STMicroelectronics STM8SPLNB1 Datasheet
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STM8SPLNB1 DiSEqC™ slave microcontroller for SaTCR based LNBs and switchers Datasheet - production data Features Clock, reset and supply management – Reduced power consumption, – Safe power on/off management by low voltage detector (LVD), – 2.95 to 5.5 V operating voltage, – Internal 16MHz oscillator. TSSOP20 4.40 mm body Communication interface – Two DiSEqCTM communication interfaces, – Four I2C communication interfaces I/O ports. 4 output pins for control of a legacy matrix. SO20W 300 mils UFQFPN20 3 x 3 mm It is a complete hardware and firmware solution for system designers who require an implementation overview of the LNB device control according to DiSEqC standard (Digital Satellite Equipment Control). Description The STM8SPLNB1 is an 8-bit microcontroller dedicated to DiSEqC slave operation in SaTCR based LNBs (Low Noise Block) and switchers. Figure 1. Functional block diagram $28 -(Z2#/3# ,6$!6$ 6 33 0/7%2 3500,9 2%3%4 #/.42/, 6 #!0 ")4#/2% !,5 0!2!-%4%2 %%02/- )NTERNAL #,/#+ !$$2%33!.$$!4!"53 6 $$ 6K(Z $ETECTOR $I3%Q#)NTERFACE $28 $48 )# 3$! 3#, )# 3$! 3#, )# ,%'!#9-!42)8 #/.42/, 3$!-!4 3#,-!4 )# ,%'!#9-!42)8 #/.42/, 3$!-!4 3#,-!4 )#-/$% !) December 2014 This is information on a product in full production. DocID018831 Rev 5 1/44 www.st.com Contents STM8SPLNB1 Contents 1 Device description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.1 Implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.1.1 2 3 STM8SPLNB1 operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.1 Supported DiSEqC commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.2 DiSEqC commands details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/44 Command signaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.2.2 Command 0x0F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.2.3 Command 0x0D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.2.4 Command 0x38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.2.5 Command 0x5A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.2.6 Command 0x5B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Configuration parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.1 5 2.2.1 Configuration parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.1 4 Pins description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.1.3 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.1.4 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.3.2 VCAP external capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.3.3 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.3.4 Reset pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4.3.5 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 5.1 ECOPACK® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 5.2 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 DocID018831 Rev 5 STM8SPLNB1 5.3 Contents 5.2.1 TSSOP package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 5.2.2 SO20W package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 5.2.3 UFQFPN package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 5.3.1 6 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 6.1 STM8SPLNB1 DiSEqC™ SLAVE microcontroller option list . . . . . . . . . . 37 Appendix A DiSEqC™ protocol basics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 A.1 A.2 7 Physical layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 A.1.1 DC voltage on coaxial cable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 A.1.2 22 kHz signal on coaxial cable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 A.1.3 Data transfer on coaxial cable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Protocol layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 DocID018831 Rev 5 3/44 3 List of tables STM8SPLNB1 List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Table 25. Table 26. Table 27. Table 28. Table 29. Table 30. Table 31. Table 32. Table 33. Table 34. Table 35. Table 36. 4/44 STM8SPLNB1 pins description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 SaTCRs implementation - ST7LNB1 compatible mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 SaTCRs implementation - incremental order mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 STM8SPLNB1 DiSEqC™ supported commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Command 0x0F format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Command 0x0D format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Reply to command 0x0D format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Command 0x38 format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Command 0x5A format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Subcommands 0x5A format - ODU_SaTCR_Op . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Feeds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Command 0x5B format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Subcommands 0x5B format - ODU_SaTCR_Inst. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 STM8SPLNB1 EEPROM parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Truth table for support of 8 RF inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Application types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 DiSEqC Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Local oscillator frequencies. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Operating conditions at power-up/power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Total current consumption at VDD = 5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Output driving current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 RESET pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 EMS data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 EMI data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 20-pin, 4.40 mm body, 0.65 mm pitch mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 20-pin, plastic small outline (300 mils) mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . 32 20-lead, ultra thin, fine pitch quad flat no-lead package (3 x 3) package mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 DiSEqC™ frame byte definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Document revision history. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 DocID018831 Rev 5 STM8SPLNB1 List of figures List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Functional block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 STM8SPLNB1 typical configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 TSSOP20/SO20W pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 UFQFPN20 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Signaling of the DiSEqC-ST command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 SaTCR control configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 SaTCR control and legacy configuration (standard RF band) . . . . . . . . . . . . . . . . . . . . . . 18 SaTCR control and legacy configuration (wide RF band). . . . . . . . . . . . . . . . . . . . . . . . . . 19 Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 External capacitor CEXT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Recommended reset pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 20-pin, 4.40 mm body, 0.65 mm pitch. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 TSSOP20 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 20-pin, plastic small outline (300 mils) package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 20-lead, ultra thin, fine pitch quad flat no-lead package outline (3 x 3). . . . . . . . . . . . . . . . 33 Recommended footprint for on-board emulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Recommended footprint without on-board emulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Timing diagram for Tone Burst control signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 DiSEqC™ bit modulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Timing diagram for typical DiSEqC™ (1.0 version) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 DiSEqC™ message format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Microcontroller answer format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 DocID018831 Rev 5 5/44 5 Device description STM8SPLNB1 1 Device description 1.1 Implementation STM8SPLNB1 device is receiving DiSEqC signal on the coaxial cable, decoding and processing the DiSEqC commands. As a result, legacy matrix or I2C lines are controlled. The STM8SPLNB1 device can also send DiSEqC answer back to master through coaxial cable. STM8SPLNB1 is designed for usage with LNB devices with I2C bus control and/or direct pins control (see Figure 2: STM8SPLNB1 typical configuration). SaTCR1 device is typically used in LNB application (see www.st.com for more SaTCR1 information). Behavior of STM8SPLNB1 devices can be modified through a set of configuration parameters which are stored in device data EEPROM memory. Configuration is done also through specific DiSEqC commands. After final configuring the device can be locked to given configuration (vendor configuration). Figure 2: STM8SPLNB1 typical configuration shows the recommended configuration for the hardware connections for LNB control with STM8SPLNB1 devices. Kȍ KȍKȍ Kȍ 6 6$$ 633 , ȍ N& N& Kȍ ȝ) $28 3#, 3$! 3#, 3$! 6#!0 -/$% $48 Kȍ ȝ) 3#, 3$! 3#, 3$! 2%3%4 $28 ȍ 3!4#2 6 3!4#2 Figure 2. STM8SPLNB1 typical configuration ,EGACYMATRIXCONTROL ORNEXT)#CHANNELS 34-3,." , N& N& Kȍ K !)B 1. Power supply must have level 5V +/- 10% for correct operation. 6/44 DocID018831 Rev 5 STM8SPLNB1 Pins description Figure 3. TSSOP20/SO20W pinout $48 $28 $28 2%3%4 -/$% .# 633 6#!0 6$$ .# 3#, 3$! .# 3#,-!4 3$!-!4 3#,-!4 3$!-!4 .# 3#, 3$! !) 3$! 3#, $48 $28 $28 Figure 4. UFQFPN20 pinout .# 3#,-!4 .# 3$!-!4 633 6#!0 3#,-!4 3$!-!4 2%3%4 -/$% .# 3#, .# 3$! 6$$ 1.1.1 Device description !) Table 1. STM8SPLNB1 pins description pin no. pin no. TSSOP20 UFQFPN20 /SO20W pin name description note 9 6 VDD +5 V power supply +/- 10 % tolerance 7 4 VSS ground _ 4 1 8 5 VCAP filtering capacitor 1 wF capacitor to ground 3 20 DRX1 DiSEqC receive data input 2 HF signal after low pass filtering 2 19 DRX2 DiSEqC receive data input 2 HF signal after low pass filtering secondary channel (less priority - see later description) RESET device reset DocID018831 Rev 5 0.1 wF capacitor to ground (active low) 7/44 43 Device description STM8SPLNB1 Table 1. STM8SPLNB1 pins description (continued) pin no. pin no. TSSOP20 UFQFPN20 /SO20W description note 1 18 DTX DiSEqC transmit data output 22 kHz modulation signal - need coupling to HF signal 20 17 SCL1 I2C clock output I2C master channel 1 clock output 19 16 SDA1 I2C data input/output I2C master channel 1 data input/output 12 9 SCL2 I2C clock output I2C master channel 2 clock output 11 8 SDA2 I2C data input/output I2C master channel 2 data input/output 17 14 SCL3 I2C clock output I2C master channel 3 clock output 16 13 SDA3 I2C data input/output I2C master channel 3 data input/output 15 12 SCL4 I2C clock output I2C master channel 4 clock output 14 11 SDA4 I2C data input/output I2C master channel 4 data input/output 5 8/44 pin name 2 MODE I2C addressing mode select DocID018831 Rev 5 Selection of I2C addressing mode see note (2) under Table 2: SaTCRs implementation - ST7LNB1 compatible mode (pin has internal pull-up) STM8SPLNB1 2 STM8SPLNB1 operation STM8SPLNB1 operation STM8SPLNB1 has 8 output pins which can work as 4 I2C master channels. Each I2C channel can address 2 LNB devices (2 different I2C addresses: 0xC8 and 0xCA) - see Table 2: SaTCRs implementation - ST7LNB1 compatible mode and Table 3: SaTCRs implementation - incremental order mode for assignment of given SaTCR to given I2C bus and address. Assignment depends from I2C addressing mode EEPROM parameter - see Table 14: STM8SPLNB1 EEPROM parameters. As a convention, SaTCR1 must be associated to the BPF having the lowest center frequency of the application, SaTCR2 to the BPF having the next higher center frequency and so on. Table 2. SaTCRs implementation - ST7LNB1 compatible mode SatCR number SaTCR(1) SaTCR address 0 SaTCR1 0xC8 1 SaTCR2 0xCA 2 SaTCR3 0xC8 3 SaTCR4 0xCA 4 SaTCR5 0xC8 5 SaTCR6 0xCA 6 SaTCR7 0xC8 7 SaTCR8/ legacy SaTCR (for wide RF band applications) 0xCA I2C number I2C1 I2C2 I2C3 I2C4 1. Selection of ST7LNB1 compatible mode: pin MODE (see Table 1: STM8SPLNB1 pins description) must be grounded and I2C addressing mode EEPROM parameter (see Table 14: STM8SPLNB1 EEPROM parameters) must be set to 0. Otherwise (e.g. pin MODE is left open or I2C addressing mode EEPROM parameter is set to 1) is used incremental order mode. Table 3. SaTCRs implementation - incremental order mode SatCR number SaTCR(1) SaTCR address I2C number 0 SaTCR1 0xC8 I2C1 1 SaTCR2 0xCA I2C2 2 SaTCR3 0xC8 I2C3 3 SaTCR4 0xCA I2C4 4 SaTCR5 0xCA I2C1 5 SaTCR6 0xC8 I2C2 6 SaTCR7 0xCA I2C3 7 SaTCR8/ legacy SaTCR (for wide RF band applications) 0xC8 I2C4 DocID018831 Rev 5 9/44 43 STM8SPLNB1 operation STM8SPLNB1 1. Selection of incremental order mode: pin MODE (see Table 1: STM8SPLNB1 pins description) is left open or I2C addressing mode EEPROM parameter (see Table 14: STM8SPLNB1 EEPROM