INTEGRATED CIRCUITS

DATA SHEET

TDA8542

2

×

1 W BTL audio amplifier

Product specification

Supersedes data of 1997 Feb 19

File under Integrated Circuits, IC01

1998 Apr 01

Philips Semiconductors

2

×

1 W BTL audio amplifier

Product specification

TDA8542

FEATURES

•

Flexibility in use

•

Few external components

•

Low saturation voltage of output stage

•

Gain can be fixed with external resistors

•

Standby mode controlled by CMOS compatible levels

•

Low standby current

•

No switch-on/switch-off plops

•

High supply voltage ripple rejection

•

Protected against electrostatic discharge

•

Outputs short-circuit safe to ground, V

CC

and across the load

•

Thermally protected.

APPLICATIONS

•

Portable consumer products

•

Personal computers

•

Motor-driver (servo).

GENERAL DESCRIPTION

The TDA8542(T) is a two channel audio power amplifier for an output power of 2

×

1 W with an 8

Ω

load at a 5 V supply. The circuit contains two BTL amplifiers with a complementary PNP-NPN output stage and standby/mute logic. The TDA8542T comes in a 16 pin SO package and the TDA8542 in a 16 pin DIP package.

QUICK REFERENCE DATA

SYMBOL

V

CC

I q

I stb

P o

THD

SVRR

PARAMETER supply voltage quiescent current standby current output power total harmonic distortion supply voltage ripple rejection

CONDITIONS MIN.

TYP.

MAX.

UNIT

2.2

V

CC

= 5 V

THD = 10%; R

L

= 8

Ω

; V

CC

= 5 V 1

P o

= 0.5 W

−

−

−

50

5

15

18

22

−

10

1.2

−

0.15

−

− −

V mA

µ

A

W

% dB

ORDERING INFORMATION

TYPE

NUMBER

TDA8542T

TDA8542

PACKAGE

NAME DESCRIPTION

SO16L plastic small outline package; 16 leads; body width 7.5 mm

DIP16 plastic dual in-line package; 16 leads (300 mil); long body

VERSION

SOT162-1

SOT38-1

1998 Apr 01 2

Philips Semiconductors

2

×

1 W BTL audio amplifier

BLOCK DIAGRAM handbook, full pagewidth

INL

−

INL

+

14

13

INR

−

INR

+

11

12

SVR

4

MODE

BTL/SE

3

5

VCCL VCCR

16 9

−

−

+

VCCL

20 k

Ω

R

R

−

−

+

20 k

Ω

STANDBY/MUTE LOGIC

15

OUTL

−

2

OUTL

+

−

−

+

VCCR

20 k

Ω

TDA8542

10

OUTR

−

R

R

−

−

+

7

OUTR

+

20 k

Ω

STANDBY/MUTE LOGIC

1 8

LGND RGND

MGB975

Product specification

TDA8542

1998 Apr 01

Fig.1 Block diagram.

3

Philips Semiconductors

2

×

1 W BTL audio amplifier

Product specification

TDA8542

MODE

SVR

BTL/SE n.c.

OUTR+

RGND

V

CCR

OUTR

−

INR

−

INR+

INL+

INL

−

OUTL

−

V

CCL

PINNING

SYMBOL

LGND

OUTL+

PIN DESCRIPTION

1 ground, left channel

2 positive loudspeaker terminal, left channel

3 operating mode select (standby, mute, operating)

4 half supply voltage, decoupling ripple rejection

5 BTL loudspeaker or SE headphone operation

6 not connected

7 positive loudspeaker terminal, right channel

8 ground, right channel

9 supply voltage, right channel

10 negative loudspeaker terminal, right channel

11 negative input, right channel

12 positive input, right channel

13 positive input, left channel

14 negative input, left channel

15 negative loudspeaker terminal, left channel

16 supply voltage, left channel handbook, halfpage

LGND

OUTL

+

MODE 3

1

2

SVR

BTL/SE

4

5 n.c.

