DB-915-12W
12W / 12V / 875-915 MHz PA using 1x PD55015S
The LdmoST FAMILY
General Features
■
■
■
■
■
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 12W WITH 12 dB GAIN OVER 815 -
915 MHz
10:1 LOAD VSWR CAPABILITY
BeO FREE AMPLIFIER
Description
The DB-915-12W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed as booster for GSM-R applications.
The DB-915-12W is designed in cooperation with
Européenne de Télécommunications S.A
(www.etsa.fr), for high gain and broadband performance operating in common source mode at 12 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than
30 dBc.
Order Code
■ DB-915-12W
Mechanical Specification:
L=60 mm, W=30 mm, H=10mm
Obsolete Product(s) - Obsolete Product(s)
November 2005
Rev 1
1/9 www.st.com
9
3
4
Contents
1
2
5
DB-915-12W
Electrical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Table 1.
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Table 2.
Electrical Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Typical Perfomance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 3.
Test Circuit Component Part List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
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DB-915-12W
Table 1.
Absolute Maximum Ratings
Symbol
(T
CASE
= 25 ° C)
Parameter
V
DD
I
D
P
DISS
T
CASE
P amb
Supply voltage
Drain Current
Power Dissipation
Operating Case Temperature
Max. Ambient Temperature
1 Electrical Data
Value
18
4.5
67
-20 to +85
+55
Unit
V
A
W o
C o
C
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2 Electrical Characteristics DB-915-12W
(T amb
= +25 o
C, Vdd = 26 V, Idq = 150 mA)
Table 2.
Electrical Specification
Symbol Test Conditions
FREQ.
Gain
Frequency Range
P
OUT
= 12 W
P
1dB
Over frequency range: 875 - 915 MHz
Flatness Over frequency range and @ P
OUT
= 12 W
Flatness P
OUT
from 0.1 W to 60 W
ND at P
1dB
IRTL
P
1dB
Input return Loss P
OUT
from 0.1 W to 12 W
Harmonic P
OUT
= 12 W
VSWR Load Mismatch all phases @ P
OUT
= 12 W
Spurious 10:1 VSWR all phases and P
OUT
from 0.1 to 12 W
IMD
3
P
OUT
= 12 WPEP
Min. Typ.
Max.
875
11 12
915
12
+/- 0.5
1
45 50
-6
-30
10:1
-76
-25
Unit
MHz dB
W dB dB
% dB dBc dBc dBc
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3 Typical Perfomance DB-915-12W
Figure 1.
Power Gain vs. Frequency
16
15
14
13
12
11
10
9
8
865
Vc c = 12.5 V
Idq = 150 m A
875 885 895 f (MHz )
905
P in = 25 dB m
P in = 28 dB m
Pin = 31 dBm
915 925
Figure 3.
Drain Current vs. Frequency
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
865
Pin = 31 dBm
P in = 28 dB m
Pin = 25 dBm
875 885 895 f (MHz )
905
Vc c = 12.5 V
Idq = 150 m A
915 925
Figure 5.
Output Power vs. Frequency
Figure 2.
Output Power vs. Frequency
24
22
20
18
16
14
12
10
8
6
4
2
865
Pin = 31 dB m
P in = 28 dB m
875
P in = 25 dB m
885 895 f (MHz )
905
Vc c = 12.5 V
Idq = 150 m A
915 925
Figure 4.
Input Return Loss vs. Frequency
-8
-10
-12
-14
-16
865
-4
-6
0
-2
Pin = 31 dB m
P in = 25 dB m
875
P in = 28 dB m
885 895 f (MHz )
905
Vcc = 12.5 V
Idq = 150 m A
915 925
18
16
14
Vdd = 15.6 V
Vdd = 12.5 V
12 Obsolete Product(s) - Obsolete Product(s)
8
Vdd = 10.8 V
6
4
2
865 875 885 895 f (MHz )
905
P in = 28 dBm
Idq = 150 m A
915 925
5/9
4 Test Circuit
Figure 6.
Test Fixture Component Layout
DB-915-12W
Figure 7.
Test Circuit Photomaster
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DB-915-12W
Table 3.
Test Circuit Component Part List
Ref.
Value Ref. Manufacturer
1
C6, C8
RF Power Amplifier
Circuit
CV1, CV2
C4
C10
C12
Trim capacitor HQ
0.6-4.5pF 500V
Chip Capacitor HQ
0603 100pF TA 5%
50V
Chip Capacitor HQ
5.6pF TB +/- 0,25pF
500V
Chip Capacitor HQ
4.7pF TB +/- 0,25pF
500V
C5, C7,C9
C13
Chip Capacitor HQ
10pF TB 5% 500V
Chip Capacitor HQ
47pF TB 5% 500V
C3
C2
C1
R1
R2
P1
D1
T1
Chip Capacitor HQ
100pF TB 5% 500V
Capacitor 1206
100nF 63V X7R
10%
Capacitor CMS tantale 1µF 20%
35V
Resistor CMS 4,7K
1206 1/4W 5%
Resistor CMS 10K
1206 1/4W 5%
Trim resistor CMS cermet 3224W 10K
Zener Diode 5.1V
500mW SOD80
RF LDMOS
Transistor 12V 15W
TEFLON-GLASS Er
PCIR501003
AT27273
500-CHA-101-JVLE
501-CHB-3R3-CVLE
501-CHB-8R2-CVLE
501-CHB-100-JVLE
501-CHB-470-JVLE
501-CHB-101-JVLE
VJ1206Y104KXAT/630
293D105X9035B
27597
27605
3224W-103
BZV55C5V1
PD55015S
0.762mm,
COPPER FLANGE
2 mm THICKNESS
MX3-30-C1/10C
4 Test Circuit
Manufacturer
ETSA
TECK
TEKELEC
TEKELEC
TEKELEC
TEKELEC
TEKELEC
TEKELEC
VISHAY
Vishay-Sprague
BOURNS
BOURNS
BOURNS
OMNITECH
STMicroélectronics
METCLAD
7/9
5 Revision History
Date
04-Nov-2005
Revision
1 First Issue.
Description of Changes
DB-915-12W
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DB-915-12W 5 Revision History
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
© 2005 STMicroelectronics - All rights reserved
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