parameters) is set to 1. Another option is to decrease number of I2C channels and use the remaining pins for legacy matrix LNB control - e.g. to have 2 I2C channels (4 pins) and 4 legacy matrix output pins see Table 16: Application types. Operation mode and device behavior depends from final hardware configuration. This behavior is selected through configuration parameters - see Table 14: STM8SPLNB1 EEPROM parameters. Note: Advantage of using incremental order mode is in applications with up to 4 SaTCRs - which is common in practice. Then each SaTCR owns one I2C bus. I2C communication with another SaTCRs is running on different I2C bus - so it does not disturb HF signal on given SaTCR (SaTCR is sensitive to I2C bus signal transients). Advantage of using ST7LNB1 compatible mode is in applications where is used SaTCRs control together with legacy matrix outputs (MAT1-MAT4) - see Section 1.1.1: Pins description. In this case there remains free only 2 I2C buses for SaTCRs control (MAT1MAT4 pins occupy I2C3 and I2C4 bus). In ST7LNB1 compatible mode 2 I2C buses can address up to 4 SaTCRs - 2 SaTCRs per I2C bus. Disadvantage is the I2C bus disturbance to SaTCR which is not addressed - shared I2C bus (HF filters on I2C buses is recommended). 2.1 Supported DiSEqC commands In the following Table 4: STM8SPLNB1 DiSEqC™ supported commands are listed DiSEqC commands supported by STM8SPLNB1. For more details about commands, refer to the DiSEqC™ slave microcontroller specifications at www.eutelsat.com. Table 4. STM8SPLNB1 DiSEqC™ supported commands 10/44 command number command name 0x00 RESET 0x0D config read Read configuration parameters from EEPROM 0x0F config write Write configuration parameters to EEPROM 0x38 write to port DiSEqC 1.0: Write to port group command - Legacy commands 0x5A operation command DiSEqC-ST normal operation commands: ODU_Changechannel or ODU_SatCROFF 0x5B installation command DiSEqC-ST installation commands: ODU_Config, ODU_EEPvar.LOFREQ or ODU_SatCRxON function Reset DiSEqC™ microcontroller DocID018831 Rev 5 STM8SPLNB1 STM8SPLNB1 operation 2.2 DiSEqC commands details 2.2.1 Command signaling To be detected, the DiSEqC-ST commands must be sent after a voltage change from 13 to 18 V. A delay time between 4 ms and 24 ms must be respected before sending the DiSEqCST commands (see Figure 5: Signaling of the DiSEqC-ST command). Figure 5. Signaling of the DiSEqC-ST command 6 $I3%Q#34&RAME ^MS MSTMS 6 !) 2.2.2 Command 0x0F STM8SPLNB1 devices are shipped to customers with a default parameter values. These parameters can be updated using a dedicated 0x0F DiSEqC command. This command has the following format where “[data]” is the parameter value to be programmed at the “[index]” location as described in Table 14: STM8SPLNB1 EEPROM parameters. Table 5. Command 0x0F format frame DiSEqC™ address command data1 data2 0xE0/0xE2 [device address] 0x0F [index] [data] Note: The special command E0 xx 0F FF FF protects the EEPROM data from any subsequent write access (where xx is the corresponding DiSEqC slave address). 2.2.3 Command 0x0D This command is dedicated for reading configuration parameters. This command has the following format where the “[index]” is location to be read as shown in Table 14: STM8SPLNB1 EEPROM parameters. Table 6. Command 0x0D format frame DiSEqC™ address command data1 0xE2 [device address] 0x0D [index] The format of the reply frame from slave has format according Table 7: Reply to command 0x0D format where “[data]” is the byte read from EEPROM. Table 7. Reply to command 0x0D format frame data1 0xE4 [data] DocID018831 Rev 5 11/44 43 STM8SPLNB1 operation 2.2.4 STM8SPLNB1 Command 0x38 This command is used to write to port group command - legacy support. For application supporting the legacy (except for application number 1), the backwards signaling (13/18 V, 22 kHz tone) is recognized until a valid DiSEqC 1.0 command is detected. The following Table 8: Command 0x38 format presents the truth table for the legacy commands. . 2.2.5 Table 8. Command 0x38 format command equivalent backward signalling selected feed band polarity satellite E0 xx 38 F0 13V / 0kHz 0 Low Vertical A E0 xx 38 F1 13V / 22kHz 1 High Vertical A E0 xx 38 F2 18V / 0kHz 2 Low Horizontal A E0 xx 38 F3 18V / 22kHz 3 High Horizontal A Command 0x5A This command is used during LNB (or switched) normal operation (default operation after configuration). Command 0x5A is DiSEqC command (see Table 9: Command 0x5A format) with two data bytes. In dependence from those data bytes are performed two subcommands which descriptions are in Table 10: Subcommands 0x5A format - ODU_SaTCR_Op. Table 9. Command 0x5A format frame DiSEqC™ address command data1 data2 0xE0/0xE2 [device address] 0x5A [data1](1) [data2](1) 1. See Table 10: Subcommands 0x5A format - ODU_SaTCR_Op for details. . Table 10. Subcommands 0x5A format - ODU_SaTCR_Op data1 data2 subcommand description [7:5] [4:2] [1:0] [7:0] ODU_ChangeChannel SaTCR(1) Feed(2) Tun[9:8](3) Tun[7:0](3) ODU_PowerOff SaTCR(1) 0 0x00 This command is used for the channel selection. This command is used to put a SaTCR in low power mode. 1. SaTCR number - see Table 2: SaTCRs implementation - ST7LNB1 compatible mode. 2. Feed parameter - see Table 11: Feeds and Table 15: Truth table for support of 8 RF inputs. 3. Tuning word - see notes in Table 14: STM8SPLNB1 EEPROM parameters for description. 12/44 DocID018831 Rev 5 STM8SPLNB1 STM8SPLNB1 operation Table 11. Feeds(1) . RF input Feed Band Polarization Satellite 0 Low Vertical A 1 High Vertical A 2 Low Horizontal A 3 High Horizontal A 4 Low Vertical B 5 High Vertical B 6 Low Horizontal B 7 High Horizontal B 1. Applications supporting legacy are limited to one satellite only (satellite A - see Table 8: Command 0x38 format). 2.2.6 Command 0x5B This command is used only during LNB (or switched) installation/configuration. Command 0x5B is DiSEqC command (see Table 12: Command 0x5B format) with two data bytes. In dependence from those data bytes are performed three subcommands which descriptions are in Table 13: Subcommands 0x5B format - ODU_SaTCR_Inst. Table 12. Command 0x5B format frame DiSEqC™ address command data1 data2 0xE0/0xE2 [device address] 0x5B [data1](1) [data2](1) 1. See Table 13.: Subcommands 0x5B format - ODU_SaTCR_Inst for details. DocID018831 Rev 5 13/44 43 STM8SPLNB1 operation . STM8SPLNB1 Table 13. Subcommands 0x5B format - ODU_SaTCR_Inst data1 data2 Subcommand description [7:5] ODU_Config ODU_Lofreq ODU_SaTCRxSignalOn SaTCR(1) SaTCR(1) xxh [4:2] [1:0] 0 1 0 2 [7:0] AppliNum(2) This command is sent by the STB in order to set the STM8SPLNB1 application number. If the data2 value corresponds to the STM8SPLNB1 AppliNum, then the STM8SPLNB1 commands SaTCR indicated in data1 to send a tone having frequency: F = BPF(4), else: F = (BPF + 20 MHz). This command is sent by the STB in order to set the L.O. frequencies present in the LNB. If the data2 value corresponds to the STM8SPLNB1 LOfreqNum, (3) LOfreqNum then the STM8SPLNB1 commands SaTCR indicated in data1 to send a tone having frequency: F = BPF(4), else: F = (BPF + 20 MHz). 