2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)

2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Preliminary Datasheet
2SK1151(L), 2SK1151(S),
2SK1152(L), 2SK1152(S)
Silicon N Channel MOS FET
R07DS0397EJ0300
(Previous: REJ03G0907-0200)
Rev.3.00
May 16, 2011
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK(L)-(1))
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
D
4
1. Gate
2. Drain
3. Source
4. Drain
G
1
2
3
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
2SK1151
2SK1152
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
Ratings
450
500
Unit
V
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
±30
1.5
6
1.5
20
150
–55 to +150
V
A
A
A
W
°C
°C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at TC = 25°C
R07DS0397EJ0300 Rev.3.00
May 16, 2011
Page 1 of 6
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Drain to source breakdown 2SK1151
voltage
2SK1152
Gate to source breakdown voltage
Gate to source leak current
2SK1151
Zero gate voltage drain
current
2SK1152
V(BR)GSS
IGSS
Gate to source cutoff voltage
2SK1151
Static drain to source on
state resistance
2SK1152
RDS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note:
V(BR)DSS
IDSS
VGS(off)
VDF
trr
Min
450
500
±30
—
—
Typ
—
Max
—
Unit
V
Test conditions
ID = 10 mA, VGS = 0
—
—
—
—
±10
100
V
μA
μA
2.0
—
—
0.6
—
—
—
—
—
—
—
—
3.5
4.0
1.1
160
45
5
5
10
20
10
3.0
5.5
6.0
—
—
—
—
—
—
—
—
V
Ω
IG = ±100 μA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 1 A, VGS = 10 V *3
S
pF
pF
pF
ns
ns
ns
ns
ID = 1 A, VDS = 20 V *3
—
—
1.0
220
—
—
V
ns
IF = 1.5 A, VGS = 0
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 1 A, VGS = 10 V,
RL = 30 Ω
IF = 1.5 A, VGS = 0,
diF/dt = 100 A/μs
3. Pulse test
R07DS0397EJ0300 Rev.3.00
May 16, 2011
Page 2 of 6
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
Drain Current ID (A)
25
°C
)
2SK1151
2SK1152
1
100
10
1,000
Typical Output Characteristics
Typical Transfer Characteristics
2.0
15 V
5V
Drain Current ID (A)
6V
10 V
Pulse Test
0.8
4V
0.4
VDS = 20 V
Pulse Test
1.6
1.2
0.8
–25°C
75°C
0.4
VGS = 3.5 V
4
8
12
TC = 25°C
16
20
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
20
Pulse Test
16
12
2A
8
1A
4
ID = 0.5 A
4
8
12
16
Gate to Source Voltage VGS (V)
R07DS0397EJ0300 Rev.3.00
May 16, 2011
20
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage
VDS (on) (V)
=
Drain to Source Voltage VDS (V)
4.5 V
0
)
ot
Sh
C
0.01
150
1.2
0
(T
Case Temperature TC (°C)
2.0
1.6
100
n
0.1
Ta = 25°C
50
io
(1
at
0.3
s
s
pe
r
m
Channel Dissipation Pch (W)
O
μs
10
C
0.03
0
Drain Current ID (A)
D
m
μs
0
1
=
10
1.0
10
PW
20
10
3
O
a pe
by rea rat
R is ion
DS lim in
(o
i t
n) ted his
10
30
100
50
Pulse Test
VGS = 10 V
20
10
15 V
5
2
1
0.05
0.1
0.2
0.5
1.0
2
5
Drain Current ID (A)
Page 3 of 6
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Preliminary
Forward Transfer Admittance ⏐yfs⏐ (S)
Static Drain-Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Temperature
10
ID = 2 A
8
VGS = 10 V
Pulse Test
6
1A
0.5 A
4
2
0
–40
0
40
80
120
160
VDS = 20 V
Pulse Test
2
1.0
TC = 25°C
0.5
75°C
0.2
0.1
0.1
0.5
0.2
5
Typical Capacitance
vs. Drain to Source Voltage
1,000
di/dt = 100 A/μs, Ta = 25°C
VGS = 0
Pulse Test
50
VGS = 0
f = 1 MHz
Ciss
100
Coss
10
20
Crss
0.1
0.2
0.5
1.0
2
1
5
0
Reverse Drain Current IDR (A)
16
12
300
VGS
8
200
VDD = 400 V
250 V
100 V
100
2
4
ID = 1.5 A
6
Gate Charge Qg (nc)
R07DS0397EJ0300 Rev.3.00
May 16, 2011
8
40
50
4
0
10
•
VGS = 10 V VDD = 30 V
PW = 2 μs, duty < 1%
•
50
Switching Time t (ns)
250 V
400 V
30
100
20
100 V
VDS
20
Switching Characteristics
Gate to Source Voltage VGS (V)
500
10
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
0
2
Body to Drain Diode Reverse
Recovery Time
100
400
1.0
Drain Current ID (A)
200
10
0.05
Drain to Source Voltage VDS (V)
–25°C
Case Temperature TC (°C)
Capacitance C (pF)
Reverse Recovery Time trr (ns)
5
0.05
1,000
500
Forward Transfer Admittance
vs. Drain Current
td (off)
20
tf
10
td (on)
5
tr
2
1
0.05
0.1
0.2
0.5
1.0
2
5
Drain Current ID (A)
Page 4 of 6
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Preliminary
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
2.0
Pulse Test
1.6
1.2
0.8
0.4
5 V, 10 V
VGS = 0, –10 V
0
0.4
0.8
1.2
1.6
2.0
Normalized Transient Thermal Impedance γS (t)
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
D=1
1.0
0.5
0.3
0.2
0.1
0.1
0.05
θch–c(t) = γS (t) • θch–c
θch–c = 6.25°C/W, TC = 25°C
PDM
PW
D=
T
PW
T
0.02
0.03
lse
0.01 ot Pu
h
1S
0.01
10 μ
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveforms
Vin Monitor
90 %
Vout Monitor
Vin
D.U.T
10 %
RL
Vout
50 Ω
Vin = 10 V
R07DS0397EJ0300 Rev.3.00
May 16, 2011
.
VDD =. 30 V
td (on)
10 %
90 %
tr
10 %
90 %
td (off)
tf
Page 5 of 6
2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S)
Preliminary
Package Dimensions
• 2SK1151(L), 2SK1152(L)
JEITA Package Code
⎯
RENESAS Code
PRSS0004ZD-A
Previous Code
DPAK(L)-(1) / DPAK(L)-(1)V
1.7 ± 0.5
Package Name
DPAK(L)-(1)
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
MASS[Typ.]
0.42g
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
16.2 ± 0.5
1.2 ± 0.3
2.29 ± 0.5
0.55 ± 0.1
• 2SK1151(S), 2SK1152(S)
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28g
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
6.5 ± 0.3
5.6 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Package Name
DPAK(S)
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
Ordering Information
Orderable Part Number
2SK1151L-E
2SJ1151STR-E
2SK1152L-E
2SJ1152STR-E
R07DS0397EJ0300 Rev.3.00
May 16, 2011
Quantity
2160 pcs
3000 pcs
2160 pcs
3000 pcs
Shipping Container
Box (Tube)
Taping
Box (Tube)
Taping
Page 6 of 6
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