STD20NF20
STF20NF20, STP20NF20
N-channel 200 V, 0.10
Ω
, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET™ Power MOSFET
Features
Type
STD20NF20
STF20NF20
STP20NF20
V
DSS
R
DS(on)
I
D
P
W
200 V < 0.125
Ω
18 A 110 W
200 V < 0.125
Ω
18 A 30 W
200 V < 0.125
Ω
18 A 110 W
■
■
■
Exceptional dv/dt capability
Low gate charge
100% avalanche tested
Application
■ Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters.
1
2
3
TO-220FP
1
DPAK
3
TO-220
1
2
3
Figure 1.
Internal schematic diagram
'
$
3
Table 1.
Device summary
Order codes
STD20NF20
STF20NF20
STP20NF20
Marking
20NF20
20NF20
20NF20
Package
DPAK
TO-220FP
TO-220
!-V
Packaging
Tape and reel
Tube
Tube
December 2009 Doc ID 13154 Rev 4 1/15 www.st.com
15
5
6
3
4
1
2
Contents
Contents
STD20NF20, STF20NF20, STP20NF20
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol Parameter
V
DS
V
GS
P
I
D
I
D
I
DM
(1)
TOT
Drain-source voltage (V
Gate- source voltage
GS
= 0)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Derating factor dv/dt
V
(2)
ISO
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s; Tc = 25 °C)
T stg
T j
Storage temperature
Max. operating junction temperature
1.
Pulse width limited by safe operating area
2.
I
SD
≤
18 A, di/dt
≤
400 A/µs, V
DD
≤
V
(BR)DSS
TO-220, DPAK TO-220FP
200
± 20
18
11
72
110
0.72
15
-55 to 175
30
0.2
2500
Unit
A
W
W/°C
V/ns
A
A
V
V
V
°C
Table 3.
Symbol
Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
T l
Maximum lead temperature for soldering purpose
1.
When mounted on 1inch² FR-4, 2 Oz copper board.
TO-220 DPAK TO-220FP Unit
1.38
62.5
1.38
50
(1)
5
62.5
°C/W
°C/W
300 °C
Table 4.
Symbol
Avalanche characteristics
Parameter
I
AR
E
AS
Avalanche current, repetitive or notrepetitive (pulse width limited by T j
max)
Single pulse avalanche energy
(starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Max value
18
110
Unit
A mJ
Doc ID 13154 Rev 4 3/15
4/15
Electrical characteristics STD20NF20, STF20NF20, STP20NF20
(T
CASE
=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
V
(BR)DSS
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Drain-source breakdown voltage
Zero gate voltage drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
Test conditions Min.
Typ.
Max. Unit
I
D
= 1 mA, V
GS
= 0
V
DS
= Max rating
V
DS
= Max rating, T
C
= 125 °C
200
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 10 A
2
1
10
±100
V
µA
µA nA
3 4 V
0.10
0.125
Ω
Table 6.
Symbol
Dynamic
Parameter Test conditions g fs
C
C
C
(1) iss oss rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
V
V
V
DS
DS
GS
= 25 V
= 25 V, f = 1 MHz,
= 0
,
I
D
= 10 A t d(on) t r t d(off) t r
Q g
Q gs
Q gd
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
R
G
(see Figure 15)
V
= 4.7
Ω
V
GS
DD
V
GS
= 100 V, I
D
= 160 V, I
= 10 V
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
D
(see Figure 16)
= 10 A,
= 10 V
= 20 A,
Min.
Typ.
Max.
Unit
13
-
-
-
940
197
30
15
30
40
10
28
5.6
14.5
39
S pF pF pF nC nC nC ns ns ns ns
Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
I
SD
SDM
(1)
Source-drain current
Source-drain current
(pulsed)
V
SD
(2) t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
SD
I
SD
= 20 A, V
GS
= 0
= 20 A, di/dt = 100A/µs
V
DD
= 50 V
(see Figure 20)
SD
= 20 A, di/dt = 100 A/µs
V
DD
= 50 V, T j
= 150 °C
(see Figure 20)
1.
Pulse width limited by safe operating area.
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min.
Typ.
Max.
Unit
-
-
-
-
155
775
10
183
1061
11.6
18
72
1.6
A
A
V ns nC
A ns nC
A
Doc ID 13154 Rev 4 5/15
Electrical characteristics STD20NF20, STF20NF20, STP20NF20
Figure 2.
Safe operating area for TO-220,
DPAK
Figure 3.
Thermal impedance area for TO-220,
DPAK
Figure 4.
Safe operating area for TO-220FP Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Output characteristics Figure 7.
Transfer characteristics
6/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20 Electrical characteristics
Figure 8.
Transconductance Figure 9.
Static drain-source on resistance
AM0 3 979v1
G
F S
( S )
19
17
T
J
=-50°C
T
J
=25°C
15
1 3
T
J
=175°C
11
9
7
3 6 9 12 15 1 8 I
D
(A)
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage vs temperature
AM0 3 9 8 0v1
V
G S (th)
(norm)
1.10
Figure 13. Normalized on resistance vs temperature
R
D S (on)
(norm)
2.4
AM0 3 9 8 1v1
2.2
1.00
2.0
0.90
1.
