NXP MMG3014NT1 40-4000 MHz, 19.5 dB, 25 dBm InGaP HBT 数据表

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

Broadband High Linearity Amplifier

The MMG3014NT1 is a general purpose amplifier that is input and output internally prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 4000 MHz such as cellular, PCS,

BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.

Features

 Frequency: 40--4000 MHz

 P1dB: 25 dBm @ 900 MHz

 Small--Signal Gain: 19.5 dB @ 900 MHz

 Third Order Output Intercept Point: 40.5 dBm @ 900 MHz

 Single 5 V Supply

 Active Bias

 Cost--effective SOT--89 Surface Mount Plastic Package

 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

Document Number: MMG3014NT1

Rev. 5, 3/2016

MMG3014NT1

40--4000 MHz, 19.5 dB

25 dBm

InGaP HBT GPA

SOT--89

Table 1. Typical Performance

(1)

Characteristic

Small--Signal Gain

(S21)

Input Return Loss

(S11)

Symbol

G p

IRL

900

MHz

19.5

--25

2140

MHz

15

--12

3500

MHz

10

--8

Unit

dB dB

Output Return Loss

(S22)

Power Output @1dB

Compression

ORL

P1dB

--11

25

--13

25.8

--19

25 dB dBm

Third Order Output

Intercept Point

OIP3 40.5

40.5

40 dBm

1. V

CC

= 5 Vdc, T

A

= 25C, 50 ohm system, application circuit tuned for specified frequency.

Table 2. Maximum Ratings

Rating

Supply Voltage

Supply Current

RF Input Power

Storage Temperature Range

Junction Temperature

Symbol

V

CC

I

CC

P in

T stg

T

J

Value

6

300

25

--65 to +150

175

Unit

V mA dBm

C

C

Table 3. Thermal Characteristics

Characteristic Symbol Value

(2)

Unit

Thermal Resistance, Junction to Case

Case Temperature 81C, 5 Vdc, 135 mA, no RF applied

R

JC

27.4

C/W

2. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

 Freescale Semiconductor, Inc., 2008, 2011, 2014, 2016. All rights reserved.

RF Device Data

Freescale Semiconductor, Inc.

MMG3014NT1

1

Table 4. Electrical Characteristics

(V

CC

= 5 Vdc, 900 MHz, T

A

= 25C, 50 ohm system, in Freescale Application Circuit)

Characteristic Symbol Min Typ Max

Small--Signal Gain (S21)

Input Return Loss (S11)

Output Return Loss (S22)

Power Output @ 1dB Compression

Third Order Output Intercept Point

Noise Figure

Supply Current

Supply Voltage

G p

IRL

ORL

P1dB

OIP3

NF

I

CC

V

CC

—

—

110

—

18.5

—

—

—

40.5

5.7

135

5

19.5

--25

--11

25

—

—

160

—

—

—

—

—

Unit

dB dB dB dBm dBm dB mA

V

Table 5. Functional Pin Description

Pin

Number

1

2

RF in

Ground

Pin Function

3 RF out

/DC Supply

2

1

2 3

Figure 1. Functional Diagram

Table 6. ESD Protection Characteristics

Test Conditions/Test Methodology

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Table 7. Moisture Sensitivity Level

Test Methodology

Per JESD22--A113, IPC/JEDEC J--STD--020

Rating

1

Class

1B

A

IV

Package Peak Temperature

260

Unit

C

MMG3014NT1

2

RF Device Data

Freescale Semiconductor, Inc.

50 OHM TYPICAL CHARACTERISTICS

0

25

20

15

T

C

= --40C

25C

10

5

0

V

CC

= 5 Vdc

85C

1 2 3 f, FREQUENCY (GHz)

Figure 2. Small--Signal Gain (S21) versus

Frequency

4

23

1960 MHz

2140 MHz

2600 MHz

V

CC

= 5 Vdc

17

15

21

19

13

11

9

6

900 MHz

3500 MHz

10 14 18 22

P out

, OUTPUT POWER (dBm)

Figure 4. Small--Signal Gain versus Output

Power

26

120

100

80

60

40

20

0

0

200

180

160

140

1 2 3 4

V

CC

, COLLECTOR VOLTAGE (V)

5

Figure 6. Collector Current versus Collector

Voltage

6

--5

V

CC

= 5 Vdc

--10

0 1 2 f, FREQUENCY (GHz)

3

Figure 3. Input/Output Return Loss versus

Frequency

4

26

25

24

0.5

V

CC

= 5 Vdc

1 1.5

2 f, FREQUENCY (GHz)

2.5

3

Figure 5. P1dB versus Frequency

3.5

42

40

S11

S22

V

CC

= 5 Vdc

1 MHz Tone Spacing

38

0 1 2 f, FREQUENCY (GHz)

3

Figure 7. Third Order Output Intercept Point versus Frequency

4

RF Device Data

Freescale Semiconductor, Inc.

