NXP NX30P0121UK High-voltage back-to-back OVP switch Data Sheet

NX30P0121UK
High-voltage back-to-back OVP switch
Rev. 1.0 — 19 June 2019
1
Product data sheet
General description
The NX30P0121UK is an advanced 3A unidirectional power switch. It includes
Undervoltage Lockout (UVLO), Overvoltage Lockout (OVLO) in VOUT, OVLO adjustable
pin and over-temperature protection circuits. It is designed to automatically isolate the
power switch terminals when a fault condition occurs. Both VIN and VOUT pins have 29V
tolerance in shutdown mode.
The device has a default internal 14.5V overvoltage protection threshold in VOUT and
adjustable OVP threshold by resistor divider from VOUT. ISNS pin is current source
output proportional to input current from VIN to VOUT when device is enabled.
The device is enabled by external EN pin. When EN pin is driven LOW, the device is in
shutdown mode where all internal circuitries are off and OVP switch is off. When EN pin
is driven HIGH and VIN is valid, the OVP switch soft starts after VIN debounce time to
limit the inrush current.
NX30P0121UK is offered in a small 12 bumps, 1.65 x 1.25 x 0.525 mm WLCSP package.
2
Features and benefits
•
•
•
•
•
•
•
•
Wide supply voltage range from 2.5V to 20V
Switch maximum 3A continuous current
29V tolerance on both VIN and VOUT pin
54mΩ (typical) Low ON resistance
Adjustable overvoltage protection threshold, internal 14.5V VOUT OVLO
Built in slew rate control for inrush current limit
ISNS to monitor input current from VIN to VOUT
Protection circuitry
– Over-temperature protection
– Overvoltage protection
– Undervoltage lockout
• ESD protection
– HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
– CDM (JESD22-C101E)
• Specified from -40°C to +85°C
3
Applications
• Smartphone
• Tablet
• Other portable electronic devices
NX30P0121UK
NXP Semiconductors
High-voltage back-to-back OVP switch
4
Ordering information
Table 1. Ordering information
Type number
NX30P0121UK
Topside
marking
Package
Name
Description
Version
N21
WLCSP12
wafer level chip scale package; 12 bumps; 0.4
mm pitch; 1.65 mm x 1.25 mm x 0.525 mm body
(backside coating included)
SOT1390-8
4.1 Ordering options
Table 2. Ordering options
Type number
Orderable part
number
Package
Packing method
Minimum order
quantity
Temperature
NX30P0121UK
NX30P0121UKZ
WLCSP12
REEL 7" Q1 DP
CHIPS
4000
Tamb = -40 °C to +85 °C
5
Functional diagram
VIN
VOUT
ISNS
OVLO
GND
EN
aaa-031747
Figure 1. Logic symbol
NX30P0121
Product data sheet
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NXP Semiconductors
High-voltage back-to-back OVP switch
NX30P0121
VIN
VOUT
UVLO
OVLO
OVLO
ISNS
CONTROL
EN
SoftStart
GND
OTP
1 MΩ
aaa-031748
Figure 2. Internal block diagram
6
Pinning information
6.1 Pinning
Ball A1
mark
Ball A1
mark
1
2
3
3
2
1
A
OVLO
OVL
VIN
VOUT
VOUT
VIN
OVLO
VLO
A
B
EN
VIN
VOUT
VOUT
VIN
EN
B
C
ISNS
VIN
VOUT
VOUT
VIN
ISNS
C
D
GND
VIN
VOUT
VOUT
VIN
GND
D
Pin map; bump-side down
Pin map; bump-side up
aaa-031750
Figure 3. NX30P0121 Pin map, WLCSP12
6.2 Pin description
Table 3.
Pin description
NX30P0121
Product data sheet
Symbol
Pin
Type
Description
VIN
A2, B2, C2,
D2
P
Input power pin. Connect bypass capacitor 1uF to GND
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NXP Semiconductors
High-voltage back-to-back OVP switch
Pin description
7
Symbol
Pin
Type
Description
VOUT
A3, B3, C3,
D3
P
Output Power pin, Connect bypass capacitor 1uF to GND
EN
B1
DIN
Enable pin. Drive HIGH to enable device.
ISNS
C1
AO
1,053:1 current mirror of input current from VIN to VOUT.
Must connect a resistor on ISNS pin to GND to monitor the
input current.
OVLO
A1
AIN
Adjustable OVLO threshold with external Resistor divider
GND
D1
P
Ground
Functional description
Table 4. Function table
EN
VIN
VOUT
Switch
ISNS
Operation
L
X
X
OFF
Hi-Z
Shutdown mode
H
< VINUVLO
X
OFF
Hi-Z
Standby mode, Undervoltage lockout
H
X
> VOUTOVLO
OFF
Hi-Z
Standby mode, Overvoltage lockout
H
> VINUVLO
< VOUTOVLO
ON
ON
Switch ON mode
7.1 EN pin
When EN is driven LOW, the device enters shutdown mode regardless of VIN and VOUT
voltage. All internal circuitries are off to minimize current consumption and OVP switch
is OFF. When EN is driven HIGH, the OVP switch is ready to turn on depending on VIN
and VOUT condition. if VIN is above VINUVLO and VOUT is lower than VOUTOVLO, the
device soft starts after VIN debounce timer is expired, to reduce in-rush current. There is
an internal 1MΩ pull-down resistor in EN pin, which secure EN status in case EN pin is
float. This pin has +29V tolerance.
7.2 Undervoltage Lockout (UVLO)
When EN is driven HIGH and VIN < VINUVLO, the UVLO circuit disables the power
MOSFET. Once VIN exceeds VINUVLO and no other protection circuit is active, the
channel MOSFET state is controlled by the EN pin.
7.3 Overvoltage Lockout (OVLO)
When EN is driven HIGH and VOUT is above VOUTOVLO, the OVLO circuit disables
the power MOSFET within tdis(OVP). Once VOUT drops below VOUTOVLO and no other
protection circuit is active, the power MOSFET resumes operation.
OVLO pin is used to adjust the overvoltage protection threshold. The default overvoltage
threshold is 14.5V when OVLO pin is shorted to GND. Connecting a resistor divider to
the OVLO pin (see Figure 4) adjusts the overvoltage threshold from 4V to 20V using
below equation.
VOUTOVLO = Vth(OVLO) X ( R1 + R2 )/(R2)
NX30P0121
Product data sheet
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NXP Semiconductors
High-voltage back-to-back OVP switch
Where Vth(OVLO) = 1.227V
R1 is recommended to use 1MΩ resistance.
When the voltage on OVLO pin is below 0.1V, the device defaults to the 14.5V OVP
threshold.
VOUT
1 uF
R1
OVLO
OVLO
R2
0.1 V
aaa-031751
Figure 4. External OVLO adjustment
7.4 Over-temperature protection
When EN is HIGH and the device temperature exceeds 145°C the Over-Temperature
Protection (OTP) circuit disables the power MOSFET. Once the device temperature
decreases below 115 °C and no other protection circuit is active, the state of the OVP
MOSFET is controlled by the EN pin again.
7.5 ISNS pin
The ISNS pin is current source output having 1,053:1 ratio with input current from VIN
to VOUT. It requires a resistor from ISNS to GND to monitor input current. When device
is disabled, its output is high impedance. The ISNS voltage is determined by below
equation. RISNS is recommended to be +/-1% tolerant.