8
0.
8 0 1.6
0.70
0.60
0.50
0.40
-50 0 50 100 150 T
J
(°C)
1.4
1.2
1.0
0.
8
0.6
-50 0 50 100 150 T
J
(°C)
Doc ID 13154 Rev 4 7/15
Electrical characteristics
Figure 14. Source-drain diode forward characteristics
V
S D
(V)
T
J
=-50°C
AM0 3 9 8 2v1
0.9
T
J
=25°C
0.
8
0.7
T
J
=175°C
0.6
0.5
3 6 9 12 15 1 8 I
S D
(A)
STD20NF20, STF20NF20, STP20NF20
8/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20
3 Test circuits
Test circuits
Figure 15. Switching times test circuit for resistive load
Figure 16. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
D
R
G
R
L
2200
µ
F
3 .
3
µ
F
V
G S
D.U.T.
V
DD
V i
=20V=V
GMAX
2200
µ F
I
G
=CON S T
2.7k
Ω
100
Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 17. Test circuit for inductive load switching and diode recovery times
Figure 18. Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 µ H
3 .
3
µ F
1000
µ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
µ F
3 .
3
µ F
V
DD
P w
AM01470v1
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
V
D
V
(BR)D SS t on td on t r t off td off t f
AM01471v1
I
DM
90 %
90 %
10 %
I
D 0
10 % V
D S
V
DD
V
DD
90 %
V
G S
AM01472v1
0
10 %
AM0147 3 v1
Doc ID 13154 Rev 4 9/15
Package mechanical data
4 Package mechanical data
STD20NF20, STF20NF20, STP20NF20
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
10/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20
TO-220 type A mechanical data
Package mechanical data mm
Typ
Dim
A b b 1 c
D
D1
E e e1
F
H1
J1
L
L1
L20
L 3 0
∅
P
Q
Min
4.40
0.61
1.14
0.4
8
15.25
10
2.40
4.
9 5
1.2
3
6.20
2.40
1 3
3 .50
3 .75
2.65
1.27
16.40
2 8 .
9 0
Max
4.60
0.
88
1.70
0.70
15.75
10.40
2.70
5.15
1.
3 2
6.60
2.72
14
3 .
93
3 .
8 5
2.
9 5
Doc ID 13154 Rev 4
0015988_Rev_S
11/15
Package mechanical data
DIM.
D
D 1
E
E 1 e e 1
H
L
L 1
L 2
L 4
R
V2
A
A 1
A 2 b b 4 c c 2
STD20NF20, STF20NF20, STP20NF20 m i n .
2 .
2 0
0 .
9 0
0 .
0 3
0 .
6 4
5 .
2 0
0 .
4 5
0 .
4 8
6 .
0 0
6 .
4 0
TO-252 (DPAK) mechanical data
mm.
t y p
5 .
1 0
4 .
7 0
2 .
2 8
4 .
4 0
9 .
3 5
1
2 .
8 0
0 .
8 0
0 .
6 0
0 o
0 .
2 0 m a x .
2 .
4 0
1 .
1 0
0 .
2 3
0 .
9 0
5 .
4 0
0 .
6 0
0 .
6 0
6 .
2 0
6 .
6 0
4 .
6 0
1 0 .
1 0
1
8 o
12/15 Doc ID 13154 Rev 4
006 8 772_G
STD20NF20, STF20NF20, STP20NF20
5 Packaging mechanical data
DPAK FOOTPRINT
Packaging mechanical data
All dimensions are in millimeters
TAPE MECHANICAL DATA mm inch
DIM.
MIN.
MAX.
MIN.
MAX.
A0 6.8
7 0.267
0.275
B0 10.4
10.6
0.409
0.417
B1
D
D1
E
F
1.5
1.5
12.1
1.6
0.059
0.059
0.476
0.063
1.65
1.85
0.065
0.073
7.4
7.6
0.291
0.299
K0 2.55
2.75
0.100
0.108
P0 3.9
4.1
0.153
0.161
P1
P2
R
W
7.9
1.9
40
8.1
2.1
0.311
0.075
1.574
0.319
0.082
15.7
16.3
0.618
0.641
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA mm inch
DIM.
MIN.
MAX.
MIN.
MAX.
G
N
T
A
B
C
D
330 12.992
1.5
0.059
12.8
13.2
0.504
0.520
20.2
0.795
16.4
18.4
0.645
0.724
50 1.968
22.4
0.881
BASE QTY
2500
BULK QTY
2500
Doc ID 13154 Rev 4 13/15
Revision history STD20NF20, STF20NF20, STP20NF20
Table 8.
Revision history
Date Revision
25-Jan-2007
20-Mar-2007
27-Apr-2007
10-Dec-2009
1
2
3
4
Changes
First release
Typo mistake in first page (order codes)
Updates on Table 6: Dynamic
Modified device summary on first page
14/15 Doc ID 13154 Rev 4
STD20NF20, STF20NF20, STP20NF20
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Doc ID 13154 Rev 4 15/15
