STMicroelectronics STGIB30CH60TS-L Datasheet
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STGIB30CH60TS-L
SLLIMM™ - 2
nd
series
IPM, 3-phase inverter, 30 A, 600 V short-circuit rugged IGBTs
Datasheet
-
preliminary data
Applications
• 3-phase inverters for motor drives
• Home appliances such as washing machines, refrigerators, air conditioners and sewing machine
Description
Features
This second series of SLLIMM (small low-loss intelligent molded module) provides a compact, high performance AC motor drive in a simple, rugged design. It combines new ST proprietary control ICs (one LS and one HS driver) with the improved short-circuit rugged Trench Gate Field-
Stop IGBT, making it ideal for 3-phase inverters systems such as home appliances and air conditioners. SLLIMM™ is a trademark of
STMicroelectronics.
• IPM 30 A, 600 V 3-phase IGBT inverter bridge including 2 control ICs for gate driving and freewheeling diodes
• 3.3 V, 5 V TTL/CMOS inputs with hysteresis
• Internal bootstrap diode
• Under-voltage lockout of gate drivers
• Smart shutdown function
• Short-circuit protection
• Shutdown input/fault output
• Separate open emitter outputs
• Temperature sensor integrated
• Comparator for fault protection
• Short circuit rugged TGFS IGBTs
Obsolete Product(s) - Obsolete Product(s)
• 85 k Ω NTC UL 1434 CA 4 recognized
• Fully isolated package
• Isolation rating of 1500 Vrms/min
• SLLIMM UL 1557 recognition on going
Table 1. Device summary
Order code Marking Package Packaging
STGIB30CH60TS-L GIB30CH60TS-L SDIP2B-26L Tube
August 2014 DocID026594 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/22 www.st.com
Contents
Contents
STGIB30CH60TS-L
Internal schematic and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Smart shutdown function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Typical application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
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STGIB30CH60TS-L
1
Internal schematic and pin description
Internal schematic and pin description
Figure 1. Internal schematic diagram and pin configuration
9% 227X
9% 227Y
9% 227Z
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7
7
3
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6'
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762
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Internal schematic and pin description STGIB30CH60TS-L
6
7
4
5
8
9
Pin
1
2
3
10
11
12
13
14
19
20
21
15
16
17
18
Table 2. Pin description
Symbol
NC -
VBOOTu Bootstrap voltage for U phase
Description
VBOOTv Bootstrap voltage for V phase
CIN
GND
TSO
NW
NV
NU
W
VBOOTw Bootstrap voltage for W phase
HINu High-side logic input for U phase
HINv
HINw
High-side logic input for V phase
High-side logic input for W phase
VCCH
GND
High-side low voltage power supply
Ground
LINu
LINv
LINw
VCCL
SD
Low-side logic input for U phase
Low-side logic input for V phase
Low-side logic input for W phase
Low-side low voltage power supply
Shutdown logic input (active low) / open-drain (comparator output)
Comparator input
Ground
Temperature sensor output
Negative DC input for W phase
Negative DC input for V phase
Negative DC input for U phase
W phase output
22 V V phase output
23 U U phase output
24 P Positive DC input Obsolete Product(s) - Obsolete Product(s)
25 T2 NTC thermistor terminal 2
26 T1 NTC thermistor terminal 1
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STGIB30CH60TS-L Absolute maximum ratings
(T j
= 25°C unless otherwise noted).
Symbol
Table 3. Inverter parts
Parameter
V
CC
Supply voltage between P-N, -U,-V
V
CC(surge)
Supply voltage surge between P-N, -U,-V
Collector-emitter voltage each IGBT V
CES
I
C
I
CP
P
TOT
Continuous collector current each IGBT
Peak collector current each IGBT (less than 1ms) t scw
Total dissipation at T
C
=25°C each IGBT
Short circuit withstand time, V
CE
= 300V, T
J
V
CC
= V boot
= 15 V, V
IN
(1)
= 0 to 5 V
= 125 °C,
1.
Applied between HINx, LINx and GND for x = U, V, W
Value
450
500
600
30
60
-
5
Unit
V
A
A
V
V
W
µs
Symbol
V
CC
V
BOOT
V
OUT
Table 4. Control parts
Parameter
Supply voltage between V
CCH
-GND, V
CCL
-GND
Bootstrap voltage
Output voltage between U, V, W and GND
V
V
CIN
IN
Comparator input voltage
Logic input voltage applied between HINx, LINx and
GND
V
SD
/OD Open drain voltage
I
OD
V
TSO
Open drain sink current
Temperature sensor output voltage
Min
-0.3
-0.3
V
BOOT
-
20
-0.3
-0.3
-0.3
-
-0.3
Max
20
620
V
BOOT
+
0.3
15
15
15
10
7
V
V
V mA
V
Unit
V
V
V
Symbol
V
ISO
T
T
J
C
Parameter
Isolation withstand voltage applied between each pin and heat sink plate (AC voltage, t = 60sec.)
