STGWT30HP65FB
Datasheet
Trench gate field-stop 650 V, 30 A high speed HB series IGBT
Features
TAB
3
2
1
TO-3P
C(2, TAB)
•
Maximum junction temperature: TJ = 175 °C
•
•
•
High speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
•
•
•
Tight parameter distribution
Safe paralleling
Positive VCE(sat) temperature coefficient
•
•
Low thermal resistance
Very fast soft recovery antiparallel diode
G(1)
Applications
•
E(3)
Power factor corrector (PFC)
NG1E3C2T
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an
optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.
Product status link
STGWT30HP65FB
Product summary
Order code
STGWT30HP65FB
Marking
GWT30HP65FB
Package
TO-3P
Packing
Tube
DS11375 - Rev 3 - July 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STGWT30HP65FB
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0 V)
650
V
Continuous collector current at TC = 25 °C
60
Continuous collector current at TC = 100 °C
30
Pulsed collector current
120
Gate-emitter voltage
±20
Transient gate-emitter voltage (tp ≤ 10 μs)
±30
Continuous forward current at TC = 25 °C
5
Continuous forward current at TC = 100 °C
5
IFP (3)
Pulsed forward current
10
A
PTOT
Total power dissipation at TC = 25 °C
260
W
TSTG
Storage temperature range
-55 to 150
Operating junction temperature range
-55 to 175
VCES
IC
ICP (1)
VGE
IF (2)
TJ
Parameter
A
A
V
A
°C
1. Pulse width limited by maximum junction temperature.
2. Limited by wires.
3. Pulsed forward current.
Table 2. Thermal data
Symbol
DS11375 - Rev 3
Parameter
Value
RthJC
Thermal resistance junction-case IGBT
0.58
RthJC
Thermal resistance junction-case diode
5
RthJA
Thermal resistance junction-ambient
50
Unit
°C/W
page 2/15
STGWT30HP65FB
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol
V(BR)CES
VCE(sat)
VF
Parameter
Test conditions
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Forward on-voltage
VGE = 0 V, IC = 2 mA
Min.
Typ.
650
1.55
VGE = 15 V, IC = 30 A, TJ = 125 °C
1.65
VGE = 15 V, IC = 30 A, TJ = 175 °C
1.75
IF = 5 A
2.0
IF = 5 A, TJ = 125 °C
1.85
IF = 5 A, TJ = 175 °C
1.75
Gate threshold voltage
VCE = VGE, IC = 1 mA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 30 A
VGE(th)
Max.
6
2.0
V
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ±20 V
±250
nA
Unit
Table 4. Dynamic characteristics
Symbol
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
Test conditions
VCE = 25 V, f = 1 MHz, VGE = 0 V
VCC = 520 V, IC = 30 A, VGE = 0 to 15 V
(see Figure 28. Gate charge test circuit)
Min.
Typ.
Max.
-
3659
-
-
101
-
-
76
-
-
149
-
-
25
-
-
62
-
Min.
Typ.
Max.
Unit
pF
nC
Table 5. IGBT switching characteristics (inductive load)
Symbol
td(off)
Parameter
Test conditions
Turn-off-delay time
VCE = 400 V, IC = 30 A, VGE = 15 V,
-
146
-
ns
Current fall time
RG = 10 Ω
-
23
-
ns
Eoff (1)
Turn-off switching energy
(see Figure 27. Test circuit for inductive
load switching)
-
293
-
µJ
td(off)
Turn-off-delay time
VCE = 400 V, IC = 30 A, VGE = 15 V,
-
158
-
ns
Current fall time
RG = 10 Ω, TJ = 175 °C
-
65
-
ns
Turn-off switching energy
(see Figure 27. Test circuit for inductive
load switching)
