STGWA30H65DFB
Trench gate field-stop IGBT, HB series
650 V, 30 A high speed in a TO-247 long leads package
Datasheet - production data
Features
Maximum junction temperature: T
J
= 175 °C
High speed switching series
Minimized tail current
Low saturation voltage: V
CE(sat)
= 1.55 V
(typ.) @ I
C
= 30 A
Tight parameter distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
Figure 1: Internal schematic diagram
C (2)
G (1)
Sc12850_no_tab
Order code
STGWA30H65DFB
E (3)
Applications
Photovoltaic inverters
High frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive
V
CE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Table 1: Device summary
Marking
GWA30H65DFB
Package
TO-247 long leads
Packing
Tube
November 2017 DocID030638 Rev 2
This is information on a product in full production.
1/16 www.st.com
Contents
Contents
STGWA30H65DFB
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 7
3 Test circuits ................................................................................... 12
4 Package mechanical data ............................................................. 13
4.1
TO-247 long leads package information ......................................... 13
5 Revision history ............................................................................ 15
2/16 DocID030638 Rev 2
STGWA30H65DFB
1 Electrical ratings
Symbol
V
CES
I
C
I
CP
(1)
V
GE
I
F
I
FP
(1)
P
TOT
T
STG
T
J
Table 2: Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GE
= 0 V)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Gate-emitter voltage
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)
Pulse width limited by maximum junction temperature.
Symbol
Table 3: Thermal data
Parameter
R thJC
R thJC
R thJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Electrical ratings
Value
650
60
30
120
±20
60
30
120
260
- 55 to 150
- 55 to 175
Unit
V
A
A
V
A
A
W
°C
Value
0.58
1.47
50
Unit
°C/W
DocID030638 Rev 2 3/16
Electrical characteristics
2 Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol Parameter
Table 4: Static characteristics
Test conditions
V
(BR)CES
Collector-emitter breakdown voltage
V
GE
= 0 V, I
C
= 2 mA
V
CE(sat)
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 30 A
V
GE
= 15 V, I
C
= 30 A,
T
J
= 125 °C
V
GE
= 15 V, I
C
= 30 A,
T
J
= 175 °C
I
F
= 30 A
I
F
= 30 A, T
J
= 125 °C V
F
Forward on-voltage
V
GE(th)
Gate threshold voltage
I
CES
Collector cut-off current
I
F
= 30 A, T
J
= 175 °C
V
V
CE
GE
= V
GE
, I
= 0 V, V
C
= 1 mA
CE
= 650 V
I
GES
Gate-emitter leakage current
V
CE
= 0 V, V
GE
= ±20 V
Symbol
C ies
C oes
C
Q
Q
Q res g ge gc
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Table 5: Dynamic characteristics
Test conditions
V
V
CE
CC
= 25 V, f = 1 MHz, V
= 520 V, I
C
= 30 A,
V
GE
= 0 to 15 V
(see Figure 29: " Gate charge test circuit" )
GE
= 0 V
STGWA30H65DFB
Min. Typ. Max. Unit
5
650
1.55 2
1.65
V
V
1.75
1.85 2.65
1.6
1.5
6 7
25
V
±250 nA
V
µA
Min. Typ. Max. Unit
-
-
3570
143
-
- pF
- 75 -
-
-
-
149
25
62
-
-
- nC
4/16 DocID030638 Rev 2
STGWA30H65DFB Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter Test conditions Min. Typ. Max. Unit Symbol t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(off)
Turn-off-delay time t f
Current fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(off)
Turn-off-delay time t f
Current fall time
E
E
on off
(1)
(2)
Turn-on switching energy
Turn-off switching energy
E ts
Total switching energy
V
CE
= 400 V, I
C
= 30 A,
V
GE
= 15 V, R
G
= 10 Ω
(see Figure 28: " Test circuit for inductive load switching" )
V
CE
= 400 V, I
C
= 30 A,
V
GE
= 15 V, R
G
= 10 Ω,
T
J
= 175 °C
(see Figure 28: " Test circuit for inductive load switching" )
-
-
-
-
46
14.6
- 1616
146
23
-
-
382
293
-
-
-
-
675
45
- 17.8
- 1393
158
65
-
-
725
572
- 1297
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- ns
A/µs ns
µJ ns
A/µs ns
µJ
Notes:
(1)
Including the reverse recovery of the diode.
(2)
Including the tail of the collector current.
