STMicroelectronics STD30N6LF6 Datasheet
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Annonce
STD30N6LF6
7$%
'7$%
Automotive N-channel 60 V, 23 m
Ω
typ., 25 A
STripFET F6 Power MOSFET in a DPAK package
Datasheet
-
preliminary data
Features
'3$.
Figure 1. Internal schematic diagram
Order code
STD30N6LF6
V
DS
60 V
R
DS(on)
max.
30 m Ω
• Designed for automotive applications
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
I
D
25 A
Applications
•
Very low on-resistance
•
Very low gate charge
•
High avalanche ruggedness
•
Low gate drive power loss
*
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all packages.
6
$0Y
Order code
STD30N6LF6
Marking
60N6LF6
Packages
DPAK
Packaging
Tape and reel
August 2014 DocID026825 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/13 www.st.com
Contents
Contents
STD30N6LF6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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STD30N6LF6 Electrical ratings
Symbol
V
DS
V
GS
I
D
I
D
I
DM
P
TOT
T stg
T j
Table 2. Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Storage temperature
Operating junction temperature
Value
60
± 20
25
17.5
100
40
- 55 to 175
Symbol
Table 3. Thermal data
Parameter
R thj-case
R thj-pcb
(1)
Thermal resistance junction-case max
Thermal resistance junction-pcb max
1.
When mounted on 1 inch
2
FR-4 board, 2 oz Cu
Value
3.75
50
Unit
°C/W
°C/W
Unit
A
A
A
V
V
W
°C
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Electrical characteristics STD30N6LF6
(T
CASE
= 25 °C unless otherwise specified)
Symbol Parameter
V
(BR)DSS
Drain-source breakdown voltage (V
GS
= 0)
V
I
I
DSS
GSS
GS(th)
Zero gate voltage
Drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
Gate threshold voltage
R
DS(on)
Static drain-source on-resistance
Table 4. On/off states
Test conditions
I
D
= 250 µA
V
DS
= 60 V
V
DS
= 60 V, T
C
=125 °C
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 12 A
V
GS
= 4.5 V, I
D
= 12 A
Min.
Typ.
Max.
Unit
60
1
23
28
1
100
± 100 nA
V 2.5
30
36 m
Ω
V
µA
µA
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
V
V
DD
GS
= 30 V, I
= 4.5V
D
= 25 A,
-
-
-
-
Min.
Typ.
Max.
Unit
-
1430
84
-
pF pF
62
13
TBD
TBD -
-
-
pF nC nC nC
Table 6. Switching times
Symbol Parameter Test conditions Min.
Typ.
Max.
Unit
Obsolete Product(s) - Obsolete Product(s) t r
TBD -
Rise time
V
DD
R
G
= 30 V, I
D
= 12.5 A
= 4.7 Ω V
GS
= 4.5 V
TBD ns ns t d(off)
Turn-off-delay time TBD ns t f
Fall time TBD ns
4/13 DocID026825 Rev 1
STD30N6LF6 Electrical characteristics
Symbol Parameter
Table 7. Source drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Current limited by package.
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
I
SD
= 25 A, V
GS
= 0
I
SD
= 25 A, V
DD
= 48 V di/dt = 100 A/µs,
T j
= 150 °C
-
-
-
-
-
-
Min.
Typ.
Max Unit
25
100
1.3
TBD
TBD
TBD
A
A
V ns nC
A
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Package mechanical data
3 Package mechanical data
STD30N6LF6
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
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STD30N6LF6 Package mechanical data
Figure 2. DPAK (TO-252) type A drawing
Obsolete Product(s) - Obsolete Product(s)
B4
DocID026825 Rev 1 7/13
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Dim.
E1 e e1
H
L
L1
L2
L4
R
V2 b4 c c2
D
D1
E
A
A1
A2 b
Package mechanical data STD30N6LF6
Table 8. DPAK (TO-252) type A mechanical data mm
Typ.
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
5.10
6.40
4.70
2.28
4.40
9.35
1.00
2.80
0.80
0.60
0.20
0°
6.60
4.60
10.10
1.50
1.00
8°
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
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STD30N6LF6
Figure 3. DPAK footprint
(a)
Package mechanical data
)3B4
Obsolete Product(s) - Obsolete Product(s) a.
All dimensions are in millimeters
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Packaging mechanical data
4 Packaging mechanical data
T
Top cover tape
Figure 4. Tape for DPAK (TO-252)
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
B1
K0
For machine ref. only including draft and radii concentric around B0
B0
A0 P1
User direction of feed
D1
STD30N6LF6
F
E
W
User direction of feed
R
Bending radius
AM08852v1
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STD30N6LF6
A
Packaging mechanical data
REEL DIMENSIONS
Figure 5. Reel for DPAK (TO-252)
40mm min.
Access hole
At slot location
B
D
C
T
N
Full radius Tape slot in core for tape start 25 mm min.
width
G measured at hub
AM08851v2
Table 9. DPAK (TO-252) tape and reel mechanical data
Tape Reel mm mm
Dim.
Dim.
Min.
Max.
Min.
R
T
W
A0
B0
B1
D
D1
E
F
6.8
10.4
1.5
1.5
1.65
7.4
7
10.6
12.1
1.6
1.85
7.6
A
B
C
D
G
N
T
K0
P0
2.55
3.9
2.75
4.1
Base qty.
P1
P2
7.9
1.9
8.1
2.1
Bulk qty.
1.5
12.8
20.2
16.4
50
40
0.25
15.7
0.35
16.3
Max.
330
13.2
18.4
22.4
2500
2500
DocID026825 Rev 1 11/13
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Revision history
Date
26-Aug-2014
Revision
Table 10. Document revision history
Changes
1 Initial release.
STD30N6LF6
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12/13 DocID026825 Rev 1
STD30N6LF6
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2014 STMicroelectronics – All rights reserved
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