OUTR

+

RGND

6

7

8

TDA8542

16

15

VCCL

OUTL

−

14 INL

−

13 INL

+

12 INR

+

11 INR

−

10 OUTR

−

9 VCCR

MGB974

FUNCTIONAL DESCRIPTION

The TDA8542(T) is a 2

×

1 W BTL audio power amplifier capable of delivering 2

×

1 W output power to an 8

Ω

load at THD = 10% using a 5 V power supply. Using the MODE pin the device can be switched to standby and mute condition. The device is protected by an internal thermal shutdown protection mechanism. The gain can be set within a range from 6 dB to 30 dB by external feedback resistors.

Power amplifier

The power amplifier is a Bridge Tied Load (BTL) amplifier with a complementary PNP-NPN output stage.

The voltage loss on the positive supply line is the saturation voltage of a PNP power transistor, on the negative side the saturation voltage of a NPN power transistor. The total voltage loss is <1 V and with a 5 V supply voltage and an 8

Ω

loudspeaker an output power of

1 W can be delivered.

Mode select pin

The device is in the standby mode (with a very low current consumption) if the voltage at the MODE pin is

>(V

CC

−

0.5 V), or if this pin is floating. At a MODE voltage level of less than 0.5 V the amplifier is fully operational.

In the range between 1.5 V and V

CC

−

1.5 V the amplifier is in mute condition. The mute condition is useful to suppress plop noise at the output caused by charging of the input capacitor.

Headphone connection

A headphone can be connected to the amplifier using two coupling capacitors for each channel. The common

GND pin of the headphone is connected to the ground of the amplifier (see Fig.13). In this case the BTL/SE pin must be either on a logic HIGH level or not connected at all.

The two coupling capacitors can be omitted if it is allowed to connect the common GND pin of the headphone jack not to ground, but to a voltage level of 1

⁄

2

V

CC

(see Fig.13).

In this case the BTL/SE pin must be either on a logic LOW level or connected to ground. If the BTL/SE pin is on a

LOW level, the power amplifier for the positive loudspeaker terminal is always in mute condition.

Fig.2 Pin configuration.

1998 Apr 01 4

Philips Semiconductors

2

×

1 W BTL audio amplifier

Product specification

TDA8542

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

V

CC

V

I

I

ORM

T stg

T amb

V psc

P tot

PARAMETER supply voltage input voltage repetitive peak output current storage temperature operating ambient temperature

AC and DC short-circuit safe voltage total power dissipation

CONDITIONS operating non-operating

SO16L

DIP16

MIN.

−

−

−

0.3

−

0.3

−

−

55

−

40

−

MAX.

+18 V

V

CC

+ 0.3

V

1

+150

+85

A

°

C

°

C

10

1.2

2.2

V

W

W

UNIT

QUALITY SPECIFICATION

In accordance with “SNW-FQ-611-E”. The number of the quality specification can be found in the “Quality Reference

Handbook”. The handbook can be ordered using the code 9397 750 00192.

THERMAL CHARACTERISTICS

SYMBOL

R th j-a

PARAMETER thermal resistance from junction to ambient in free air:

TDA8542T (SO16L)

TDA8542 (DIP16)

VALUE

100

55

UNIT

K/W

K/W

1998 Apr 01 5

Philips Semiconductors

2

×

1 W BTL audio amplifier

Product specification

TDA8542

DC CHARACTERISTICS

V

CC

= 5 V; T amb

= 25

°

C; R

L

= 8

Ω

; V

MODE

= 0 V; measured in test circuit Fig.3; unless otherwise specified.

I

I

V

CC

I q

I stb

V

BS

BS

SYMBOL

MODE

PARAMETER supply voltage quiescent current standby current

I

V

O



V

OUT+

DC output voltage

−

V

OUT

−

 differential output voltage offset

IN+

, I

IN

−

V

MODE input bias current input voltage mode select input current mode select input voltage BTL/SE pin input current BTL/SE pin

CONDITIONS operating

R

L

=

∞

; note 1

V

MODE

= V

CC note 2 operating mute standby

0 < V

MODE

< V

CC single-ended

BTL

V

BS

= 0

MIN.

2.2

−

−

5

15

−

−

−

−

2

−

0

1.5

V

CC

−

0

2.2

−

0.5

−

−

−

−

−

−

−

−

−

TYP.

MAX.

UNIT

18

22

10

−

50

500 nA

0.5

V

V

CC

−

1.5 V

V

CC

20

V

µ

A

0.6

V

CC

100

V

V

µ

A

V mA

µ

A

V mV

Notes

1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal to the DC output offset voltage divided by R

L

.

2. The DC output voltage with respect to ground is approximately 0.5

×

V

CC

.

1998 Apr 01 6

Philips Semiconductors

2

×

1 W BTL audio amplifier

Product specification

TDA8542

AC CHARACTERISTICS

V

CC

= 5 V; T amb

= 25

°

C; R

L

= 8

Ω

; f = 1 kHz; V

MODE

= 0 V; measured in test circuit Fig.3; unless otherwise specified.

SYMBOL

P o

THD

G v

Z i

V no

SVRR

V

α o cs

PARAMETER output power

CONDITIONS

THD = 10%

THD = 0.5% total harmonic distortion closed loop voltage gain differential input impedance noise output voltage supply voltage ripple rejection

P o

= 0.5 W note 1 note 4 output voltage in mute condition note 5 channel separation note 2 note 3

MIN.

6

−

−

50

40

−

40

1

0.6

−

TYP.

1.2

0.9

0.15

−

100

−

−

−

−

−

30

−

100

−

−

200

−

−

−

MAX.

0.3

UNIT

W

W

% dB k

Ω

µ

V dB dB

µ

V dB

Notes

1. Gain of the amplifier is 2

×

R2/R1 in test circuit of Fig.3.

2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a source impedance of R

S

= 0

Ω

at the input.

3. Supply voltage ripple rejection is measured at the output, with a source impedance of R

S

= 0

Ω

at the input.

The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.

4. Supply voltage ripple rejection is measured at the output, with a source impedance of R

S

= 0

Ω

at the input.

The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS), which is applied to the positive supply rail.

5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 kHz, so including noise.

1998 Apr 01 7

Philips Semiconductors

2

×

1 W BTL audio amplifier

Product specification

TDA8542

TEST AND APPLICATION INFORMATION

Test conditions

Because the application can be either Bridge-Tied Load

(BTL) or Single-Ended (SE), the curves of each application are shown separately.

The thermal resistance = 55 K/W for the DIP16; the maximum sine wave power dissipation for T amb

= 25

°

C is:

150 –

55

25

= 2.3 W

For T amb

= 60

°

C the maximum total power dissipation is:

150 –

55

60

= 1.7 W

BTL application

T amb

= 25

°

C if not specially mentioned, V

CC f = 1 kHz, R

L

= 8

Ω

, G v

= 5 V,

= 20 dB, audio band-pass

22 Hz to 22 kHz.

The BTL application diagram is illustrated in Fig.3.

The quiescent current has been measured without any load impedance. The total harmonic distortion as a function of frequency was measured with a low-pass filter of 80 kHz. The value of capacitor C3 influences the behaviour of the SVRR at low frequencies, increasing the value of C3 increases the performance of the SVRR.

The figure of the mode select voltage (V ms

) as a function of the supply voltage shows three areas; operating, mute and standby. It shows, that the DC-switching levels of the mute and standby respectively depends on the supply voltage level.

SE application

T amb

= 25

°

C if not specially mentioned, V

CC f = 1 kHz, R

L

= 4

Ω

, G v

= 7.5 V,

= 20 dB, audio band-pass

22 Hz to 22 kHz.

The SE application diagram is illustrated in Fig.14.

If the BTL/SE pin (pin 5) is connected to ground, the positive outputs (pins 2 and 7) will be in mute condition with a DC level of 1

⁄

(R

L

2

V

CC

. When a headphone is used

≥

25

Ω)

the SE headphone application can be used without output coupling capacitors; load between negative output and one of the positive outputs (e.g. pin 2) as common pin.

Increasing the value of electrolytic capacitor C3 will result in a better channel separation. Because the positive output is not designed for high output current (2

×

I o

) at low load impedance (

≤

16

Ω

), the SE application with output capacitors connected to ground is advised. The capacitor value of C4/C5 in combination with the load impedance determines the low frequency behaviour. The THD as a function of frequency was measured using a low-pass filter of 80 kHz. The value of capacitor C3 influences the behaviour of the SVRR at low frequencies, increasing the value of C3 increases the performance of the SVRR.

General remark

The frequency characteristic can be adapted by connecting a small capacitor across the feedback resistor.

To improve the immunity of HF radiation in radio circuit applications, a small capacitor can be connected in parallel with the feedback resistor (56 k

Ω

); this creates a low-pass filter.

1998 Apr 01 8

Philips Semiconductors

2

×

1 W BTL audio amplifier

BTL APPLICATION handbook, full pagewidth

Gain left = 2

×

R1

Gain right = 2

×

R3

1

µ

F

R1

R2

ViL

10 k

Ω

50 k

C3

47

µ

F

Ω

1

µ

F

R3

R4

ViR

10 k

Ω

INL

INL

−

+

14

13

OUTR

−

50 k

Ω

INR

−

INR

+

11

12

SVR

4

MODE

3

BTL/SE

5

16

TDA8542

1

9

8

15

OUTL

−

2

OUTL

+

10

OUTR

−

7

OUTR

+

100 nF

RL

RL

GND

MBH798

Fig.3 BTL application.

VCC

100

µ

F

Product specification

TDA8542

10 handbook, halfpage

THD

(%)

1

MGD891

30 handbook, halfpage

Iq

(mA)

20

MGD890

(1) (2)

10

10

− 1

RI =

∞

.

0

0 4 8 12 16

VCC (V)

20

1998 Apr 01

Fig.4 I q

as a function of V

CC

.

9

10

− 2

10

− 2

10

− 1

1

Po (W)

10 f = 1 kHz, G v

= 20 dB.

(1) V

(2) V

CC

CC

= 5 V, R

= 9 V, R

L

L

= 8

Ω

.

= 16

Ω

.

Fig.5 THD as a function of P o

.

Philips Semiconductors

2

×

1 W BTL audio amplifier

MGD892

10 handbook, halfpage

THD

(%)

1

(1)

(2)

10

−

1

10

−

2

10 10

2

10

3

10

4 f (Hz)

10

5

P o

= 0.5 W, G v

= 20 dB.

(1) V

(2) V

CC

CC

= 5 V, R

= 9 V, R

L

L

= 8

Ω

.

= 16

Ω

.

Fig.6 THD as a function of frequency.

Product specification

TDA8542

MGD893

−

60 handbook, halfpage

α cs

(dB)

−

70

−

80

(1)

(2)

(3)

−

90

−

100

10 10

2

V

CC

= 5 V, V o

= 2 V, R

L

= 8

Ω

.

(1) G v

= 30 dB.

(2) G v

= 20 dB.

(3) G v

= 6 dB.

10

3

10

4 f (Hz)

10

5

Fig.7

Channel separation as a function of frequency.

−

20 handbook, halfpage

SVRR

(dB)

−

40

−

60

(1)

(2)

(3)

MGD894

−

80

10 10

2

V

CC

= 5 V, R s

= 0

Ω

, V r

100 mV.

(1) G v

= 30 dB.

(2) G v

= 20 dB.

(3) G v

= 6 dB.

10

3

10

4 f (Hz)

10

5

Fig.8 SVRR as a function of frequency.

1998 Apr 01 10

(1) (2)

MGD895

2.5

handbook, halfpage

Po

(W)

2

1.5

1

0.5

0

0 4 8

VCC (V)

12

(1) THD = 10%, R

L

(2) THD = 10%, R

L

= 8

Ω

.

= 16

Ω

.

Fig.9 P o

as a function of V

CC

.

Philips Semiconductors

2

×

1 W BTL audio amplifier

Product specification

TDA8542

3 handbook, halfpage

P

(W)

2

MGD896

3 handbook, halfpage

P

(W)

2

(1)

MGD897

(1) (2)

(2)

1 1

0

0 4 8

VCC (V)

12

(1) R

L

(2) R

L

= 8

Ω

.

= 16

Ω

.

Fig.10 Worst case power dissipation as a function of V

CC

.

0

0 0.5

1 1.5

2

Po (W)

2.5

Sine wave of 1 kHz.

(1) V

(2) V

CC

CC

= 9 V, R

= 5 V, R

L

L

= 16

Ω

.

= 8

Ω

.

Fig.11 P dis

as a function of P o

.

(1) (2) (3)

MGD898

10

Vo

(V)

1

10

−

1

10

−

2

10

−

3

10

− 4

10

−

5

10

− 6

10

− 1

1 10

Vms (V)

10

2

Band-pass = 22 Hz to 22 kHz.

(1) V

CC

= 3 V.

(2) V

CC

= 5 V.

(3) V

CC

= 12 V.

Fig.12 V o

as a function of V ms

.

1998 Apr 01 11

16 handbook, halfpage

Vms

(V)

12

8

4

0

0 4

Fig.13 V ms standby mute

8 operating

12

VP (V)

16

as a function of V

P

MGL070

.

Philips Semiconductors

2

×

1 W BTL audio amplifier

SE APPLICATION handbook, full pagewidth

Gain left =

R1

Gain right =

R3

1

µ

F

R1

R2

ViL

10 k

Ω

100 k

C3

47

µ

F

Ω

1

µ

F

R3

R4

ViR

10 k

Ω

INL

INL

−

+

14

13

OUTR

−

100 k

Ω

INR

−

INR

+

11

12

SVR

4

MODE

3

BTL/SE

5

16

TDA8542

1

9

8

15

OUTL

−

2

OUTL

+

10

OUTR

−

7

OUTR

+

100 nF

C4

470

µ

F

C5

470

µ

F

GND

MBH799

VCC

100

µ

F

RL

RL

Fig.14 Single-ended application.

Product specification

TDA8542

MGD900

10 handbook, halfpage

THD

(%)

1

MGD899 10 handbook, halfpage

THD

(%)

1

10

− 1

(1)

(2)

(3)

10

−

2

10

−

2

10

−

1

1

Po (W)

10 f = 1 kHz, G v

(1) V

(2) V

(3) V

CC

CC

CC

= 20 dB.

= 7.5 V, R

= 9 V, R

L

L

= 4

Ω

.

= 8

Ω

.

= 12 V, R

L

= 16

Ω

.

Fig.15 THD as a function of P o

.

1998 Apr 01 12

10

−

1

(1)

(2)

(3)

10

2

10

− 2

10 10

3

10

4 f (Hz)

10

5

P o

= 0.5 W, G v

(1) V

CC

(2) V

CC

(3) V

CC

= 20 dB.

= 7.5 V, R

= 9 V, R

L

L

= 4

Ω

.

= 8

Ω

.

= 12 V, R

L

= 16

Ω

.

Fig.16 THD as a function of frequency.

Philips Semiconductors

2

×

1 W BTL audio amplifier

MGD901

−

20 handbook, halfpage

α cs

(dB)

−

40

−

60

−

80

(1)

(2)

(3)

(4)

(5)

−

100

10 10

2

10

3

V o

= 1 V, G v

(1) V

(2) V

CC

CC

= 20 dB.

= 5 V, R

L

= 7.5 V, R

= 32

Ω

, to buffer.

L

= 4

Ω

.

(3) V

CC

= 9 V, R

L

= 8

Ω

.

(4) V

CC

= 12 V, R

L

= 16

Ω.

(5) V

CC

= 5 V, R

L

= 32

Ω

.

10

4 f (Hz)

10

5

Fig.17 Channel separation as a function of frequency.

Product specification

TDA8542

MGD902

−

20

SVRR

(dB)

−

40

(1)

(2)

−

60

(3)

−

80

10 10

2

10

3

10

4 f (Hz)

10

5

V

CC

= 7.5 V, R

L

= 4

Ω

,R s

= 0

Ω

, V r

= 100 mV.

(1) G v

= 24 dB.

(2) G v

= 20 dB.

(3) G v

= 0 dB.

Fig.18 SVRR as a function of frequency.

MGD903

2 handbook, halfpage

Po

(W)

1.6

(1) (2) (3)

1.2

0.8

0.4

0

0 4 8 12

VCC (V)

16

THD = 10%.

(1) R

L

(2) R

L

(3) R

L

= 4

Ω

.

= 8

Ω

.

= 16

Ω

.

Fig.19 P o

as a function of V

CC

.

1998 Apr 01 13

P

(W)

2

1

(1) (2) (3)

MGD904

0

0

(1) R

L

(2) R

L

(3) R

L

= 4

Ω

.

= 8

Ω

.

= 16

Ω

.

4 8 12

VCC (V)

16

Fig.20 Worst case power dissipation as a function of V

CC

.

Philips Semiconductors

2

×

1 W BTL audio amplifier

MGD905

P

(W)

1.6

(1)

(2)

(3)

0.8

0

0 0.4

0.8

1.2

Po (W)

1.6

Sine wave of 1 kHz.

(1) V

CC

(2) V

CC

(3) V

CC

= 12 V, R

L

= 7.5 V, R

L

= 16

Ω

.

= 4

Ω

.

= 9 V, R

L

= 8

Ω

.

Fig.21 Power dissipation as a function of P o

.

Product specification

TDA8542

1998 Apr 01 14

Philips Semiconductors

2

×

1 W BTL audio amplifier handbook, full pagewidth

1998 Apr 01 a. Top view.

GND

+

VCC

100

µ

F

+

OUT1

−

OUT1

MODE

B/S

12 k

Ω

P3

12 k

Ω

1

100 nF

16

56 k

Ω

11 k

Ω

TDA8542

47

µ

F

11 k

Ω

8 9

56 k

Ω

+

OUT2

1

µ

F

IN1

1

µ

F

−

OUT2

IN2

MBH921 b. Component side.

Fig.22 Printed-circuit board layout (BTL and SE).

15

Product specification

TDA8542

Philips Semiconductors

2

×

1 W BTL audio amplifier

PACKAGE OUTLINES

SO16: plastic small outline package; 16 leads; body width 7.5 mm

Product specification

TDA8542

SOT162-1

D c

E A

X v

M A

16

Z y

9

H

E pin 1 index

A

2

A

1

Q

L

L p detail X

θ

A

1 e b p

8 w M

0 5 scale

10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

UNIT

A max.

A

1

A

2

A

3 b p c D

(1)

E

(1) e H

E mm inches

2.65

0.10

0.30

0.10

0.012

0.004

2.45

2.25

0.096

0.089

0.25

0.01

0.49

0.36

0.019

0.014

0.32

0.23

0.013

0.009

10.5

10.1

0.41

0.40

7.6

7.4

0.30

0.29

1.27

0.050

10.65

10.00

0.419

0.394

L L p

Q

1.4

0.055

1.1

0.4

0.043

0.016

1.1

1.0

0.043

0.039

v

0.25

0.01

w

0.25

0.01

y Z

(1)

0.1

0.004

0.9

0.4

0.035

0.016

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

OUTLINE

VERSION

SOT162-1

IEC

075E03

REFERENCES

JEDEC EIAJ

MS-013AA

EUROPEAN

PROJECTION

ISSUE DATE

95-01-24

97-05-22

θ

8 o

0 o

1998 Apr 01 16

Philips Semiconductors

2

×

1 W BTL audio amplifier

DIP16: plastic dual in-line package; 16 leads (300 mil); long body

Product specification

TDA8542

SOT38-1

L

Z

16 pin 1 index e

D b

M

E

A

1 b

1

9 w M

A

2 A c

M

H

E

1 8

0 5 scale

10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

UNIT

A max.

1 min.

2 max.

b b

1 c D

(1)

E

(1) mm inches

4.7

0.19

0.51

0.020

3.7

0.15

1.40

1.14

0.055

0.045

0.53

0.38

0.021

0.015

0.32

0.23

0.013

0.009

21.8

21.4

0.86

0.84

6.48

6.20

0.26

0.24

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE

VERSION

SOT38-1

IEC

050G09

REFERENCES

JEDEC EIAJ

MO-001AE e

2.54

0.10

e

1

7.62

0.30

L

3.9

3.4

0.15

0.13

M

E

8.25

7.80

0.32

0.31

EUROPEAN

PROJECTION

M

H

9.5

8.3

0.37

0.33

w

0.254

Z

(1) max.

2.2

0.01

0.087

ISSUE DATE

92-10-02

95-01-19

1998 Apr 01 17

Philips Semiconductors

2

×

1 W BTL audio amplifier

Product specification

TDA8542

SOLDERING

Introduction

There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011).

DIP

S OLDERING BY DIPPING OR BY WAVE

The maximum permissible temperature of the solder is

260

°

C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed

5 seconds.

The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T stg max

). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.

Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from

215 to 250

°

C.

Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at

45

°

C.

W AVE SOLDERING

Wave soldering techniques can be used for all SO packages if the following conditions are observed:

•

A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used.

•

The longitudinal axis of the package footprint must be parallel to the solder flow.

•

The package footprint must incorporate solder thieves at the downstream end.

During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.

Maximum permissible solder temperature is 260

°

C, and maximum duration of package immersion in solder is

10 seconds, if cooled to less than 150

°

C within

6 seconds. Typical dwell time is 4 seconds at 250

°

C.

A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.

R EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300

°

C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400

°

C, contact may be up to 5 seconds.

SO

R EFLOW SOLDERING

Reflow soldering techniques are suitable for all SO packages.

Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.

R EPAIRING SOLDERED JOINTS

Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron

(less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300

°

C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between

270 and 320

°

C.

1998 Apr 01 18

Philips Semiconductors

2

×

1 W BTL audio amplifier

Product specification

TDA8542

DEFINITIONS

Data sheet status

Objective specification

Preliminary specification

Product specification

This data sheet contains target or goal specifications for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1998 Apr 01 19

Philips Semiconductors – a worldwide company

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Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

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Tel. +91 22 493 8541, Fax. +91 22 493 0966

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Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

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TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

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20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

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Tel. +9-5 800 234 7381

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Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

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Tel. +64 9 849 4160, Fax. +64 9 849 7811

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Tel. +47 22 74 8000, Fax. +47 22 74 8341

Pakistan: see Singapore

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

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Tel. +48 22 612 2831, Fax. +48 22 612 2327

Portugal: see Spain

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Tel. +7 095 755 6918, Fax. +7 095 755 6919

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Tel. +65 350 2538, Fax. +65 251 6500

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Slovenia: see Italy

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2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,

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Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

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Tel. +41 1 488 2741 Fax. +41 1 488 3263

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TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874

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Tel. +66 2 745 4090, Fax. +66 2 398 0793

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Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +1 800 234 7381

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 625 344, Fax.+381 11 635 777

For all other countries apply to: Philips Semiconductors,

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,

5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

Internet: http://www.semiconductors.philips.com

© Philips Electronics N.V. 1998 SCA59

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

545102/00/05/pp20 Date of release: 1998 Apr 01 Document order number: 9397 750 03353