STGO30H60DLLFBAG
Datasheet
Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series
IGBT in a TO
‑
LL package
TAB
Features
TAB
G(1)
8
1
TO-LL type B
8
C(TAB)
E(2, 3, 4, 5, 6, 7, 8)
1
G1CTABE2345678
• AEC-Q101 qualified
• Maximum junction temperature: T
J
= 175 °C
• Logic level gate drive
• High-speed switching series
• Minimized tail current
• V
CE(sat)
= 1.6 V (typ.) @ I
C
= 30 A
• Low V
F
soft-recovery co-packaged diode
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance
Applications
• Automotive injection
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V
CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Product status link
STGO30H60DLLFBAG
Product summary
Order code STGO30H60DLLFBAG
Marking
Package
Packing
GO30H60DLL
TO-LL type B
Tape and reel
DS12913 - Rev 4 - January 2022
For further information contact your local STMicroelectronics sales office.
www.st.com
STGO30H60DLLFBAG
Electrical ratings
1
Electrical ratings
Symbol
V
CES
I
FP
(1)
P
TOT
T
STG
T
J
1. t p
<1 μs.
I
C
I
CP
(1)
V
GE
I
F
Table 1. Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Gate-emitter voltage
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
Total power dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Symbol
R thJC
R thJA
Table 2. Thermal data
Parameter
Thermal resistance, junction-to-case IGBT
Thermal resistance, junction-to-case diode
Thermal resistance, junction-to-ambient
Value
600
60
30
120
±10
60
30
120
263
-55 to 150
-55 to 175
A
A
W
°C
°C
A
A
V
Unit
V
A
Value
0.57
1.51
73
Unit
°C/W
°C/W
DS12913 - Rev 4 page 2/15
2
STGO30H60DLLFBAG
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol
V
(BR)CES
V
CE(sat)
V
F
V
GE(th)
I
CES
I
GES
Parameter
Collector-emitter breakdown voltage
Table 3. Static characteristics
Test conditions
V
GE
= 0 V, I
C
= 1 mA
Collector-emitter saturation voltage
Forward on-voltage
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
V
GE
= 5 V, I
C
= 30 A
V
GE
= 5 V, I
C
= 30 A, T
J
= 125 °C
V
GE
= 5 V, I
C
= 30 A, T
J
= 175 °C
I
F
= 30 A
I
F
= 30 A, T
J
= 125 °C
I
F
= 30 A, T
J
= 175 °C
V
CE
= V
GE
, I
C
= 1 mA
V
GE
= 0 V, V
CE
= 600 V
V
CE
= 0 V, V
GE
= ± 10 V
Min.
600
Typ.
Max.
Unit
V
1.6
1.7
1.75
1.4
1.35
1.25
1.8
2.0
1.7
V
V
2.5
25
±250
V
µA
µA
Symbol
C ies
C oes
C res
Q g
Q ge
Q gc
Table 4. Dynamic characteristics
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0 V
V
CC
= 520 V, I
C
= 30 A,
V
GE
= 5 V
-
-
-
Min.
-
-
-
Typ.
5000
120
75
110
16
42
-
-
-
Max.
-
-
-
Unit pF nC
Table 5. IGBT switching characteristics (inductive load)
Symbol t d(off) t f
E off
(1)
t d(off) t f
E off
(1)
Parameter
Turn-off delay time
Current fall time
Turn-off switching energy
Turn-off delay time
Current fall time
Turn-off switching energy
1. Including the tail of the collector current.
Test conditions
V
CE
= 400 V, I
C
= 30 A,
V
GE
= 5 V, R
G
= 10 Ω
V
CE
= 400 V, I
C
= 30 A,
V
GE
= 5 V, R
G
= 10 Ω,
T
J
= 175 °C
-
-
-
-
Min.
-
-
Typ.
402
15
540
434
24
660 -
-
-
-
Max.