0 xxh When receiving this command the STM8SPLNB1 commands all connected SaTCRs to send a tone in order to indicate their respective BPF(4) center frequencies. 1. SaTCR number - see Table 2: SaTCRs implementation - ST7LNB1 compatible mode 2. See Table 17: DiSEqC Applications for details. 3. See Table 18: Local oscillator frequencies for details. 4. BPF is bandpass center frequency for a given SaTCR - see Table 14: STM8SPLNB1 EEPROM parameters for details. 14/44 DocID018831 Rev 5 STM8SPLNB1 3 Configuration parameters Configuration parameters STM8SPLNB1 devices are compliant with the Eutelsat DiSEqC slave microcontroller specifications version 1.0, but they are not scanning the control pins to determine the slave configuration. Instead this are the slave configuration parameters stored in EEPROM memory and must be programmed for each specific application through programming parameters in STM8SPLNB1 data EEPROM memory. The EEPROM parameters described are the default configurations in our firmware. Custom configurations can be programmed at factory on request according customer requirements (FastROM process available). Customer can reprogram all EEPROM parameters through DiSEqC command - see Section 2.2.2: Command 0x0F. 3.1 Configuration parameters The slave configuration parameters for STM8SPLNB1 are listed in Table 14: STM8SPLNB1 EEPROM parameters: Table 14. STM8SPLNB1 EEPROM parameters description default value index parameter 00 Slave Address 01 SaTCR1 BPF (lsb) 0x5D 02 SaTCR1 BPF (msb) 0x02 03 SaTCR2 BPF (lsb) 0xC6 04 SaTCR2BPF (msb) 0x02 05 SaTCR3 BPF (lsb) 0x48 06 SaTCR3 BPF (msb) 07 SaTCR4 BPF (lsb) 0xFC 08 SaTCR4 BPF (msb) 0x03 09 SaTCR5 BPF (lsb) 0xFF 0A SaTCR5BPF (msb) 0xFF 0B SaTCR6 BPF (lsb) 0xFF 0C SaTCR6 BPF (msb) 0xFF 0D SaTCR7 BPF(lsb) / legacy SaTCR Low band (msb) 0xFF 0E SaTCR7 BPF(msb) / legacy SaTCR Low band (lsb) DiSEqC slave address(1) (2) 0x11 0x03 0xFF (3) 0F SaTCR8 BPF(lsb) / legacy SaTCR High band (msb) 0xFF 10 SaTCR8 BPF(msb) / legacy SaTCR High band (lsb) 0xFF 11 Applitype Application type number (refer to Table 16.) DocID018831 Rev 5 0x00 15/44 43 Configuration parameters STM8SPLNB1 Table 14. STM8SPLNB1 EEPROM parameters (continued) index parameter description default value 12 AppliNum Application number (refer to Table 17: DiSEqC Applications) 0x04 13 High L.O freq Number Refer to Table 18: Local oscillator frequencies 0x04 14 Low L.O freq Number Refer to Table 18: Local oscillator frequencies 0x02 15 16 17 18 19 1A 1B 1C 1D 1E 1F 20 21 22 23 24 0xAC SaTCR1 matrix truth table 0x35 0x59 SaTCR2 matrix truth table 0x6A 0x56 SaTCR3 matrix truth table 0x9A 0x95 SaTCR4 matrix truth table 0xFF SaTCR5 matrix truth table 0xFF 0xFF SaTCR6 matrix truth table 0xFF 0xFF SaTCR7 matrix truth table 0xFF 0xFF SaTCR8 matrix truth table / legacy matrix 25 0xFF SaTCRs GAIN(5) 26 27 SaTCRs 1 to 4 Gain 0xFF SaTCRs 5 to 8 Gain 0xFF (6) SaTCRs number 2 0x04 2 28 I C addressing mode 29 Software Version Number version number identification Reserved (8) 2A 2B (7) defines SaTCRs assignment to I C bus 0x00 0x15 0x00 0x00 1. Address 0x00 is also recognized as valid address. 2. SaTCRx BPF = BPFx center frequency [MHz]/2. 16/44 0xA6 (4) DocID018831 Rev 5 STM8SPLNB1 Configuration parameters 3. When an application supports the wide RF band only one local oscillator with a frequency FLO is present in the LNB. In this case the selection of the high or the low band for the legacy output is performed by a dedicated SaTCR. Two parameters are needed for the band selection: - The tuning word for the low band selection = [(FLO (MHz) - FLow (MHz))/4] - 350: where FLow corresponds to the Low LO frequency. - The tuning word for the high band selection = [(FLO (MHz) - FHigh (MHz))/4] - 350: where FHigh corresponds to the High band LO frequency. Example: in a wide band application with FLO= 13250 MHz, for emulating a low band local oscillator at 9750 MHz, index 0x0D and index 0x0E must be loaded with the decimal value dec [0D:0E] = round ((13250-9750)/4) - 350 = 525. 4. Matrix truth table for SaTCRx or legacy: 1) If 4 RF inputs are implemented then the matrix truth table has coding on 2 bytes: “aaaabbbbccccdddd” where: aaaa = selection of Feed1 on SaTCRx, aaaa = [MAT4, MAT3, MAT2, MAT1] bbbb = selection of Feed0 on SaTCRx, bbbb = [MAT4, MAT3, MAT2, MAT1] cccc = selection of Feed3 on SaTCRx, cccc = [MAT4, MAT3, MAT2, MAT1] dddd = selection of Feed2 on SaTCRx,dddd = [MAT4, MAT3, MAT2, MAT1] 2) If 8 RF inputs are implemented then the truth table given in Table 15: Truth table for support of 8 RF inputs is used. 5. To enable the support of 8 RF inputs: the value ‘0x0000’ has to be programmed in index 15h and 16h. SaTCRs gain value: it has the following format on two bytes: “AaBbCcDd EeFfGgHh” where Aa= gain for SaTCR1, Bb = gain for SaTCR2, Cc= gain for SaTCR3, Dd=gain for SaTCR4, Ee= gain for SaTCR5, Ff= gain for SaTCR6, Gg= gain for SaTCR7, Hh=gain for SaTCR8 or legacy SaTCR. Upper case letters and upper case letters indicate LNA and IF gain, respectively. 6. SaTCRs number does not include the legacy SaTCR for the wide RF band applications. 7. Defines assignment of SaTCR to I2C bus. 1 = incremental order mode, 0 = ST7LNB1 compatible mode or incremental order mode in dependency from MODE pin (see Table 1: STM8SPLNB1 pins description) state. See notes under Table 2: SaTCRs implementation - ST7LNB1 compatible mode and Table 3: SaTCRs implementation - incremental order mode for details in assignment. 8. Reserved bytes: do not write to this location. Table 15. Truth table for support of 8 RF inputs Feed MAT1 MAT2 MAT3 MAT4 0 0 0 0 0 1 1 0 0 0 2 0 1 0 0 3 1 1 0 0 4 0 0 1 0 5 1 0 1 0 6 0 1 1 0 7 1 1 1 0 Table 16. Application types number 0 application type SaTCR control(1) (see Figure 6: SaTCR control configuration) description – Control through I2C of up to 8 SaTCRs DocID018831 Rev 5 17/44 43 Configuration parameters STM8SPLNB1 Table 16. Application types (continued) number application type description 1 SaTCR and legacy (standard RF band) – Control through I2C up to 4 SaTCRs (see Figure 7: SaTCR control and legacy configuration (standard RF – Control of a legacy matrix using up to 4 pins band)) 2 SaTCR and legacy (wide RF band) (see Figure 8: SaTCR control and legacy configuration (wide RF band)) – Control though I2C of up to 6 SaTCRs + legacy – Control of a dedicated SaTCR for the legacy support 1. This application could support up to 8 RF feeds. (applications 1 and 2 are limited to 4 RF feeds). Figure 6. SaTCR control configuration 3A4#2 )# 3A4#2 )# $28$I3%Q#34 -ATRIX $28$I3%Q#34 )# 34-30,." 