TRF1123

TRF1123
TRF1123
www.ti.com
SLWS167B – APRIL 2005 – REVISED SEPTEMBER 2006
2.1-GHz to 2.7-GHz 1-W Power Amplifier
FEATURES
•
•
•
•
•
•
VPOS
1.5 W P-1 dBm Linear, 30-dB Gain
Transmitter
Operates Over the MMDS, MDS, and WCS
Bands (2.1 GHz to 2.7 GHz)
Two TTL Controlled, 1-bit, 16-dB Gain Steps
Superior Linearity Over the Entire Gain
Range
PACNT Signal Enables and Disables PA
Internally Matched 50-Ω Input and Output
VDD
VNEG
Power
Supply
Power Amp /
Attenuator
PACNT
LP
Driver
Amplifier
Pre−Amp
RFI
RFO
DETN
DETP
PAGAIN1
PAGAIN0
DESCRIPTION
The TRF1123 is a highly integrated linear transmitter power amplifier MMIC. The chip has two 16-dB gain steps
that provide a total of 32-dB gain control via 1-bit TTL control signals. The chip also integrates a TTL mute
function that turns off the amplifiers for power critical or TDD applications. A temperature compensated detector
is included for output power monitor or ALC applications. The chip has a typical P1dB of 31.5 dBm and a third
order intercept of 52 dBm.
The TRF1123 is designed to function as a part of Texas Instruments complete 2.5-GHz chip set. The TRF1123
is used as the output power amplifier or a driver amplifier for higher power applications. The linear nature of the
transmitter makes it ideal for complex modulations schemes such as high order QAM or OFDM.
KEY SPECIFICATIONS
•
•
•
•
•
•
OP1dB = 31.5 dBm, Typical
Output IP3 = 52 dBm, Typical
Gain = 30 dB, Typical
Gain Flatness Over Transmit Band ±2.5 dB
Frequency Range: 2.1 GHz to 2.7 GHz
±0.5-dB Detected Output voltage vs Temperature
BLOCK DIAGRAM
The detailed block diagram and the pin-out of the ASIC are shown in Figure 1.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2006, Texas Instruments Incorporated
TRF1123
www.ti.com
SLWS167B – APRIL 2005 – REVISED SEPTEMBER 2006
LP
PACNT
VADJ3
VADJ2
VADJ1
VPOS
VNEG
KEY SPECIFICATIONS (continued)
VDD1
VDD2
Power
Supply
VDD3A
VDD3B
Switched Attn
Power Amp /
Attenuator
Switched Attn Pre−Amp
Driver Amp
RFI
RFO
DETN
PAGAIN0
PAGAIN1
DETP
Figure 1. Detailed Block Diagram of TRF1123
ELECTROSTATIC DISCHARGE NOTE
The TRF1223 contain Class 1 devices. The following Electrostatic Discharge (ESD) precautions are
recommended:
• Protective outer garments
• Handling in ESD safeguarded work area
• Transporting in ESD shielded containers
• Frequent monitoring and testing all ESD protection equipment
• Treating the TRF1223 as extremely sensitive to ESD
PINOUT TABLE
Table 1. Pinout of TRF1123
2
PIN #
PIN NAME
I/O
TYPE
DESCRIPTION
1
GND
-
-
Ground
2
GND
-
-
Ground
3
GND
-
-
Ground
4
RFI
I
Analog
5
GND
-
-
6
VG1
I/O
Analog
7
GND
-
-
RF input to power amplifier, dc blocked internally.
Ground
No connection required for normal operation. May be used to adjust FET1 bias. DO
NOT GROUND THIS PIN.
Ground
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SLWS167B – APRIL 2005 – REVISED SEPTEMBER 2006
KEY SPECIFICATIONS (continued)
Table 1. Pinout of TRF1123 (continued)
(1)
PIN #
PIN NAME
I/O
TYPE
DESCRIPTION
8
VNEG
I
Power
Negative power supply –5 V. Used to set gate voltage. This voltage must be sequenced
with VDD. See (1).
9
VPOS
I
Power
Positive power supply. Bias is +V. Used to set gate bias and logic input level.