Power chips operating junction temperature
Module case operation temperature
Value
1500
-40 to 150
-40 to 125
Unit
Vrms
°C
°C
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Absolute maximum ratings
Symbol
R th(j-c)
Table 6. Thermal data
Parameter
Thermal resistance junction-case single IGBT
Thermal resistance junction-case single diode
STGIB30CH60TS-L
Value
-
2.8
Unit
°C/W
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STGIB30CH60TS-L Electrical characteristics
(T j
= 25°C unless otherwise noted).
Symbol Parameter
Table 7. Inverter parts
Test condition
I
CES
Collector-cut off current
V
CE
= 550 V, V
CC
= V boot
= 15 V
V
CE(sat)
V
F
Collector-emitter saturation voltage
V
CC
= V
Boot
= 15 V, V
IN
(1)
= 0 to 5 V,
I
C
= 30 A,
Diode forward voltage V
IN
(1)
= 0, I
C
= 30 A
Inductive load switching time and energy
(2)
Min Typ Max Unit
1.6
1.7
-
-
µA
V
V t on t con
Turn-on time
Cross-over time on -
t off
Turn-off time ns
E t
E coff t rr
ON
OFF
Cross-over time off
Reverse recovery time
Turn-on switching loss
Turn-off switching loss
V
DD
= 300 V, V
CC
= V boot
= 15 V,
V
IN
(1)
= 0 to 5 V, I
C
= 30 A
-
-
300
120
µJ
1.
Applied between HINx, LINx and GND for x = U, V, W
2.
t on
and t off
include the propagation delay time of the internal drive. t of IGBT itself under the internally given gate driving condition.
C(ON)
and t
C(OFF)
are the switching time
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Electrical characteristics
Figure 2. Switching time test circuit
STGIB30CH60TS-L
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V
Figure 3. Switching time definition
100% I
C
100% I
C t rr
CE
I
C
I
C
V
CE
V
IN V
IN t
ON
Obsolete Product(s) - Obsolete Product(s)
C(ON) t
OFF t
C(OFF)
10% V
CE
10% I
C V
IN(ON) 10% I
C
90% I
C
10% V
CE
V
IN(OFF)
(a) turn-on (b) turn-off
AM09223V1
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STGIB30CH60TS-L Electrical characteristics
Symbol
V
CC_hys
V il
V ih
I
INh
I
INl
Table 8. Control / protection parts
Test condition Parameter
V
CC
UV hysteresis
Low logic level voltage
Min Typ Max Unit
1.1
1.4
1.7
V
0.8
V
2 V High logic level voltage
IN logic “1” input bias current
IN logic “0” input bias current
IN x
=15V
IN x
=0V
150
1
µA
µA
High side
V
CCH_th(on)
V
CCH
UV turn-on threshold
V
CCH_th(off)
V
CCH
UV turn-off threshold
V
BS_hys
V
BS_th(on)
V
BS_th(off)
I
QBSU
V
BS
UV hysteresis
V
BS
UV turn-on threshold
V
BS
UV turn-off threshold
Under voltage V
BS quiescent current
V
BS
= 9 V, HINx
(1)
= 5V;
I
QBS
V
BS
quiescent current
V
CC
= 15 V,
HINx
(1)
= 5V
R
I
I qccu qcc
DS(on)
Low side
Under voltage quiescent supply current
Quiescent current
BS driver ON resistance
V
V
CC
CC
= 9 V, HINx
(1)
= 15 V, HINx
= 0
(1)
= 0
11 11.5
12
9.6 10.1
10.6
0.7
10.1
9.1
1
11
10
45
80
270
520
140
1.3
11.9
10.9
-
-
-
-
V
CCL_th(on)
V
CCL_th(off)
V
CCL
UV turn-on threshold
V
CCL
UV turn-off threshold
11 11.5
12
9.6
10.1
10.6
I qccu
Under voltage quiescent supply current
V
CC
= 10 V, SD pulled to
5V through R
CIN = LINx
1)
SD
= 10k Ω ,
= 0;
640 -
I qcc
Quiescent current
V
CC
= 15 V, SD = 5V,
CIN = LINx
1)
= 0;
740 Obsolete Product(s) - Obsolete Product(s) µA
V
SSD
Smart SD unlatch threshold 0.6
V
µA
V
V
V
V
µA
µA
µA
µA
Ω
V
V
V
I
I
SDh
SDl
SD logic “1” input bias current
SD logic “0” input bias current
SD =15V
SD =0V
1.
