Introduction to Physical Metallurgy and Engineering Materials

MODULE‐I (16 Lectures)
Classification of Engineering Materials, Engineering properties of materials.
Characteristic property of metals, bonding in solids, primary bonds like ionic, covalent and metallic bond, crystal systems, common crystal structure of metals, representations of planes and directions in crystals, atomic packing in crystals, calculation of packing density, voids in common crystal structures and imperfections crystals.
Chapter-1
Introduction to Engineering Materials
Introduction
Materials play an important role for our existence, for our day to day needs ,and even for our survival. In the stone age the naturally accessible materials were stone, wood, bone, fur etc
Gold was the 1 st
metal used by the mankind followed by copper. In the bronze age Copper and its alloy like bronze was used and in the iron age they discovered Iron (sponge iron & later pig iron).
Number of Materials 40 – 80,000!
General Definition of Material
According to Webster’s dictionary, materials are defined as ‘substances of which something
is composed or made’
Engineering Material: Part of inanimate matter, which is useful to engineer in the practice of his profession (used to produce products according to the needs and demand of society)
Material Science: Primarily concerned with the search for basic knowledge about internal structure, properties and processing of materials and their complex interactions/relationships
Material Engineering: Mainly concerned with the use of fundamental and applied knowledge of materials, so that they may be converted into products, as needed or desired by the society
(bridges materials knowledge from basic sciences to engineering disciplines)
Note: Material science is the basic knowledge end of materials knowledge spectrum, where as, material engineering is applied knowledge end and there is no demarcation line between the two
subjects of interest
Evolution of Engineering Materials
Why Material Science & Engineering is important to technologists?
Examples:
• Mechanical engineers search for high temp material so that gas turbines, jet engines etc can operate more efficiently and wear resistance materials to manufacture bearing materials
• Electrical engineers search for materials by which electrical devices or machines can be operated at a faster rate with minimum power losses
• Aerospace & automobile engineers search for materials having high strength-toweight ratio
• Electronic engineers search for material that are useful in the fabrication & miniaturization of electronic devices
• Chemical engineers search for highly corrosion-resistant materials
Note: All these demands may be fulfilled when the internal structure and engineering properties are known to an engineer or technologist
Classification
It is the systematic arrangement or division of materials into groups on the basis of some common characteristic
1. According to General Properties
2. According to Nature of Materials
3. According to Applications
1. According to General Properties
(a). Metals (e.g. iron, aluminium, copper, zinc, lead, etc)
Iron as the base metal, and range from plain carbon (> 98 % Fe) to (i). Ferrous: high alloy steel (< 50 % alloying elements), e.g. cast iron, wrought iron, steel, alloys like high-speed steel, spring steel, etc
(ii). Non-Ferrous: Rest of the all other metals and their alloys, e.g. copper, aluminium, zinc lead, alloys like brass, bronze, duralumin, etc
(b). Non-Metals (e.g. leather, rubber, asbestos, plastics, etc)
2. According to Nature of Materials
(a). Metals: e.g. Iron & Steel, Alloys &Superalloys, Intermetallic Compounds, etc
(b). Ceramics: e.g. Structural Ceramics (high-temperature load bearing), Refractories
(corrosion-resistant, insulating), Whitewares (porcelains), Glass, Electrical Ceramics