DocID030638 Rev 2 5/16
Electrical characteristics
Symbol
STGWA30H65DFB
Table 7: Diode switching characteristics (inductive load)
Parameter Test conditions Min. Typ. Max. Unit t rr
- 140 - ns
Q rr
I rrm dI rr
/dt
E rr t rr
Q rr
I rrm dI rr
/dt
E rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
I
F
= 30 A, V
R
= 400 V, V
GE
= 15 V, di/dt = 1000 A/μs
(see Figure 28: " Test circuit for inductive load switching" )
I
F
= 30 A, V
R
= 400 V, V
GE
= 15 V, di/dt = 1000 A/µs, T
J
= 175 °C
(see Figure 28: " Test circuit for inductive load switching" )
-
-
-
-
-
-
-
-
880
17
650
115
244
- 2743
25
220
320
-
-
-
-
-
-
-
-
- nC
A
A/µs
µJ ns nC
A
A/µs
µJ
6/16 DocID030638 Rev 2
STGWA30H65DFB
2.1 Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature
Electrical characteristics
Figure 3: Collector current vs. case temperature
Figure 4: Output characteristics (T
J
= 25 °C) Figure 5: Output characteristics (T
J
= 175 °C)
Figure 6: V
CE(sat)
vs. junction temperature Figure 7: V
CE(sat)
vs. collector current
DocID030638 Rev 2 7/16
Electrical characteristics
Figure 8: Collector current vs. switching frequency
STGWA30H65DFB
Figure 9: Forward bias safe operating area
8/16
Figure 10: Transfer characteristics
Figure 12: Normalized V
GE(th)
vs. junction temperature
Figure 11: Diode V
F
vs. forward current
GIPD100420151209FSR
V
F
(V)
3
2.5
2
1.5
1
0.5
0
0
T
J
= -40°C
20 40
T
J
= 175°C
T
J
= 25°C
60 80 100 I
F
(A)
Figure 13: Normalized V
(BR)CES
vs. junction temperature
AM16059v2
V
(BR)CES
(norm)
I
C
= 2mA
1.1
1.0
0.9
-50 0 50 100 150 T
J
(°C)
DocID030638 Rev 2
STGWA30H65DFB
Figure 14: Capacitance variations
Electrical characteristics
Figure 15: Gate charge vs. gate-emitter voltage
Figure 16: Switching energy vs. collector current
Figure 17: Switching energy vs. gate resistance
Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage
DocID030638 Rev 2 9/16
Electrical characteristics
Figure 20: Switching times vs. collector current
STGWA30H65DFB
Figure 21: Switching times vs. gate resistance
Figure 22: Reverse recovery current vs. diode current slope
GIPD100420151417FSR
I rm
(A)
I
F
= 30A, V
CC
= 400V
V
GE
= 15V
40
Figure 23: Reverse recovery time vs. diode current slope
GIPD100420151434FSR t rr
(ns)
I
F
= 30A, V
CC
= 400V,
V
GE
= 15V
280
25
20
35
30
T
J =175°C
15
200 600 1000 1400 1800 di/dt(A/µs)
Figure 24: Reverse recovery charge vs. diode current slope
GIPD100420151442FSR
Q rr
(µC)
I
F
= 30A, V
CC
= 400V,
V
GE
= 15V
2.9
260
240
T
J
=175°C
220
200
180
200 600 1000 1400 1800 di/dt(A/µs)
Figure 25: Reverse recovery energy vs. diode current slope
GIPD100420151455FSR
E rr
(mJ)
I
F
= 30A, V
CC
= 400V,
V
GE
= 15V
0.38
0.34
2.8
2.7
0.3
0.26
T
J =175°C
2.6
T
J =175°C
2.5
200 600 1000 1400 1800 di/dt(A/µs)
0.22
0.18
200 600 1000 1400 1800 di/dt(A/µs)
10/16 DocID030638 Rev 2
STGWA30H65DFB
Figure 26: Thermal impedance
Electrical characteristics
Figure 27: Thermal impedance for diode
DocID030638 Rev 2 11/16
Test circuits
3 Test circuits
Figure 28: Test circuit for inductive load switching
STGWA30H65DFB
Figure 29: Gate charge test circuit
G
C
A A
E
B
L=100 µH
B
G
C
E
D.U.T
+
-
R
G
3.3
µF
1000
µF
V
CC
AM01504v 1
Figure 30: Switching waveform Figure 31: Diode reverse recovery waveform
12/16 DocID030638 Rev 2
STGWA30H65DFB
4
4.1
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
TO-247 long leads package information
Figure 32: TO-247 long leads package outline
DocID030638 Rev 2 13/16
Package mechanical data
Dim.
E
E2
E3 e
L
L1
P
Q
S b2 b3 c
D
A
A1
A2 b
Table 8: TO-247 long leads package mechanical data
STGWA30H65DFB mm
Min. Typ. Max.
4.90
2.31
1.90
1.16
0.59
20.90
15.70
4.90
2.40
5.34
19.80
3.50
5.60
6.05
5.00
2.41
2.00
21.00
15.80
5.00
2.50
5.44
19.92
3.60
6.15
15.90
5.10
2.60
5.54
20.10
4.30
3.70
6.00
6.25
5.10
2.51
2.10
1.26
3.25
2.25
0.66
21.10
14/16 DocID030638 Rev 2
STGWA30H65DFB
5
Revision history
Revision history
Date Revision
Table 9: Document revision history
Changes
16-May-2017
22-Nov-2017
1
2
Initial version.
Modified title and Table 7: "Diode switching characteristics
(inductive load)".
Minor text changes.
DocID030638 Rev 2 15/16
STGWA30H65DFB
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16/16 DocID030638 Rev 2
