STP80NF12
*
TAB
N-channel 120 V, 0.013
Ω
typ., 80 A, STripFET™ II
Power MOSFET in a TO-220 package
Datasheet
-
production data
1
2
3
Features
Type
STP80NF12
V
DSS
120 V
R
DS(on) max
< 0.018 Ω
•
Exceptional dv/dt capability
•
100% avalanche tested
•
Application oriented characterization
I
D
80 A
TO-220
Application
• Switching applications
Figure 1. Internal schematic diagram
'7$%
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.
6
$0Y
Order code
STP80NF12
Table 1. Device summary
Marking Package
P80NF12 TO-220
Packaging
Tube
February 2014
This is information on a product in full production.
DocID9204 Rev 8 0/12 www.st.com
3
4
5
1
2
Contents
Contents
STP80NF12
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
1/12 DocID9204 Rev 8
STP80NF12 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
I
DM
(2)
P
TOT
Drain-source voltage (V
Gate-source voltage
GS
= 0)
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
C
C
= 25 °C
=100 °C
Total dissipation at T
C
= 25 °C
Derating factor dv/dt
(3)
E
AS
(4)
T
J
T stg
Peak diode recovery voltage slope
Single pulse avalanche energy
Operating junction temperature
Storage temperature
1.
Limited by package
2.
Pulse width limited by safe operating area
3.
I
SD
< 80 A, di/dt < 300 A/µs, V
DD
= 80% V
(BR)DSS
4.
Starting T
J
= 25 °C, I
D
= 40 A, V
DD
= 50 V
Value
-55 to 175
120
± 20
80
60
320
300
2.0
10
350
Symbol
R thJC
R thJA
T l
Table 3. Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Value
0.5
62.5
300
Unit
A
A
A
V
V
W
W/°C
V/ns mJ
°C
Unit
°C/W
°C/W
°C
DocID9204 Rev 8 2/12
12
Electrical characteristics STP80NF12
(T
CASE
= 25 °C unless otherwise specified)
Symbol Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
Table 4. On/off states
Test conditions
I
D
= 250 μ A, V
GS
= 0
V
DS
= max rating
V
DS
= max rating @125°C
V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 40 A
Min.
Typ.
Max.
Unit
120
2
1
10
V
µA
µA
±100 nA
4 V
0.013
0.018
Ω
Table 5. Dynamic
Symbol g fs
(1)
C iss
C oss
C rss
Parameter Test conditions
Forward transconductance V
DS
=15 V, I
D
= 40 A
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=25 V, f=1 MHz,
V
GS
=0
Q gs
Q gs
Total gate charge
Gate-source charge
V
DD
= 80 V, I
D
= 80 A
V
GS
=10 V
Q gd
Gate-drain charge
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
-
-
-
-
Min.
Typ.
Max.
Unit
-
-
80
4300
600
S pF pF
230
140
23
51
189 pF nC nC nC
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 50 V, I
D
= 40 A,
R
G
=4.7 Ω, V
GS
=10 V
See Figure 13
Min.
Typ.
Max.
Unit
-
-
-
-
40
145
134
115
-
-
-
ns ns ns ns
3/12 DocID9204 Rev 8
STP80NF12 Electrical characteristics
Symbol Parameter
Table 7. Source drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
I
SD
=80 A, V
GS
=0
I
SD
=80 A, di/dt = 100 A/µs,
V
DD
=35 V, T
J
= 150 °C
Min.
Typ.
Max Unit
-
-
-
-
-
-
-
-
155
0.85
11
80
320
1.3
A
A
V ns
µC
A
DocID9204 Rev 8 4/12
12
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
STP80NF12
Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized B
VDSS
vs. temperature Figure 7. Static drain-source on resistance
5/12 DocID9204 Rev 8
STP80NF12
Figure 8. Gate charge vs. gate-source voltage
Electrical characteristics
Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage vs. temperature
Figure 11. Normalized on resistance vs. temperature
Figure 12. Source-drain diode forward characteristics
DocID9204 Rev 8 6/12
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Test circuits
3 Test circuits
STP80NF12
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CONST
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
47k
Ω
P
W
1k
Ω
AM01469v1
Figure 16. Unclamped inductive load test circuit
25 Ω
G
D
A
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ F
1000
μ F
V
DD
V i
AM01470v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
V
D
I
D
L
2200
μ F
3.3
μ F
V
DD
D.U.T.
P w
AM01471v1
Figure 18. Switching time waveform t on td on t r t off td off t f
I
DM
90%
90%
10%
I
D 0
10% V
DS
V
DD
V
DD
90%
V
GS
AM01472v1
0
10%
AM01473v1
7/12 DocID9204 Rev 8
STP80NF12
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
DocID9204 Rev 8 8/12
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Package mechanical data
Figure 19. TO-220 type A drawing
STP80NF12
9/12 DocID9204 Rev 8
BW\SH$B5HYB7
STP80NF12
Dim.
D
D1
E e e1
F
H1
J1
L
A b b1 c
L1
L20
L30
∅
P
Q
Package mechanical data
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Table 8. TO-220 type A mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
16.40
28.90
3.75
2.65
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
DocID9204 Rev 8 10/12
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Revision history STP80NF12
Date
21-Jun-2004
24-Jul-2006
31-Jan-2007
10-Apr-2007
19-Apr-2007
17-Nov-2008
26-Feb-2014
Revision
5
6
7
2
3
4
8
Table 9. Revision history
Changes
Preliminary version
The document has been reformatted, SOA updated
Typo mistake on Table 2 .
Typo mistake on Table 2 and Table 3
Corrected value on Table 4
Inserted E
AS
value on Table 2 .
Updated:
Section 4: Package mechanical data
Inserted E
AS
value on Table 2 .
Added value V
GS on Table 4
11/12 DocID9204 Rev 8
STP80NF12
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