(capacitors, insulators, transducers), Chemically Bonded Ceramics (cement & concrete)
(c).Polymers: e.g. Plastics, Liquid Crystals, Adhesives
(d). Electronic Materials: e.g. Silicon, Germanium, Photonic materials (solid-state lasers,
LEDs)
(e). Composites: e.g. Particulate composites (small particles embedded in a different material), Laminate composites (golf club shafts, tennis rackets), Fiber reinforced composites
(fiberglass)
(f). Biomaterials: e.g. Man-made proteins (artificial bacterium), Biosensors, etc
(g). Advanced / Smart Materials: e.g. materials in computers (VCRs, CD Players, etc), fibreoptic systems, spacecrafts, aircrafts, rockets, shape-memory alloys, piezoelectric ceramics, magnetostrictive materials, optical fibres, microelectromechanical (MEMs) devices, electrorheological / magnetorheological fluids, Nanomaterials, etc
3. According to Applications
(a). Electrical Materials: e.g. conductors, insulators, dielectrics, etc
(b). Electronic Materials: e.g. conductors, semi-conductors, etc
(c). Magnetic Materials: e.g. ferromagnetic, paramagnetic & diamagnetic materials, etc
(d). Optical Materials: e.g. glass, quartz, etc
(e). Bio Materials: e.g. man-made proteins, artificial bacterium
Engineering
Materials
Metals Ceramic s
Ferrous
Cast Iron
Carbon Steels
Alloy Steels
Stainles s
Steels
Alumina
Diamond
Magnesia
Silicon
Carbide
Zirconia
Non-
Ferrous
Aluminium
Brass
Bronze
Copper
Lead
Magnesium
Nickel
Tin
Zinc
Titanium
Polymers
Thermoplastic
ABS
Acrylic
Nylon
Polyethylene
Polystyrene
Vinyl
Composites
Carbon
Fiber
Ceramic
Matrix
Glass
Fiber
Metal
Matrix
Thermosetting
Epoxy
Phenolic
Polyester
Electronic
Materials
Silicon
Germanium
Photonic
Materials
Solid-State
Lasers
LEDs
Bio-
Materials
Man-Made
Proteins
Artificial
Bacterium
Biosensors
Elastomers
Butyl
Fluorocarbon
Neoprene
Rubber
Silicone
Advanced
/ Smart
Materials
Shape-Memory Alloys
Piezoelectric Ceramics
Magnetostrictive Materials
Optical Fibres
Electrorheological Fluids
Nanomaterials
Difference between Metals & Non-Metals
Property Metals Non-Metals
Structure
State
Luster
Crystalline
Generally solids at room temp.
Metallic luster
Amorphic
Gaseous & solid at ordinary temp.
No metallic luster (except iodine & graphite)
Conductivity Good conductors of heat & electricity
Bad conductors
Malleability Malleable Not malleable
Ductility
Hardness
Ductile
Generally hard
Not ductile
Hardness varies
Electrolysis
Excitation of valence electron by e.m.f.
Density
Form anions
Easy
High
Form anioins
Difficult
Low
1. Material Properties
• Physical: e.g. appearance, shape, weight, boiling point, melting point, freezing point, density, glass transition temperature, permeability
• Mechanical: e.g. strength (tensile, compressive, shear, torsion, bending), elasticity, plasticity, ductility, malleability, rigidity, toughness, hardness, brittleness, impact, fatigue, creep, strain hardening, Bauschinger effect, strain rate effect, vibration resistance, wear
• Thermal: e.g. thermal conductivity, expansion coefficient, resistivity, thermal shock resistance, thermal diffusivity
Types of Force / Stress System
• Electrical: e.g. conductivity, resistivity, dielectric strength, thermoelectricity, superconductivity, electric hysteresis
• Magnetic: e.g. ferromagnetism, paramagnetism, diamagnetism, magnetic permeability, coercive force, curie temperature, magnetic hysteresis
• Chemical: e.g. reactivity, corrosion resistance, polymerization, composition, acidity, alkalinity
• Optical: e.g. reflectivity, refractivity, absorptivity, transparency, opaqueness, color, luster
Metallurgical: e.g. grain size, heat treatment done / required, anisotropy, hardenability
Imperfections in Crystals
Introduction to Crystal Geometry
¾ Materials may be classified as Crystalline or Non-Crystalline structures
