STW20N60M2-EP
N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP
Power MOSFET in a TO-247 package
TO-247
1
2
3
Features
Order code
STW20N60M2-EP
V
DS
600 V
• Extremely low gate charge
• Excellent output capacitance (C
OSS
) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
R
DS(on)
max.
0.278 Ω
I
D
13 A
D(2)
Applications
• Switching applications
• Tailored for very high frequency converters (f > 150 kHz)
G(1)
S(3)
AM01476v1_No_tab
Description
This device is an N-channel Power MOSFET developed using MDmesh™
M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.
Product status link
STW20N60M2-EP
Product summary
Order code STW20N60M2-EP
Marking
Package
Packing
20N60M2EP
TO-247
Tube
DS12513 - Rev 2 - June 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STW20N60M2-EP
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
V
GS
I
D
I
D
I
DM
(1)
P
TOT
dv/dt (2)
Gate-source voltage
Drain current (continuous) at T
C
Drain current (continuous) at T
C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
= 25 °C
= 100 °C
dv/dt (3)
T
J
T stg
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature range
Storage temperature range
1. Pulse width limited by safe operating area.
2. I
SD
≤ 13 A, di/dt ≤ 400 A/µs; V
DS peak
< V
(BR)DSS
, V
DD
= 400 V.
3. V
DS
≤ 480 V
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Symbol
I
AR
E
AS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by T jmax
)
Single pulse avalanche energy
(starting T j
= 25 °C, I
D
= I
AR
; V
DD
= 50 V)
Value
±25
13
8
52
110
15
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
°C
Value
1.14
50
Unit
°C/W
°C/W
Value
2.7
138
Unit
A mJ
DS12513 - Rev 2 page 2/14
2
STW20N60M2-EP
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4. On/off states
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
V
GS
= 0 V, I
Test conditions
D
= 1 mA
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage
Drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source onresistance
1. Defined by design, not subject to production test.
V
GS
= 0 V, V
DS
= 600 V
V
GS
= 0 V, V
DS
= 600 V, T
C
= 125 °C
(1)
V
DS
V
DS
= 0 V, V
= V
GS
GS
, I
D
= ±25 V
= 250 µA
V
GS
= 10 V, I
D
= 6.5 A
Min.
Typ.
Max.
Unit
600 V
3.25
1
100
±10
4.75
4
0.230
0.278
µA
µA
µA
V
Ω
Table 5. Dynamic
Symbol
C iss
C oss
C rss
C oss eq.
(1)
R
G
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance V
DS
= 0 to 480 V, V
GS
= 0 V
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
Test conditions
= 100 V, f = 1 MHz, V
GS
= 0 V
V
DD
= 480 V, I
D
= 13 A, V
GS
= 0 to 10 V
(see Figure 15. Test circuit for gate charge behavior )
Min.
-
-
-
-
-
-
-
-
Typ.
787
50
1.2
89
5.9
22
3.5
10.5
Max.
-
-
-
-
-
-
-
-
Unit pF pF
Ω nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V to 80% V
DSS
DS
increases from 0
Symbol
E off
Parameter
Turn-off energy (from 90% V
GS to 0% I
D
)
Table 6. Switching energy
Test conditions
V
DD
= 400 V, I
D
= 2 A, R
G
= 4.7 Ω,
V
GS
= 10 V
V
DD
= 400 V, I
D
= 5 A, R
G
= 4.7 Ω,
V
GS
= 10 V
Min.
Typ.
Max.
Unit
7.2
μJ
20.4
μJ
DS12513 - Rev 2 page 3/14
DS12513 - Rev 2
STW20N60M2-EP
Electrical characteristics
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
V
DD
= 300 V, I
D
= 6.5 A, R
G
= 4.7 Ω,
V
GS
= 10 V (see
Figure 14. Test circuit for resistive load switching times and
Figure 19. Switching time waveform )
Min.
Typ.
Max.
Unit
10.5
ns
5.2
ns
-
41
8 -
ns ns
Table 8. Source-drain diode
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulse width is limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Test conditions
V
GS
= 0 V, I
SD
= 13 A
I
SD
= 13 A, di/dt = 100 A/µs, V
DD
= 60 V
(see Figure 16. Test circuit for inductive load switching and diode recovery times
)
I
SD
= 13 A, di/dt = 100 A/µs, V
DD
= 60 V,
T j
= 150 °C (see
Figure 16. Test circuit for inductive load switching and diode recovery times )
-
-
-
-
-
-
Min.
Typ.
Max.
