SCTH60N120G2-7
Datasheet
Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an H²PAK-7 package
Gate (1)
Driver source (2)
TAB
1
H 2 PAK-7
7
Drain (TAB)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Features
Order code
SCTH60N120G2-7
V
DS
1200 V
R
DS(on)
max.
52 mΩ
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Source sensing pin for increased efficiency
I
D
60 A
Applications
• Switching mode power supply
• DC-DC converters
• Industrial motor control
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2 nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Product status link
SCTH60N120G2-7
Product summary
Order code SCTH60N120G2-7
Marking
Package
Packing
SCT60N120G2V
H²PAK-7
Tape and reel
DS13621 - Rev 2 - May 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
SCTH60N120G2-7
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
V
I
DS
GS
D
Parameter
Drain-source voltage
Gate-source voltage
Gate-source voltage (recommended operational values)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
I
DM
(1)
P
TOT
T stg
T
J
Drain current (pulsed)
Total power dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
1. Pulse width is limited by safe operating area.
Symbol
R thJC
R thJA
Table 2. Thermal data
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Value
1200
-10 to 22
-5 to 18
60
45
177
390
-55 to 175
A
A
W
°C
°C
Unit
V
V
Value
0.38
50
Unit
°C/W
°C/W
DS13621 - Rev 2 page 2/14
2
SCTH60N120G2-7
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 3. On/off states
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
Zero gate voltage drain current V
GS
= 0 V, V
DS
= 1200 V
Gate-body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= -10 to 22 V
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 18 V, I
D
= 30 A
Static drain-source on-resistance
V
GS
= 18 V, I
D
= 30 A, T
J
= 175 °C
Symbol
E on
E off
Parameter
Turn-on switching energy
Turn-off switching energy
Table 5. Switching energy (inductive load)
Test conditions
V
DD
= 800 V, I
D
= 40 A
R
G
= 4.7 Ω, V
GS
= -5 V to 18 V
Min.
Typ.
Max.
Unit
1200 V
1.9
3.0
35
10 µA
±100 nA
5.0
52
V mΩ
67
Symbol
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
Table 4. Dynamic
DS
Test conditions
= 800 V, f = 1 MHz, V f = 1 MHz, I
D
= 0 A
GS
= 0 V
V
DS
= 800 V, V
GS
= -5 to 18 V, I
D
= 30 A
-
-
-
Min.
Typ.
Max.
Unit
1969 pF
113 pF
-
-
20
1
94
22
36
-
-
-
-
nC nC pF
Ω nC
Min.
Typ.
Max.
Unit
617 µJ
188 µJ
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 800 V, I
D
= 30 A,
R
G
= 4.7 Ω, V
GS
= -5 to 18 V
Min.
Typ.
Max.
Unit
-
16
15
-
ns ns
-
32
14 -
ns ns
DS13621 - Rev 2 page 3/14
SCTH60N120G2-7
Electrical characteristics
Symbol
V
SD t rr
Q rr
I
RRM
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 7. Reverse SiC diode characteristics
Test conditions
I
SD
= 30 A, V
GS
= 0 V
I
SD
= 30 A, V
GS
= 0 V, di/dt = 2000 A/μs, V
DD
= 800 V
Min.
Typ.
Max.
Unit
3 V
17 ns
-
102
10 -
nC
A
DS13621 - Rev 2 page 4/14
SCTH60N120G2-7
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
GADG270420211458SOA
I
DM
10 2
DS(on)
in this area
10 1
R
DS(on)
max.
10 0
10 -1
T
T
J
= 175 °C
C
= 25 °C
Single pulse
10 -1 10 0 10 1 10 2 10 3 t p
=1µs t p
=10µs t p
=100µs t p
=1ms t p
=10ms
V
(BR)DSS
V
DS
(V)
Figure 3. Typical output characteristics (T
J
= 25 °C)
I
D
(A) V
GS
=14,16,18, 20V
GADG150220210833OC25
30
12 V 10 V
25
20
15
10
8 V
5
0
0 1 2 3 4 5 6 7
6 V
V
DS
(V)
Figure 5. Typical transfer characteristics
I
D
(A)
30
V
DS
= 8 V
GADG300420211544TCH
15
10
25
20
5
0
0 2
T
J
= 175 °C
4 6 8
T
J
= 25 °C
10 V
GS
(V)
Figure 2. Maximum transient thermal impedance
Z thJC
(°C/W) duty=0.5
0.4
0.3 0.2
GADG270420211458ZTH
10 -1
10 -2
0.05
0.1
R thJC
= 0.38 °C/W duty = t on
/ T
Single pulse t on
T
10 -3
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Typical output characteristics (T
J
= 175 °C)
I
D
(A)
30
25
GADG300420211543OC175
V
GS
= 12, 14,16,18, 20 V
10V
8V
20
15
10
6V
5
0
0 1 2 3 4 5 6 7
4V
V
DS
(V)
P
TOT
(W)
Figure 6. Total power dissipation
GADG270420211503PDT
300
T
J
= 175 °C
200
100
0
0 50 100 150 T
C
(°C)
DS13621 - Rev 2 page 5/14
SCTH60N120G2-7
Electrical characteristics (curves)
5
0
-5
0
600
400
200
0
0
Figure 7. Typical gate charge characteristics
V
GS
(V)
GADG270420211510QVG
15
V
DD
I
D
= 800 V
= 30 A
10
20 40 60 80 Q g
(nC)
Figure 9. Typical switching energy vs drain current
E
(µJ)
1200
V
DD
V
R
GS
G
= 800 V
= -5 to 18 V
= 4.7 Ω
GADG270420211513SLD
E tot
1000
800
E on
20 40 60
E off
I
D
(A)
Figure 8. Typical capacitance characteristics
C
(pF)
GADG270420211509CVR
10 3
C iss
10 2 f = 1 MHz
10 1
10 -1 10 0 10 1 10 2
C oss
C rss
V
DS
(V)
Figure 10. Typical switching energy vs temperature
E
(µJ)
V
DD
= 800 V, I
D
= 30 A,
GADG270420211514SLT
800
V
GS
= -5 to 18 V, R
G
= 4.7 Ω
E tot
600
E on
400
200
0
0 50 100 150
E off
T
J
(°C)
Figure 11. Typical switching energy vs gate resistance
E
(µJ)
800
I
D
= 30 A
V
DD
= 800 V
V
GS
= -5 to 18 V
GADG270420211515SLG
E tot
E on
600
400
E off
200
0
0 2 4 6 8 10 R
G
(Ω)
Figure 12. Normalized gate threshold vs temperature
V
GS(th)
(norm.)
