RJE0609JPD Datasheet

RJE0609JPD Datasheet
Preliminary Datasheet
RJE0609JPD
Silicon P Channel MOS FET Series
Power Switching
REJ03G1908-0100
Rev.1.00
Apr 01, 2010
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features






Logic level operation (–6 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Low on-resistance 100 m Max (VGS = –10 V)
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
G
1
2
3
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
1. Gate
2. Drain
3. Source
4. Drain
Current
Limitation
Circuit
Gate
Shut-down
Circuit
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Gate to source voltage
VGSS
Drain current
ID Note3
Body-drain diode reverse drain current
IDR
Avalanche current
IAP Note 2
Avalanche energy
EAR Note 2
Channel dissipation
Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg  50 
3. It provides by the current limitation lower bound value.
REJ03G1908-0100 Rev.1.00
Apr 01, 2010
Ratings
–60
–16
2.5
–4
–4
–4
68
30
150
–55 to +150
Unit
V
V
V
A
A
A
mJ
W
C
C
Page 1 of 6
RJE0609JPD
Preliminary
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
Input current
(Gate shut down)
IIH(sd)2
Tsd
Shut down temperature
Gate operation voltage
Vop
Drain current
(Current limitation value)
ID limt
Min
–3.5
—
—
—
—
—
—
—
Typ
—
—
—
—
—
–0.8
–0.35
175
Max
—
–1.2
–100
–50
–1
—
—
—
Unit
V
V
A
A
A
mA
mA
C
Test Conditions
–3.5
–4
—
—
–12
—
V
A
Min
—
—
–4
–60
Typ
—
—
—
—
Max
–4
–10
—
—
Unit
A
mA
A
V
Test Conditions
VGS = –3.5 V, VDS = –10 V
VGS = –1.2 V, VDS = –10 V
VGS = –12 V, VDS = –10 V Note 5
ID = –10 mA, VGS = 0
–16
2.5
—
—
—
—
—
—
—
–2.2
2
—
—
—
—
—
—
—
—
–0.8
–0.35
—
—
4.3
102
79
—
—
–100
–50
–1
100
—
—
–10
–3.4
—
170
100
V
V
A
A
A
A
mA
mA
A
V
S
m
m
IG = –800 A, VDS = 0
IG = 100 A, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VGS = –1.2 V, VDS = 0
VGS = 2.4 V, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VDS = –60 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID = –2 A, VDS = –10 V Note 5
ID = –2 A, VGS = –6 V Note 5
ID = –2 A, VGS = –10 V Note 5
290
2.97
2.58
1.55
1.05
0.84
—
—
—
—
—
—
pF
s
s
s
s
V
VDS = –10 V, VGS = 0, f = 1MHz
VGS = –10 V, ID= –2 A,
RL = 15 
IF = –4 A, VGS = 0
diF/dt = 50 A/s
VGS = –6 V, VDD = –16 V
Vi = –8 V, VDS = 0
Vi = –3.5 V, VDS = 0
Vi = –1.2 V, VDS = 0
Vi = –8 V, VDS = 0
Vi = –3.5 V, VDS = 0
Channel temperature
(dv/dt VGS  500 V/ms)
VGS = –12 V, VDS = –10 V Note 4
Notes; 4. Pulse test
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
ID1
ID2
ID3
Drain to source breakdown
voltage
V(BR)DSS
Gate to source breakdown
voltage
V(BR)GSS
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS
VGS(off)
|yfs|
RDS(on)
RDS(on)
Coss
td(on)
tr
td(off)
tf
Body-drain diode forward
voltage
VDF
—
—
—
—
—
—
Body-drain diode reverse
recovery time
trr
—
81
—
ns
tos1
—
5.7
—
ms
Over load shut down
Note 6
operation time
IF = –4 A, VGS = 0
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
REJ03G1908-0100 Rev.1.00
Apr 01, 2010
Page 2 of 6
RJE0609JPD
Preliminary
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
−100
80
40
20
50
100
150
PW = 10 ms
−1
DC Operation
(Tc = 25°C)
Operation
in this area
is limited RDS(on)
−0.1
−0.01
0
0
Thermal shut down operation area
−10
s
m
Drain Current ID (A)
60
1
