STH160N4LF6-2
*Ć
N-channel 40 V, 0.0018 m
Ω
typ., 120 A, STripFET™ VI
DeepGATE™ Power MOSFET in a H²PAK-2 package
Datasheet
-
production data
TAB
2
1
H
2
PAK-2
3
Figure 1. Internal schematic diagram
'Ć7$%
Features
Order code V
DS
R
DS(on) max I
STH160N4LF6-2 40 V 0.0022
Ω
D
120 A
P
TOT
150 W
•
•
•
•
•
R
DS(on)
* Q g
industry benchmark
Extremely low on-resistance R
Logic level drive
High avalanche ruggedness
100% avalanche tested
DS(on)
•
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the 6 th
generation of STripFET™
DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R
DS(on) in all packages.
6ĆĆ
$0Y
Order code
STH160N4LF6-2
Table 1. Device summary
Marking Package
160N4LF6 H
2
PAK-2
Packaging
Tape and reel
April 2014
This is information on a product in full production.
DocID026265 Rev 1 1/17 www.st.com
5
6
3
4
1
2
Contents
Contents
STH160N4LF6-2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17 DocID026265 Rev 1
STH160N4LF6-2 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Derating factor
I
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by T jmax
)
Single pulse avalanche energy E
AS
T stg
T j
Storage temperature
Operating junction temperature
1.
Pulse width is limited by safe operating area
Value
60
323
-55 to 175
40
± 20
120
100
480
150
1
Table 3. Thermal resistance
Parameter Symbol
R thj-case
Thermal resistance junction-case max
R thj-a
Thermal resistance junction-ambient max
Value
1.0
62.5
Unit
°C/W
°C/W
Unit
V
V
A
A
A
W
W/°C
A mJ
°C
DocID026265 Rev 1 3/17
17
Electrical characteristics STH160N4LF6-2
(T
CASE
= 25 °C unless otherwise specified).
Symbol Parameter
Table 4. Static
Test conditions
V
(BR)DSS
Drain-source breakdown voltage (V
GS
= 0)
V
R
I
I
DSS
GSS
GS(th)
DS(on)
I
D
= 250 μ A
Zero gate voltage drain current (V
GS
= 0)
V
DS
= 20 V
V
DS
= 20 V, Tc = 125 °C
Gate body leakage current
(V
DS
= 0)
V
GS
= ± 20 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 μ A
Static drain-source
V
GS
= 10 V, I
D
= 60 A on-resistance
V
GS
= 5 V, I
D
= 60 A
Min.
Typ.
40
1
-
-
-
Max.
Unit
1
10
V
μ A
μ A
± 100 nA
V
0.0018
0.0022
Ω
0.002
0.0027
Ω
Symbol
C iss
C oss
C
Q
Q
Q rss g gs gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V
DS
= 20 V, f=1 MHz,
V
GS
= 0 V
V
DD
= 20 V, I
D
= 60 A
V
GS
= 10 V
(see Figure 14
)
-
-
-
-
Min
-
-
Typ.
Max.
Unit
8130
770
-
pF pF
670
181
22
46
-
-
-
pF nC nC nC
Symbol t d(on) t r t d(off) t f
Table 6. Switching on/off (inductive load)
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 20 V, I
D
= 60 A,
R
G
= 4.7
Ω
, V
GS
= 10 V
(see Figure 15
)
Min.
-
-
-
-
Typ.
Max.
Unit
20
131
205
116 -
-
-
ns ns ns ns
4/17 DocID026265 Rev 1
STH160N4LF6-2 Electrical characteristics
Symbol Parameter
Table 7. Source drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2)
I t
Q rr rr
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 120 A, V
GS
= 0
I
SD
= 120 A, di/dt = 100 A/ μ s,
V
DD
= 32 V
(see Figure 17
)
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 μ s, duty cycle 1.5%
-
-
-
-
-
Min.
Typ.
Max.