GADG270420211504VTH
1.4
1.2
1.0
0.8
I
D
= 1 mA
0.6
0.4
-75 -25 25 75 125 175 T
J
(°C)
DS13621 - Rev 2 page 6/14
SCTH60N120G2-7
Electrical characteristics (curves)
Figure 13. Normalized breakdown voltage vs temperature
V
(BR)DSS
(norm.)
GADG270420211504BDV
1.06
1.04
I
D
= 1 mA
1.02
1.00
0.98
0.96
-75 -25 25 75 125 175 T
J
(°C)
Figure 14. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GADG270420211505RON
2.0
V
GS
= 18 V
1.6
1.2
0.8
0.4
-75 -25 25 75 125 175 T
J
(°C)
Figure 15. Typical reverse conduction characteristics
(T
J
= 25 °C)
I
D
(A)
GADG270420211508RCC25
-10
-20
V
GS
= -5 V V
GS
= 0 V
-30
V
GS
= 18 V
-40
-6 -5 -4 -3 -2 -1 V
SD
(V)
Figure 16. Typical reverse conduction characteristics
(T
J
= 175 °C)
I
D
(A)
GADG270420211509RCC175
-10
V
GS
= -5 V
-20
0 V
-30
V
GS
= 18 V
-40
-6 -5 -4 -3 -2 -1 V
SD
(V)
DS13621 - Rev 2 page 7/14
3
3.1
SCTH60N120G2-7
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
H²PAK-7 package information
Figure 17. H²PAK-7 package outline
DS13621 - Rev 2
DM00249216_4 page 8/14
Dim.
e2
E
F
H
H1
A
A1
C e e1
R
V
L3
M
L
L1
L2
SCTH60N120G2-7
H²PAK-7 package information
Table 8. H²PAK-7 package mechanical data mm
Min.
7.42
0.45
0.50
10.00
7.40
4.30
0.03
1.17
2.34
4.88
14.75
1.27
4.35
6.85
1.90
0.20
0°
Figure 18. H²PAK-7 recommended footprint
Max.
7.82
0.60
0.70
10.40
7.60
4.80
0.20
1.37
2.74
5.28
15.25
1.40
4.95
7.25
2.50
0.60
8°
Note: Dimensions are in mm.
DS13621 - Rev 2 footprint_DM00249216_4 page 9/14
SCTH60N120G2-7
Packing information
3.2
Packing information
T
Top cover tape
K0
B0
Figure 19. Tape outline
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
A0 P1
User direction of feed
D1
F
E
W
R
A
REEL DIMENSIONS
User direction of feed
Figure 20. Reel outline
40 mm min.
Access hole
At slot location
B
D
C
Full radius
Tape slot
In core for
Tape start
Bending radius
AM08852v2
T
N
G measured
At hub
DS13621 - Rev 2 page 10/14
Dim.
R
T
W
P0
P1
P2
A0
B0
D
D1
E
F
K0
SCTH60N120G2-7
Packing information
Table 9. Tape and reel mechanical data
Tape
11.4
4.8
3.9
11.9
1.9
Min.
10.5
15.7
1.5
1.59
1.65
50
0.25
23.7
mm
11.6
5.0
4.1
12.1
2.1
Max.
10.7
15.9
1.6
1.61
1.85
0.35
24.3
Dim.
C
D
G
A
B
N
T
Base quantity
Bulk quantity
Reel
Min.
1.5
12.8
20.2
24.4
100 mm
Max.
330
13.2
26.4
30.4
1000
1000
DS13621 - Rev 2 page 11/14
Revision history
Date
03-May-2021
25-May-2021
Version
1
2
Table 10. Document revision history
Changes
First release.
Modified
Table 3. On/off states .
Removed test circuits section.
Minor text changes.
SCTH60N120G2-7
DS13621 - Rev 2 page 12/14
SCTH60N120G2-7
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1
H²PAK-7 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.2
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
DS13621 - Rev 2 page 13/14
SCTH60N120G2-7
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DS13621 - Rev 2 page 14/14