VISNS = ( IIN x RISNS ) / 1,053
NX30P0121
Product data sheet
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NXP Semiconductors
High-voltage back-to-back OVP switch
7.6 Timing diagram
VIN
ten
including
5 ms
debounce
time
0V
VIN UVLO
90%
ten
including
5 ms
debounce
time
90%
VOUT
10%
0V
10%
10%
tTLH
EN
tON
tOFF
tON
aaa-031752
Figure 5. Timing diagram at start up
VOUTOVLO
VIN
tdis(OVP)
VINUVLO
0V
ten
VOUTOVLO
VIN
90 %
90 %
VOUT
0V
EN
10 %
tTLH
External power is
driven on VOUT
tON
10 %
10 %
tTLH
tON
tOFF
aaa-031753
Figure 6. Timing diagram when VOUT is driven by external power
8
Application diagram
The NX30P0121UK is typically used to add wireless charger path in single input
switching mode charger application. If wireless charger is used, then NX30P0121UK
bridge wireless charger output to the switching mode charger, protecting wireless charger
from up to 29V which could be from VBUS.
For best performance, it is recommended to keep input and output traces short and wide,
and capacitors as close to the device as possible. Regarding thermal performance, it is
recommended to increase the PCB area around VIN and VOUT pins.
NX30P0121
Product data sheet
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NXP Semiconductors
High-voltage back-to-back OVP switch
VOUT
VIN
Wireless
charger
CIN
NX30P0121
ISNS
ILIM
EN
R3
R1
COUT
OVLO
GND
R2
DC_IN_EN
DC_IN_PSNS
SW Charger
DC_IN_PON
USB
Con
MID_CHG
USB_IN
VBUS
Buck
CHG
aaa-031757
Figure 7. NX30P0121UK application diagram
9
Limiting values
Table 5. Limiting values (absolute maximum ratings)
Symbol
Parameter
VI
Conditions
Min
Max
Unit
Input voltage (with respect VIN
to GND)
VOUT
-0.5
+29
V
-0.5
+29
V
OVLO
-0.5
VOUT
V
EN
-0.5
+29
V
ISNS
-0.5
+6
V
IIK
Input clamping current
EN; VI < -0.5 V
-50
-
mA
ISK
Switch clamping current
VIN, VOUT; VI < -0.5 V
-50
-
mA
ISW
Continuous switch current Tamb = 85 °C
-
+3.0
A
Tamb = 105 °C
-
+3.0
A
130μs pulse, 5% duty cycle at 85 °C
-
+10
A
-65
+150
°C
-
1.45
W
Peak switch current
Tstg
Storage temperature
Ptot
Total power dissipation
Tamb = 25 °C
10 Recommended operating conditions
Table 6. Recommended operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
VI
input voltage (with respect to GND)
VIN
2.5
20
V
VOUT
2.5
20
V
EN
0
20
V
NX30P0121
Product data sheet
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NXP Semiconductors
High-voltage back-to-back OVP switch
Symbol
Parameter
Conditions
Min
Max
Unit
ISNS
0
+6
V
Tj(max)
Maximum junction temperature
-40
+125
°C
Tamb
Ambient temperature
-40
+85
°C
11 Thermal characteristics
Table 7. Thermal characteristics
Symbol
Rth(j-a)
[1]
[2]
Parameter
Conditions
[1] [2]
thermal resistance from junction to ambient
Typ
Unit
70.8
°C/W
Determined in accordance to JEDEC JESD51-2A natural convection environment. Thermal resistance data in this report is solely for a thermal
performance comparison of one package to another in a standardized specified environment. It is not meant to predict the performance of a package in an
application-specific environment
Thermal test board meets JEDEC specification for this package (JESD51-9).
12 Electrical characteristics
12.1 Static characteristics
Table 8. Static characteristics
At recommended input voltages and Tamb = -40°C to +85°C; voltages are referenced to GND (ground = 0 V); unless
otherwise specified.
