STF13N95K3, STFI13N95K3,
STP13N95K3, STW13N95K3
N-channel 950 V, 0.68
Ω typ., 10 A Zener-protected SuperMESH3™
Power MOSFET in TO-220FP, I
2
PAKFP, TO-220 and TO-247
Datasheet
−
production data
Features
Order codes V
DSS
R
DS(on) max I
D
STF13N95K3
STFI13N95K3
950 V < 0.85
Ω
10 A
STP13N95K3
STW13N95K3
P
TOT
40 W
190 W
■
■
■
■
■
Gate charge minimized
Extremely large avalanche performance
100% avalanche tested
Very low intrinsic capacitance
Zener-protected
TAB
TO-220FP
TO-220
I
2
PAKFP
1
2
3
TO-247
Applications
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to
STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Figure 1.
Internal schematic diagram
D(2 or TAB)
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order codes
STF13N95K3
STFI13N95K3
STP13N95K3
STW13N95K3
Marking
13N95K3
Package
TO-220FP
I
2
PAKFP
TO-220
TO-247
Packaging
Tube
June 2012
This is information on a product in full production.
Doc ID15685 Rev 3 1/19 www.st.com
19
3
4
5
1
2
Contents
Contents
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Electrical ratings
.
Table 2.
Absolute maximum ratings
Symbol Parameter
V
DS
V
GS
I
D
I
D
I
DM
(2)
P
TOT
Drain source voltage
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
E
V
I
AR
AS
ISO
Total dissipation at T
C
= 25 °C
Max current during repetitive or single pulse avalanche (pulse width limited by
T jmax
)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V)
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s; TC = 25 °C)
Peak diode recovery voltage slope dv/dt
(3)
T j
T stg
Operating junction temperature
Storage temperature
1.
Limited by maximum junction temperature.
2.
Pulse width limited by safe operating area.
3.
I
SD
≤
10 A, di/dt
≤
400 A/µs, V
Peak
≤
V
(BR)DSS.
TO-220
TO-247
Value
TO-220FP
I
2
PAKFP
950
± 30
10
6
40
190
10
(1)
6
(1)
40
(1)
40
13
Unit
V
V
A
A
A
W
A
400
9
- 55 to 150
2500 mJ
V
V/ns
°C
Table 3.
Thermal data
Symbol Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Value
TO-220 TO-247
62.5
0.66
50
TO-220FP
I
2
PAKFP
3.13
62.5
Unit
°C/W
°C/W
Doc ID15685 Rev 3 3/19
Electrical characteristics STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
(T
CASE
= 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol Parameter Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on- resistance
I
D
= 1 mA, V
GS
= 0
V
DS
= 950V,
V
DS
= 950V, Tc=125 °C
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 100 µA
V
GS
= 10 V, I
D
= 5 A
Min.
Typ.
Max.
Unit
950
3
1
50
±10 µA
V
µA
µA
4 5
0.68
0.85
V
Ω
Table 5.
Symbol
Dynamic
Parameter Test conditions Min.
Typ.
Max.
Unit
C
C
C iss oss rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=100 V, f=1 MHz, V
GS
=0 -
1620
117
1.2
pF pF pF
C
C o(tr)
(1) o(er)
(2)
Equivalent capacitance time related
V
GS
= 0, V
DS
= 0 to 760 V
Equivalent capacitance energy related
-
115
131 -
pF pF
R
G
Q g
Q gs
Q gd
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge f = 1MHz open drain
V
V
DD
GS
(see
= 760 V, I
=10 V
Figure 20
D
)
= 10 A
-
2.3
51
10
30
-
-
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as C oss
when
V
DS
increases from 0 to 80% V
DSS
2.
Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V
DS
increases from 0 to 80% V
DSS
Ω nC nC nC
4/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Table 6.
Symbol t d(on) t r t d(off) t f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Electrical characteristics
Test conditions
V
DD
= 475 V, I
D
= 5 A,
R
G
=4.7 Ω , V
GS
=10 V
(see Figure 22
)
Min.
Typ.
Max.
Unit
-
18
16
50
21
ns ns ns ns
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
V
SD
(1)
I
I t
Q t
Q rr rr
RRM rr rr
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 10 A, V
GS
=0
I
SD
= 10 A, V
DD
= 60 V di/dt = 100 A/µs,
(see
Figure 21 )
I
SD
= 10 A,V
DD
= 60 V di/dt=100 A/µs,
Tj=150 °C (see
Figure 21 )
1.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min.
Typ.
Max.
Unit
-
-
10
40
1.6
-
500
9
36 mA
A
V ns
µ C
A
-
624
11
37 ns
µ C
A
Table 8.
Symbol
BV
GSO
Gate-source Zener diode
Parameter Test conditions Min.
Typ.
Max.
Unit
Gate-source breakdown voltage Igs ± 1mA, (open drain) 30 V
The built-in-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID15685 Rev 3 5/19
Electrical characteristics STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
2.1 Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220FP and I
2
PAKFP
!-V
)
$
!
Figure 3.
Thermal impedance for TO-220FP and I
2
PAKFP
/PER
,IMITEDB
S
S
MS
MS
4J #
4C #
3INGLE
PULSE
6
$3
6
Figure 4.
Safe operating area for TO-220
!-V
)
$
!
Figure 5.
Thermal impedance for TO-220
/PER
,IMITEDB
$3ON
S
S
MS
MS
4J #
4C #
3INGLE
PULSE
6 $3 6
Figure 6.
Safe operating area for TO-247
!-V
) $
!
Figure 7.
Thermal impedance for TO-247
S
$3ON
S
MS
MS
4J #
4C #
3INGLE
PULSE
6 $3 6
6/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Figure 8.
Output characteristics
) $ !
6 '3 6
!-V
) $ !
Electrical characteristics
Figure 9.
Transfer characteristics
6
$3
6
!-V
6
6
6
6 $3 6 6 '3 6
Figure 10.
Gate charge vs gate-source voltage Figure 11.
Static drain-source on-resistance
6
'3
6
!-V
6
$3
6
2 $3ON
/HM
!-V
6
$3
6 $$ 6
6 '3 6
) $ !
Figure 12.
Capacitance variations
#
P&
1 G N# ) $ !
!-V
Figure 13.
Output capacitance stored energy
!-V
% OSS
*
#ISS
#OSS
#RSS
6 $3 6 6 $3 6
Doc ID15685 Rev 3 7/19
Electrical characteristics STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Figure 14.
Normalized gate threshold voltage vs temperature
!-V
6 '3TH
NORM
Figure 15.
Normalized on-resistance vs temperature
!-V
2 $3ON
NORM
4 * # 4 * #
Figure 16.
Source-drain diode forward characteristics
!-V
6
3$
6
Figure 17.
Normalized B
VDSS
vs temperature
"6 $33
NORM
!-V
4 * #
4 * #
4 * #
) 3$ !
Figure 18.
Maximum avalanche energy vs starting Tj
!-V
% !3
M*
) $ !
6
$$
6
4 * #
8/19
4 * #
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
3 Test circuits
Test circuits
Figure 19.
Switching times test circuit for resistive load
Figure 20.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
µ
F
3 .
3
µ
F
V
DD
V i
=20V=V
GMAX
2200
µ F
I
G
=CON S T
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 21.
Test circuit for inductive load switching and diode recovery times
Figure 22.
Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 µ H
3 .
3
µ F
1000
µ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
µ F
3 .
3
µ F
V
DD
P w
AM01470v1
Figure 23.
Unclamped inductive waveform
V
(BR)D SS
V
D
Figure 24.
Switching time waveform t on t off t r td on td off t f
AM01471v1
I
DM
90 %
90 %
10 %
I
D 0
10 % V
D S
V
DD
V
DD
90 %
V
G S
AM01472v1
0
10 %
AM0147 3 v1
Doc ID15685 Rev 3 9/19
Package mechanical data
4
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
10/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
G1
H
L2
L3
L4
L5
L6
L7
Dia
E
F
F1
F2
G
A
B
D
Table 9.
Dim.
TO-220FP mechanical data
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3 mm
Typ.
16
Package mechanical data
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
Doc ID15685 Rev 3 11/19
Package mechanical data STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Figure 25.
TO-220FP drawing
12/19 Doc ID15685 Rev 3
7012510_Rev_K_B
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Table 10.
I
2
PAKFP mechanical data
Dim.
F
F1
G
H
L1
L2
L3
L4
L5
L6
A
B
D
D1
E
4.95
10.00
21.00
13.20
10.55
2.70
0.85
7.30
Figure 26.
I
2
PAKFP drawing
Min.
4.40
2.50
2.50
0.65
0.45
0.75
mm
Typ.
-
Package mechanical data
Max.
1.00
1.20
5.20
10.40
23.00
14.10
4.60
2.70
2.75
0.85
0.70
10.85
3.20
1.25
7.50
Doc ID15685 Rev 3
REV!
13/19
Package mechanical data STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
D1
E e e1
F
H1
J1
L
L1
A b b1 c
D
Table 11.
TO-220 type A mechanical data
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
L20
L30
∅
P
Q
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
mm
Typ.
1.27
16.40
28.90
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
14/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Figure 27.
TO-220 type A drawing
Package mechanical data
00159 88 _typeA_Rev_ S
Doc ID15685 Rev 3 15/19
Package mechanical data STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
A
A1 b b1 b2 c
D
E e
L
L1
L2
∅
P
∅ R
S
Table 12.
TO-247 mechanical data
Dim.
Min.
0.40
19.85
15.45
5.30
14.20
3.70
4.85
2.20
1.0
2.0
3.0
3.55
4.50
5.30
mm.
Typ.
5.45
18.50
5.50
Max.
0.80
20.15
15.75
5.60
14.80
4.30
5.15
2.60
1.40
2.40
3.40
3.65
5.50
5.70
16/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Figure 28.
TO-247 drawing
Package mechanical data
0075 3 25_G
Doc ID15685 Rev 3 17/19
Revision history STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Table 13.
Document revision history
Date Revision
15-May-2009
02-Sep-2010
21-Jun-2012
1
2
3
Changes
First release.
Document status promoted from preliminary data to datasheet.
Added new device in I²PAKFP.
Table 1: Device summary
,
Table 2: Absolute maximum ratings
,
Table 3: Thermal data ,
Figure 2: Safe operating area for TO-
220FP and I
220FP and I
2
2
PAKFP
,
Figure 3: Thermal impedance for TO-
PAKFP
have been modified accordingly.
Table 10: I
2
PAKFP mechanical data and Figure 26: I
2
PAKFP drawing
have been added.
18/19 Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
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Doc ID15685 Rev 3 19/19
