STPS40M100C
Datasheet
100 V, 40 A power Schottky rectifier
K
A1 (1)
A2 (3)
A1
K
A2
TO-220AB
K
K (2)
Product status link
STPS40M100C
Product summary
Symbol
I
F(AV)
V
RRM
T j
(max.)
V
F
(typ.)
Value
2 x 20 A
100 V
150 °C
0.585 V
A1
K
A2
I²PAK
Features
• High current capability
• Avalanche rated
• Low forward voltage drop current
• High frequency operation
• ECOPACK ® 2 compliant
Applications
• Switching diode
• SMPS
• DC/DC converter
• LED lighting
• Desktop power supply
• Notebook adapter
Description
This dual diode Schottky rectifier is suited for high frequency switch mode power supply.
Packed in TO-220AB and I
2
Pak, the STPS40M100C is optimized for use in notebook, game station and desktop adaptors, providing in these applications a good efficiency at both low and high load.
DS6170 - Rev 4 - February 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STPS40M100C
Characteristics
Characteristics
Table 1. Absolute Ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
Repetitive peak reverse voltage
Forward rms current
Parameter
I
F(AV)
I
FSM
P
ARM
T stg
T j
Average forward current, δ = 0.5
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
(1)
T
C
= 130 °C
T
C
= 120 °C t p t p
= 10 ms sinusoidal
= 10 µs , T j
Per diode
Per device
= 125 °C
1. (dP tot
/dT j
) < (1/R th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Value
100
60
20
40
400
1668
-65 to +175
150
Unit
V
A
A
A
W
°C
°C
Symbol
R th(j-c)
R th(c)
Junction to case
Table 2. Thermal resistance parameters
Parameter
Per diode
Total
Coupling
Value
1.40
0.95
0.50
Unit
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔT j (diode1)
= P
(diode1)
x R th(j-c)
(per diode) + P
(diode2)
x R th(c)
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Symbol
I
R
(1)
V
F
(2)
Table 3. Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Forward voltage drop
Test conditions
T j
= 25 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
T j
= 125 °C
T j
= 125 °C
T j
= 25 °C
T j
= 125 °C
I
I
I
V
V
F
F
F
R
R
= V
= 70 V
= 5 A
RRM
= 10 A
= 20 A
Min.
-
-
-
-
-
-
1. Pulse test: t p
= 5 ms, δ < 2%
2. Pulse test: t p
= 380 µs, δ < 2%
Typ.
15
7.5
0.415
0.500
0.585
To evaluate the conduction losses, use the following equation: P = 0.560 x I
F(AV)
+ 0.004 x I
F
2
(RMS)
Max.
70
70
40
40
0.500
0.560
0.780
0.640
Unit
µA mA
µA mA
V
DS6170 - Rev 4 page 2/12
STPS40M100C
Characteristics
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
DS6170 - Rev 4 page 3/12
STPS40M100C
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus average forward current (per diode)
20
18
16
14
12
10
8
6
4
2
0
0
P
F(AV)
(W)
2 4 6 8
δ=0.05
δ=0.1
I
F(AV)
(A)
δ=0.2
δ=0.5
δ =tp/T
T
δ=1 tp
10 12 1 4 1 6 18 2 0 2 2 2 4 26 2 8
Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode)
22
I
F(AV)
(A)
8
6
4
2
0
0
20
18
16
14
12
10
δ =tp/T
T
25 tp
5 0
R th(j-a)
=R th(j-c)
R th(j-a)
= 15 °C/W
T amb (°C)
75 100 125 150
Figure 3. Normalized avalanche power derating versus pulse duration (T j
= 125 °C)
1
P
ARM
(tp)
P
ARM
(10 µs)
0.1
0.01
0.001
1 10 100 1000
Figure 4. Relative variation of thermal impedance junction to case versus pulse duration
Zth(j-c) /Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 tp(s )
1.E-01 1.E+00
DS6170 - Rev 4 page 4/12
STPS40M100C
Characteristics (curves)
Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode)
1.E+02
I
R
(mA)
1.E+01
T j
=150 °C
T j
=125 °C
1.E+00
1.E-01
1.E-02
T j
=100 °C
T j
=75 °C
T j
=50 °C
T j
=25 °C
V
R
(V)
1.E-03
0 1 0 20 30 40 50 60 70 80 90 100
Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode)
10000
C(pF)
F=1 MHz
V osc
=30 mV
RMS
T j
=25 °C
1000
100
1 1 0
VR(V)
100
Figure 7. Forward voltage drop versus forward current (per diode)
40
IF(A)
35
30
25
20
T j j
=125 °C
(Maximum values)
15
10
T j j
=125 °C
(Typical values)
T j
=25 °C
(Maximum values)
5
V
F
(V)
0
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
DS6170 - Rev 4 page 5/12
2
2.1
STPS40M100C
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
•
•
•
•
TO-220AB package information
Epoxy meets UL 94,V0
Cooling method: by conduction (C)
Recommended torque value: 0.55 N·m
Maximum torque value: 0.70 N·m
Figure 8. TO-220AB package outline
DS6170 - Rev 4 page 6/12
DS6170 - Rev 4
Ref.
