STB130NS04ZB-1
Automotive-grade N-channel clamped, 7 m
Ω
typ., 80 A fully protected Mesh overlay™ Power MOSFET in a I
2
PAK package
Datasheet
-
production data
7$%
Features
Type V
DS
STB130NS04ZB-1 Clamped
R
DS(on) max.
9 m
Ω
I
D
80 A
,3$.
Figure 1. Internal schematic diagram
• Designed for automotive applications and
AEC-Q101 qualified
• 100% avalanche tested
• Low capacitance and gate charge
• 175°C maximum junction temperature
Applications
•
High switching current
•
Linear applications
Description
This fully clamped MOSFET is produced using
ST’s latest advanced Mesh overlay process, which is based on an innovative strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions, such as those encountered in the automotive environment. The device is also well-suited for other applications where extra ruggedness is required.
Order code
STB130NS04ZB-1
September 2014
This is information on a product in full production.
Table 1. Device summary
Marking
B130NS04ZB
Package
I
2
PAK
DocID026896 Rev 1
Packaging
Tube
1/12 www.st.com
3
4
5
1
2
Contents
Contents
STB130NS04ZB-1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 DocID026896 Rev 1
STB130NS04ZB-1 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DG
I
GS
I
DM
(1)
P
TOT
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain gate current (continuous)
C
C
= 25°C
= 100°C
Gate source current (continuous)
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
ESD
Gate-source human body model
C=100 pF, R=1.5 k Ω
T
J
T stg
Operating junction temperature
Storage temperature
1.
Pulse width limited by safe operating area.
Value
4
-55 to 175
Clamped
Clamped
80
60
± 50
± 50
320
300
2.0
Symbol
R thj-case
R thj-a
Table 3. Thermal data
Parameter
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Value
0.50
62.5
Unit
°C/W
°C/W
Unit
V
V
A
A mA mA
A
W
W/°C kV
°C
Symbol
I
AS
E
AS
Table 4. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=30V)
Value
80
500
Unit
A mJ
DocID026896 Rev 1 3/12
12
Electrical characteristics STB130NS04ZB-1
4/12
(T
CASE
=25°C unless otherwise specified)
Symbol Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
V
DSS
GSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate-source breakdown voltage
Gate threshold voltage
Static drain-source on resistance
Table 5. On/off states
Test conditions
I
D
= 1 mA, V
GS
= 0
-40 < Tj < 175 °C
V
DS
= 16 V
V
DS
= 16 V,T j
= 125 °C
V
GS
= ±10 V
I
GS
= ± 100 μ A
V
DS
= V
GS
= I
D
= 1 mA
V
GS
= 10 V ,I
D
= 40 A
Min.
Typ.
Max.
Unit
33
10
100
10
V
µA
µA nA
18
2
7
4
9
V
V m Ω
Table 6. Dynamic
Symbol g fs
(1)
C iss
C oss
C rss
Parameter Test conditions
Forward transconductance V
DS
=15V, I
D
= 40A
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
Q
Q g gs
Total gate charge
Gate-source charge
V
DD
=20V, I
D
= 80A
V
GS
=10V
(see Figure 15)
Q gd
Gate-drain charge
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
-
-
-
-
Min.
Typ.
Max.
Unit
-
-
50
2700
1275
S pF pF
285 pF
80 105 nC
20 nC
27 nC
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
V
DD
= 17.5 V, I
D
= 40 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 14)
Min.
Typ.
Max.
Unit
-
-
-
-
40
10
220
100
-
-
-
ns ns ns ns
DocID026896 Rev 1
STB130NS04ZB-1 Electrical characteristics
Symbol Parameter
Table 8. Source drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
I
SD
=80A, V
GS
=0
I
SD
=80A, di/dt = 100A/µs,
V
DD
=25V, Tj=150°C
(see Figure 16)
-
-
-
-
-
Min.
Typ.
Max Unit
80
320
1.5
90
0.18
A
A
V ns
µC
4 A
DocID026896 Rev 1 5/12
12
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
STB130NS04ZB-1
Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
6/12 DocID026896 Rev 1
STB130NS04ZB-1 Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Normalized on resistance vs temperature
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Source-drain diode forward characteristics
Figure 12. Capacitance variations Figure 13. Normalized B
VDSS
vs temperature
DocID026896 Rev 1 7/12
12
Test circuit
3 Test circuit
STB130NS04ZB-1
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CONST
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
AM01468v1
Figure 16. Test circuit for inductive load switching and diode recovery times
47k
Ω
P
W
1k
Ω
AM01469v1
Figure 17. Unclamped Inductive load test circuit
25 Ω
G
D
A
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ F
1000
μ F
V
DD
V i
AM01470v1
Figure 18. Unclamped inductive waveform
V
D
I
D
L
2200
μ F
3.3
μ F
V
DD
D.U.T.
P w
AM01471v1
Figure 19. Switching time waveform
8/12 DocID026896 Rev 1
STB130NS04ZB-1
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
DocID026896 Rev 1 9/12
12
Package mechanical data
DIM.
E
L
L1
L2
D e e1
A
A1 b b1 c c2
STB130NS04ZB-1
Table 9. I²PAK (TO-262) mechanical data mm.
typ min.
8.95
2.40
4.95
10
13
3.50
1.27
4.40
2.40
0.61
1.14
0.49
1.23
Figure 20. I²PAK (TO-262) drawing max.
9.35
2.70
5.15
10.40
14
3.93
1.40
4.60
2.72
0.88
1.70
0.70
1.32
10/12 DocID026896 Rev 1
0004982_Rev_H
STB130NS04ZB-1
Date
16-Sep-2014
Revision
1
Table 10. Revision history
Changes
First release.
Revision history
DocID026896 Rev 1 11/12
12
STB130NS04ZB-1
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12/12 DocID026896 Rev 1
