PDF Data Sheet
Analog Devices Welcomes
Hittite Microwave Corporation
NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
www.analog.com
www.hittite.com
THIS PAGE INTENTIONALLY LEFT BLANK
HMC-ALH508
v02.0209
Amplifiers - low noise - Chip
1
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
Typical Applications
Features
This HMC-ALH508 is ideal for:
Noise Figure: <5 dB
• Short Haul / High Capacity Links
P1dB: +7 dBm
• Wireless LANs
Gain: 13 dB
• Automotive Radar
Supply Voltage: +2.4V
• Military & Space
50 Ohm Matched Input/Output
• E-Band Communication Systems
Die Size: 3.2 x 1.6 x 0.1 mm
Functional Diagram
General Description
The HMC-ALH508 is a three stage GaAs HEMT MMIC
Low Noise Amplifier (LNA) which operates between
71 and 86 GHz. The HMC-ALH508 features 13 dB
of small signal gain, 4.5 dB of noise figure and an
output power of +7 dBm at 1dB compression from
two supply voltages at 2.1V and 2.4V respectively.
All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated for reliable operation. This versatile LNA is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wire bonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment
and contacted with RF probes.
Electrical Specifications [1], TA = +25° C
Vdd1=Vdd2 = 2.1V, Vdd3=2.4V, Idd1+Idd2+Idd3 = 30 mA [2]
Parameter
Min.
Frequency Range
Gain
Typ.
71 - 86
Units
GHz
13
dB
4.5
dB
Input Return Loss
8
dB
Noise Figure
11
Max.
Output Return Loss
10
dB
Output Power for 1 dB Compression (P1dB)
7
dBm
Total Supply Current (Idd1+Idd2+Idd3)
30
mA
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ -0.5V )to achieve Iddtotal = 30 mA
1-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-ALH508
v02.0209
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
18
8
16
7
NOISE FIGURE (dB)
14
GAIN (dB)
12
10
8
6
4
6
5
4
3
2
1
2
0
0
70
72
74
76
78
80
82
84
86
88
90
74
76
78
80
82
84
86
88
90
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
0
0
-2
-2
-4
-4
RETURN LOSS (dB)
RETURN LOSS (dB)
1
Noise Figure vs. Frequency
-6
-8
-10
-12
-14
-6
-8
-10
-12
-14
-16
-16
-18
-18
-20
Amplifiers - low noise - Chip
Linear Gain vs. Frequency
-20
70
72
74
76
78
80
82
FREQUENCY (GHz)
84
86
88
90
70
72
74
76
78
80
82
84
86
88
90
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1-2
HMC-ALH508
v02.0209
Amplifiers - low noise - Chip
1
Absolute Maximum Ratings
Drain Bias Voltage
+3 Vdc
Gate Bias Voltage
-1 to +0.3 Vdc
RF Input Power
-5 dBm
Thermal Resistance
(channel to die bottom)
195.6 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
1-3
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-ALH508
v02.0209
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
Pad Number
Function
Description
1
RFIN
This pad is AC coupled
and matched to 50 Ohms.
2-4
Vdd1, Vdd2, Vdd3
Power Supply Voltage for the amplifier. See assembly for
required external components.
5
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
6-8
Vgg1, Vgg2, Vgg3
Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required
external components.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Amplifiers - low noise - Chip
1
Pad Descriptions
1-4
HMC-ALH508
v02.0209
Assembly Diagram
Amplifiers - low noise - Chip
1
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
1-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-ALH508
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip has fragile air
bridges and should not be touched with vacuum collet, tweezers, or fingers.
0.150mm (0.005”) Thick
Moly Tab
Amplifiers - low noise - Chip
v02.0209
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1-6
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement