STMicroelectronics Wide bandwidth and bipolar inputs single operational amplifier Datasheet
विज्ञापन
विज्ञापन
TSH150
WIDE BANDWIDTH AND BIPOLAR INPUTS
SINGLE OPERATIONAL AMPLIFIER
■ LOW DISTORTION
■ GAIN BANDWIDTH PRODUCT : 150MHz
■ UNITY GAIN STABLE
■ SLEW RATE : 190V/
µ s
■ VERY FAST SETTLING TIME : 20ns (0.1%)
DESCRIPTION
The TSH150 is a wideband monolithic operational amplifier, internally compensated for unity-gain stability.
Low noise and low distortion, wide bandwidth and high linearity make this amplifier suitable for RF and video applications. Short circuit protection is provided by an internal current-limiting circuit.
The TSH150 has internal electrostatic discharge
(ESD) protection circuits and fulfills
MILSTD883C-Class2.
ORDER CODE
Part Number
TSH150I
Temperature Range
-40°C, +125°C
Package
D
•
D = Small Outline Package (SO) - also available in Tape & Reel (DT)
D
SO8
(Plastic Micropackage)
PIN CONNECTIONS (top view)
Offset Null 1
Inverting Input
Non-inverting Input
V
CC
3
4
1
2
8
7
6
Offset Null 2
V
CC
+
Output
5 N.C.
Obsolete Product(s) - Obsolete Product(s)
October 2000 1/6
TSH150
SCHEMATIC DIAGRAM
7 V
CC
+ non inverting input
3
2 inverting input
Internal
V ref
Offset N1
1
C c
8
Offset N2
4
V
CC
-
6 output
INPUT OFFSET VOLTAGE NULL CIRCUIT
TSH150
N1 N 2
V
CC
100k
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
V id
V i
Supply Voltage
Differential Input Voltage
Input Voltage
±7
±5
±5
Current On Inputs ±50
I in
T oper
Current On Offset Null Pins
Operating Free-Air Temperature range
±20
Obsolete Product(s) - Obsolete Product(s)
T stg
Storage Temperature Range -65 to +150 °C Obsolete Product(s) - Obsolete Product(s)
OPERATING CONDITIONS
V
°C
V
V
V
Symbol
V
V
CC ic
Parameter
Supply Voltage
Common Mode Input Voltage Range
Value
±3 to ±6
V
CC
-
+2 to V
CC
+
-1
Unit
V
V
2/6
TSH150
ELECTRICAL CHARACTERISTICS
V
CC
= ±5V, T amb
= 25°C (unless otherwise specified)
Symbol Parameter Min.
Typ.
Max.
Unit
V io
DV
I
I
I ib io io
CC
Avd
Input Offset Voltage
T min
.
≤
T amb
≤
T max
Input Offset Voltage Drift
T min
.
≤
T amb
≤
T max.
Input Bias Current
.
Input Offset Current
.
Supply Current, no load
V
CC
= ±5V
V
CC
= ±3V
V
CC
= ±6V
V
CC
= ±5V T min
.
≤
T amb
≤
T max
Large Signal Voltage Gain Vo = ±2.5V
R
L
R
R
L
L
=
∝
= 100
Ω
= 50
Ω
V icm
Input Common Mode Voltage Range
CMR Common-mode Rejection Ratio V ic
= V icm min.
SVR Supply Voltage Rejection Ratio V
CC
= ±5V to ±3V
Output Voltage
R
L
= 100
Ω
800
300
200
-3 to +4
60
50
0.3
10
5
0.1
23
21
25
1300
850
650
-3.5 to +4.5
100
70
5
7
30
2
30
28
40
32 mV
µ
V/°C
µ
A
µ
A mA
V/V
V dB dB
V o
R
L
= 50
Ω
±3
±2.8
+3.5
-3.7
+3.3
-3.5
V
T min
.
≤
T amb
≤
T max
R
L
R
L
= 100
Ω
= 50
Ω
±2.9
±2.7
I o
GBP
SR e n
Output Short Circuit Current Vid = ±1V, Vo = 0V
Gain Bandwidth Product
A
VCL
= 100, R
L
= 100
Ω
, C
L
= 15pF, f = 7.5MHz
Slew Rate V in
= ±2V, A
VCL
= 1, R
L
= 100
Ω,
C
L
= 15pF
Equivalent Input Voltage Noise
R s
= 50
Ω
f o
= 1kHz
f o
= 1k0Hz
f o
= 100kHz
f o
= 1MHz
Overshoot V in
= ±2V, A
VCL
= 1, R
L
= 100
Ω,
C
L
= 15pF
±50
100
±100
150
190
7
6.5
6.2
5.5
5 mA
MHz
V/
µ s nV/
√
Hz
% K ov t s
Settling Time 0.1%
1)
V in
= ±1V, A
VCL
= -1 20 Obsolete Product(s) - Obsolete Product(s) ns t r
, t f Obsolete Product(s) - Obsolete Product(s) t d
Rise and Fall Time (see note 1)
Delay Time (see note 1)
VCL
= 2 2.5
ns ns
V in
= ±100mV, A
Phase Margin A
VM
= 1, R
L
= 100
Ω
, C
L
= 15pF
φ m 50 Degrees
THD
FPB
Total Harmonic Distortion
A
VCL
= 10, f = 1kHz, V o
= ±2.5V, no load
Full Power Bandwidth
Vo = 5Vpp, R
L
2)
= 100
Ω
Vo = 2Vpp, R
L
= 100
Ω
1. See test waveform figure
2. Full power bandwidth =
--------------------
Vopp
0.02
12
30
%
MHz
3/6
TSH150
TEST WAVEFORM
V in t s
90%
50% t d t r 10%
0.1% of edge amplitude
EVALUATION CIRCUIT
Input
50
Ω
1k
Ω
+5V
10
µ
F
10nF
10nF
-5V
10
µ
F
1k
Ω
C
F
50
Ω
Output
PRINTED CIRCUIT LAYOUT
As for any high frequency device, a few rules must be observed when designing the PCB to get the best performances from this high speed op amp.
