BCR10LM-12LB Datasheet

BCR10LM-12LB Datasheet
Preliminary Datasheet
BCR10LM-12LB
Triac
R07DS0064EJ0100
Rev.1.00
Jul 27, 2010
Medium Power Use
Features




 The Product guaranteed maximum junction
temperature 150C
 Insulated Type
 Planar Type
 UL Recognized : File No. E223904
IT (RMS) : 10 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III: 30 mA
Viso : 1800 V
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
2
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
1
2 3
Applications
Switching mode power supply, light dimmer, electronic switch, hair dryer, Television, Stereo system, refrigerator,
Washing machine, infrared kotatsu, and carper, small motor controller, SS relay, solenoid driver, copying machine,
electric tool, electric heater control, and other general purpose control applications
Parameter
Symbol
Note1
Repetitive peak off-state voltage
Non-repetitive peak off-state voltageNote1
R07DS0064EJ0100 Rev.1.00
Jul 27, 2010
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Page 1 of 7
BCR10LM-12LB
Preliminary
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
10
Unit
A
Surge on-state current
ITSM
100
A
I2 t
41.6
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
W
W
V
A
C
C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 103C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T1  T2  G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state
current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
Test conditions
Tj = 150C, VDRM applied
VTM
—
—
1.5
V
Tc = 25C, ITM = 15 A,
instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger curentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
30
30
30
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
Rth (j-c)
0.2/0.1
—
—
—
—
4.1
V
C/W
Tj = 125C/150C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
10/1
—
—
V/s
Tj = 125C/150C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –5.0 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0064EJ0100 Rev.1.00
Jul 27, 2010
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR10LM-12LB
Preliminary
Performance Curves
100
7
5
90
3
2
Surge On-State Current (A)
102
Tj = 150°C
101
7
5
3
2
Tj = 25°C
100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
70
60
50
40
30
20
10
2 3 4 5 7 101
2 3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
5
3
2 VGM = 10V
Gate Voltage (V)
80
0
100
4.0
101
7
5
3 V = 1.5V
2 GT
100
7
5
3
2
IRGT I
PGM = 5W
PG(AV) =
0.5W
IGM = 2A
IFGT I, IRGT III
10–1
7
VGD = 0.1V
5
1
2
10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
7
5
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
Rated Surge On-State Current
103
Typical Example
7
5
3
IRGT I, IRGT III
2
102
IFGT I
7
5
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS0064EJ0100 Rev.1.00
Jul 27, 2010
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102
4.5
103
104
100
101
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10–1
102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR10LM-12LB
Preliminary
7
5
3
2
No Fins
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
6
4
2
0
0
2
4
6
8
10
12
14
16
Allowable Ambient Temperature vs.
RMS On-State Current
160
Curves apply regardless
of conduction angle
Ambient Temperature (°C)
Case Temperature (°C)
8
Allowable Case Temperature vs.
RMS On-State Current
120
100
80
60
40
360° Conduction
Resistive,
inductive loads
20
0
2
4
6
8
10
12
14
16
140
120
All fins are black painted
aluminum and greased
120 120 t2.3
100
100 100 t2.3
80
60 60 t2.3
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0
2
6
4
8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
12 360° Conduction
Resistive,
10 inductive loads
RMS On-State Current (A)
140
0
14
Conduction Time (Cycles at 60Hz)
160
Ambient Temperature (°C)
16
On-State Power Dissipation (W)
103
Maximum On-State Power Dissipation
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
R07DS0064EJ0100 Rev.1.00
Jul 27, 2010
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
106
7 Typical Example
5
3
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Page 4 of 7
BCR10LM-12LB
Preliminary
103
7
5
4
3
2
Latching Current vs.
Junction Temperature
Latching Current (mA)
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
103
7
5
3
2
Distribution
102
T2+, G–
Typical Example
7
5
3
2
101
7
5
3
2
T2+, G+
Typical Example
T2–, G–
100
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
100
80
60
III Quadrant
40
20
I Quadrant
0
1
2
10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
140
Typical Example
Tj = 150°C
120
100
80
60
40
III Quadrant
20
I Quadrant
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
R07DS0064EJ0100 Rev.1.00
Jul 27, 2010
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
7
5 Typical Example
Tj = 125°C
3 IT = 4A
2 τ = 500μs
VD = 200V
f
= 3Hz
101
7
Minimum
5
Characteristics
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
Value
I Quadrant
III Quadrant
100
7 0
10
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR10LM-12LB
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
3
2
Minimum
Characteristics
Value
100
7
100
5 7 101
2 3
2 3
5 7 102
103
7
5
4
3
2
Typical Example
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
6Ω
6Ω
Load
C1
A
6V
V
Test Procedure I
R1
A
6V
330Ω
V
330Ω
Test Procedure II
C0
R0
C1 = 0.1 to 0.47μF C0 = 0.1μF
R1 = 47 to 100Ω
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS0064EJ0100 Rev.1.00
Jul 27, 2010
Page 6 of 7
BCR10LM-12LB
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
⎯
Previous Code
TO-220FL
RENESAS Code
PRSS0003AF-A
Unit: mm
6.5 ± 0.3
3.0 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
12.5 ± 0.5
15.0 ± 0.3
10.0 ± 0.3
MASS[Typ.]
1.5g
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
0.40 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Order Code
Lead form
Straight type
Lead form
Note:
Standard packing
Plastic Magazine (Tube)
Plastic Magazine (Tube)
Quantity
50
50
Standard order code
Type name
Type name – Lead forming code
Standard order
code example
BCR10LM-12LB
BCR10LM-12LB-A8
Please confirm the specification about the shipping in detail.
R07DS0064EJ0100 Rev.1.00
Jul 27, 2010
Page 7 of 7
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