Symbol
Parameter
Tamb = -40 °C
to +85 °C
Unit
Tamb = 25 °C
Conditions
Min
Typ
Max
Min
Max
EN = 1.8V, VIN = 5V, IO = 0A
-
110
-
-
170
μA
EN = 1.8V, VIN = 14V, IO = 0A
-
140
-
-
220
μA
VIN shutdown
leakage current
EN = 0V, VIN = 5.0V; VOUT = 0V
-
5
-
2
10
μA
VOUT shutdown
Leakage current
EN = 0V, VOUT= 5.0 V, VIN = 0 V
-
1
3
-
5
μA
IOVLO
OVLO input
leakage Current
VOVLO=Vth(OVLO)
-
0.5
-
-
25
nA
RON
ON resistance
VIN = 5.0 V
-
54
66
-
79
mΩ
VIN = 14 V
-
54
66
-
79
mΩ
VINUVLO
VIN UVLO voltage
VIN Rising; EN = 1.8V
2.2
2.37
2.55
2.1
2.6
V
VINhys(UVLO)
VIN UVLO
hysteresis voltage
VIN Falling
-
110
-
-
140
mV
VOUTOVLO
Default overvoltage VOUT Rising; EN = 1.8V
lockout voltage
OVLO short to GND
-
14.5
-
13.5
15.3
V
Iq
ISHDN
VIN quiescent
current
NX30P0121
Product data sheet
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NXP Semiconductors
High-voltage back-to-back OVP switch
Symbol
Parameter
Tamb = -40 °C
to +85 °C
Unit
Tamb = 25 °C
Conditions
VOUT Falling; EN = 1.8V
OVLO short to GND
Min
Typ
Max
Min
Max
-
14.2
-
13.2
15.0
V
1.163
1.227
1.288
1.16
1.3
V
Vth(OVLO)
external OVLO set
threshold voltage
VOUT= 2.5 V to 20 V; EN = 1.8V
VIH
HIGH-level input
voltage
EN pin; VIN = 2.5 V to 20 V
1.2
-
-
1.2
-
V
VIL
LOW-level input
voltage
EN pin; VIN = 2.5 V to 20 V
-
-
0.4
-
0.4
V
Rpd
pull-down
resistance
EN
-
1
-
0.7
1.4
MΩ
CI
input capacitance
EN pin; VIN = 5V
-
2
-
-
-
pF
K
Current sensing
ratio
IIN / IISNS , IIN = 1A, VIN = 5V, EN =1.8V
1050
1010
1090
A/A
VISNS
ISNS voltage
IIN = 2A, RISNS = 400Ω, VIN = 5V, VIN >
3.0V
0.762
V
VISNS
ISNS voltage
IIN = 1A, RISNS = 806Ω, VIN = 5V, VIN >
3.0V
0.767
V
VISNS
ISNS voltage
IIN = 0.5A, RISNS = 806Ω, VIN = 5V, VIN
> 3.0V
0.384
V
Tth(OTP)
Over temperature
EN = 1.8V
shutdown threshold
-
145
-
-
-
°C
Tth(OTP)Hys
Over temperature
shutdown threshold EN = 1.8V
hysteresis
-
30
-
-
-
°C
12.2 Dynamic characteristics
Table 9. Dynamic characteristics
Symbol
ten
tTLH
Parameter
Enable Time
VOUT rise time
Conditions
Min
Typ
Max
Min
Max
3.5
5.5
8.0
3.0
11.0
ms
VIN = 5 V
-
1.8
-
-
-
ms
VIN =14 V
-
3.0
-
-
-
ms
-
70
-
-
-
ns
From EN to VOUT = 10% of VIN; VIN = 5 V;
COUT =10μF; RLoad = 100Ω
includes 2ms VIN debounce time
VOUT from 10% to 90% of VIN;
COUT = 10μF; ROUT = 100Ω
tdis(OVP)
OVP turn off time
From VOUT > VOUTOVLO to VVIN = 80% of
VOUT; Rload_VIN = 100Ω,;CIN = 0uF; VIN =
12V; OVLO pin short to GND
ton
turn-on time
EN to VOUT= 90% of VIN
NX30P0121
Product data sheet
Tamb = -40 °C
to +85 °C
Unit
Tamb = 25 °C
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NXP Semiconductors
High-voltage back-to-back OVP switch
Symbol
Parameter
Tamb = -40 °C
to +85 °C
Unit
Tamb = 25 °C
Conditions
Min
Typ
Max
Min
Max
VIN= 5.0 V
-
7.5
-
5.0
10.0
ms
VIN = 14.0 V
-
9.0
-
-
-
ms
VIN = 5.0 V; COUT = 10μF; ROUT = 100Ω
-
2.6
4.0
-
4.0
ms
VIN = 14 V; COUT = 10μF; ROUT = 100Ω
-
2.6
-
-
-
ms
EN to VOUT = 10% VIN
toff
turn-off time
12.3 Graphs
10
IOUT 9
(uA) 8
7
6
5
4
3
2
1
0
aaa-032267
25
20
15
10
0
5
10
15
20
25
30
VOUT[V]
VIN = 0V
ISNS Accuracy
0
5
10
15
20
25
30
VIN [V]
Figure 9. VIN leakage current (EN = 0V)
aaa-032269
3%
2%
1%
0%
-1%
-2%
-3%
0.0
0.5
1.0
VIN = 5V
1.5
2.0
IIN [A]
VIN = 9V
2.5
3.0
VIN = 12V
Figure 10. ISNS accuracy (RISNS = 806Ω)
Product data sheet
5
VIN = 5V
Figure 8. VOUT leakage current (EN = 0V)
NX30P0121
aaa-032268
40
IIN
(uA)35
30
aaa-032270
Figure 11. Startup (RISNS = 806Ω)
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NXP Semiconductors
High-voltage back-to-back OVP switch
aaa-032271
Figure 12. ISNS response time on VIN
change
NX30P0121