¾ Crystalline solid can be either Single Crystal Solid (crystal lattice of entire sample is continuous and unbroken to edges of sample with no grain boundary) or Poly Crystal
Solid (aggregate of many crystals separated by well-defined boundaries)
¾ Cluster of crystals with identical structure (same crystallographic planes & directions) are known as Grains separated by Grain Boundaries
¾ X-ray diffraction analysis shows that atoms in metal crystal are arranged in a regular, repeated 3-D Pattern known as CrystallineStructure
Example:
Ceramic: Inorganic non-metallic crystalline (regular internal Structure) materials
Glass: Inorganic non-metallic non-crystalline / amorphous (completely disordered form) material
¾ Arrangement of atoms can be most simply portrayed by Crystal Lattice, in which atoms are visualized as, Hard Balls located at particular locations
¾ Space Lattice / Lattice: Periodic arrangement of points in space with respect to three dimensional network of lines
¾ Each atom in lattice when replaced by a point is called Lattice Point, which are the intersections of above network of lines
¾ Arrangement of such points in 3-D space is called Lattice Array and 3-D space is called Lattice Space
¾ Tiny block formed by arrangement of small group of atoms is called Unit Cell. It is chosen to represent the symmetry of crystal structure, and may be defined as:
Finite representation of infinite lattice
Small repeat entity
Basic structural unit
Building block of crystal structure
Can generate entire crystal by translation
Lattice Parameters
¾ Six lattice parameters a, b, c,
α
,
β
,
γ
¾ Typically in the order of few Angstroms (few tenths of nanometer)
¾ Example: Cubic structure has following lattice parameters:
a = b = c and
α = β = γ = 90 o
Types of Crystal
Cubic, Monoclinic, Triclinic, Tetragonal, Orthorhombic, Rhombohedral and Hexagonal
No.
Crystal Type Lattice Parameters
1.
Cubic
2.
Tetragonal
3.
Orthorhombic
4.
Rhombohedral
5.
Hexagonal
6.
Monoclinic
7.
Triclinic a = b = c,
α = β = γ = 90
o a = b ≠ c,
α = γ = 90
o
=
β
a ≠ b ≠ c,
α = γ = β = 90
o a = b = c,
α = β = γ ≠ 90
o a = b ≠ c,
α = β = 90
o
,
γ = 120
o a ≠ b ≠ c,
α = γ = 90
o
≠
β
a ≠ b ≠ c,
α ≠ γ ≠ β ≠ 90
o
Principal Metal Crystal Structures
¾ Simple Cubic Lattice Structure
¾ Body Centered Cubic (BCC) Structure
Fluorite, Garnet, Pyrite
Zircon
Topaz
Tourmaline
Corundum
Kunzite
Amazonite
Examples
¾ Face Centered Cubic (FCC) Structure
Simple Cubic Lattice
¾ Most elementary crystal structure with three mutually perpendicular axes arbitrarily placed through one of the corners of a cell
¾ Each corners occupied with one atom
¾ Example: alpha polonium
SC Structure
(i). Aggregate of atoms (ii). Hard Sphere Unit Cell
Body Centered Cubic (BCC) Structure
¾ BCC cell has an atom at each corner and another atom at body center of cube
¾ Each atom at corner is surrounded by eight adjacent atoms
¾ Example: alpha iron, chromium, molybdenum & tungsten
BCC Structure
i). Aggregate of atoms (ii). Hard Sphere Unit Cell
Face Centered Cubic (FCC) Structure
¾ Atoms at each corner of cube, and in addition there is an atom at the center of each cube’s face
¾ Example: aluminium, copper, gold, lead, silver and nickel
FCC Structure
(i). Aggregate of atoms
(ii). Hard Sphere Unit Cell
Hexagonal Close-packed (HCP) Structure
¾ Unit cell has an atom at each of twelve corners of hexagonal prism, with one atom at centre of each of two hexagonal faces and three atoms in body of cell
¾ Example: zinc, lithium, magnesium, beryllium
Comparison
Sl.
No.
APF (Atomic Packing
Factor)
(Ratio of vol . of atoms in unit cell to unit cell vol.)
Co-ordination Number
(No. of nearest neighbor atoms)
SC
BCC
0.52
0.68
6
8
FCC 0.72
Close-Packed Structures
¾ How can metal atoms be stacked to fill empty spaces in the lattice?