Unit
13 A
-
52
1.6
A
V
230
2.3
20
287
2.9
20.2
ns
µC
A ns
µC
A page 4/14
STW20N60M2-EP
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I D
(A)
Figure 1. Safe operating area
GIPD290120161707SOA
10
Operation in this area is
Limited by max R
DS(on)
1
0.1
0.1
1 t p = 10µs t p = 100µs t p = 1ms
Tj=150°C
Tc=25°C
Single pulse
10 100 V DS (V) t p = 10ms
10
5
0
0
I
D
(A)
30
Figure 3. Output characteristics
GIPG180220160958OCH
V
GS
= 8, 9, 10 V
V
GS
= 7 V
25
20
15
V
GS
= 6 V
4 8 12
V
GS
= 5 V
16 V
DS
(V)
Figure 5. Gate charge vs gate-source voltage
V
GS
(V)
12
10
V
DS
GIPG210120161606QVG V
DS
(V)
600
V
DD
= 480 V,
I
D
= 13 A
500
8 400
6
4
2
0
0 5 10 15 20 25
300
200
100
Q
0 g
(nC)
Figure 2. Thermal impedance
10
5
0
3
25
20
15
I
D
(A)
30
Figure 4. Transfer characteristics
GIPG090220161518TCH
V
DS
= 17 V
4 5 6 7 V
GS
(V)
Figure 6. Static drain-source on-resistance
GIPG020220161146RID
R
DS(on)
(Ω)
V
GS
= 10 V
0.240
0.235
0.230
0.225
0.220
0 2 4 6 8 10 12 I
D
(A)
DS12513 - Rev 2 page 5/14
STW20N60M2-EP
Electrical characteristics (curves)
C
(pF)
Figure 7. Capacitance variations
GIPG210120161637CVR
Ci ss
1000
100
C oss
10
1
0.1
1
C rss
10 100 V
DS
(V)
Figure 9. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
2.2
GIPG020220161245RON
V
GS
= 10 V
1.8
1.4
1.0
0.6
0.2
-75 -25 25 75 125 T j
(°C)
Figure 11. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
1.08
GIPG020220161300BDV
I
D = 1 mA
1.04
1.00
0.96
0.92
0.88
-75 -25 25 75 125 T j
(°C)
Figure 8. Output capacitance stored energy
E
OSS
(µJ)
6
GIPG210120161026EOS
3
2
5
4
1
0
0 100 200 300 400 500 600 V
DS
(V)
Figure 10. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
1.1
GIPG020220161244VTH
I
D
= 250 µA
1.0
0.9
0.8
0.7
0.6
-75 -25 25 75 125 T j
(°C)
Figure 12. Source-drain diode forward characteristics
V
SD
(V)
1.1
GIPG210120161002SDF
T
J
= -50 °C
1
0.9
0.8
T
J
= 25 °C
T
J
= 150 °C
0.7
0.6
0.5
0 2 4 6 8 10 12 I
SD
(A)
DS12513 - Rev 2 page 6/14
Figure 13. Turn-off switching energy vs drain current
Eoff [µJ] GIPG030220161548SDF
30
25
20
15
10
5
0
0 1
V
R
V
DD
G
GS
= 400 V
= 4.7 Ω
= 10 V
2 3 4 5 6 7 Id [A]
STW20N60M2-EP
Electrical characteristics (curves)
DS12513 - Rev 2 page 7/14
STW20N60M2-EP
Test circuits
3
Test circuits
Figure 14. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 16. Test circuit for inductive load switching and diode recovery times
Figure 15. Test circuit for gate charge behavior
V
GS pulse width
2200
μF
+
1 kΩ
12 V
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 17. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 18. Unclamped inductive waveform
V
(BR)DSS
V
D
I DM
I D
V
DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF V
DD
D.U.T.
AM01471v1
Figure 19. Switching time waveform
0 t d(on) t on t r
90%
10%
V
GS
V
DS
90% t d(off) t off t f
90%
10%
0 10%
AM01473v1
DS12513 - Rev 2 page 8/14
4
STW20N60M2-EP
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
DS12513 - Rev 2 page 9/14
4.1
TO-220 package information
Figure 20. TO-247 package outline
STW20N60M2-EP
TO-247 package information
DS12513 - Rev 2
0075325_9 page 10/14
Dim.
e
L
L1
D
E
A
A1 b b1 b2 c
L2
ØP
ØR
S
Table 9. TO-247 package mechanical data mm
Typ.
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
5.45
18.50
3.55
4.50
5.30
5.50
STW20N60M2-EP
TO-247 package information
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
DS12513 - Rev 2 page 11/14
STW20N60M2-EP
Revision history
Date
20-Mar-2018
04-Jun-2018
Revision
1
2
Table 10. Document revision history
Changes
First release, the part number previously included in DS11505.
The document status is production data.
Modified
Table 1. Absolute maximum ratings .
Modified
Table 8. Source-drain diode
and Figure 1. Safe operating area
.
Minor text changes.
DS12513 - Rev 2 page 12/14
STW20N60M2-EP
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4.1
TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
DS12513 - Rev 2 page 13/14
STW20N60M2-EP
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DS12513 - Rev 2 page 14/14