Product data sheet
aaa-032272
Figure 13. ISNS response time on load
change
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High-voltage back-to-back OVP switch
13 Package outline
Figure 14. Package outline SOT1390-8 (WLCSP12) (1 of 2)
NX30P0121
Product data sheet
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NXP Semiconductors
High-voltage back-to-back OVP switch
Figure 15. Package outline SOT1390-8 (WLCSP12) (2 of 2)
NX30P0121
Product data sheet
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High-voltage back-to-back OVP switch
14 Soldering
Figure 16. Reflow soldering footprint for SOT1390-8
NX30P0121
Product data sheet
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NXP Semiconductors
High-voltage back-to-back OVP switch
Figure 17. Reflow soldering footprint part2 for WLCSP12 (SOT1390-8)
NX30P0121
Product data sheet
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NXP Semiconductors
High-voltage back-to-back OVP switch
Figure 18. Reflow soldering footprint part3 for WLCSP12 (SOT1390-8)
NX30P0121
Product data sheet
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High-voltage back-to-back OVP switch
15 Revision history
Table 10. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NX30P0121 v.1.0
20190619
Product data sheet
-
-
NX30P0121
Product data sheet
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16 Legal information
16.1 Data sheet status
Document status
[1][2]
Product status
[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple
devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability
for the consequences of use of such information. NXP Semiconductors
takes no responsibility for the content in this document if provided by an
information source outside of NXP Semiconductors. In no event shall NXP
Semiconductors be liable for any indirect, incidental, punitive, special or
consequential damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the removal or replacement
of any products or rework charges) whether or not such damages are based
on tort (including negligence), warranty, breach of contract or any other
legal theory. Notwithstanding any damages that customer might incur for
any reason whatsoever, NXP Semiconductors’ aggregate and cumulative
liability towards customer for the products described herein shall be limited
in accordance with the Terms and conditions of commercial sale of NXP
Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
NX30P0121
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes
no representation or warranty that such applications will be suitable
for the specified use without further testing or modification. Customers
are responsible for the design and operation of their applications and
products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications
and products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with
their applications and products. NXP Semiconductors does not accept any
liability related to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications or products, or
the application or use by customer’s third party customer(s). Customer is
responsible for doing all necessary testing for the customer’s applications
and products using NXP Semiconductors products in order to avoid a
default of the applications and the products or of the application or use by
customer’s third party customer(s). NXP does not accept any liability in this
respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
Rev. 1.0 — 19 June 2019
© NXP B.V. 2019. All rights reserved.