¾ Can these 2-D layers be stacked to make 3-D structures
12
Example: Close-Packed FCC Structure
ABC Stacking Sequence
Example: Close-Packed HCP Structure
AB Stacking Sequence
ABC Stacking Sequence
Crystallographic Planes & Directions
¾ Crystallographic Planes &Directions are specified with respect to the reference axes in terms of ‘Miller Indices’, which is the system of notation of planes within a crystal of space lattice
¾ Example: SC structure is chosen for understanding
¾ Crystallographic Plane is specified in terms of length of its intercepts on three mutually perpendicular axes. To simplify it, reciprocals of these intercepts reduced to lowest common denominator (LCM) are used as miller indices, e.g. plane ABCD in figure is parallel to x and z axes and intersects y-axis at one interatomic distance ‘a
0
’, therefore miller indices of the plane are 1/
∞, 1/ a
0
, 1/
∞ or
(hkl) = (010)
¾ Plane EBCF is designated as ( 00) plane, where bar indicates that plane intersects the axis in negative direction
¾ Crystallographic Directions are indicated by integers in brackets like [uvw], where reciprocals are never used, e.g. direction ‘FD’ is obtained by moving out from origin, a distance ‘a
0
’ along positive x-axis and moving same distance along positive y-axis also, therefore, the crystallographic direction will be given as [110]
¾ Example: Ionic crystals like NaCl, LiF (not for metals)
Note: For simple cubic lattice only, direction is always perpendicular the plane having same indices
Index system for crystal directions and planes
Crystal directions:
The direction is specified by the three integers [n
1 n
2 n
3
]. If the numbers n
1 n
2 n
3 have a common factor, this factor is removed. For example, [111] is used rather than [222], or [100], rather than [400]. When we speak about directions, we mean a whole set of parallel lines, which are equivalent due to transnational symmetry. Opposite orientation is denoted by the negative sign over a number. For example:
Crystal planes: The orientation of a plane in a lattice is specified by Miller indices. They are defined as follows. We find intercept of the plane with the axes along the primitive translation vectors a
1
, a
2 and a
3
. Let’s these intercepts be x, y, and z, so that x is fractional multiple of a
1
,
y is a fractional multiple of a
2 and z is a fractional multiple of a
3
. Therefore we can measure x, y, and z in units a
1
, a
2 and a
3 respectively. We have then a triplet of integers (x y z). Then we invert it
(1/x 1/y
1/z) and reduce this set to a similar one having the smallest integers by multiplying by a common factor. This set is called Miller indices of the plane (hkl). For example, if the plane intercepts
x, y, and z in points 1, 3, and 1, the index of this plane will be (313).
The orientation of a crystal plane is determined by three points in the plane, provided they are not collinear. If each point lay on a different crystal axis, the plane could be specified by giving the coordinates of the points in terms of the lattice constants a, b, c. A notation conventionally used to describe lattice points (sites), directions and planes is known as Miller Indices.
A crystal lattice may be considered as an assembly of equidistant parallel planes passing through the
lattice points and are called lattice planes. In order to specify the orientation one employs the so called Miller indices.
Crystal direction is the direction (line) of axes or line from the origin and denoted as [111],
[100],
[010] etc.
How to find Miller Indices:
To determine the indices for the plane p in Figure 2,
-first we have to find the intercepts with the axes along the basis vector be x, y, z. We form the fractional triplet Let these intercepts
-Take reciprocal to this set.
-Then reduce this set to a similar one having the smallest integers multiplying by common factor.
To determine the Miller indices:
(i) Find the intercepts on the axes along the basis vector
→→→
cba ,, in terms of the lattice constants a,b and c. The axes may be those of a primitive or nonprimitive cell.
Let these intercepts be x, y, z. We form the fractional triplet
.
(ii) Take the reciprocals of these numbers.
(iii) Reduce the numbers to three smallest integers by multiplying the numbers with the same integral multipliers.
This last set is enclosed in parentheses (h k l), is called the index of the plane or Miller
Indices.