10
PAGAIN0
I
Digital
First 16-dB attenuator gain control. Logic high is high gain; logic low is low gain.
11
VG2
I/O
Analog
No connection required for normal operation. May be used to adjust FET2 bias. DO
NOT GROUND THIS PIN.
12
PAGAIN1
I
Digital
Second 16-dB gain control. Logic high is high gain, Logic low is low gain.
13
VG3
I/O
14
LP
I
Digital
Low Power Mode: Active high. Low power mode is lower DC and Pout mode.
15
PACNT
I
Digital
Power amplifier enable, high is PA on, logic low is PA off (low current)
16
GND
-
-
17
VDD3B
I
Power
18
GND
-
-
Ground
19
GND
-
-
Ground
20
GND
-
-
Ground
21
RFO
O
Analog
22
GND
-
-
Ground
23
GND
-
-
Ground
24
VDD3A
I
Power
No connection required for normal operation. May be used to adjust FET3 bias. DO
NOT GROUND THIS PIN.
Ground
Stage 3 dc drain supply power. This pin is internally dc connected to pin 24 (VDD3A).
Bias must be provided to both pins for optimal performance. The total dc current through
these two pins is typically 70% of IDD.
RF output dc block is provided
Stage 3 dc drain supply power. This pin is internally dc connected to pin 17 (VDD3B).
Bias must be provided to both pins for optimal performance. The total dc current through
these two pins is typically 70% of IDD.
25
GND
-
-
26
DETP
O
Analog
Ground
Detector output, positive. Voltage will be 0.5 V with/without RF output
27
DETN
O
Analog
Detector output, negative. Voltage is 0.5 V with no RF and decreases with increasing
RF output power.
28
VDD2
I
Power
Stage 2 dc drain supply power. The dc current through this pin is typically 25% of IDD.
29
GND
-
-
Ground
-
Ground
30
GND
31
VDD1
-
32
GND
-
-
Ground
Back
-
-
Back of package has metal base that must be grounded for thermal and RF
performance.
Stage 1 dc drain supply power. The dc current through this pin is typically 5% of IDD.
Proper Sequencing: In order to avoid permanent damage to the power amplifier, the supply voltages must be sequenced. The proper
power up sequence is VNEG, then VPOS, and then VDD. The proper power down sequence is remove VDD, then VPOS, and then
VNEG.
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SLWS167B – APRIL 2005 – REVISED SEPTEMBER 2006
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
MIN
VDD
VPOS
DC supply voltage
VNEG
IDD
Current consumption
PIN
RF input power
TJ
Junction temperature
PD
Power dissipation
Digital input pins
0
+8
0
5.5
-5.5
0
-0.3
Θjc
Thermal resistance junction to
case (1)
Tstg
Storage temperature
Top
Operating temperature
Maximum case temperature derate for
PCB thermal resistance
Lead temperature
40 sec maximum
(1)
MAX
UNIT
V
700
Ma
20
dBm
175
°C
5.5
W
5.5
20
°C/W
-40
+105
°C
-40
+85
°C
220
°C
Thermal resistance is junction to case assuming thermal pad with 25 thermal vias under package metal base. See recommended layout
Figure 11 and application note RA1005 for more detail.