-
-
µJ ns ns
µJ
Unit ns ns
DS12913 - Rev 4 page 3/15
STGO30H60DLLFBAG
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Total power dissipation vs temperature
P
TOT
(W) V
GE
GADG240120220950PDT
≥ 5 V, T
J
≤ 175 °C
250
200
150
100
50
0
25 75 125 175 T
C
(°C)
Figure 2. Maximum collector current vs temperature
I
C
(A)
60
V
GE
≥ 5 V, T
J
GADG240120220951CCT
≤ 175 °C
50
40
30
20
10
0
25 75
V
GE
= 4V
125
V
GE
= 3 V
175 T
C
(°C)
Figure 3. Typical output characteristics (T
J
= 25 °C)
I
C
(A)
100
GADG240120220951OC25
V
GE
= 4V
V
GE
= 3 V
80
V
GE
= 5 V
60
40
20
0
0 1 2 3 4 V
CE
(V)
Figure 5. Typical V
CE(sat)
vs temperature
V
CE(sat)
(V)
2.2
V
GE
= 5 V
GADG240120220952VCET
I
C
= 60 A
2.0
1.8
I
C
= 30 A
1.6
1.4
1.2
-75 -25 25
I
C
= 15 A
75 125 175 T
J
(°C)
Figure 4. Typical output characteristics (T
J
= 175 °C)
I
C
(A)
100
GADG240120220951OC175
V
GE
= 5 V V
GE
= 4V
V
GE
= 3 V
80
60
40
20
0
0 1 2 3
V
GE
= 2 V
4 V
CE
(V)
Figure 6. Typical V
CE(sat)
vs collector current
V
CE(sat)
(V)
3.2
V
GE
= 5 V
GADG240120220954VCEC
T
J
=175 °C
2.8
2.4
T
J
= 25 °C
2.0
T
J
= -50 °C
1.6
1.2
0.8
0 20 40 60 80 100 120 T
J
(°C)
DS12913 - Rev 4 page 4/15
STGO30H60DLLFBAG
Electrical characteristics (curves)
Figure 7. Collector current vs switching frequency
I
C
(A)
80
GADG250120221033CCS
Rectangular current shape
(duty cycle = 0.5, V
CC
= 400 V,
R
G
= 10 Ω, V
GE
T
J
= 175 °C
= 0 to 5 V,
60
T
C
= 80 °C
40
T
C
= 100°C
20
0
10 0 10 1 10 2 f (kHz)
80
60
40
20
0
1
Figure 9. Typical transfer characteristics
I
C
(A)
120
V
CE
=5 V
GADG240120220955TCH
100
T
J
= 25 °C
1.5
2 2.5
T
J
= 175 °C
3 V
GE
(V)
Figure 8. Forward bias safe operating area
I
C
(A)
GADG240120220955FSOA
10 2
10 1
10 0
10 -1
10 0
T
C
= 25 °C
T
J
≤ 175 °C single pulse
10 1 10 2 t p
=1 µs t p
=10 µs t p
=100 µs
V
(BR)CES t p
=1 ms
V
CE
(V)
Figure 10. Typical reverse diode forward characteristics
V
F
(V)
2.4
IGBT181020161526DVF
2.0
1.6
T
J
= -50 °C
1.2
T
J
= 25 °C
0.8
0.4
0
T
J
= 175 °C
20 40 60 80 100 I
F
(A)
Figure 11. Normalized gate threshold vs temperature
V
GE(th)
(Norm.)
GADG240120220959NVGE
I
C
= 1 mA
1.2
1.0
0.8
0.6
0.4
-75 -25 25 75 125 175 T
J
(°C)
Figure 12. Normalized breakdown voltage vs temperature
V
(BR)CES
(Norm.)
1.12
I
C
= 1 mA
GADG240120221000NVBR
1.08
1.04
1.00
0.96
0.92
0.88
-75 -25 25 75 125 175 T
J
(°C)
DS12913 - Rev 4 page 5/15
STGO30H60DLLFBAG
Electrical characteristics (curves)
Figure 13. Typical capacitance characteristics
C
(pF)
GADG240120221000CVR
10 3
C ies
10 2 f = 1 MHz
10 1
10 -1 10 0 10 1 10 2
C oes
C res
V
CE
(V)
Figure 14. Typical gate charge characteristics
V
GE
(V) V
CC
= 400 V, I
C
GADG240120221001GCGE
= 30 A, I
G
= 1.35 mA
10
8
6
4
2
0
0 40 80 120 160 200 Q g
(nC)
Figure 15. Typical switching energy vs collector current
E off
(mJ) 10
V
GE
= 5 V, T
J
= 175 ℃
1.6
GADG240120221001SLC
1.2
0.8
0.4
0.0
0 10 20 30 40 50 60 I
C
(A)
Figure 16. Typical switching energy vs gate resistance
E off
(mJ)
2.5
I
C
= 30 A,
V
GE
= 5 V, T
J
= 175 ℃
GADG240120221006SLG
2.0
1.5
1.0
0.5
0.0
0 10 20 30 40 R
G
(Ω)
Figure 17. Typical switching energy vs temperature
E off
(mJ) 10
V
GE
= 5 V, I
C
= 30 A
0.66
GADG240120221004SLT
0.62
0.58
0.54
0.50
-25 25 75 125 175 T
J
(°C)
Figure 18. Typical switching energy vs V
CE
E off
(mJ)
1.2
I
C