The Miller indices specify not just one plane but an infinite set of equivalent planes. Note that for cubic crystals the direction [hkl] is perpendicular to a plane (hkl) having the same indices, but this is not generally true for other crystal systems. Examples of the planes in a cubic system:
Allotropy / Polymorphism
¾ Two or more distinct crystal structures for the same material at different temperature
& pressure
¾ Examples: iron (
α-iron &γ-iron), carbon (graphite & diamond), tin (α-tin &β-tin)
Imperfection / Defects In Crystals
In actual crystals, imperfection or defects are always present, which are important to
understand, as they influence the properties of material
Classifications of Defects
(i). Point Defects (Zero Dimensional Defects)
(b). Schottky Imperfections
(e). Compositional Defect
Substitutional Defect
Interstitial Impurity
(f). Electronic Defect
(ii). Line Defects / Dislocations (One Dimensional Defects)
(iii). Surface / Plane Defects (Two Dimensional Defects)
(a). External Defects
Grain Boundary Defect
Tilt Boundary Defect
Twin Boundary Defect
(iv). Volume Defects (Three Dimensional Defects
(I). Point Defects (Zero Dimensional Defects)
¾ Imperfect point like regions in crystal (size is one or two atomic diameter)
¾ Completely local in effect, i.e. vacant lattice site
¾ Always present in crystals
¾ Created by thermal fluctuations, quenching (high rate of cooling), severe deformation of crystal lattice (hammering or rolling) or external bombardment by atoms / high energy particles
(a). Vacancy
¾ Simplest type of point defect involving a missing atom within crystal lattice of metal, which results due to imperfect packing during original crystallization process or by thermal vibrations of atoms at very high temperature
(b). Schottky Imperfections
Involve vacancies in pair of ions having opposite charges and are found in compounds, which maintain charge balance, e.g. alkali halides
(C). Interstitialcy
Addition of an extra atom in the crystal lattice, when atomic packing density / factor is low and the foreign atom may be an impurity or alloying atom (generally very less in number as additional energy is required to force atom / ion to occupy new position)
(d). Frenkel Defect
Ion dislodged from its crystal lattice into an interstitial site (generally very less in number as additional energy is required to force the atom / ion to occupy the new position)
(e). Compositional Defect
Arises due to presence of impurity atom in crystal lattice of metal during original crystallization process (responsible for functioning of semi-conductor devices)
¾ Substitutional Defect:Original parent atom from its lattice is replaced
¾ Interstitial Impurity:Small impurity occupies interstitial spaces in lattice
(f). Electronic Defect
Errors in charge distribution in solids, e.g. diodes and transistors devices, where charges diffuse in opposite regions leading to change of their concentration in that region
Substitutional Defect Interstitial Defect
(ii). Line Defects (One Dimensional Defects)
¾ Linear disturbance of atomic arrangement, which can move very easily on slip plane through crystal
¾ Occurs during recrystallization process or during slip
¾ Created along a line, which is also boundary between slipped and unslipped regions of crystals
¾ Defect is known as ‘dislocation’ and boundary is known as ‘Dislocation Line’
¾ Region near dislocation, where distortion is extremely large is called ‘Core of
Dislocation’ (very high local strain)
(a). Edge Dislocation
¾ Any extra plane of atoms within a crystal structure is edge dislocation
¾ Accompanied by zones of compression and tension and there is a net increase in energy along dislocation
¾ Displacement distance for atoms around dislocation is called ‘Burger Vector’, which is at right angle to edge dislocation
¾ Berger vector is determined by drawing a rectangle in region by connecting an equal number of atoms on opposite sides (circuit fails to complete), i.e. PP’ as shown in figure
Edge Dislocation
(b). Screw Dislocation
¾ Originate from partial slipping of a section of crystal plane
¾ Shear stresses are associated with adjacent atoms and extra energy is involved along the dislocation
¾ Successive atom planes are transformed into the Surface of Helix of Screw (plane is distorted), which accounts for its name as screw dislocation
¾ Displacement vector is parallel to the line defect
SCREW DISLOCATION
Comparison
EdgeDislocation ScrewDislocation
Arise due to introduction or elimination of an extra row of atoms
Arise due to partial slipping of section of crysta where planes of atoms are transformed into sur helix of screw