DC CHARACTERISTICS
PARAMETER
CONDITIONS
MIN
TYP
MAX
7
7.35
UNIT
V
600
700
mA
VDD
VDD supply voltage
IDD
VDD supply current
VNEG
Negative supply voltage
INEG
Negative supply current
VPOS
Positive supply digital voltage
IPOS
Positive supply digital current
VIH
Input high voltage
VIL
Input low voltage
0.8
V
IIH
Input high current
300
µA
IIL
Input low current
-50
µA
PACNTRL = High, VDD = 7 V, 25°C
-5.25
4.75
-5
-4.75
15
25
5
5.25
25
50
mA
5
V
2.5
V
mA
V
POWER AMPLIFIER CHARACTERISTICS
VDD = 7 V, IDD = 600 mA, VPOS = 5 V, VNEG = -5 V, PAGAIN0 = 1, PAGAIN1 = 1, PACNT = 1, T = 25°C, unless otherwise
stated
PARAMETER
MIN
TYP
F
Frequency
G
Gain
GHG
Gain flatness full band
GNB
Gain flatness / 2 MHz
OP-1dB
Output power at 1-dB compression
30
31.5
OIP3
Output third order intercept point
40
52
Vdet
tSTEP
4
TEST CONDITIONS
2100
26
F = 2100 MHz to 2700 MHz
30
3
MAX
UNIT
2700
MHz
36
5
dB
0.2
dBm
Gain step size 1st step
PAGAIN0 = Low, PAGAIN1 = High
15
16
17
Gain step size 2nd step
PAGAIN0 = Low, PAGAIN1 = Low
30
32
34
Detector voltage output, differential
(DETP-DETN)
At Pout = 27 ±0.75 dBm, F = 2100
to 2700 MHz at 25°C
Detector accuracy vs temperature
F=2500 MHz, -30°C to 75°C
Gain step response time
150
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mV
±0.75
1
dB
dB
5
µS
TRF1123
www.ti.com
SLWS167B – APRIL 2005 – REVISED SEPTEMBER 2006
POWER AMPLIFIER CHARACTERISTICS (continued)
VDD = 7 V, IDD = 600 mA, VPOS = 5 V, VNEG = -5 V, PAGAIN0 = 1, PAGAIN1 = 1, PACNT = 1, T = 25°C, unless otherwise
stated
PARAMETER
TEST CONDITIONS
MIN
PON/OFF
On to off power ratio
Max Gain to gain with PACNT =
Low
NFHG
Noise figure, max gain
PAGAIN0 = High, PAGAIN1 = High
NFLG
Noise figure min gain
PAGAIN = Low, PAGAIN1 = Low
S12
Reverse isolation
S11
Input return loss
Z = 50 Ω
S22
Output return loss
Z = 50 Ω
TYP
MAX
UNIT
35
6
7
20
dB
30
-10
-12
-8
TYPICAL PERFORMANCE
35
TA = 55C
36
VDD = 5 V,
TA = 55C
7 V, 32 dB Step
30
5 V, 32 dB Step
32
VDD = 7 V
Gain Step − dB
Gain − dB
25
20
15
28
24
20
10
7 V, 16 dB Step
5
16
0
12
5 V, 16 dB Step
2
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
f − Frequency − GHz
3
Figure 2. Gain vs Frequency
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2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
f − Frequency − GHz
3
Figure 3. Gain Control
5
TRF1123
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SLWS167B – APRIL 2005 – REVISED SEPTEMBER 2006
TYPICAL PERFORMANCE (continued)
60
22 dBm
IP3, VDD = 7 V
50
Notched Depth − dBc
Output P-1dB and IP3 − dBm
55
−30
IP3, VDD = 5 V
45
40
35
P-1dB, VDD = 7 V
−40
21 dBm
20 dBm
−50
19 dBm
30
P-1dB, VDD = 5 V
25
20
PA Notched Test,
VDD = 5 V,
1000 Carriers @ 2 kHz Spacing
−60
2000
2.150 2.250 2.350 2.450 2.550 2.650 2.686
f − Frequency − GHz
PA Notched Test,
VDD = 7 V,
1000 Carriers @ 2 kHz Spacing
Notched Depth − dBc
Notched Depth − dBc
2800
−30
PA Notched Test,
VDD = 6 V,
1000 Carriers @ 2 kHz Spacing
−40
22 dBm
21 dBm
20 dBm
−40
22 dBm
21 dBm
−50
19 dBm
19 dBm
2200
2400
2600
f − Frequency − MHz
2800
−60
2000
Figure 6. PA Notched Test (VDD = 6 V)
6
2600
Figure 5. PA Notched Test (VDD = 5 V)
−30
−60
2000
2400
f − Frequency − MHz
Figure 4. Output P-1 dB and IP3
−50
2200
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2200
20 dBm
2400
2600
f − Frequency − MHz
Figure 7. PA Notched Test (VDD = 7 V)
2800
TRF1123
www.ti.com
SLWS167B – APRIL 2005 – REVISED SEPTEMBER 2006
TYPICAL PERFORMANCE (continued)
Figure 8. Pulse Droop - RF Output With PACNT Pulsed
and 20% Duty Cycle
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TRF1123
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SLWS167B – APRIL 2005 – REVISED SEPTEMBER 2006
APPLICATION INFORMATION
Figure 9. Package Drawing
A typical application schematic is shown in Figure 10 and a mechanical drawing of the package outline (LPCC
Quad 5 mm x 5 mm, 32-pin) is shown in Figure 9.
