CM200DY 24A

CM200DY 24A
CM200DY-24A
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
A-Series Module
200 Amperes/1200 Volts
A
F
F
E
E
G2
G
E2
B
J
N
C2E1
E2
C1
H
E1
G
G1
K
K
L
(2 PLACES)
K
P
Q
P
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly and thermal management.
M NUTS
(3 PLACES)
D
Q
T THICK
U WIDTH
P
S
C
V
LABEL
R
G2
E2
C2E1
E2
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
3.70
94.0
48.0
B
C
1.89
1.14+0.004/-0.02 29.0+0.1/-0.5
Dimensions
Inches
Millimeters
L
0.26 Dia.
Dia. 6.5
M
M5 Metric
M5
N
0.79
20.0
0.63
16.0
D
3.15±0.01
80.0±0.25
P
E
0.67
17.0
Q
0.28
7.0
0.83
21.2
F
0.91
23.0
R
G
0.16
4.0
S
0.30
7.5
0.02
0.5
H
0.71
18.0
T
J
0.51
13.0
U
0.110
2.8
12.0
V
0.16
4.0
K
rev. 6/05
0.47
Applications:
£ AC Motor Control
£ UPS
£ Battery Powered Supplies
Ordering Information:
Example: Select the complete
part module number you
desire from the table below -i.e.
CM200DY-24A is a 1200V (VCES),
200 Ampere Dual IGBTMOD™
Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
200
24
1
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DY-24A
Dual IGBTMOD™ A-Series Module
200 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Symbol
CM200DY-24A
Units
Tj
–40 to 150
°C
Junction Temperature
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E Short)
VCES
1200
Volts
Gate-Emitter Voltage (C-E Short)
VGES
±20
Volts
IC
200
Amperes
ICM
400**
Amperes
IE
200
Amperes
Peak Emitter Current***
IEM
400**
Amperes
Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C)
PC
1340
Watts
Mounting Torque, M5 Main Terminal
—
30
in-lb
Mounting Torque, M6 Mounting
—
40
in-lb
—
310
Grams
VISO
2500
Volts
Collector Current (DC, TC = 86°C*)
Peak Collector Current
Emitter Current*** (TC = 25°C)
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 20mA, VCE = 10V
6.0
7.0
8.0
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 200A, VGE = 15V, Tj = 25°C
—
2.1
3.0
Volts
IC = 200A, VGE = 15V, Tj = 125°C
—
2.4
—
Volts
Total Gate Charge
QG
VCC = 600V, IC = 200A, VGE = 15V
—
1000
—
nC
Emitter-Collector Voltage**
VEC
IE = 200A, VGE = 0V
—
—
3.8
Volts
Min.
Typ.
Max.
Units
—
—
35
nf
—
—
3
nf
—
—
0.68
nf
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Inductive
Turn-on Delay Time
td(on)
Load
Rise Time
Switch
Turn-off Delay Time
Time
Fall Time
Test Conditions
VCE = 10V, VGE = 0V
—
—
130
ns
—
—
100
ns
tr
VCC = 600V, IC = 200A,
td(off)
VGE1 = VGE2 = 15V, RG = 1.6Ω,
—
—
450
ns
tf
Inductive Load
—
—
350
ns
Diode Reverse Recovery Time***
trr
Switching Operation,
—
—
150
ns
Diode Reverse Recovery Charge***
Qrr
IE = 200A
—
9.0
—
µC
*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
22
rev. 6/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DY-24A
Dual IGBTMOD™ A-Series Module
200 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case*
Rth(j-c)Q
Per IGBT 1/2 Module
—
—
0.093
°C/W
Thermal Resistance, Junction to Case*
Rth(j-c)D
Per FWDi 1/2 Module
—
—
0.17
°C/W
Rth(c-f)
Per 1/2 Module, Thermal Grease Applied
—
0.022
—
°C/W
1.6
—
21
Ω
Contact Thermal Resistance
External Gate Resistance
RG
*TC, Tf measured point is just under the chips.
15
300
12
200
11
100
10
9
0
2
4
6
8
1
100
0
200
300
8
6
IC = 200A
4
IC = 80A
2
0
400
IC = 400A
6
8
10
12
14
16
18
COLLECTOR-CURRENT, IC, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
102
Tj = 25°C
Tj = 125°C
0
1
2
3
4
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
rev. 6/05
Cies
td(off)
101
Coes
100
tf
102
td(on)
tr
101
VCC = 600V
VGE = 15V
RG = 1.6Ω
Tj = 125°C
Inductive Load
Cres
VGE = 0V
5
20
103
102
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
2
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
103
101
3
0
10
VGE = 15V
Tj = 25°C
Tj = 125°C
SWITCHING TIME, (ns)
0
10
4
Tj = 25°C
13
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE =
20V
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
400
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
100
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
3
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DY-24A
Dual IGBTMOD™ A-Series Module
200 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
102
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
10-3
5
0
0
350
700
1050
1400
101
ESW(on)
ESW(off)
100
101
102
103
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
102
VCC = 600V
VGE = 15V
IC = 200A
Tj = 125°C
Inductive Load
C Snubber at Bus
101
102
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10-2
10-1
100
101
100
101
102
Err
VCC = 600V
VGE = 15V
RG = 1.6Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
102
EMITTER CURRENT, IE, (AMPERES)
GATE RESISTANCE, RG, (Ω)
10-2
VCC = 600V
10
COLLECTOR CURRENT, IC, (AMPERES)
100
100
10-1
VCC = 400V
VCC = 600V
VGE = 15V
RG = 1.6Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
GATE CHARGE, QG, (nC)
ESW(on)
ESW(off)
10-3
15
102
EMITTER CURRENT, IE, (AMPERES)
101
100
IC = 200A
103
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
102
101
103
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
Irr
trr
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
102
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
102
101
101
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
103
VCC = 600V
VGE = 15V
RG = 1.6Ω
Tj = 25°C
Inductive Load
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
REVERSE RECOVERY TIME, trr, (ns)
103
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
GATE CHARGE VS. VGE
Err
101
VCC = 600V
VGE = 15V
IC = 200A
Tj = 125°C
Inductive Load
C Snubber at Bus
100
100
101
102
GATE RESISTANCE, RG, ()
101
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.093°C/W
(IGBT)
Rth(j-c) =
0.17°C/W
(FWDi)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
44
rev. 6/05
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