Channel Dissipation Pch (W)
Ta = 25°C
200
Typical Output Characteristics
Drain Current ID (A)
−4 V
0
−2
−4
−6
−8
−3
−2
150°C
25°C
−1
Tc = −40°C
VGS = 0 V
0
−10
0
−2
−4
−6
−8
−10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source On State Resistance
vs. Drain Current
−2000
Pulse Test
−1600
−1200
−800
−1 A
−400
ID = −2 A
−0.5 A
0
0
−2
−4
−6
−8
−10
Gate to Source Voltage VGS (V)
REJ03G1908-0100 Rev.1.00
Apr 01, 2010
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Drain Current ID (A)
−5.5 V
−5 V
−4.5 V
−100
VDS = −10 V
Pulse Test
Pulse Test
−1
0
Drain to Source Saturation Voltage
VDS(on) (mV)
−4
−7 V
−6 V
−2
−10
Typical Transfer Characteristics
−10 V
−3
−1
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
−4
−0.1
1000
Pulse Test
−6 V
100
VGS = −10 V
10
1
−0.1
−1
−10
Drain Current ID (A)
Page 3 of 6
Preliminary
Static Drain to Source On State Resistance
vs. Temperature
Pulse Test
ID = −0.5 A
−1 A
−2 A
150
−6 V
100
ID = −0.5 A
−1 A
−2 A
VGS = −10 V
50
−50 −25
1000
0
25
50
75 100 125 150
Forward Transfer Admittance |yfs| (S)
200
Forward Transfer Admittance vs.
Drain Current
VDS = −10 V
Pulse Test
10
Tc = −40°C
1
150°C
0.1
−0.1
−1
25°C
−10
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Switching Characteristics
10
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
100
10
−0.1
−0.3
td(on)
tr
td(off)
1
tf
VGS = −10 V, VDD = −30 V
PW = 300 μs, duty ≤ 1 %
0.1
−0.1
−1
−1
−10
Reverse Drain Current IDR (A)
Drain Current ID (A)
Reverse Drain Current vs.
Source to Drain Voltage
Typical Capacitance vs.
Drain to Source Voltage
−5
1000
−4
−3
−5 V
VGS = 0 V, 5 V, 10 V
−2
−1
−10 V
0
−0.4
Pulse Test
−0.8
−1.2
−1.6
−2.0
Source to Drain Voltage VSD (V)
REJ03G1908-0100 Rev.1.00
Apr 01, 2010
Capacitance C (pF)
Reverse Drain Current IDR (A)
100
Case Temperature Tc (°C)
Switching Time t (μs)
Reverse Recovery Time trr (ns)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
RJE0609JPD
Coss
100
VGS = 0
f = 1 MHz
10
0
−10
−20
−30
−40
−50
−60
Drain to Source Voltage VDS (V)
Page 4 of 6
RJE0609JPD
Preliminary
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
Gate to Source Voltage VGS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
−16
−14
−12
−10
VDD = −16 V
−8
−6
−4
−2
0
1
100
10
200
180
160
140
ID = −1 A
dv / dt
VGS ≥ 500 V/ ms
120
100
−2
0
Shutdown Time of Load-Short Test Pw (ms)
−4
−6
−8
−10
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
θch - c(t) = γs (t) • θch - c
θch - c = 4.17°C/W, Tc = 25°C
0.1
0.05
0.02
PDM
D=
lse
.01
0
ot
pu
PW
h
1s
0.01
10 μ
PW
T
T
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Waveform
Vin
10%
D.U.T.
RL
Vin
–10 V
50 Ω
REJ03G1908-0100 Rev.1.00
Apr 01, 2010
90%
VDD
= –30 V
90%
90%
Vout
10%
td(on)
tr
10%
td(off)
tf
Page 5 of 6
RJE0609JPD
Preliminary
Package Dimensions
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28g
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
6.5 ± 0.3
5.6 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Package Name
DPAK(S)
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
Ordering Information
Part No.
RJE0609JPD-00-J3
REJ03G1908-0100 Rev.1.00
Apr 01, 2010
Quantity
3000 pcs
Shipping Container
Taping (Sinistrorse)
Page 6 of 6
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