H1
J1
L
L1
L20
L30
θP
Q
D1
E e e1
F
A b b1 c
D
STPS40M100C
TO-220AB package information
Table 4. TO-220AB package mechanical data
Dimensions
Min.
4.40
0.61
1.14
0.48
15.25
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
3.75
2.65
Millimeters
1.27 typ.
16.40 typ.
28.90 typ.
Max.
4.60
0.88
1.55
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
3.85
2.95
0.394
0.094
0.195
0.048
0.244
0.094
0.512
0.138
Inches (for reference only)
Min.
Max.
0.173
0.240
0.045
0.019
0.600
0.181
0.035
0.061
0.028
0.620
0.050 typ.
0.409
0.106
0.203
0.052
0.260
0.107
0.551
0.155
0.646 typ.
1.138 typ.
0.148
0.104
0.152
0.116
page 7/12
2.2
•
•
I²PAK package information
Epoxy meets UL 94,V0
Cooling method: by conduction (C)
Figure 9. I²PAK package outline
STPS40M100C
I²PAK package information
DS6170 - Rev 4 page 8/12
Ref.
c2
D e e1
E
L
L1
L2
A
A1 b b1 c
STPS40M100C
I²PAK package information
Table 5. I²PAK package mechanical data
Dimensions
Millimeters
Min.
1.23
8.95
2.40
4.95
10.00
4.40
2.40
0.61
1.14
0.49
13.00
3.50
1.27
Max.
1.32
9.35
2.70
5.15
10.40
4.60
2.72
0.88
1.70
0.70
14.00
3.93
1.40
Inches (for reference only)
Min.
Max.
0.048
0.352
0.094
0.195
0.394
0.173
0.094
0.024
0.044
0.019
0.512
0.138
0.050
0.052
0.368
0.106
0.203
0.409
0.181
0.107
0.035
0.067
0.028
0.551
0.155
0.055
DS6170 - Rev 4 page 9/12
3
STPS40M100C
Ordering information
Ordering information
Order code
STPS40M100CT
STPS40M100CR
Table 6. Ordering information
Marking
PS40M100CT
STPS40M100CR
Package
TO-220AB
I 2 PAK
Weight
1.95 g
1.50 g
Base qty.
50
50
Delivery mode
Tube
Tube
DS6170 - Rev 4 page 10/12
STPS40M100C
Revision history
Date
25-Mar-2009
10-Apr-2010
29-Apr-2010
18-Feb-2019 4
Table 7. Document revision history
Version
1
2
3
Changes
First issue.
Updated package graphics.
Added I²PAK package. Updated weight in Table 7.
Updated cover page and Table 1. Absolute Ratings (limiting values, per diode, at 25 °C, unless otherwise specified) .
Removed Electrical characteristics (figure 1), Normalized avalanche power derating versus junction temperature (figure 5), Reverse safe operating area
(figure 9).
Updated Figure 3. Normalized avalanche power derating versus pulse duration (T j
= 125 °C)
.
Minor text changes to improve readability.
DS6170 - Rev 4 page 11/12
STPS40M100C
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS6170 - Rev 4 page 12/12