From the most to the least important points :
❑ Each power supply lead has to be bypassed to ground with a 10nF ceramic capacitor very close to the device and a 10
µ
F tantalum capacitor.
❑ To provide low inductance and low resistance common return, use a ground plane or common point return for power and signal.
❑ All leads must be wide and as short as possible especially for op amp inputs. This is in order to decrease parasitic capacitance and inductance.
❑ Use small resistor values to decrease time constant with parasitic capacitance.
❑ Choose component sizes as small as possible (SMD).
❑ On output, decrease capacitor load so as to avoid circuit stability being degraded which may cause oscillation. You can also add a serial resistor in order to minimise its influence.
❑ One can add in parallel with feedback resistor a few pF ceramic capacitor C
F ed to optimize the settling time.
adjust-
Obsolete Product(s) - Obsolete Product(s)
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TSH150
MACROMODEL
Applies to: TSH150I
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVEPOWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TSH150 1 3 2 4 5 (analog)
********************************************************
.MODEL MDTH D IS=1E-8 KF=1.568191E-15
CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 1.040000E+02
RIN 15 16 1.040000E+02
RIS 11 15 3.264539E+02
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC -9.162265E-05
VOFN 13 14 DC 0
IPOL 13 5 1.000000E-03
CPS 11 15 5.757255E-12
DINN 17 13 MDTH 400E-12
VIN 17 5 1.5000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 0.500000E+00
FCP 4 5 VOFP 2.200000E+01
FCN 5 4 VOFN 2.200000E+01
FIBP 2 5 VOFP 1.000000E-02
FIBN 5 1 VOFN 1.000000E-02
* AMPLIFYING STAGE
FIP 5 19 VOFP 4.370000E+02
FIN 5 19 VOFN 4.370000E+02
RG1 19 5 1.124121E+03
RG2 19 4 1.124121E+03
CC 19 29 2.000000E-09
HZTP 30 29 VOFP 5.574976E+01
HZTN 5 30 VOFN 5.574976E+01
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 5.000000E+02
VIPM 28 4 5.000000E+01
HONM 21 27 VOUT 5.000000E+02
VINM 5 27 5.000000E+01
EOUT 26 23 19 5 1
VOUT 23 5 0
ROUT 26 3 2.180423E+01
COUT 3 5 1.000000E-12
DOP 19 25 MDTH 400E-12
VOP 4 25 1.511965E+00
DON 24 19 MDTH 400E-12
VON 24 5 1.511965E+00
.ENDS
ELECTRICAL CHARACTERISTICS
V
CC
= ±5V, T amb
= 25°C (unless otherwise specificed)
Symbol Conditions Value Unit
V io
0 mV
Obsolete Product(s) - Obsolete Product(s)
I
CC
V icm
No load Obsolete Product(s) - Obsolete Product(s)
R
21
-3.5 to 4.5
+3.6
mA
V V
OH L
= 100
Ω
R
L
= 100
Ω
V
OL
-3.6
V
I sink
V o
= 0V
I source
V o
= 0V
GBP R
L
= 100
Ω
, C
L
= 15pF
SR R
L
= 100
Ω
, C
L
= 15pF
φ m R
L
= 100
Ω
, C
L
= 15pF t s
A v
= -1 at 0.1%
108
108
147
180
42
22.6
mA mA
MHz
V/
µ s
Degrees ns
5/6
TSH150
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC MICROPACKAGE (SO)
Millimeters Inches
Dim.
Min.
Typ.
Max.
Min.
Typ.
Max.
C c1
D
E e
A a1 a2 a3 b b1
0.1
0.65
0.35
0.19
0.25
4.8
5.8
1.75
0.25
1.65
0.85
0.48
0.25
0.5
5.0
6.2
45° (typ.)
0.004
0.026
0.014
0.007
0.010
0.189
0.228
0.069
0.010
0.065
0.033
0.019
0.010
0.020
0.197
0.244
1.27
0.050
e3 3.81
0.150
F
L
3.8
0.4
4.0
1.27
0.150
0.016
0.157
0.050
S
0.6
8° (max.)
0.024
M Obsolete Product(s) - Obsolete Product(s)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2000 STMicroelectronics - Printed in Italy - All Rights Reserved
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