3A4#2 !) Figure 7. SaTCR control and legacy configuration (standard RF band) 3A4#2 )# $28$I3%Q#34 -ATRIX 3A4#2 )# -!4;TO= $28$I3%Q#34 34-30,." !) 18/44 DocID018831 Rev 5 STM8SPLNB1 Configuration parameters Figure 8. SaTCR control and legacy configuration (wide RF band) 3A4#2 )# $28$I3%Q#34 )# -ATRIX 3A4#2 $28$I3%Q#34 )# 34-30,." ,EGACY 3A4#2 !) Table 17. DiSEqC Applications Application number Application description 0x01 Single SatCR and legacy (standard RF band) 0x02 Twin SatCR (standard RF band) 0x03 Twin SatCR and legacy (standard RF band) 0x04 Quad SatCR (standard RF band) 0x05 Double Twin SatCR (standard RF band) 0x06 Twin SatCR (wide RF band) 0x07 Twin SatCR and legacy (wide RF band) 0x08 Quad SatCR (wide RF band) 0x09 8 SatCR (standard RF band) 0x0A 6 SatCR (standard RF band) 0x0B Quad SatCR and legacy (standard RF band) 0x0C - 0xFF reserved DocID018831 Rev 5 19/44 43 Configuration parameters STM8SPLNB1 Table 18. Local oscillator frequencies Wide RF band Standard RF band LofreqNum (hex) 20/44 Local oscillator frequency 0x00 none 0x01 not known 0x02 9.750 GHz 0x03 10.000 GHz 0x04 10.600 GHz 0x05 10.750 GHz 0x06 11.000 GHz 0x07 11.250 GHz 0x08 11.475 GHz 0x09 20.250 GHz 0x0A 5.150 GHz 0x0B 1.585 GHz 0x0C 13.850 GHz 0x0D not allocated 0x0E not allocated 0x0F not allocated 0x10 not allocated 0x11 10.000 GHz 0x12 10.200 GHz 0x13 13.250 GHz 0x14 13.450 GHz 0x15 - 0x1F not allocated DocID018831 Rev 5 STM8SPLNB1 Electrical characteristics 4 Electrical characteristics 4.1 Parameter conditions Unless otherwise specified, all voltages are referred to VSS. 4.1.1 Minimum and maximum values Unless otherwise specified the minimum and maximum values are guaranteed in the worst conditions of ambient temperature, supply voltage and frequencies by tests in production on 100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by the selected temperature range). Data based on characterization results, design simulation and/or technology characteristics are indicated in the table footnotes and are not tested in production. Based on characterization, the minimum and maximum values refer to sample tests and represent the mean value plus or minus three times the standard deviation (mean ± 3 ū). 4.1.2 Typical values Unless otherwise specified, typical data are based on TA = 25 °C, VDD = 5 V. They are given only as design guidelines and are not tested. 4.1.3 Loading capacitor The loading conditions used for pin parameter measurement are shown in the following figure. Figure 9. Pin loading conditions 34- PIN P& 4.1.4 Pin input voltage The input voltage measurement on a pin of the device is described in the following figure. Figure 10. Pin input voltage 34-PIN 6). DocID018831 Rev 5 21/44 43 Electrical characteristics 4.2 STM8SPLNB1 Absolute maximum ratings Stresses above those listed as ‘absolute maximum ratings’ may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Table 19. Voltage characteristics Symbol VDDx - VSS VIN VESD Ratings Min Max -0.3 6.5 Input voltage on any pin VSS - 0.3 VDD + 0.3 Electrostatic discharge voltage See : Absolute maximum ratings (electrical sensitivity) Supply voltage Unit V Table 20. Current characteristics Symbol Max.(1) Ratings IVDD Total current into VDD power lines (source)(2) 100 IVSS Total current out of VSS ground lines (sink)(2) 80 Output current sunk by any I/O and control pin 20 IIO IINJ(PIN)(3)(4) ūIINJ(PIN) (3) Output current source by any I/Os and control pin - 20 Injected current on NRST pin ±4 Injected current on any other pin(5) Total injected current (sum of all I/O and control Unit mA ±4 pins)(5) ± 20 1. Data based on characterization results, not tested in production. 2. All power (VDD) and ground (VSS) pins must always be connected to the external supply. 3. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. For true open-drain pads, there is no positive injection current, and the corresponding VIN maximum must always be respected 4. Negative injection disturbs the analog performance of the device. 5. When several inputs are submitted to a current injection, the maximum ūIINJ(PIN) is the absolute sum of the positive and negative injected currents (instantaneous values). These results are based on characterization with ūIINJ(PIN) maximum current injection on four I/O port pins of the device. Table 21. Thermal characteristics 22/44 Symbol Ratings Value TSTG Storage temperature range -65 to +150 TJ Maximum junction temperature 150 DocID018831 Rev 5 Unit °C STM8SPLNB1 Electrical characteristics 4.3 Operating conditions 4.3.1 General operating conditions Table 22. General operating conditions Symbol Parameter Conditions Min Max Unit fCPU Internal CPU clock frequency - 0 16 MHz VDD Standard operating voltage - 2.95 5.5 V CEXT: capacitance of external capacitor - 470 3300 nF - 0.3 ˖ - 15 nH VCAP(1) ESR of external capacitor ESL of external capacitor at 1 MHz(2) TSSOP20 - 238 Power dissipation at TA = 85 °C SO20W - 220 UFQFPN20 - 220 TA Ambient temperature Maximum power dissipation -40 85 TJ Junction temperature range - -40 105 PD(3) mW °C 1. Care should be taken when selecting the capacitor, due to its tolerance, as well as the parameter dependency on temperature, DC bias and frequency in addition to other factors. The parameter maximum value must be respected for the full application range. 2. This frequency of 1 MHz as a condition for VCAP parameters is given by design of internal regulator. 3. To calculate PDmax(TA), use the formula PDmax = (TJmax - TA)/ˆJA (see 5.3: Thermal characteristics) Table 23. Operating conditions at power-up/power-down Symbol tVDD tTEMP Parameter VDD rise time rate VDD fall time rate(1) Reset release delay Conditions Min Typ Max - 2 - - - 2 - - VDD rising - - 1.7 2.6 2.7 2.85 VIT+ Power-on reset threshold - VIT- Brown-out reset threshold - 2.5 2.65 2.8 VHYS(BOR) Brown-out reset hysteresis - - 70 - Unit μs/V ms V mV 1. Reset is always generated after a tTEMP delay. The application must ensure that VDD is still above the minimum operating voltage (VDD min.) when the tTEMP delay has elapsed. DocID018831 Rev 5 23/44 43 Electrical characteristics 4.3.2 STM8SPLNB1 VCAP external capacitor Stabilization for the internal voltage regulator is achieved connecting an external capacitor CEXT to the VCAP pin (see Figure 2: STM8SPLNB1 typical configuration). CEXT is specified in Table 22: General operating conditions. Care should be taken to limit the series inductance to less than 15 nH. Figure 11. External capacitor CEXT # %32 %3, 2LEAK 1. ESR is the equivalent series resistance and ESL is the equivalent inductance. 