STMicroelectronics 2STC5242 Datasheet
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2STC5242
High power NPN epitaxial planar bipolar transistor
Features
■
■
■
■
High breakdown voltage V
CEO
= 230 V
Complementary to 2STA1962
Fast-switching speed
Typical f
T
= 30 MHz
Application
■ Audio power amplifier
Description
This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
TO-3P
1
2
3
Figure 1.
Internal schematic diagram
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Table 1.
Device summary
Order code
2STC5242
Marking
2STC5242
Package
TO-3P
Packaging
Tube
July 2008 Rev 3 1/9 www.st.com
9
Electrical ratings 2STC5242
Table 2.
Absolute maximum ratings
Symbol Parameter
V
CBO
V
CEO
V
EBO
I
C
I
CM
P tot
T stg
T
J
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current
Total dissipation at T
C
= 25°C
Storage temperature
Operating junction temperature
Table 3.
Thermal data
Symbol Parameter
R thJ-case
Thermal resistance junction-case Max
Value
230
230
5
15
30
150
-55 to 150
150
Value
0.83
Unit
A
W
°C
°C
V
A
V
V
Unit
°C/W
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2STC5242 Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol Parameter Test conditions
I
CBO
Collector cut-off current
(I
E
= 0)
V
CB
= 230 V
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V
V
(BR)CEO
(1)
Collector-emitter breakdown voltage (I
B
= 0)
I
C
= 50 mA
V
(BR)CBO
Collector-base breakdown voltage (I
E
= 0)
V
(BR)EBO
(1)
Emitter-base breakdown voltage (I
C
= 0)
V
CE(sat)
(1)
Collector-emitter saturation voltage
I
I
I
C
E
C
= 100
= 1 mA
µA
= 8 A I
B
= 800 mA
V
BE
Base-emitter voltage I
C
= 7 A V
CE
= 5 V h
FE
DC current gain
I
C
= 1 A V
CE
= 5 V
I
C
= 7 A V
CE
= 5 V t on t s t f f
T
Resistive load
Turn-on time
Storage time
Fall time
V
CC
I
B1
= 60 V I
= -I
B2
C
= 0.5 A
= 5 A
C
CBO
Transition frequency
Collector-base capacitance
(I
E
= 0)
I
C
= 1 A V
CE
= 5 V
V
CB
= 10 V f = 1 MHz
1.
Pulsed: pulse duration = 300 µs, duty cycle < 1.5%
Min.
Typ.
Max.
Unit
5 µA
230
230
5
80
35
0.24
4.7
0.6
30
150
5
3
1.5
160
µA
V
V
V
V
V
µs
µs
µs
MHz pF
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Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2.
Safe operating area Figure 3.
Derating curve
2STC5242
Figure 4.
Output characteristics Figure 5.
DC current gain
Figure 6.
Collector-emitter saturation voltage Figure 7.
Collector current vs base-emitter voltage
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2STC5242
Figure 8.
Resistive load switching test circuit
Electrical characteristics
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data 2STC5242
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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2STC5242 Package mechanical data
DIM.
c
D
D1
E
E1
A
A1
A2 b b1 b2
L1
L2
P
E2 e
L
Q
Q1
MIN.
4.6
1.45
1.20
0.80
1.80
2.80
0.55
19.70
15.40
TO-3P Mechanical data mm.
TYP
1.50
1.40
1
5.15
19.50
18.20
3.10
0.60
19.90
13.90
13.60
9.60
5.45
20
3.50
18.40
5
3.80
MAX.
5
1.65
1.60
1.20
2.20
3.20
0.75
20.10
15.80
5.75
20.50
18.60
3.30
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Revision history 2STC5242
Table 5.
Document revision history
Date Revision
28-Sep-2007
11-Dec-2007
14-Jul-2008
1
2
3
Changes
Initial release.
Document promoted from preliminary data to datasheet.
Updated total power dissipation and relevant thermal resistance junction-case value.
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2STC5242 Revision history
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