= 30 A,
V
GE
= 5 V, T
10
J
= 175 ℃
GADG240120221005SLV
1.0
0.8
0.6
0.4
0.2
0.0
100 200 300 400 500 V
CE
(V)
DS12913 - Rev 4 page 6/15
STGO30H60DLLFBAG
Electrical characteristics (curves)
0.1
0.05
Figure 19. Typical switching times vs collector current t
(ns)
GADG240120221007STC t d(off)
Figure 20. Typical switching times vs gate resistance t
(ns)
V
GE
= 5 V, T
J
I
C
= 30 A
= 175 ℃
GADG240120221008STR t d(off)
10 3
10 2 t f
10 1
V
GE
= 5 V, T
J
10
= 175 ℃
0 10 20 30 40 50 60 I
C
(A)
10 2 t f
10 1
0 10 20 30 40 R
G
(Ω)
Figure 21. Maximum transient thermal impedance for IGBT
Z thJC
(°C/W) duty=0.5
GADG2401202211418ZTH_IGBT
10 -1
0.1
0.05
0.4
0.3
0.2
10 -2
Single pulse
R thJC
= 0.57 °C/W duty = t on
/ T t on
T
10 -3
10 -6 10 -5 10 -4 10 -3 10 -2 tp (s)
Figure 22. Maximum transient thermal impedance for diode
Z thJC
(°C/W)
GADG2401202211419ZTH_diode
0.4
0.3
10 0 duty=0.5
0.2
0.1
0.05
10 -1
R thJC
= 1.51 °C/W duty = t on
/ T
Single pulse t on
10 -2
T
10 -6 10 -5 10 -4 10 -3 10 -2 tp (s)
DS12913 - Rev 4 page 7/15
3
3.1
STGO30H60DLLFBAG
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
TO-LL type B package information
Figure 23. TO-LL type B package outline
DS12913 - Rev 4
DM00276569_5_type_B page 8/15
DS12913 - Rev 4
Dim.
L1
L2
L3
L4
K
K1
L e
H
H1
H2
H3
D
D1
E
E1
E2
A b b1 b2 c
Table 6. TO-LL type B package mechanical data
Min.
4.03
2.70
1.45
0.55
0.45
1.00
0.05
1.10
11.48
7.00
3.34
3.11
10.28
3.15
9.70
9.31
8.35
2.20
0.60
9.70
0.20
0.40
0.50
10.43
3.30
9.90
9.46
8.50
1.20
11.73
7.15
3.59
3.26
4.18
1.60
0.70
0.60
1.15
mm
Typ.
2.30
0.80
9.80
STGO30H60DLLFBAG
TO-LL type B package information
Max.
10.58
3.45
10.10
9.61
8.65
2.40
0.90
9.90
0.50
0.60
1.30
11.88
7.30
3.84
3.41
4.33
1.75
0.85
0.75
1.30
0.40
page 9/15
STGO30H60DLLFBAG
TO-LL type B package information
Figure 24. TO-LL type B recommended footprint (dimensions are in mm)
DS12913 - Rev 4
DM00276569_5_FP_type_B page 10/15
3.2
TO-LL packing information
Figure 25. Carrier tape outline and dimensions
STGO30H60DLLFBAG
TO-LL packing information
Figure 26. Reel outline and dimensions
DS12913 - Rev 4 page 11/15
Figure 27. TO-LL orientation in tape pocket
STGO30H60DLLFBAG
TO-LL packing information
DS12913 - Rev 4 page 12/15
STGO30H60DLLFBAG
Revision history
Date
08-Feb-2019
11-Nov-2020
18-Oct-2021
25-Jan-2022
2
3
4
Table 7. Document revision history
Revision
1
Changes
First release.
Updated Section 3.1 TO-LL type B package information.
Added Section 3.2 TO-LL packing information.
Minor text changes.
Modified marking on cover page.
Modified Table 1. Absolute maximum ratings .
Updated Section 3.1 TO-LL type B package information.
Minor text changes.
Modified Features .
Modified Section 1 Electrical ratings
, Table 3. Static characteristics
and
Table 5. IGBT switching characteristics (inductive load)
.
Added
Section 2.1 Electrical characteristics (curves)
.
Minor text changes.
DS12913 - Rev 4 page 13/15
STGO30H60DLLFBAG
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1
TO-LL type B package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.2
TO-LL packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
DS12913 - Rev 4 page 14/15
STGO30H60DLLFBAG
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DS12913 - Rev 4 page 15/15