MMG3014NT1

3

50 OHM TYPICAL CHARACTERISTICS

42 42

40

40

--30

--40

--50 f = 900 MHz

1 MHz Tone Spacing

38

4.5

4.7

4.9

5.1

V

CC

, COLLECTOR VOLTAGE (V)

5.3

Figure 8. Third Order Output Intercept Point versus Collector Voltage

5.5

--60

--70

V

CC

= 5 Vdc f = 900 MHz

1 MHz Tone Spacing

--80

10 13 16 19

P out

, OUTPUT POWER (dBm)

22

Figure 10. Third Order Intermodulation versus

Output Power

25

10

8

6

4

2

V

CC

= 5 Vdc

0

0 1 2 f, FREQUENCY (GHz)

3

Figure 12. Noise Figure versus Frequency

4

MMG3014NT1

4

V

CC

= 5 Vdc f = 900 MHz

1 MHz Tone Spacing

38

--40 --20 0 20 40

T, TEMPERATURE (_C)

60 80

Figure 9. Third Order Output Intercept Point versus Case Temperature

100

10

5

10

4

10

3

120 125 130 135 140

T

J

, JUNCTION TEMPERATURE (C)

145

NOTE: The MTTF is calculated with V

CC

= 5 Vdc, I

CC

= 135 mA

150

Figure 11. MTTF versus Junction Temperature

--20

--30

V

CC

= 5 Vdc, f = 2140 MHz

Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth

Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF

--40

--50

--60

--70

10 13 16 19 22

P out

, OUTPUT POWER (dBm)

Figure 13. Single--Carrier W--CDMA Adjacent

Channel Power Ratio versus Output Power

25

RF Device Data

Freescale Semiconductor, Inc.

50 OHM APPLICATION CIRCUIT: 800--1000 MHz

V

SUPPLY

R1

C3 C4

RF

INPUT

Z1 Z2

C1

Z3 Z4

DUT

V

CC

Z5

L1

Z6

C2

Z7 Z8

RF

OUTPUT

C5 C6 C7

Z1, Z8

Z2, Z7

Z3

Z4

0.274 x 0.058 Microstrip

0.073 x 0.058 Microstrip

0.066 x 0.058 Microstrip

0.509 x 0.058 Microstrip

Z5

Z6

PCB

0.172 x 0.058 Microstrip

0.403 x 0.058 Microstrip

Getek Grade ML200C, 0.031,  r

= 4.1

Figure 14. 50 Ohm Test Circuit Schematic

10

0

30

20

--10

S21

S22

--20

S11

--30

V

CC

= 5 Vdc

--40

700 800 900 1000 1100 f, FREQUENCY (MHz)

Figure 15. S21, S11 and S22 versus Frequency

C5

C1

C6

R1

MMG30XX

Rev 2

L1

C4

C3

C2

C7

Figure 16. 50 Ohm Test Circuit Component Layout

Table 8. 50 Ohm Test Circuit Component Designations and Values

Part Description

C6

C7

L1

R1

C1, C2

C3

C4

C5

220 pF Chip Capacitors

0.1 F Chip Capacitor

2.2 F Chip Capacitor

0.2 pF Chip Capacitor

4.7 pF Chip Capacitor

1.8 pF Chip Capacitor

10 nH Chip Inductor

0  Chip Resistor

Part Number

C0805C221J5GAC

C0603C104J5RAC

C0805C225J4RAC

12065J0R2BS

C0603C479J5GAC

C1206C189D5GAC

HK160810NJ--T

ERJ3GEY0R00V

Manufacturer

Kemet

Kemet

Kemet

AVX

Kemet

Kemet

Taiyo Yuden

Panasonic

RF Device Data

Freescale Semiconductor, Inc.