Tensile, compressive or shear stress field may be Only shear stress field is present present
Lattice disturbance extends along an edge inside Lattice disturbance extends into two separate crystal at right angles to each other
Burger’s vector is always perpendicular to dislocation line
Burger’s vector is parallel to dislocation line
Dislocations can climb and glide Dislocation can only glide
Force required is less as compared to that for screw dislocation
Force required is more as compared to that o dislocation
Edge Dislocation Screw Dislocation
Geometry of Dislocation
Edge Dislocation Screw
Burger’s Vector
Edge Dislocation Screw Dislocation
Formation of Step on Crystal Surface
(iii). Surface / Plane Defects (Two Dimensional Defects)
¾ Two-dimensional regions in crystal and arise from change in stacking of atomic planes on or across boundary
(a). External Defects
¾ Defects or imperfections represented by a boundary
¾ External surface of material itself is an imperfection because atomic bonds do not extend beyond it
¾ Surface atoms do not have neighboring atoms on one side (as compared to atoms inside the material) and thus, have high energy (in the order of 1 J/m2)
(b). Internal Defects
Grain Boundary Defect
¾ Imperfections, which separate crystals or grains of different orientation in polycrystalline aggregation during nucleation or crystallization
¾ Individual crystals with different orientation are called as ‘Grains’, and boundary separating grains are called as ‘Interface / Interface Boundary’
Example: copper metal
¾ Atoms within a grain are arranged with one orientation and pattern, which does not aligns with orientation of atoms in neighboring grains
¾ Misalignment between adjacent grains may be of various degrees (small or high angle grain boundaries)
¾ Always a transition zones between two neighboring grains
¾ Leads to less efficient packing of atoms at boundary and thus, atoms at boundary have higher energy as compared to those at inside of grain boundaries
Grain Boundary Defect
Tilt Boundary Defect
¾ Series of aligned dislocations, which tend to anchor (fasten) dislocation movements normally contributing to plastic deformation
¾ Associated with little energy
¾ Orientation difference between two neighboring grains is less than 10 0
, thus, it may be called as small / low angle grain boundary
Tilt Boundary Defect
Twin Boundary Defect
¾ Special type of grain boundary across which, there is specific mirror lattice of symmetry, i.e. atoms on one side of boundary are located in mirror-image positions of atoms on other side
¾ Region of material between these boundaries is called as ‘Twin’, which results due to basic twinning
Stacking Fault
¾ Arise due to stacking of one atomic plane out of sequence on another, while lattice on either side of fault is perfect, i.e. one or more than one atomic plane may be missing from usual conventional style of stacking
(iv). Volume Defects (Three Dimensional Defects)
¾ Bulk defects, which includes pores, cracks, foreign inclusions or other phases
Slip by Dislocation Motion
¾ Slip is plastic deformation process produced by dislocation motion (Note:
Dislocations Can Move)
¾ Dislocation motion is analogous to the mode of locomotion employed by caterpillar
¾ Caterpillar forms a hump near its posterior (later) end by pulling in its pair of legs unit leg distance and then this hump is propelled forward by repeating lifting and shifting of leg pairs
¾ When a hump moves forward, entire caterpillar moves forward by leg separation distance corresponding to extra half plane of atoms in its dislocation model of plastic deformation
Analogy between Caterpillar & Dislocation
Concept of Elastic & Plastic Deformation
Introduction:
¾ Change in dimensions of material under action of applied forces
¾ Caused by mechanical action or by various physical and physio-chemical processes
¾ Deformed components are superior to cast components in performance
¾ Types: Elastic & Plastic deformations
Classification of Deformation
Viscoelasticity
Viscoelasticity
Elastic Deformation
¾ Disappears, when load is removed & takes place before plastic deformation
¾ Strain is proportional to stress (Hooke’sLaw)
¾ Ratio of stress to strain is Young’sModulusofElasticity (E), which is a material characteristic (magnitude depends upon force of attraction between atoms of metal)
¾ Shear stress produces shear strains and ratio of shear stress to shear strain is Shear
Modulus of Rigidity (G)
¾ Ratio of volumetric stress to volumetric stain is Bulk Modulus of Elasticity (K)