Unit
120
480
0.97
57
53
A
A
V ns nC
1.86
A
DocID026265 Rev 1 5/17
17
Electrical characteristics STH160N4LF6-2
Figure 2. Safe operating area
I
D
(A)
DS(on)
100
Operation in this area is
Limited by max R
Tj=175°C
Tc=25°C
Single pulse
10
AM15854v1
100 µ s
1ms
10 m s
1
Figure 3. Thermal impedance
0.1
0.1
1 10 V
DS
(V)
I
D
(A)
Figure 4. Output characteristics
AM15797v1
VGS= 6, 7, 8, 9, 10 V VGS= 5 V
250
VGS= 4 V
200
150
Figure 5. Transfer characteristics
AM15798v1
I
D
(A)
VDS= 0.6V
250
200
150
100 100
50
VGS= 3 V
50
0
0 0.2
0.4
0.6
0.8
V
DS
(V)
0
0 2 4 6 8 V
GS
(V)
Figure 6. Gate charge vs gate-source voltage
AM15799v1
V
GS
(V)
12
V
DD
=20V
I
D
=60V
Figure 7. Static drain-source on-resistance
R
DS(on)
(m
Ω
)
1.80
V
GS
=10V
AM15800v1
1.75
10
8 1.70
6
1.65
4
1.60
2
0
0 50 100 150 200 Q g
(nC)
1.55
1.50
10 20 30 40 50 60 I
D
(A)
6/17 DocID026265 Rev 1
STH160N4LF6-2 Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
AM15801v1
Figure 9. Normalized V
(BR)DSS
vs temperature
AM15802v1
V
(BR)DSS
(norm)
1.1
I
D
=250
µ
A
1.08
1.06
10000
Ciss
1.04
1000
100
0 8 16 24 32
Coss
Crss
V
DS
(V)
1.02
1
0.98
0.96
0.94
0.92
-75 -25 25 75 125 T
J
(°C)
Figure 10. Normalized gate threshold voltage vs temperature
AM15803v1 V
GS(th)
(norm)
1.2
1
I
D
=250
µ
A
Figure 11. Normalized on-resistance vs temperature
AM15804v1
R
DS(on)
(norm)
2
V
GS
=10V
1.5
0.8
0.6
1
0.4
0.5
0.2
0
-75 -25 25 75 125 T
J
(°C)
0
-75 -25 25 75 125 T
J
(°C)
Figure 12. Source-drain diode forward characteristics
AM15805v1
V
SD
(V)
T
J
=-55°C
0.9
0.85
0.8
0.75
0.7
0.65
0.6
0.55
0.5
0 20 40
T
J
=150°C
60
T
J
=25°C
80 I
SD
(A)
DocID026265 Rev 1 7/17
17
Test circuits
3 Test circuits
STH160N4LF6-2
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k
Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ
F
I
G
=CONST
2.7k
Ω
100
Ω
D.U.T.
V
G
P
W
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
47k
Ω
P
W
1k
Ω
AM01469v1
Figure 16. Unclamped inductive load test circuit
25 Ω
G
D
A
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ
F
1000
μ
F
V
DD
V i
AM01470v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
V
D
I
D
L
2200
μ
F
3.3
μ
F
V
DD
D.U.T.
P w
AM01471v1
Figure 18. Switching time waveform t on td on t r t off td off t f
I
DM
90%
90%
10%
I
D 0
10% V
DS
V
DD
V
DD
90%
V
GS
AM01472v1
0
10%
AM01473v1
8/17 DocID026265 Rev 1
STH160N4LF6-2
Figure 19. Gate charge waveform
Vds
Id
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Test circuits
DocID026265 Rev 1 9/17
17
Package mechanical data
4 Package mechanical data
STH160N4LF6-2
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
10/17 DocID026265 Rev 1
STH160N4LF6-2
Figure 20. H²PAK-2 drawing
Package mechanical data
DocID026265 Rev 1
8159712_C
11/17
17
Package mechanical data
Dim.
L4
M
R
V
L
L1
L2
L3
E
F
H
H1
A
A1
C e
STH160N4LF6-2
Table 8. H²PAK-2 mechanical data mm
Min.
Typ.
15.30
1.27
4.93
6.85
1.5
2.6
0.20
0°
4.30
0.03
1.17
4.98
0.50
0.78
10.00
7.40
-
Max.
15.80
1.40
5.23
7.25
1.7
2.9
0.60
8°
4.80
0.20
1.37
5.18
0.90
0.85
10.40
7.80
12/17 DocID026265 Rev 1
STH160N4LF6-2 Package mechanical data
Figure 21. H²PAK-2 recommended footprint (dimensions are in mm)
8159712_C
DocID026265 Rev 1 13/17
17
Packaging mechanical data
5 Packaging mechanical data
T
Top cover tape
Figure 22. Tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
K0
B0
A0 P1
User direction of feed
D1
STH160N4LF6-2
F
E
W
User direction of feed
R
Bending radius
AM08852v2
14/17 DocID026265 Rev 1
STH160N4LF6-2
A
REEL DIMENSIONS
D
B
Figure 23. Reel
40mm min.
Access hole
At sl ot location
C
Packaging mechanical data
T
N
Dim.
P0
P1
P2
R
T
W
D1
E
F
K0
A0
B0
D
Full radius Tape slot in core for tape start 25 mm min.
width
G measured at hub
AM08851v2
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
1.65
11.4
4.8
Table 9. H²PAK-2 leads tape and reel mechanical data
Tape Reel mm mm
Dim.
Min.
Max.
Min.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
D
G
N
T
A
B
C
1.5
12.8
20.2
24.4
100
Base qty
Bulk qty
0.35
24.3
Max.
330
13.2
26.4
30.4
1000
1000
DocID026265 Rev 1 15/17
17
Revision history
Date
24-Apr-2014
Revision
Table 10. Document revision history
Changes
1 First release.
STH160N4LF6-2
16/17 DocID026265 Rev 1
STH160N4LF6-2
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