AO6401A 30V P-Channel MOSFET General Description Product Summary

AO6401A 30V P-Channel MOSFET General Description Product Summary
AO6401A
30V P-Channel MOSFET
General Description
Product Summary
The AO6401A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
ID (at VGS=-10V)
-30V
-5A
RDS(ON) (at VGS=-10V)
< 47mΩ
VDS
RDS(ON) (at VGS =-4.5V)
< 64mΩ
RDS(ON) (at VGS=-2.5V)
< 85mΩ
TSOP6
Top View
D
Bottom View
Top View
D
1
6
D
2
5
D
G
3
4
S
D
G
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 1: Mar 2011
Steady-State
Steady-State
A
2
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
V
-28
PD
TA=70°C
±12
-4
IDM
TA=25°C
B
Units
V
-5
ID
TA=70°C
C
Maximum
-30
RθJA
RθJL
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-55 to 150
Typ
47.5
74
37
°C
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO6401A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-28
nA
-1.3
V
39
47
60
74
VGS=-4.5V, ID=-4A
45
64
mΩ
VGS=-2.5V, ID=-1A
59
85
mΩ
18
TJ=125°C
Forward Transconductance
VDS=-5V, ID=-5A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
A
-0.7
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
µA
±100
gFS
Crss
Units
-0.9
VGS=-10V, ID=-5A
Static Drain-Source On-Resistance
Max
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
645
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
S
-1
V
-2.5
A
780
pF
80
4
mΩ
pF
55
80
pF
7.8
12
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
14
17
nC
Qg(4.5V) Total Gate Charge
7
8.5
nC
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
VGS=-10V, VDS=-15V, ID=-5A
1.5
nC
Gate Drain Charge
2.5
nC
Turn-On DelayTime
6.5
ns
3.5
ns
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
41
ns
9
ns
trr
Body Diode Reverse Recovery Time
IF=-5A, dI/dt=100A/µs
11
Qrr
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
3.5
13.5
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Mar 2011
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Page 2 of 5
AO6401A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
-4.5V
-10V
VDS=-5V
20
15
-7V
-ID(A)
-ID (A)
15
-2.5V
10
125°C
10
5
25°C
5
VGS=-2.0V
0
0
0
1
2
3
4
0
5
0.5
100
1.5
2
2.5
3
Normalized On-Resistance
1.8
80
RDS(ON) (mΩ )
1
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=-2.5V
60
VGS=-4.5V
40
VGS=-10V
1.6
VGS=-10V
ID=-5A
1.4
17
VGS=-4.5V
5
ID=-4A
2
1.2
VGS=-2.5V
ID=-1A
1
10
0.8
20
0
2
4
6
8
0
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
150
1.0E+01
ID=-5A
130
1.0E+00
110
1.0E-01
90
-IS (A)
RDS(ON) (mΩ )
40
125°C
125°C
1.0E-02
1.0E-03
70
25°C
50
25°C
1.0E-04
1.0E-05
30
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Mar 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO6401A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=-15V
ID=-5A
8
800
Capacitance (pF)
-VGS (Volts)
Ciss
6
4
600
400
2
200
0
0
0
5
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
Coss
Crss
0
100.0
5
10
15
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
25
10000
TA=25°C
10µs
RDS(ON)
limited
100µs
1.0
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
1000
Power (W)
-ID (Amps)
10.0
100
10
10s
DC
0.0
1
0.01
0.1
1
10
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=110°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Mar 2011
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Page 4 of 5
AO6401A
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 1: Mar 2011
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5
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