MMG3014NT1

5

50 OHM APPLICATION CIRCUIT: 1800--2200 MHz

V

SUPPLY

R1

C3 C4

RF

INPUT

Z1

C1

Z2 Z3

DUT

V

CC

Z4

L1

Z5 Z6

C2

Z7

RF

OUTPUT

C5 C6

Z1, Z7

Z2

Z3

Z4

0.347 x 0.058 Microstrip

0.399 x 0.058 Microstrip

0.176 x 0.058 Microstrip

0.172 x 0.058 Microstrip

Z5

Z6

PCB

0.162 x 0.058 Microstrip

0.241 x 0.058 Microstrip

Getek Grade ML200C, 0.031,  r

= 4.1

Figure 17. 50 Ohm Test Circuit Schematic

20

S21

10

R1

0

S11

--10

--20

1600

V

CC

= 5 Vdc

1800 2000 2200

S22

2400 f, FREQUENCY (MHz)

Figure 18. S21, S11 and S22 versus Frequency

C1 C5

MMG30XX

Rev 2

L1

C4

C3

C2

C6

Figure 19. 50 Ohm Test Circuit Component Layout

Table 9. 50 Ohm Test Circuit Component Designations and Values

Part Description

C6

L1

R1

C1, C2

C3

C4

C5

22 pF Chip Capacitors

0.1 F Chip Capacitor

2.2 F Chip Capacitor

1.5 pF Chip Capacitor

1.1 pF Chip Capacitor

15 nH Chip Inductor

0  Chip Resistor

Part Number

C0805C220J5GAC

C0603C104J5RAC

C0805C225J4RAC

C0603C159J5RAC

C0603C119J5GAC

HK160815NJ--T

ERJ3GEY0R00V

Manufacturer

Kemet

Kemet

Kemet

Kemet

Kemet

Taiyo Yuden

Panasonic

MMG3014NT1

6

RF Device Data

Freescale Semiconductor, Inc.

50 OHM APPLICATION CIRCUIT: 2300--2700 MHz

V

SUPPLY

R1

RF

INPUT

Z1

C1

Z2 Z3

DUT

V

CC

Z4 Z5

L1

Z6

C3

C2

C4

Z7

RF

OUTPUT

C5 C6

Z1, Z7

Z2

Z3

Z4

0.347 x 0.058 Microstrip

0.488 x 0.058 Microstrip

0.087 x 0.058 Microstrip

0.136 x 0.058 Microstrip

Z5

Z6

PCB

0.036 x 0.058 Microstrip

0.403 x 0.058 Microstrip

Getek Grade ML200C, 0.031,  r

= 4.1

Figure 20. 50 Ohm Test Circuit Schematic

20

10

0

S21

--10

S11

--20

--30

2100

V

CC

= 5 Vdc

2300

S22

2500 2700 2900 f, FREQUENCY (MHz)

Figure 21. S21, S11 and S22 versus Frequency

C1

C5

R1

MMG30XX

Rev 2

L1

C4

C3

C6

C2

Figure 22. 50 Ohm Test Circuit Component Layout

Table 10. 50 Ohm Test Circuit Component Designations and Values

Part Description

C1, C2

C3

C4

C5, C6

L1

R1

22 pF Chip Capacitors

0.1 F Chip Capacitor

2.2 F Chip Capacitor

1.1 pF Chip Capacitors

15 nH Chip Inductor

0  Chip Resistor

Part Number

C0805C220J5GAC

C0603C104J5RAC

C0805C225J4RAC

C0603C119J5GAC

HK160815NJ--T

ERJ3GEY0R00V

Manufacturer

Kemet

Kemet

Kemet

Kemet

Taiyo Yuden

Panasonic

RF Device Data

Freescale Semiconductor, Inc.

MMG3014NT1

7

50 OHM APPLICATION CIRCUIT: 3400--3600 MHz

V

SUPPLY

R1

RF

INPUT

Z1

C1

Z2 Z3 Z4

DUT

V

CC

Z5 Z6

L1

Z7

C3

C2

C4

Z8

RF

OUTPUT

C5 C6 C7

Z1, Z8

Z2

Z3

Z4, Z5

0.347 x 0.058 Microstrip

0.068 x 0.058 Microstrip

0.419 x 0.058 Microstrip

0.088 x 0.058 Microstrip

Z6

Z7

PCB

0.084 x 0.058 Microstrip

0.403 x 0.058 Microstrip

Getek Grade ML200C, 0.031,  r

= 4.1

Figure 23. 50 Ohm Test Circuit Schematic

20

S21

10

0

S11

--10

S22

--20

--30

3400

V

CC

= 5 Vdc

3450 3500 3550 3600 f, FREQUENCY (MHz)