4.3.3 Supply current characteristics Total current consumption in run mode The MCU is placed under the following conditions: – All I/O pins in input mode with a static value at VDD or VSS (no load) Subject to general operating conditions for VDD and TA. Table 24. Total current consumption at VDD = 5 V Symbol Parameter IDD(RUN) Supply current in run mode IDD(R) Supply current in reset state(2) Conditions Typ Max(1) 4.7 5.8 fCPU = 16 MHz, VDD = 5V HSI RC osc. (16 MHz) fCPU = 16 MHz, VDD = 3.3V HSI RC osc. (16 MHz) 4.7 5.8 - 400 - Unit mA VDD = 5 V μA 1. Data based on characterization results, not tested in production. 2. Characterized with all I/Os tied to VSS. Table 25. Output driving current Symbol VOL VOH Parameter Output low level Output high level Conditions Min Max IIO = 10 mA, VDD = 5 V - 2 IIO = 4 mA, VDD = 3.3 V - 1(1) IIO = 10 mA, VDD = 5 V 2.8 - IIO = 4 mA, VDD = 3.3 V 2.1(1) - 1. Data based on characterization results, not tested in production 24/44 DocID018831 Rev 5 Unit V STM8SPLNB1 4.3.4 Electrical characteristics Reset pin characteristics Subject to general operating conditions for VDD and TA unless otherwise specified. Table 26. RESET pin characteristics Symbol Parameter Conditions Min VIL(RST) RESET Input low level voltage (1) - -0.3 V 0.3 x VDD (1) - 0.7 x VDD VDD + 0.3 RESET Pull-up resistor (2) - 30 VIH(RST) RPU(RST) RESET Input high level voltage Typ 55 Max 80 Unit V k˖ 1. Data based on characterization results, not tested in production. 2. The RPU pull-up equivalent resistor is based on a resistive transistor. The reset network shown in the following Figure 12. protects the device against parasitic resets. The user must ensure that the level on the NRST pin can go below the VIL max. level specified in the Table 26.: RESET pin characteristics. Otherwise the reset is not taken into account internally. Figure 12. Recommended reset pin protection 34- 6$$ 205 %XTERNAL RESET CIRCUIT .234 &ILTER )NTERNALRESET & OPTIONAL DocID018831 Rev 5 25/44 43 Electrical characteristics 4.3.5 STM8SPLNB1 EMC characteristics Susceptibility tests are performed on a sample basis during product characterization. Functional EMS (electromagnetic susceptibility) While executing a simple application (toggling 2 LEDs through I/O ports), the product is stressed by two electromagnetic events until a failure occurs (indicated by the LEDs). ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2 standard. FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with the IEC 1000-4-4 standard. A device reset allows normal operations to be resumed. The test results are given in the table below based on the EMS levels and classes defined in application note AN1709 (EMC design guide for STMicrocontrollers). Designing hardened software to avoid noise problems EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the application. 1. Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the RESET pin for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. Table 27. EMS data Symbol 26/44 Parameter Conditions Level/class VFESD VDD 3.3 V, TA 25 °C, Voltage limits to be applied on any I/O pin fCPU 16 MHz (HSI clock), to induce a functional disturbance conforming to IEC 1000-4-2 2/B VEFTB Fast transient voltage burst limits to be applied through 100 pF on VDD and VSS pins to induce a functional disturbance VDD3.3 V, TA 25 °C, fCPU 16 MHz (HSI clock), conforming to IEC 1000-4-4 4/A DocID018831 Rev 5 STM8SPLNB1 Electrical characteristics Electromagnetic interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm SAE J 1752/3 which specifies the board and the loading of each pin. Table 28. EMI data Conditions Symbol Parameter Monitored frequency band General conditions SEMI 0.1 MHz to 30 MHz VDD 5 V 30 MHz to 130 MHz Peak level TA 25 °C LQFP32 package 130 MHz to 1 GHz Conforming to SAE J 1752/3 SAE EMI level SAE EMI level fCPU(1) Unit 16 MHz 3 10 7 dBμV 2.5 1. Data based on characterization results, not tested in production. Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU, and DLU) using specific measurement methods, the product is stressed to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model can be simulated: Human body model. This test conforms to the JESD22-A114A/A115A standard. For more details, refer to the application note AN1181. Table 29. ESD absolute maximum ratings Symbol VESD(HBM) Ratings Electrostatic discharge voltage (Human body model) Electrostatic discharge voltage VESD(CDM) (Charge device model) Conditions Class TA 25 °C, conforming to JESD22-A114 A TA LQFP32 package 25 °C, conforming to SD22-C101 Maximum Unit value(1) 4000 V IV 1000 1. Data based on characterization results, not tested in production DocID018831 Rev 5 27/44 43 Electrical characteristics STM8SPLNB1 Static latch up Two complementary static tests are required on ten parts to assess the latch up performance: A supply overvoltage (applied to each power supply pin) A current injection (applied to each input, output and configurable I/O pin) are performed on each sample. This test conforms to the EIA/JESD 78 IC latch up standard. For more details, refer to the application note AN1181. Table 30. Electrical sensitivities Symbol LU Parameter Static latch up class Conditions Class(1) TA 25 °C A TA 85 °C A 1. Class description: A Class is an STMicroelectronics internal specification. All its limits are higher than the JEDEC specifications, that means when a device belongs to class A it exceeds the JEDEC standard. B class strictly covers all the JEDEC criteria (international standard). 28/44 DocID018831 Rev 5 STM8SPLNB1 Package information 5 Package information 5.1 ECOPACK® In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID018831 Rev 5 29/44 43 Package information STM8SPLNB1 5.2 Package mechanical data 5.2.1 TSSOP package mechanical data Figure 13. 20-pin, 4.40 mm body, 0.65 mm pitch $ C % % 3%!4).' 0,!.% # MM '!5'%0,!.% 0). )$%.4)&)#!4)/. K AAA # , ! ! ! B , E 9!?-%?6 Table 31. 20-pin, 4.40 mm body, 0.65 mm pitch mechanical data inches(1) mm Dim. Min Typ Max Min Typ Max A - - 1.200 - - 0.0472 A1 0.050 - 0.150 0.0020 - 0.0059 A2 0.800 1.000 1.050 0.0315 0.0394 0.0413 b 0.190 - 0.300 0.0075 - 0.0118 c 0.090 - 0.200 0.0035 - 0.0079 D(2) 6.400 6.500 6.600 0.2520 0.2559 0.2598 E 6.200 6.400 6.600 0.2441 0.2520 0.2598 4.300 4.400 4.500 0.1693 0.1732 0.1772 e - 0.650 - - 0.0256 - L 0.450 0.600 0.750 0.0177 0.0236 0.0295 L1 - 1.000 - - 0.0394 - (3) E1 30/44 DocID018831 Rev 5 STM8SPLNB1 Package information Table 31. 