STMicroelectronics FAST RECOVERY RECTIFIER DIODE Datasheet
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BYT 12P-1000
FAST RECOVERY RECTIFIER DIODE
VERY HIGH REVERSE VOLTAGE CAPABILITY
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
Cathode connected to case
K
A
SUITABLE APPLICATIONS
FREE WHEELING DIODE IN CONVERTERS
AND MOTOR CONTROL CIRCUITS
RECTIFIER IN S.M.P.S.
TO220AC
(Plastic)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
I
FRM
I
F (RMS)
I
F (AV)
Parameter
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
RMS Forward Current
Average Forward Current t p
≤
10
µ s
Value
1000
1000
150
25
12
I
FSM
P
Surge Non Repetitive Forward Current
T case
= 100
°
C
δ
= 0.5
t p
= 10ms
Sinusoidal
T case
= 100
°
C
75 A
Power Dissipation
Storage and Junction Temperature Range
25
- 40 to + 150
- 40 to + 150
W
°
C stg
T j
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THERMAL RESISTANCE
Symbol Test Conditions Value Unit
°
C/W R th (j - c)
Junction-case 2
Unit
V
V
A
A
A
October 1999 - Ed: 1B 1/5
BYT 12P-1000
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol
I
R
T j
= 25
°
C
T j
= 100
°
C
V
F
T j
= 25
°
C
T j
= 100
°
C
Test Conditions
V
R
= V
RRM
I
F
= 12A
RECOVERY CHARACTERISTICS
Symbol t rr
T j
= 25
°
C
Test Conditions
I
F
I
F
= 0.5A I
R
F
/dt = - 15A/
µ s V
R
= 30V
1A = 0.25A
Min.
Typ.
Max.
50
2.5
1.9
1.8
Min.
Typ.
Max.
155
65
Unit
µ
A mA
V
Unit ns
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)
Symbol t
IRM di
F
/dt = - 50A/
µ s
di
F
/dt = - 100A/
µ s
I
RM di
F
/dt = -50A/
µ s
di
F
/dt = - 100A/
µ s
Test Conditions
V
CC
= 200 V I
F
L p
≤
0.05
µ
H T j
= 12A
= 100
°
C
See figure 11
Min.
Typ.
Max.
200
Unit ns
120
7.8
9
A
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)
Symbol
C =
V
RP
V
CC
Test Conditions
T j di
= 100
°
C
F
/dt = - 12A/
µ s L
CC p
= 200V I
F
= I
F (AV)
= 12
µ
H See figure 12
Min.
To evaluate the conduction losses use the following equations:
V
F
= 1.47 + 0.026 I
F
P = 1.47 x IF
(AV)
+ 0.026 I
F
2
(RMS)
Typ.
Max.
4.5
Unit
Figure 1. Low frequency power losses versus average current
Figure 2. Peak current versus form factor
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Figure 3. Non repetitive peak surge current versus overload duration
BYT 12P-1000
Figure 4. Thermal impedance versus pulse width
Figure 5. Voltage drop versus forward current Figure 6. Recovery charge versus di
F
/dt
Figure 8. Peak reverse current versus di
F
/d tFigure 7. Recovery time versus di
F
/d t-
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BYT 12P-1000
Figure 9. Peak forward voltage versus di
F
/d tt
Figure 10. Dynamic parameters versus junction temperature.
Figure 11. Turn-off switching characteristics (without series inductance).
Figure 12. Turn-off switching characteristics (with series inductance)
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BYT 12P-1000
PACKAGE MECHANICAL DATA :
TO220AC Plastic
L2
F
G
H2
Ø I
L5
L6
F1
L9
L4
C
D
A
M
E
L7
REF.
DIMENSIONS
E
F
F1
G
H2
A
C
D
Millimeters
Min.
4.40
1.23
2.40
Max.
4.60
1.32
2.72
Inches
Min.
Max.
0.173
0.181
0.048
0.051
0.094
0.107
L2
L4
L5
L6
L7
0.49
0.61
1.14
4.95
0.70
0.88
1.70
5.15
0.019
0.024
0.044
0.194
0.027
0.034
0.066
0.202
10.00
10.40
0.393
0.409
16.40 typ.
13.00
2.65
15.25
6.20
14.00
2.95
15.75
6.60
L9
M
3.50
Diam. I 3.75
3.93
2.6 typ.
3.85
0.645 typ.
0.511
0.104
0.116
0.600
0.244
0.259
0.137
0.147
0.551
0.620
0.154
0.102 typ.
0.151
Marking: type number
Cooling method: by conduction (method C)
Weight : 1.86g
Recommended torque value : 80cm. N
Maximum torque value : 100cm. N
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Obsolete Product(s) - Obsolete Product(s) use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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