Figure 24. S21, S11 and S22 versus Frequency

C1

C5

C6

R1

MMG30XX

Rev 2

L1

C4

C3

C7

C2

Figure 25. 50 Ohm Test Circuit Component Layout

C5

C6

C7

L1

R1

C1

C2

C3

C4

Table 11. 50 Ohm Test Circuit Component Designations and Values

Part Description

3.3 pF Chip Capacitor

2.0 pF Chip Capacitor

0.1 F Chip Capacitor

2.2 F Chip Capacitor

0.6 pF Chip Capacitor

0.9 pF Chip Capacitor

0.8 pF Chip Capacitor

56 nH Chip Inductor

0  Chip Resistor

Part Number

C0805C339J5GAC

C0805C209J5GAC

C0603C104J5RAC

C0805C225J4RAC

06035J0R6BS

06035J0R9BS

06035J0R8BS

HK160856NJ--T

ERJ3GEY0R00V

Manufacturer

Kemet

Kemet

Kemet

Kemet

AVX

AVX

AVX

Taiyo Yuden

Panasonic

MMG3014NT1

8

RF Device Data

Freescale Semiconductor, Inc.

50 OHM TYPICAL CHARACTERISTICS

0.629

0.632

0.634

0.636

0.640

0.643

0.624

0.624

0.624

0.625

0.626

0.628

0.610

0.611

0.615

0.618

0.621

0.625

0.616

0.613

0.611

0.611

0.610

0.610

0.681

0.685

0.689

0.693

0.697

0.701

0.705

0.709

0.646

0.649

0.653

0.657

0.661

0.665

0.669

0.673

0.677

166.1

165.4

164.6

163.8

163.0

162.2

170.2

169.6

168.9

168.3

167.6

166.9

170.4

169.9

169.5

171.8

171.4

170.9

173.4

173.0

172.5

172.0

171.4

170.9

153.8

153.0

152.2

151.3

150.5

149.6

148.7

147.8

161.3

160.5

159.7

158.9

158.0

157.2

156.4

155.5

154.7

Table 12. Common Emitter S--Parameters

(V

CC

= 5 Vdc, T

A

= 25C, 50 Ohm System)

S

11

S

21

S

12 f

MHz

250

300

|S

11

|

0.622

0.618

 

174.6

174.0

|S

21

|

10.280

10.107

 

153.8

148.3

|S

12

|

0.0336

0.0336

1250

1300

1350

1400

1450

1500

950

1000

1050

1100

1150

1200

650

700

750

800

850

900

350

400

450

500

550

600

2000

2050

2100

2150

2200

2250

2300

2350

1550

1600

1650

1700

1750

1800

1850

1900

1950

5.545

5.393

5.257

5.117

4.988

4.864

6.629

6.422

6.227

6.044

5.866

5.700

8.363

8.064

7.734

7.403

7.073

6.838

9.933

9.760

9.586

9.300

9.009

8.716

3.864

3.783

3.707

3.633

3.562

3.494

3.426

3.363

4.742

4.630

4.517

4.414

4.312

4.215

4.123

4.033

3.947

91.7

89.9

88.2

86.5

84.8

83.2

103.7

101.5

99.4

97.3

95.4

93.5

119.2

116.2

113.3

110.9

108.4

106.0

143.1

138.3

133.8

129.8

126.0

122.4

68.4

67.0

65.5

64.1

62.7

61.3

59.8

58.4

81.7

80.1

78.6

77.1

75.6

74.2

72.7

71.3

69.8

0.0343

0.0344

0.0344

0.0346

0.0347

0.0349

0.0351

0.0352

0.0354

0.0355

0.0356

0.0357

0.0337

0.0337

0.0338

0.0338

0.0339

0.0339

0.0340

0.0340

0.0341

0.0342

0.0342

0.0343

0.0367

0.0367

0.0368

0.0369

0.0369

0.0370

0.0371

0.0371

0.0359

0.0360

0.0361

0.0362

0.0363

0.0364

0.0364

0.0365

0.0366

--5.0

--5.2

--5.5

--5.7

--6.0

--6.3

--3.8

--4.0

--4.2

--4.4

--4.5

--4.8

--6.6

--6.9

--7.2

--7.6

--7.9

--8.3

--8.7

--9.1

--2.7

--2.8

--3.0

--3.2

--3.4

--3.6

--1.8

--1.9

--2.0

--2.2

--2.3

--2.5

--0.6

--0.8

--1.0

--1.2

--1.4

--1.6

--1.7

 

0.6

0.3

--0.1

--0.4

RF Device Data

Freescale Semiconductor, Inc.