-
572
-
µJ
tf
tf
Eoff
1. Including the tail of the collector current.
DS11375 - Rev 3
page 3/15
STGWT30HP65FB
Electrical characteristics
Table 6. Diode switching characteristics (inductive load)
Symbol
DS11375 - Rev 3
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
140
-
ns
trr
Reverse recovery time
Qrr
Reverse recovery charge
IF = 5 A, VR = 400 V, VGE = 15 V,
-
21
-
nC
Irrm
Reverse recovery current
di/dt = 1000 A/µs
-
6.6
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
(see Figure 27. Test circuit for inductive
load switching)
-
430
-
A/µs
Err
Reverse recovery energy
-
1.6
-
µJ
trr
Reverse recovery time
-
200
-
ns
Qrr
Reverse recovery charge
IF = 5 A, VR = 400 V, VGE = 15 V,
-
47.3
-
nC
Irrm
Reverse recovery current
di/dt = 1000 A/µs, TJ = 175 °C
-
9.6
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
(see Figure 27. Test circuit for inductive
load switching)
-
428
-
A/µs
Err
Reverse recovery energy
-
3.2
-
µJ
page 4/15
STGWT30HP65FB
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Output characteristics (TJ = 25 °C)
IC
(A) VGE =15 V
VGE =13 V
100
Figure 2. Output characteristics (TJ = 175 °C)
IC
(A) VGE =15 V
VGE =13 V
100
GIPG280120141156FSR
VGE =11 V
80
GIPG280120141206FSR
VGE =11 V
80
60
60
VGE =9 V
VGE =9 V
40
40
20
20
0
0
1
2
3
4
VGE =7 V
VCE (V)
5
Figure 3. Transfer characteristics
IC
(A)
100
GIPG280120141330FSR
VCE = 6 V
0
0
VGE =7 V
1
2
3
4
5
VCE (V)
Figure 4. Collector current vs case temperature
GIPG280120141346FSR
IC
(A)
60
80
40
Tj = 175 °C
60
Tj = 25 °C
40
20
20
0
5
7
9
11
VGE (V)
Figure 5. VCE(sat) vs junction temperature
GIPG280120141440FSR
VCE(sat)
(V)
VGE = 15 V
2.2
IC = 60 A
0
VGE ≥ 15V, TJ ≤ 175 °C
0
150
GIPG280120141353FSR
100
50
1.4
IC = 15 A
DS11375 - Rev 3
100 125 150 175 TC (°C)
250
1.8
1.2
-50
75
Ptot
(W)
200
IC = 30 A
50
Figure 6. Total power dissipation vs case temperature
2.0
1.6
25
0
50
100
150
TJ (°C)
VGE ≥ 15V, TJ ≤ 175 °C
0
0
25
50
75 100 125 150 175 TC (°C)
page 5/15
STGWT30HP65FB
Electrical characteristics (curves)
Figure 7. Forward bias safe operating area
GIPG280120141450FSR
IC
(A)
Figure 8. Collector current vs switching frequency
IC
(A)
GIPG280120141713FSR
Vce(sat) limit
80
100
60
10 μs
10
100 μs
40
1 ms
1
10
1
TC = 100 °C
20
(single pulse Tc = 25 °C,
TJ ≤ 175 °C, VGE = 15 V)
0.1
TC = 80 °C
100
VCE (V)
Figure 9. Normalized VGE(th) vs junction temperature
AM16060v1
V GE(th)
(norm)
VCE = VGE, IC = 1 mA
Rectangular current shape
(duty cycle = 0.5, VCC = 400 V,
0 RG = 10 Ω, VGE = 0/15 V , Tj = 175 °C
100
101
102
f (kHz)
Figure 10. Normalized V(BR)CES vs junction temperature
AM16059v1
V(BR)CES
(norm)
1.1
IC = 2 mA
1.0
0.9
1.0
0.8
0.7
0.6
-50
0
50
100
150
T J (°C)
Figure 11. Switching energy vs temperature
E
(µJ)
GIPG280120141531FSRb
VCC = 400 V, VGE = 15 V,
Rg = 10 Ω, IC = 30 A,
EOFF
600
0.9
-50
0
50
100
T J (°C)
150
Figure 12. Switching energy vs gate resistance
E
(µJ)
1020
GIPG280120141535FSRb
VCC = 400 V, VGE = 15 V,
IC = 30 A, TJ = 175 °C
EOFF
820
620
400
420
200
220
0
20
DS11375 - Rev 3
40
60
80
100 120
140
160 TJ (°C)
20
3
10
17
24
31
38
45 RG (Ω)
page 6/15
STGWT30HP65FB
Electrical characteristics (curves)
Figure 13. Switching energy vs collector current
E
(µJ)
1200
GIPG280120141605FSRb
VCC = 400 V, VGE = 15 V
Rg = 10 Ω, TJ = 175 °C
Figure 14. Switching energy vs collector emitter voltage
E
(µJ)
GIPG280120141609FSRb
TJ = 175 °C, VGE = 15 V
Rg = 10 Ω, IC = 30 A
800
1000
EOFF
EOFF
600
800
600
400
400
200
200
0
0
20
40
Figure 15. Switching times vs collector current
t
(ns)
0
150
IC (A)
60
GIPG100720141533FSRb
TJ = 175 °C, VGE = 15 V,
RG = 10 Ω, VCC = 400 V
250
350
VCE (V)
450
Figure 16. Switching times vs gate resistance
t
(ns)