The recommended PCB layout mask is shown in Figure 11, along with recommendations on the board material
Table 2 and construction Figure 12.
VDD
100 pF
100 pF
27
26
GND
25
GND
28
DETP
29
DETN
GND
30
VDD2
BASE
31
VDD1
GND
32
1
Vdet
0.1 mF
0.1 mF
GND
1 mF
10 mF*
VDD3A
24
100 pF
2
3
RFI
4
23
GND
0.1 mF
GND
GND
GND
22
RFI
RFO
21
GND
GND
20
VG1
GND
19
GND
GND
18
VDD3B
17
9
10
11
12
13
14
15
100 pF
GND
PACNT
100 pF
RES
0.1 mF
VNEG
VPOS
1 mF
8
VG3
VNEG
PAGAIN1
7
VG2
6
PAGAIN0
RF_OUT
5
0.1 mF
16
VPOS
1 mF
0.1 mF
PACNT
100 pF
PAGAIN1
0.1 mF
PAGAIN0
*10 mF May Need to be 100 mF For High
Speed Pulse Applications
Place 100 pF Capacitors Close to Package
Pins and Minimize Parstic Inductance
Figure 10. Recommended TRF1123 Application Schematic
Table 2. PCB Recommendations
8
Board Material
FR4
Board Material Core Thickness
10 mil
Copper Thickness (starting)
1 oz
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SLWS167B – APRIL 2005 – REVISED SEPTEMBER 2006
Table 2. PCB Recommendations (continued)
Prepreg Thickness
8 mil
Recommended Number of Layers
4
Via Plating Thickness
0.5 oz
Final Plate
White immersion tin
Final Board Thickness
33-37 mil
3.80
0.20 TYP
0.50 TYP
PIN 1
0.75 TYP
3.80
3.50
0.75 TYP
DIA 0.38
TYP
0.60 TYP
0.25 TYP
3.50
SOLDER MASK: NO SOLDERMASK UNDER CHIP, ON LEAD PADS
OR ON GROUND CONNECTIONS.
25 VIA HOLES, EACH 0.38 mm.
DIMENSIONS in mm
Figure 11. Recommended Pad Layout
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TRF1123
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Dia 15 Mil
1 oz Copper + 1/2 oz Copper Plated
Upper and Lower Surfaces
10 Mil Core FR4
1 oz Copper
8 Mil
Prepreg
35 Mil
1 oz Copper
10 Mil Core FR4
DuPont CB 100 Conductive Via Plug
1/2 oz Copper Plated
Figure 12. PCB Via Cross Section
10
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PACKAGE OPTION ADDENDUM
www.ti.com
5-Feb-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TRF1123IRTMR
ACTIVE
QFN
RTM
32
3000 Green (RoHS &
no Sb/Br)
CU SN
Level-3-260C-168 HR
TRF1123IRTMRG3
ACTIVE
QFN
RTM
32
3000 Green (RoHS &
no Sb/Br)
CU SN
Level-3-260C-168 HR
TRF1123IRTMT
ACTIVE
QFN
RTM
32
250
Green (RoHS &
no Sb/Br)
CU SN
Level-3-260C-168 HR
TRF1123IRTMTG3
ACTIVE
QFN
RTM
32
250
Green (RoHS &
no Sb/Br)
CU SN
Level-3-260C-168 HR
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Mar-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TRF1123IRTMR
QFN
RTM
32
3000
330.0
12.4
5.3
5.3
1.5
8.0
12.0
Q2
TRF1123IRTMT
QFN
RTM
32
250
330.0
12.4
5.3
5.3
1.5
8.0
12.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Mar-2008
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TRF1123IRTMR
QFN
RTM
32
3000
340.5
333.0
20.6
TRF1123IRTMT
QFN
RTM
32
250
340.5
333.0
20.6
Pack Materials-Page 2
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