S

22

160.3

159.6

158.9

158.2

157.4

156.7

164.9

164.1

163.3

162.6

161.8

161.1

156.0

155.2

154.4

153.6

152.8

152.0

151.2

150.3

169.9

169.1

168.2

167.3

166.5

165.6

175.5

174.5

173.5

172.6

171.8

170.9

 

--171.6

--171.9

--172.5

--173.3

--174.0

--174.9

--175.8

--176.8

--177.9

--178.9

176.5

(continued)

0.552

0.554

0.556

0.557

0.559

0.560

0.543

0.544

0.545

0.547

0.549

0.550

0.562

0.563

0.564

0.564

0.565

0.565

0.565

0.564

0.538

0.538

0.539

0.540

0.540

0.541

0.526

0.533

0.536

0.536

0.537

0.537

|S

22

|

0.448

0.457

0.465

0.475

0.483

0.490

0.497

0.503

0.508

0.512

0.517

MMG3014NT1

9

50 OHM TYPICAL CHARACTERISTICS

Table 12. Common Emitter S--Parameters

(V

CC

= 5 Vdc, T

A

= 25C, 50 Ohm System) (continued)

S

11

S

21

S

12 f

MHz

2400

2450

|S

11

|

0.712

0.715

 

146.9

146.0

|S

21

|

3.299

3.240

 

57.0

55.6

|S

12

|

0.0372

0.0373

 

--9.5

--9.9

0.762

0.764

0.766

0.768

0.770

0.772

0.749

0.751

0.753

0.756

0.758

0.760

0.774

0.775

0.777

0.778

0.780

0.781

0.783

0.736

0.738

0.740

0.742

0.745

0.747

0.719

0.722

0.724

0.728

0.730

0.733

3400

3450

3500

3550

3600

3650

3100

3150

3200

3250

3300

3350

3700

3750

3800

3850

3900

3950

4000

2800

2850

2900

2950

3000

3050

2500

2550

2600

2650

2700

2750

29.8

28.6

27.3

26.1

24.9

23.7

37.6

36.3

35.0

33.7

32.4

31.1

22.6

21.5

20.4

19.2

18.1

17.1

16.0

45.8

44.4

43.0

41.7

40.3

39.0

54.1

52.7

51.3

49.9

48.5

47.1

2.422

2.392

2.361

2.331

2.302

2.273

2.627

2.590

2.555

2.521

2.487

2.455

2.246

2.218

2.192

2.167

2.142

2.118

2.091

2.872

2.828

2.784

2.743

2.703

2.664

3.181

3.124

3.071

3.017

2.968

2.920

127.1

126.1

125.1

124.2

123.2

122.3

133.1

132.1

131.1

130.1

129.1

128.1

121.3

120.4

119.5

118.6

117.6

116.7

115.8

139.2

138.2

137.2

136.2

135.2

134.2

145.0

144.1

143.1

142.2

141.2

140.2

0.0386

0.0388

0.0389

0.0390

0.0391

0.0393

0.0394

0.0395

0.0396

0.0397

0.0398

0.0399

0.0400

0.0401

0.0403

0.0404

0.0405

0.0406

0.0407

0.0373

0.0374

0.0374

0.0375

0.0376

0.0377

0.0378

0.0380

0.0381

0.0382

0.0384

0.0385

--19.0

--19.5

--20.0

--20.5

--21.0

--21.4

--15.9

--16.4

--17.0

--17.5

--18.0

--18.5

--21.8

--22.2

--22.6

--23.0

--23.4

--23.9

--24.2

--12.9

--13.4

--13.8

--14.4

--14.9

--15.4

--10.3

--10.8

--11.2

--11.6

--12.0

--12.4

0.558

0.559

0.560

0.560

0.561

0.562

0.557

0.557

0.557

0.557

0.557

0.558

|S

22

|

0.564

0.563

0.562

0.562

0.561

0.560

0.559

0.559

0.558

0.557

0.557

0.563

0.564

0.565

0.566

0.567

0.568

0.569

0.570

0.571

0.572

S

22

133.2

132.2

131.3

130.5

129.6

128.9

139.1

138.1

137.1

136.1

135.1

134.1

 