18 / 21
NX30P0121UK
NXP Semiconductors
High-voltage back-to-back OVP switch
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or
the grant, conveyance or implication of any license under any copyrights,
patents or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
16.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
NX30P0121
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.0 — 19 June 2019
© NXP B.V. 2019. All rights reserved.
19 / 21
NX30P0121UK
NXP Semiconductors
High-voltage back-to-back OVP switch
Tables
Tab. 1.
Tab. 2.
Tab. 3.
Tab. 4.
Tab. 5.
Ordering information ..........................................2
Ordering options ................................................2
............................................................................ 3
Function table ....................................................4
Limiting values (absolute maximum ratings) ......7
Tab. 6.
Tab. 7.
Tab. 8.
Tab. 9.
Tab. 10.
Recommended operating conditions ................. 7
Thermal characteristics ..................................... 8
Static characteristics ......................................... 8
Dynamic characteristics .................................... 9
Revision history ...............................................17
Fig. 12.
Fig. 13.
Fig. 14.
ISNS response time on VIN change ................11
ISNS response time on load change ...............11
Package outline SOT1390-8 (WLCSP12) (1
of 2) .................................................................12
Package outline SOT1390-8 (WLCSP12) (2
of 2) .................................................................13
Reflow soldering footprint for SOT1390-8 ....... 14
Reflow soldering footprint part2 for
WLCSP12 (SOT1390-8) ..................................15
Reflow soldering footprint part3 for
WLCSP12 (SOT1390-8) ..................................16
Figures
Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.
Fig. 8.
Fig. 9.
Fig. 10.
Fig. 11.
Logic symbol ..................................................... 2
Internal block diagram .......................................3
NX30P0121 Pin map, WLCSP12 ...................... 3
External OVLO adjustment ............................... 5
Timing diagram at start up ................................ 6
Timing diagram when VOUT is driven by
external power ...................................................6
NX30P0121UK application diagram .................. 7
VOUT leakage current (EN = 0V) ................... 10
VIN leakage current (EN = 0V) ....................... 10
ISNS accuracy (RISNS = 806Ω) ..................... 10
Startup (RISNS = 806Ω) ................................. 10
NX30P0121
Product data sheet
Fig. 15.
Fig. 16.
Fig. 17.
Fig. 18.
All information provided in this document is subject to legal disclaimers.
Rev. 1.0 — 19 June 2019
© NXP B.V. 2019. All rights reserved.
20 / 21
NX30P0121UK
NXP Semiconductors
High-voltage back-to-back OVP switch
Contents
1
2
3
4
4.1
5
6
6.1
6.2
7
7.1
7.2
7.3
7.4
7.5
7.6
8
9
10
11
12
12.1
12.2
12.3
13
14
15
16
General description ............................................ 1
Features and benefits .........................................1
Applications .........................................................1
Ordering information .......................................... 2
Ordering options ................................................ 2
Functional diagram ............................................. 2
Pinning information ............................................ 3
Pinning ............................................................... 3
Pin description ................................................... 3
Functional description ........................................4
EN pin ................................................................4
Undervoltage Lockout (UVLO) ...........................4
Overvoltage Lockout (OVLO) ............................ 4
Over-temperature protection ..............................5
ISNS pin ............................................................ 5
Timing diagram ..................................................6
Application diagram ............................................6
Limiting values .................................................... 7
Recommended operating conditions ................ 7
Thermal characteristics ......................................8
Electrical characteristics ....................................8
Static characteristics ..........................................8
Dynamic characteristics .....................................9
Graphs ............................................................. 10
Package outline .................................................12
Soldering ............................................................14
Revision history ................................................ 17
Legal information .............................................. 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section 'Legal information'.
© NXP B.V. 2019.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 19 June 2019
Document identifier: NX30P0121