STMicroelectronics STD5N20L Datasheet
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STD5N20L
N-CHANNEL 200V - 0.65
Ω
- 5A DPAK
STripFET™ MOSFET
Table 1: General Features
TYPE V
DSS
R
DS(on)
I
D
Pw
■
■
STD5N20L 200 V < 0.7
Ω
5 A 33 W
TYPICAL R
DS
(on) = 0.65
Ω
@ 5V
CONDUCTION LOSSES REDUCED
■
■
LOW INPUT CAPACIATNCE
LOW THRESHOLD DEVICE
DESCRIPTION
The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC
Motor Control and lighting application.
Figure 1: Package
1
3
DPAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
■
UPS AND MOTOR CONTROL
■
LIGHTING
Table 2: Order Codes
SALES TYPE
STD5N20LT4
MARKING
D5N20L
PACKAGE
DPAK
PACKAGING
TAPE & REEL
September 2004
NEW DATASHEET ACCORDING TO PCN DSG-TRA/04/532
Rev. 3
1/10
STD5N20L
Table 3: Absolute Maximum ratings
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
Drain-gate Voltage (R
GS
Gate- source Voltage
= 0)
= 20 k
Ω
)
I
D
I
DM
( )
P
TOT
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
Drain Current (pulsed)
C
Total Dissipation at T
C
= 25°C
Derating Factor
T stg
Storage Temperature
T j
Operating Junction Temperature
( ) Pulse width limited by safe operating area
= 100°C
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
T l
Maximum Lead Temperature For Soldering Purpose
Value
200
200
±20
5
3.6
20
33
0.27
–55 to 150
3.75
100
275
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
V
(BR)DSS
I
DSS
Parameter
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Test Conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125°C
Min.
200
Typ.
Max.
1
10
I
GSS
V
GS(th)
R
DS(on)
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ±20V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 50µA
Static Drain-source On
Resistance
V
GS
= 5 V, I
D
= 2.5 A
1
0.65
±100
2.5
0.7
Unit
V
V
V
A
A
A
W
W/°C
°C
°C/W
°C/W
°C
Unit
V
µA
µA nA
V
Ω
2/10
STD5N20L
Table 6: Dynamic
Symbol Parameter
Forward Transconductance g fs
(2)
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance t d(on) t r t d(off) t f
Q g
Q gs
Q gd
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DS
= 15 V, I
D =
5 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
V
DD
= 100 V, I
D
= 2.5 A
R
G
= 4.7
Ω,
V
GS
= 5V
(Resistive Load see Figure 14)
V
DD
= 160 V, I
D
= 5 A,
V
GS
= 5V
Table 7: Source Drain Diode
Symbol Parameter Test Conditions
I
SD
I
SDM
(*)
V
SD
(1) t rr
Q rr
I
RRM
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
I
SD
= 5 A, V
GS
= 0
= 5 A, di/dt = 100 A/µs,
V
DD
= 100 V, T j
= 25°C
(see test circuit, see Figure 15)
t rr
Q rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Starting T j
=25 °C, I d
= 5 A, V
DD
= 50 V
(*) Pulse width limited by safe operating area
I
SD
= 5 A, di/dt = 100 A/µs,
V
DD
= 100 V, T j
= 150°C
(see test circuit, see Figure 15)
Min.
Min.
Typ.
6.5
242
44
6
11.5
21.5
14
15.5
5
1.5
3
Max.
6 ns ns ns ns nC nC nC
Unit
S pF pF pF
93
237
5.1
97
286
5.9
Typ.
Max.
5
20
1.5
Unit
A
A
V ns nC
A ns nC
A
3/10
STD5N20L
Figure 3: Safe Operating Area Figure 6: Thermal Impedance
Figure 4: Output Characteristics Figure 7: Transfer Characteristics
Figure 5: Transconductance Figure 8: Static Drain-source On Resistance
4/10
Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
STD5N20L
Figure 10: Normalized Gate Thereshold Voltage vs Temperature
Figure 13: Normalized On Resistance vs Temperature
Figure 11: Source-Drain Diode Forward Characteristics
5/10
STD5N20L
Figure 14: Switching Times Test Circuit For
Resistive Load
Figure 16: Gate Charge Test Circuit
Figure 15: Test Circuit For Inductive Load
Switching and Diode Recovery Times
6/10
DIM.
G
H
D
E
B
B2
C
C2
L2
L4
A
A1
A2
V2
6.00
6.40
4.40
9.35
0.64
5.20
0.45
0.48
MIN.
2.20
0.90
0.03
0.60
0 o
TO-252 (DPAK) MECHANICAL DATA
mm
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
0.8
1.00
8 o
0.024
0 o inch
TYP.
0.031
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
0.039
0 o
STD5N20L
P032P_B
7/10
STD5N20L
DPAK FOOTPRINT TUBE SHIPMENT (no suffix)*
All dimensions are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA mm inch
DIM.
MIN.
MAX.
MIN.
MAX.
A
B
C
D
G
N
330 12.992
1.5
0.059
12.8
13.2
0.504
0.520
20.2
0.795
16.4
18.4
0.645
0.724
50 1.968
T 22.4
0.881
BASE QTY
2500
BULK QTY
2500
P1
P2
R
W
E
F
K0
P0
TAPE MECHANICAL DATA mm inch
DIM.
MIN.
MAX.
MIN.
MAX.
A0
B0
B1
D
D1
6.8
7 0.267
0.275
10.4
10.6
0.409
0.417
1.5
1.5
12.1
0.476
1.6
0.059
0.063
0.059
1.65
1.85
0.065
0.073
7.4
7.6
0.291
0.299
2.55
2.75
0.100
0.108
3.9
4.1
0.153
0.161
7.9
1.9
8.1
0.311
0.319
2.1
0.075
0.082
40 1.574
15.7
16.3
0.618
0.641
* on sales type
8/10
STD5N20L
Table 8: Revision History
Date
08-June-2004
20-Sep-2004
Revision
2
3
Description of Changes
New Stylesheet. Datasheet according to PCN DSG-TRA/04/532
Changes on Table 3, and on Figure 3.
9/10
STD5N20L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
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