149.5

148.6

147.7

146.8

145.9

145.0

144.0

143.1

142.1

141.1

140.1

128.1

127.4

126.7

126.1

125.6

125.1

124.6

124.2

123.7

123.5

MMG3014NT1

10

RF Device Data

Freescale Semiconductor, Inc.

RF Device Data

Freescale Semiconductor, Inc.

1.90

2X

45

3.00

4.35

2X

1.25

0.85

3X

0.70

2X

1.50

Figure 26. PCB Pad Layout for SOT--89A

M3014N

AWLYWZ

Figure 27. Product Marking

MMG3014NT1

11

PACKAGE DIMENSIONS

MMG3014NT1

12

RF Device Data

Freescale Semiconductor, Inc.

RF Device Data

Freescale Semiconductor, Inc.

MMG3014NT1

13

MMG3014NT1

14

RF Device Data

Freescale Semiconductor, Inc.

PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following documents to aid your design process.

Application Notes

 AN1955: Thermal Measurement Methodology of RF Power Amplifiers

 AN3100: General Purpose Amplifier Biasing

Software

 .s2p File

Development Tools

 Printed Circuit Boards

Reference Designs

 2110--2170 MHz, 4 W, 28 V W--CDMA Smart Demo Reference Design (Devices MMG3014N, MW7IC2240N)

To Download Resources Specific to a Given Part Number:

1. Go to http://www.nxp.com/RF

2. Search by part number

3. Click part number link

4. Choose the desired resource from the drop down menu

FAILURE ANALYSIS

At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where Freescale is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local Freescale Sales Office.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0

1

Apr. 2008

Sept. 2008

 Initial Release of Data Sheet

 Updated Fig. 15, “S21, S11 and S22 versus Frequency,” to correct S11 and S22 curve label transposition error, p. 6

 Updated data in Table 12, “Common Emitter S-Parameters,” for better simulation response, pp. 9--10

2 Jan. 2011

 Corrected temperature at which ThetaJC is measured from 25C to 81C and added “no RF applied” to

Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no

RF signal applied, p. 1

 Removed I

CC bias callout from applicable graphs as bias is not a controlled value, pp. 4--9

 Removed I

CC bias callout from Table 12, Common Emitter S--Parameters heading as bias is not a controlled value, pp. 9--10

 Added .s2p file and Printed Circuit Boards availability to Software and Tools, p. 16

 Added Reference Design availability to Development Tools, p. 16

3 Oct. 2011

 Table 1, Maximum Ratings, increased Input Power from 15 dBm to 25 dBm to reflect the true capability of the device, p. 1

 Changed ESD Human Body Model rating from Class 1C to Class 1B to reflect recent ESD test results of the device, p. 2

 Corrected part number for the C7 capacitor in Table 8, 50 Ohm Test Circuit Component Designations and

Values, from C0603C189J5GAC to C1206C189D5GAC, p. 5.

 Replaced the PCB Pad Layout drawing, the package isometric and mechanical outline for Case 1514--02

(SOT--89) with Case 2142--01 (SOT--89) as a result of the device transfer from a Freescale wafer fab to an external GaAs wafer fab and new assembly site. The new assembly and test site’s SOT--89 package has slight dimensional differences, pp. 1, 11--14. Refer to PCN13337, GaAs Fab Transfer.

4 Aug. 2014

 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test results of the device, p. 1

 Added Failure Analysis information, p. 15

5 Mar. 2016

 Overview paragraph updated to reflect actual matching of the device, p. 1

 Fig. 27, Product Marking: updated date code line to reflect improved traceability information, p. 11

MMG3014NT1

RF Device Data

Freescale Semiconductor, Inc.

15

How to Reach Us:

Home Page:

freescale.com

Web Support:

freescale.com/support

Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document.

Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions.

Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,

Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners.

E

2008, 2011, 2014, 2016 Freescale Semiconductor, Inc.

MMG3014NT1

Document Number: MMG3014NT1

16

RF Device Data

Freescale Semiconductor, Inc.