¾ Perfect elastic material is one which regains back its original shape and size completely, after deforming force is removed
¾ During elastic deformation, material stores energy (strain or elastic energy), which is recovered, when load is removed
¾ Elastic strain energy is area under stress-strain curve (up to elastic limit)
¾ Materials subjected to tension shrink laterally & those subjected to compression, bulge
¾ Ratio of lateral and axial strains is called the Poisson's ratio (
ν), which is a dimensionless quantity (sign shows that lateral strain is in opposite sense to longitudinal strain)
¾ Theoretical value is 0.25 & maximum value is 0.50 (typical value lies in between 0.24 to 0.30
Plastic Deformation
¾ Permanent deformation, which persists even when deforming load is removed
(function of stress, temperature & rate of straining)
¾ Caused by loads exceeding elastic limit & occurs after elastic deformation
¾ Non-linear relation between stress and strain (nature varies with material & deformation condition)
¾ Exhibit yield point phenomenon (yield stress)
¾ Continued plastic deformation leads to fracture (instantaneous fracture for brittle material & necking followed by fracture for ductile material)
Yield Point Phenomenon
¾ Yielding starts at 1 st
higher point known as UpperYieldPointand 2 nd
lower point is known as LowerYieldPoint
¾ Stress required to deform metal after yield point is always higher due to strain hardening, which causes curve to gradually rise upwards uptill ultimate tensile point
(corresponding stress known as Ultimate Tensile Strength). After this specimen fails by fracture
Stress-Strain curve for Mild Steel
True & Engineering Stress-Strain
Strain Hardening
¾ Increase in yield stress of material when loaded subsequently in same direction again and again below recrystallization temperature
¾ When material is loaded in any direction (say tensile direction), it experiences linear elastic deformation till elastic limit. If load is removed, material comes back to its original shape and size and curve will retrace back loading path
¾ If material is further loaded (beyond yield stress ‘
σ
0
’), slight plastic deformation occurs leading to small permanent deformation. Now, if load is removed, material will retail this small plastic / permanent deformation and curve will not retrace original path, but will follow path parallel to original loading path
Strain Hardening
¾ If same material is loaded in same (tensile) direction again, it will start yielding at new yield stress ‘
σ
0
/
’, which will be higher than initial yield stress of material ‘
σ
0
’.
¾ This is because material becomes harder during plastic deformation by storing strain energy (some % of total deformation energy)
¾ Reduces ductility and plasticity of material
¾ At micro level, dislocation piles up during plastic deformation at slip planes, which interact with each other and create barriers to further motion / movement of dislocations through crystal lattice
BauschingerEffect / Elastic Hysteresis
¾ Decrease in yield stress of material when loaded initially in one direction (tensile) and then subsequently in opposite direction (compressive) below recrystallization temperature
¾ When a material is loaded in any direction (say tensile direction), it experiences linear elastic deformation till elastic limit. If it is further loaded (beyond yield stress ‘
σ
0
’), slight plastic deformation will occur leading to small permanent deformation
¾ Now, even if load is removed, material will retail this small plastic / permanent deformation and curve will not retrace original path, but will follow path parallel to original loading path
Bauschinger Effect
¾ Further, loaded in opposite direction (compressive), it will start yielding at new yield stress ‘
σ
0
/
’, which will be very less than initial yield stress of material ‘
σ
0
’.
¾ This is because residual tensile stress stored in material during tensile loading need to be removed / compensated before elastic deformation in reversal (compressive) direction starts
¾ At micro level, dislocations piles up during tensile loading along at slip planes, which can be easily moved in opposite direction (compressive loading) by residual stresses
Anelasticity:
Time‐dependent, recoverable low strain with linear behavior and relatively low damping
Viscoelasticity:
Time‐dependent, recoverable higher strains with nonlinear behavior and higher damping
Viscoplasticity:
Time‐dependent, non‐recoverable strain with nonlinear behavior and higher damping
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