

1 0.030

0.039

1.15

4.95

2.4

10

16 Typ.

1.70

0.045

0.067

5.20

0.195

0.205

2.7

0.094

0.106

10.4

0.393

0.409

0.63 Typ.

28.6

9.8

2.9

30.6

10.6

3.6

1.126

0.386

0.114

1.205

0.417

0.142

15.9

9.00

3.00

16.4

0.626

0.646

9.30

0.354

0.366

3.20

0.118

0.126

4/5

STPS10L60D/FP

PACKAGE MECHANICAL DATA

TO-220AC

L2

F

H2

G

Ø I

L5

L6

F1

L9

L4

C

D

A

M

E

L7

REF.

DIMENSIONS

Millimeters Inches

Min.

Max.

Min.

Max.

A

C

D

E

F

4.40

1.23

2.40

0.49

0.61

4.60

1.32

2.72

0.70

0.88

0.173

0.181

0.048

0.051

0.094

0.107

0.019

0.027

0.024

0.034

F1

G

H2

L2

L4

L5

1.14

4.95

1.70

5.15

0.044

0.066

0.194

0.202

10.00

10.40

0.393

0.409

16.40 typ.

0.645 typ.

13.00

14.00

0.511

0.551

2.65

2.95

0.104

0.116

L6

L7

L9

M

15.25

6.20

3.50

Diam. I 3.75

15.75

6.60

3.93

2.6 typ.

3.85

0.600

0.244

0.137

0.154

0.102 typ.

0.147

0.620

0.259

0.151

■

■

■

COOLING METHOD : C

RECOMMENDED TORQUE VALUE : 0.8M.N

MAXIMUM TORQUE VALUE : 1.0M.N

Ordering type Marking Package

STPS10L60D STPS10L60D TO-220AC

STPS10L60FP STPS10L60FP TO-220FPAC

■

EPOXY MEETS UL94,V0

Weight

1.86g

1.9g

Base qty

50

50

Delivery mode

Tube

Tube

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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