GIPG100720141549FSRb
TJ = 175 °C, VGE = 15 V,
IC = 30 A, VCC = 400 V
tdoff
tdoff
100
tf
100
10
tf
1
0
10
20
30
40
50
IC (A)
10
20
30
RG (Ω)
40
Figure 18. VCE(sat) vs collector current
Figure 17. Capacitance variations
C
(pF)
10
0
GIPG090720141358FSR
VCE(sat)
(V)
Cies
GIPG280120141446FSR
VGE = 15 V
2.4
2.2
1000
TJ = 175 °C
2.0
1.8
100
1.6
Coes
Cres
10
0.1
DS11375 - Rev 3
TJ = 25 °C
1
10
100
VCE (V)
TJ = -40 °C
1.4
1.2
15
30
45
60
IC (A)
page 7/15
STGWT30HP65FB
Electrical characteristics (curves)
Figure 19. Gate charge vs gate-emitter voltage
VGE
(V)
16
14
GIPG280120141455FSR
VCC = 520 V, IC = 30 A
IG = 1mA
Figure 20. Diode VF vs forward current
VF
(V)
2.6
IGBT110120161316DVF
T j = -40 °C
T j = 25 °C
12
2.0
10
8
1.4
T j = 175 °C
6
4
0.8
2
0
0
80
40
120
160
Qg (nC)
Figure 21. Reverse recovery current vs diode current
slope
Irrm
(A)
12
10
IGBT020820161120RRC
VCC = 400 V
VGE = 15 V, IF = 5 A
TJ = 175 °C
0.2
0
2
4
6
8
10
IF (A)
Figure 22. Reverse recovery time vs diode current slope
trr
(ns)
350
IGBT120120160820RRT
VCC = 400 V, VGE = 15 V,
IF = 5 A, Tj = 175 °C
300
8
250
6
200
4
150
2
0
0
300
600
900
1200 di/dt(A/μs)
Figure 23. Reverse recovery charge vs diode current
slope
IGBT020820161204RRQ
rr
0.5
VCC=400 V, VGE=15 V
IF = 5 A,TJ =175 °C
100
0
300
600
900
1200 di/dt (A/μs)
Figure 24. Reverse recovery energy vs diode current
slope
rr
55
IGBT020820161239RRE
VCC = 400 V,VGE = 15 V,
IF = 5 A,TJ = 175 °C
50
45
0.48
40
35
0.46
30
0.44
0
DS11375 - Rev 3
300
600
900
1200 di/dt(A/μs)
25
0
300
600
900
1200
di/dt(A/µs)
page 8/15
STGWT30HP65FB
Electrical characteristics (curves)
Figure 25. Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
-1
10
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
-2
10 -5
10
DS11375 - Rev 3
-4
10
-3
10
-2
10
-1
10
tp (s)
page 9/15
STGWT30HP65FB
Test circuits
3
Test circuits
Figure 27. Gate charge test circuit
Figure 26. Test circuit for inductive load switching
C
A
A
k
L=100 µH
G
E
B
B
3.3
µF
C
G
+
k
RG
1000
µF
VCC
k
D.U.T
k
E
k
k
AM01505v1
AM01504v1
Figure 28. Switching waveform
90%
10%
VG
90%
VCE
10%
tr(Voff)
tcross
90%
IC
td(on)
ton
td(off)
tr(Ion)
10%
tf
toff
AM01506v1
DS11375 - Rev 3
page 10/15
STGWT30HP65FB
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1
TO-3P package information
Figure 29. TO-3P package outline
8045950_3
DS11375 - Rev 3
page 11/15
STGWT30HP65FB
TO-3P package information
Table 7. TO-3P package mechanical data
Dim.
DS11375 - Rev 3
mm
Min.
Typ.
Max.
A
4.60
4.80
5.00
A1
1.45
1.50
1.65
A2
1.20
1.40
1.60
b
0.80
1.00
1.20
b1
1.80
2.00
2.20
b2
2.80
3.00
3.20
c
0.55
0.60
0.75
D
19.70
19.90
20.10
D1
13.70
13.90
14.10
E
15.40
15.60
15.80
E1
13.40
13.60
13.80
E2
9.40
9.60
9.90
e
5.15
5.45
5.75
L
19.80
20.00
20.20
L1
3.30
3.50
3.70
L2
18.20
18.40
18.60
ØP
3.30
3.40
3.50
ØP1
3.10
3.20
3.30
Q
4.80
5.00
5.20
Q1
3.60
3.80
4.00
page 12/15
STGWT30HP65FB
Revision history
Table 8. Document revision history
Date
Revision
11-Nov-2015
1
Changes
First release
Datasheet status promoted from preliminary to production data.
20-Jan-2017
2
Updated Features on cover page.
Updated Section 1: "Electrical ratings" and Section 2: "Electrical characteristics".
Minor text changes.
Updated Table 1. Absolute maximum ratings.
09-Jul-2019
3
Updated Section 4 Package information.
Minor text changes.
DS11375 - Rev 3
page 13/15
STGWT30HP65FB
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1
TO-3P package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
DS11375 - Rev 3
page 14/15
STGWT30HP65FB
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© 2019 STMicroelectronics – All rights reserved
DS11375 - Rev 3
page 15/15
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