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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
DataSheet
Rev.2.3
Final
PowerManagement&Multimarket
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
1Description
SuperSO8
8
Features
•OptimizedforhighperformanceBuckconverter
•MonolithicintegratedSchottkylikediode
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Value
Unit
VDS
25
V
RDS(on),max
1.05
mΩ
ID
100
A
QOSS
38
nC
QG(0V..10V)
59
nC
Type/OrderingCode
Package
BSC010NE2LSI
PG-TDSON-8
1)
5
6
2
Marking
010NE2LI
3
6
5
4
1
Table1KeyPerformanceParameters
Parameter
7
3
2
4
7
8
1
S1
8D
S2
7D
S3
6D
G4
5D
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.3,2014-03-03
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
3
Rev.2.3,2014-03-03
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
at 25 °C
Parameter
Symbol
Values
Unit
Note/TestCondition
100
100
100
100
38
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
Min.
Typ.
Max.
-
Continuous drain current
ID
-
Pulsed drain current 2)
ID,pulse
-
-
400
A
TC=25°C
Avalanche current, single pulse 3)
IAS
-
-
50
A
TC=25°C
Avalanche energy, single pulse
EAS
-
-
100
mJ
ID=50A,RGS=25Ω
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
96
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W1)
Operating and storage temperature
Tj,Tstg
-
-
-
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
-
1.3
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB
RthJA
-
-
50
K/W
6 cm2 cooling area 1)
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
4
Rev.2.3,2014-03-03
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
V(BR)DSS
Breakdown voltage temperature
coefficient
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
15
-
mV/K ID=10mA,referencedto25°C
1.2
-
2
V
VDS=VGS,ID=250µA
IDSS
-
3
0.5
-
mA
VDS=20V,VGS=0V,Tj=25°C
VDS=20V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.1
0.9
1.4
1.05
mΩ
VGS=4.5V,ID=30A
VGS=10V,ID=30A
Gate resistance
RG
0.3
0.6
1.2
Ω
-
Transconductance
gfs
80
160
-
S
|VDS|>2|ID|RDS(on)max,ID=30A
Unit
Note/TestCondition
Min.
Typ.
Max.
25
-
dV(BR)DSS/dTj -
Gate threshold voltage
VGS(th)
Zero gate voltage drain current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
4200
5600
pF
VGS=0V,VDS=12V,f=1MHz
Output capacitance
Coss
-
1800
2400
pF
VGS=0V,VDS=12V,f=1MHz
Reverse transfer capacitance
Crss
-
180
-
pF
VGS=0V,VDS=12V,f=1MHz
Turn-on delay time
td(on)
-
6.3
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Rise time
tr
-
6.2
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
32
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Fall time
tf
-
4.6
-
ns
VDD=12V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Final Data Sheet
5
Rev.2.3,2014-03-03
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Values
Unit
Note/TestCondition
13
nC
VDD=12V,ID=30A,VGS=0to4.5V
6.7
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
-
6.9
10
nC
VDD=12V,ID=30A,VGS=0to4.5V
Qsw
-
10
-
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
29
39
nC
VDD=12V,ID=30A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.4
-
V
VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
59
78
nC
VDD=12V,ID=30A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
25
-
nC
VDS=0.1V,VGS=0to4.5V
Output charge
Qoss
-
38
51
nC
VDD=12V,VGS=0V
Unit
Note/TestCondition
Min.
Typ.
Max.
Qgs
-
10
Gate charge at threshold
Qg(th)
-
Gate to drain charge
Qgd
Switching charge
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Min.
Typ.
Max.
IS
-
-
96
A
TC=25°C
Diode pulse current
IS,pulse
-
-
400
A
TC=25°C
Diode forward voltage
VSD
-
0.56
0.7
V
VGS=0V,IF=12A,Tj=25°C
Reverse recovery charge
Qrr
-
5
-
nC
VR=15V,IF=12A,diF/dt=400A/µs
1)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
6
Rev.2.3,2014-03-03
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
5Electricalcharacteristicsdiagrams
Diagram2:Draincurrent
120
120
100
100
80
80
ID[A]
Ptot[W]
Diagram1:Powerdissipation
60
60
40
40
20
20
0
0
40
80
120
0
160
0
40
80
TC[°C]
120
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
10 µs
100 µs
102
100
0.5
1 ms
0.2
101
ZthJC[K/W]
ID[A]
10 ms
DC
0.1
10-1
0.05
0.02
0.01
100
10-1
10-1
single pulse
10-2
100
101
102
10-3
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
7
Rev.2.3,2014-03-03
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
800
2.0
5V
4.5 V
10 V
700
3.2 V
4V
600
3.5 V
1.5
4V
RDS(on)[mΩ]
ID[A]
500
3.5 V
400
300
3.2 V
200
1.0
7V
8V
10 V
0.5
3V
2.8 V
100
0
4.5 V
5V
0
1
2
0.0
3
0
10
20
VDS[V]
30
40
50
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
400
320
320
240
240
ID[A]
gfs[S]
400
160
160
150 °C
25 °C
80
0
80
0
1
2
3
4
5
0
0
VGS[V]
80
120
160
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
8
Rev.2.3,2014-03-03
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
3.0
2.5
2.5
2.0
10 mA
1.5
VGS(th)[V]
RDS(on)[mΩ]
2.0
1.5
1.0
1.0
typ
0.5
0.5
0.0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=30A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
-55 °C
25 °C
125 °C
150 °C
Ciss
102
IF[A]
C[pF]
Coss
103
101
100
Crss
102
0
5
10
15
20
25
10-1
0.0
VDS[V]
0.8
1.2
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.4
IF=f(VSD);parameter:Tj
9
Rev.2.3,2014-03-03
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
12
12 V
10
5V
25 °C
20 V
8
VGS[V]
IAV[A]
100 °C
125 °C
101
6
4
2
100
100
101
102
103
0
0
10
tAV[µs]
20
30
40
50
60
70
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Typ.drain-sourceleakagecurrent
Gate charge waveforms
10-2
125 °C
10-3
100 °C
IDSS[A]
75 °C
-4
10
10-5
10-6
25 °C
0
5
10
15
20
VSD[V]
IDSS=f(VDS);VGS=0V;parameter:Tj
Final Data Sheet
10
Rev.2.3,2014-03-03
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
6PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.3,2014-03-03
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
Dimension in mm
Figure2OutlinePackingInfoTDSON-8,dimensionsinmm/inches
Final Data Sheet
12
Rev.2.3,2014-03-03
OptiMOSTMPower-MOSFET,25V
BSC010NE2LSI
RevisionHistory
BSC010NE2LSI
Revision:2014-03-03,Rev.2.3
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.3
2014-03-03
Release of Final Version
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
13
Rev.2.3,2014-03-03
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