Applied between HINx, LINx and GND for x = U, V, W
150
1
µA
µA
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Electrical characteristics STGIB30CH60TS-L
Note:
Table 9. Sense comparator (V
CC
= 15 V, PGND=AGND=GND, unless otherwise is specified)
Symbol Parameter Test condition Min Typ Max Unit
I ib
Input bias current V
CIN
=1V 0 µA
500 mV V ref
Internal reference voltage t
V
OD d_comp
SR
Open drain low level output voltage
I od
=-5mA
Comparator delay
Slew rate
SD pulled to 5V through
R
SD
=10k
Ω
; measured applying a voltage step 0V-3.3V to Pin CIN
50% CIN to 90% SD
SD pulled to 5V through
R
SD
=10k
Ω
; C
L
=1nF through SD and ground;
90% SD to 10% SD
-
-
-
-
30
30
500 mV ns
V/µs
Comparator stay enabled even if V
CC
is in UVLO condition but higher than 4 V.
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STGIB30CH60TS-L Fault management
The device integrates an open-drain output connected to SD Pin. As soon as a fault occurs the open-drain is activated and LVGx outputs are forced low. Two types of fault can be pointed out:
•
Overcurrent (OC) sensed by the internal comparator (see more detail in
• Undervoltage on supply voltage (V
CC
);
Each fault enables the SD open drain for a different time; refer to the following Table 10:
.
Symbol
OC
UVLO
Parameter
Over-current event
Under-voltage lock out event
Table 10. Fault timing
Event time
≤
20
μ s
≥
20µs
≤
50
μ s
≥ 50µs until the VCC_LS exceed the
VCC_LS UV turn ON threshold
SD open-drain enable time result
20
μ s
OC time
50µs
UVLO time
Actually the device remains in a fault condition (SD at low logic level and LVGx outputs disabled) for a time also depending on RC network connected to SD pin. The network generate a time contribute that add up to the internal value.
Figure 4. Overcurrent timing (without contribution of RC network on SD)
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Fault management STGIB30CH60TS-L
Figure 5. UVLO timing (without contribution of RC network on SD)
GIPG120520141644FSR
The device integrates temperature sensor. A voltage proportional to die temperature is available on TSO pin. When this function is not used the Pin can be left floating.
The device integrates a comparator committed to the fault sensing function. The comparator input can be connected to an external shunt resistor in order to implement a simple overcurrent detection function.
The output signal of the comparator is fed to an integrated MOSFET with the open drain output available on SD input. When the comparator triggers, the device is set in shutdown state and its outputs are all set to low level.
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STGIB30CH60TS-L Fault management
Figure 6. Smart shutdown timing waveforms in case of overcurrent event
Obsolete Product(s) - Obsolete Product(s)
Note: R
ON_OD
=V
OD
/I
OD
see
; R
PD_SD
(typ) =125 k Ω
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Fault management STGIB30CH60TS-L
In common over-current protection architectures the comparator output is usually connected to the SD input and an RC network is connected to this SD line in order to provide a monostable circuit, which implements a protection time that follows the fault condition.
Differently from the common fault detection systems, the device Smart shutdown architecture allows to immediately turn-off the outputs gate driver in case of fault, by minimizing the propagation delay between the fault detection event and the actual outputs switch-off. In fact the time delay between the fault and the outputs turn off is no more dependent on the RC value of the external network connected to the pin.
In the smart shutdown circuitry, the fault signal has a preferential path which directly switches off the outputs after the comparator triggering.
At the same time the internal logic turns on the open drain output and holds it on until the SD voltage goes below the V
SSD
threshold and t oc
time is elapsed.
The driver outputs restart following the input pins as soon as the voltage at the SD pin reaches the higher threshold of the SD logic input.
The Smart shutdown system provides the possibility to increase the time constant of the external RC network (that is the disable time after the fault event) up to very large values without increasing the delay time of the protection.
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STGIB30CH60TS-L
5 Typical application circuit
Figure 7. Typical application circuit
Typical application circuit
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STGIB30CH60TS-L Recommendations
6 Recommendations
1.
Input signals HIN, LIN are active-high logic. A 500 k Ω (typ.) pull-down resistor is built-in for each high side input. To prevent input signal oscillation, the wiring of each input should be as short as possible and the use of RC filters (R1, C1) on each input signal is suggested. The filters should be done with a time constant of about 100 ns and must be placed as close as possible to the IPM input pins.
2. The bypass capacitor Cvcc (aluminum or tantalum) is recommended to reduce the transient circuit demand on the power supply. In addition, a decoupling capacitor C2
(100 to 220 nF, ceramic with low ESR) is suggested, to reduce high frequency switching noise distributed on the power supply lines. It must be placed as close as possible to each Vcc pin and in parallel to the bypass capacitor.
3. The use of RC filter (RSF, CSF) for preventing protection circuit malfunction is recommended. The time constant (RSF x CSF) should be set to 1 µs and the filter must be placed as close as possible to the CIN pin.
to MCU power supply (3.3/5 V) by a resistor higher than 1.8 k Ω in order to keep Ioad lower than 3 mA. The filter on SD has to be sized to get a desired re-starting time after a fault event and placed as close as possible to the SD pin.
5. To increase the noise immunity of the NTC thermistor or/and TSO thermal sensor, it is recommended to parallel a decoupling capacitor (COT and CTSO), whose values must be between 10 and 100 nF and placed close to the MCU.
6. The decoupling capacitor C3 (100 to 220 nF, ceramic with low ESR), in parallel to each
Cboot, is recommended in order to filter high frequency disturbances.
7. The decoupling capacitor C4 (100 to 220 nF, ceramic with low ESR) in parallel to the electrolytic capacitor Cvdc is recommended, in order to prevent surge destruction. Both capacitors C4 and Cvdc should be placed as close as possible to the IPM (C4 has priority over Cvdc).
8. By integrating an application-specific type HVIC inside the module, direct coupling to the MCU terminals without an opto-coupler is possible.
9. Low inductance shunt resistors should be used for phase leg current sensing
10. In order to avoid malfunctions, the wiring between N pins, the shunt resistor and
PWR_GND should be as short as possible.
11. It is recommended to connect SGN_GND to PWR_GND at only one point (near the terminal of shunt resistor), in order to avoid any malfunction due to power ground fluctuation.
12. Bootstrap negative electrodes should be connected to U,V,W terminals directly and separated from the main output wires.
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STGIB30CH60TS-L NTC thermistor
Symbol
R
25
R
125
B
T
Parameter
Resistance
Resistance
B-constant
Operating temperature range
Table 11. NTC thermistor
Test condition
T = 25°C
T = 100°C
T = 25°C to 100°C
Figure 8. NTC resistance vs. temperature
Min Typ Max Unit
85
2.6
4092
-
-
k Ω k Ω
K
-40 125 °C
N
&
*,3*)65
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NTC thermistor
Nȍ
Figure 9. NTC resistance vs. temperature - zoom
STGIB30CH60TS-L
7\S
0LQ
0D[
&
*,3*)65
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STGIB30CH60TS-L
8 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
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Package mechanical data STGIB30CH60TS-L
Figure 10. SDIP2B-26L type L mechanical drawing
8450802_B
Ref.
Table 12. SDIP2B-26L type L mechanical dimensions
(1)
Dimensions Ref.
Dimensions Ref.
Dimensions
A 38.00 ± 0.50
C1 5.50 ± 0.50
E1 3.75 ± 0.30
A1 1.22 ± 0.25
C2 14.00 ± 0.50
E2 1.80
A2
A3
1.22 ± 0.25
35.00 ± 0.30
e e1
3.556 ± 0.200
1.778 ± 0.200
f f1
0.60 ± 0.15
0.50 ± 0.15
c 1.50 ± 0.05
e2 7.62 ± 0.20
F 2.10 ± 0.15
B
B1
B2
B3
24.00 ± 0.50
12.00
14.40 ± 0.50
29.40 ± 0.50
e3 e4
D
D1
C 3.50 ± 0.20
E
1.
All dimensions are expressed in millimeters.
5.08 ± 0.20
2.54 ± 0.20
28.95 ± 0.50
3.025 ± 0.300
12.40 ± 0.50
F1
R
T
V
1.10 ± 0.15
1.60 ± 0.20
0.400 ± 0.025
0° / 5°
20/22 DocID026594 Rev 2
STGIB30CH60TS-L
Date
23-Jun-2014
27-Aug-2014
Table 13. Document revision history
Revision Changes
1
2
Initial release.
Updated Table 1: Device summary .
Revision history
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STGIB30CH60TS-L
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Obsolete Product(s) - Obsolete Product(s)
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2014 STMicroelectronics – All rights reserved
22/22 DocID026594 Rev 2
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