20-pin, 4.40 mm body, 0.65 mm pitch mechanical data (continued) inches(1) mm Dim. k Min Typ Max Min Typ Max 0.0° - 8.0° 0.0° - 8.0° aaa 0.100 0.0039 1. Values in inches are converted from mm and rounded to 4 decimal digits 2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15 mm per side. 3. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not exceed 0.25mm per side. Figure 14. TSSOP20 recommended footprint DocID018831 Rev 5 9!?&0?6 31/44 43 Package information 5.2.2 STM8SPLNB1 SO20W package mechanical data Figure 15. 20-pin, plastic small outline (300 mils) package Table 32. 20-pin, plastic small outline (300 mils) mechanical data inches(1) mm Dim. Min Typ Max Min Typ Max A 2.350 - 2.650 0.0925 - 0.1043 A1 0.100 - 0.300 0.0039 - 0.0118 B 0.330 - 0.510 0.0130 - 0.0201 C 0.230 - 0.320 0.0091 - 0.0126 D 12.600 - 13.000 0.4961 - 0.5118 E 7.400 - 7.600 0.2913 e - 1.270 - - 0.0500 - H 10.000 - 10.650 0.3937 - 0.4193 h 0.250 - 0.750 0.0098 - 0.0295 L 0.400 - 1.270 0.0157 - 0.0500 k 0.0° - 8.0° 0.0° - 8.0° - Tolerance (mm) Tolerance (inches) ddd 0.100 0.0039 1. Values in inches are converted from mm and rounded to 4 decimal digits 32/44 0.2992 DocID018831 Rev 5 STM8SPLNB1 5.2.3 Package information UFQFPN package mechanical data Figure 16. 20-lead, ultra thin, fine pitch quad flat no-lead package outline (3 x 3) $ % 0IN 4/06)%7 , $ DDD , E ! , , E B % , ! ! "/44/-6)%7 3)$%6)%7 !!?-%?6 1. Drawing is not to scale Table 33. 20-lead, ultra thin, fine pitch quad flat no-lead package (3 x 3) package mechanical data inches(1) mm Dim. Min Typ Max Min Typ Max D - 3.000 - - 0.1181 - E - 3.000 - - 0.1181 - A 0.500 0.550 0.600 0.0197 0.0217 0.0236 A1 0.000 0.020 0.050 0.0000 0.0008 0.0020 A3 - 0.152 - - 0.0060 - e - 0.500 - - 0.0197 - L1 0.500 0.550 0.600 0.0197 0.0217 0.0236 L2 0.300 0.350 0.400 0.0118 0.0138 0.0157 DocID018831 Rev 5 33/44 43 Package information STM8SPLNB1 Table 33. 20-lead, ultra thin, fine pitch quad flat no-lead package (3 x 3) package mechanical data (continued) inches(1) mm Dim. Min Typ Max Min Typ Max L3 - 0.375 - - 0.0148 - L4 - 0.200 - - 0.0079 - L5 - 0.150 - - 0.0059 - b 0.180 0.250 0.300 0.0071 0.0098 0.0118 ddd 0.050 0.0020 1. Values in inches are converted from mm and rounded to 4 decimal digits. Figure 17. Recommended footprint for on-board emulation PP PP >@ PP >@ PP PP>@ PP >@ PP>@ PP>@ %RWWRPYLHZ DL 1. Drawing is not to scale 34/44 DocID018831 Rev 5 STM8SPLNB1 Package information Figure 18. Recommended footprint without on-board emulation !!?&0?6 1. Drawing is not to scale 2. Dimensions are in millimeters DocID018831 Rev 5 35/44 43 Package information 5.3 STM8SPLNB1 Thermal characteristics The maximum chip junction temperature (TJmax) must never exceed the values given in Table 22: General operating conditions. The maximum chip-junction temperature, TJmax, in degrees Celsius, may be calculated using the following equation: TJmax = TAmax + (PDmax x ˆJA) Where: TAmax is the maximum ambient temperature in C ˆJA is the package junction-to-ambient thermal resistance in C/W PDmax is the sum of PINTmax and PI/Omax (PDmax = PINTmax + PI/Omax) PINTmax is the product of IDD and VDD, expressed in Watts. This is the maximum chip internal power. PI/Omax represents the maximum power dissipation on output pins Where: PI/Omax = (VOL*IOL) + ((VDD-VOH)*IOH), taking into account the actual VOL/IOL and VOH/IOH of the I/Os at low and high level in the application. Table 34. Thermal characteristics(1) Symbol ˆJA Parameter Value Thermal resistance junction-ambient TSSOP20 - 4.4 mm 84 Thermal resistance junction-ambient SO20W - (300 mils) 91 Thermal resistance junction-ambient UFQFPN20 - 3 x 3 mm 90 1. Thermal resistances are based on JEDEC JESD51-2 with 4-layer PCB in a natural convection environment. 5.3.1 Reference document JESD51-2 integrated circuits thermal test method environment conditions - natural convection (still air). Available from www.jedec.org. 36/44 DocID018831 Rev 5 Unit °C/W STM8SPLNB1 Ordering information 6 Ordering information 6.1 STM8SPLNB1 DiSEqC™ SLAVE microcontroller option list (Last update: Sept 2010) Customer ..................................................................................................................... Address ..................................................................................................................... Contact ..................................................................................................................... Phone no. ..................................................................................................................... Reference FASTROM Code FASTROM code name is assigned by STMicroelectronics Conditioning (check only one option): Tape & reel [ ] or Tube/Tray[ ] Package type (check only one option): TSSOP20 [ ] or SO20W [ ] or UFQFPN20 [ ] EEPROM Parameters: (any modified default settings [DEF] should be written in the Custom boxes [CUST]) INDEX PARAMETER DEF CUST 00 Slave Address 11h [ h] 01 SaTCR1 BPF (lsb) 5Dh [ h] 02 SaTCR1 BPF (msb) 02h [ h] 03 SaTCR2 BPF (lsb) C6h [ h] 04 SaTCR2BPF (msb) 02h [ h] 05 SaTCR3 BPF (lsb) 48h [ h] 06 SaTCR3 BPF (msb) 03h [ h] 07 SaTCR4 BPF (lsb) FCh [ h] 08 SaTCR4 BPF (msb) 03h [ h] 09 SaTCR5 BPF (lsb) FFh [ h] 0A SaTCR5BPF (msb) FFh [ h] 0B SaTCR6 BPF (lsb) FFh [ h] 0C SaTCR6 BPF (msb) FFh [ h] 0D SaTCR7 BPF(lsb)/Legacy, SaTCR Low band(msb) FFh [ h] 0E SaTCR7 BPF(msb)/Legacy, SaTCR Low band (lsb) FFh [ h] 0F SaTCR8 BPF(lsb)/Legacy, SaTCR High band (msb) FFh [ h] DocID018831 Rev 5 37/44 43 Ordering information STM8SPLNB1 10 SaTCR8 BPF(msb)/Legacy, SaTCR High band (lsb) FFh [ h] 11 Applitype 00h [ h] 12 AppliNum 04h [ h] 13 High L.O freq Number 04h [ h] 14 Low L.O freq Number 02h [ h] 15 SaTCR1 matrix truth table ACh [ h] 35h [ h] 59h [ h] 6Ah [ h] 56h [ h] 9Ah [ h] 95h [ h] A6h [ h] FFh [ h] FFh [ h] FFh [ h] FFh [ h] FFh [ h] FFh [ h] 16 17 SaTCR2 matrix truth table 18 19 SaTCR3 matrix truth table 1A 1B SaTCR4 matrix truth table 1C 1D SaTCR5 matrix truth table 1E 1F SaTCR6 matrix truth table 20 21 SaTCR7 matrix truth table 22 23 SaTCR8 matrix truth table FFh [ h] 24 Legacy matrix FFh [ h] 25 SaTCRs GAIN FFh [ h] FFh [ h] 26 27 SaTCRs number 04h [ h] 28 I2C addressing mode 00h [ h] 29 Software version 15h [ h] (Please refer to Table 14: STM8SPLNB1 EEPROM parameters in the datasheet for full descriptions and notes of EEPROM Parameters) 38/44 Comments ..................................................................................................................... Notes ..................................................................................................................... Date ..................................................................................................................... Signature ..................................................................................................................... DocID018831 Rev 5 STM8SPLNB1 Appendix A DiSEqC™ protocol basics DiSEqC™ protocol basics For better understanding the document is here small overview of DiSEqC™ protocol (Digital Satellite Equipment Control). A.1 Physical layer The DiSEqC™ message is transferred between master and slave(s) through existing coaxial cable which delivers also the HF signal. The slave device(s) can be also powered through the same coaxial cable from master. A.1.1 DC voltage on coaxial cable Powering of the slave devices is performed by applying DC voltage on HF signal. The voltage level should be from 13 V to 18 V. Slave device uses this voltage for powering itself after some voltage regulator (e.g. +5 V regulator). The voltage level also signalizes different DiSEqC™ state. There exists 2 states: 13 V voltage level 18 V voltage level Those states are used in DiSEqC™ protocol signalization - horizontal or vertical polarization selection. A.1.2 22 kHz signal on coaxial cable To the signal on coaxial cable - HF signal and DC voltage - can be modulated 22 kHz signal. Presence of 22 kHz signal signalizes different state and is used in DiSEqC™ protocol signalization. Amplitude of 22 kHz signal is around 0.5 Vpp (peak to peak). 22 kHz tone presence selects High frequency band and no tone selects Low frequency band. Satellite selection (satellite A or B) is made also according 22 kHz tone. If 22 kHz tone is transmitted continuously then satellite A is selected. If 22 kHz tone is transmitted in burst sequence then satellite B is selected (duration of this selection is 12.5 ms). Figure 19. Timing diagram for Tone Burst control signal @4ONE"URST3ATELLITE! @$ATA"URST3ATELLITE" MS !) DocID018831 Rev 5 39/44 43 DiSEqC™ protocol basics A.1.3 STM8SPLNB1 Data transfer on coaxial cable The 22 kHz signal is also used for data communication through coaxial cable (bidirectional transfer). In this case is used amplitude modulation of 22 kHz signal. Bit “logical 0” coding: 1.0 ms 22 kHz signal 0.5 ms no signal Bit “logical 0” coding: 0.5 ms 22 kHz signal 1.0 ms no signal By this modulation is transferred full DiSEqC™ message (8 bits per byte + parity, several bytes in message - see A.1: Physical layer). Figure 20. DiSEqC™ bit modulation @$ATABIT MS @$ATABIT MS MS MS !) Figure 21. Timing diagram for typical DiSEqC™ (1.0 version) %NDOF #ONTINUOUS4ONE IFPRESENT #HANGEOF6OLTAGE3IGNALLING IFREQUIRED 3!3" 4ONE"URST &ULL$)3%Q#-ESSAGE MS 4YPICALLYMS MS MS 3TARTOF #ONTINUOUS4ONE IFREQUIRED MS !) 40/44 DocID018831 Rev 5 STM8SPLNB1 DiSEqC™ protocol basics For more detailed information about DiSEqC™ protocol - see DiSEqC™ bus functional specifications and DiSEqC™ slave microcontroller specifications. Refer to www.eutelsat.com. A.2 Protocol layer The DiSEqC™ messages are transferred in packets. One packet consists from several bytes - each byte has 8 bits followed by parity bit (odd). The full DiSEqC™ message contains a frame byte, an address byte, a command byte which can be followed by several data bytes. Figure 22. DiSEqC™ message format &RAME !DDRESS #OMMAND $ATA $ATA !) When host is requesting an answer from the slave (microcontroller) then the answer consists from frame byte which can be followed by several data bytes Figure 23. Microcontroller answer format. &RAME $ATA $ATA !) The frame byte identifies the direction, reply requirements and error status - see following Table 35. Table 35. DiSEqC™ frame byte definition Frame byte definition 0xE0 Command from master, no reply required, first transmission 0xE1 Command from master, no reply required, repeated transmission 0xE2 Command from master, reply required, first transmission 0xE3 Command from master, reply required, repeated transmission 0xE4 Reply from slave, OK, no errors found 0xE5 Reply from slave, command not supported 0xE6 Reply from slave, parity error, repeat requested 0xE7 Reply from slave, command not recognized, repeat necessary The address byte identifies the receiver. There also exist address groups (families). The family address is valid for all devices with similar (family) function - all given family devices receive message. Address families are described in DiSEqC™ slave microcontroller specifications. Universal (broadcast) address is 0x00 - all devices should receive messages with this address. Command byte describes given command for device - according this command the device selects method for data processing. DocID018831 Rev 5 41/44 43 DiSEqC™ protocol basics STM8SPLNB1 Optional data bytes are data for given command. Data in answer (from slave) specify required information. There is specified data byte format only for 3 required bytes from slave: Status byte (bus collision, reset status, standby status, supply voltage) Configuration byte (more detailed information about current slave configuration) Switches byte (describes status of the committed switches) For more information about format of those 3 data bytes refer to DiSEqC™ slave microcontroller specifications available at www.eutelsat.com (and Table 4: STM8SPLNB1 DiSEqC™ supported commands). 42/44 DocID018831 Rev 5 STM8SPLNB1 7 Revision history Revision history Table 36. Document revision history Date Revision 28-Jul-2011 1 Initial release. 08-Sep-2011 2 Updated RESET capacitor value in Figure 2: STM8SPLNB1 typical configuration. Updated AppliNum and SaTCRs number parameters. Added note on VCAP parameter in Table 22: General operating conditions. 03-Nov-2011 3 Updated datasheet description. Updated conditions and notes related to VCAP parameter in Table 22: General operating conditions. 4 Updated typical and maximum values of RPU in Table 26: RESET pin characteristics. Modified Figure 16: 20-lead, ultra thin, fine pitch quad flat no-lead package outline (3 x 3) to add package top view. 5 Updated: – Section 5.2.1: TSSOP package mechanical data, – Section 5.2.2: SO20W package mechanical data, – Section 5.2.3: UFQFPN package mechanical data. 11-Jun-2012 18-Dec-2014 Changes DocID018831 Rev 5 43/44 43 STM8SPLNB1 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 44/44 DocID018831 Rev 5 ">
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