2N6284
2N6287
Complementary power Darlington transistors
Features
■
■
Complementary transistors in monolithic
Darlington configuration
Integrated collector-emitter antiparallel diode
Applications
■
■
■
Audio power amplifier
DC-AC converter
General purpose switching applications
Description
The 2N6284 is an epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications.
The complementary PNP type is 2N6287.
1
2
TO-3
Figure 1.
Internal schematic diagrams
R
1
typ. = 8 k
Ω
R
2
typ. = 60 k
Ω
Table 1.
Device summary Obsolete Product(s) - Obsolete Product(s)
Order code Marking Package Packaging
2N6284
2N6287
2N6284
2N6287
TO-3 Bag
January 2009 Rev 3 1/8 www.st.com
8
Absolute maximum ratings
1 Absolute maximum ratings
Table 2.
Absolute maximum ratings
Symbol Parameter
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P tot
T stg
T
J
Collector-base voltage (I
E
Collector-emitter voltage (I
B
Emitter-base voltage (I
Collector current
Collector peak current (t
P
Base current
Total dissipation at T
C
Storage temperature
= 0)
= 0)
C
= 0)
< 5 ms)
= 25 °C
Max. operating junction temperature
For PNP type voltage and current values are negative
Table 3.
Symbol
R thj-case
Thermal data
Parameter
Thermal resistance junction-case ____ ____ Max
NPN
PNP
2N6284 - 2N6287
Value
2N6284
2N6287
100
100
5
20
40
0.5
160
-65 to 200
200
Unit
A
A
W
°C
°C
V
A
V
V
Value
1.09
Unit
°C/W
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2N6284 - 2N6287 Electrical characteristics
(T case
= 25 °C; unless otherwise specified)
Table 4.
Symbol
Electrical characteristics
Parameter Test conditions
V
CE
= 100 V
V
CE
= 100 V T c
= 150 °C
V
CEO(sus)
(1)
V
CE(sat)
(1)
Collector-emitter sustaining voltage (I
B
= 0)
I
C
= 100 mA
Collector-emitter saturation voltage
I
C
= 10 A I
B
= 40 mA
I
C
= 20 A __ I
B
= 200 mA
V
I
I
I
CEV
CEO
EBO
BE(sat)
(1)
Collector cut-off current
(V
BE
= -1.5 V)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Base-emitter saturation voltage
I
V
V
CE
EB
C
= 50 V
= 5 V
= 20 A __ I
B
= 200 mA
V
BE
(1)
Base-emitter voltage h
FE
(1) h fe
DC current gain
Small signal current gain
I
C
= 10 A __ V
CE
= 3 V
I
C
= 10 A _ V
CE
= 3 V
I
C
= 20 A _ V
CE
= 3 V
I
C
= 10 A _ V
CE
= 3 V f = 1 kHz
C
CBO
Collector-base capacitance (I
E
= 0)
V
CB
= 10 V f = 100 kHz for 2N6284 for 2N6287
1.
Pulsed duration = 300 µs, duty cycle
≤
1.5 %
For PNP type voltage and current values are negative
Min.
Typ.
Max.
Unit
0.5
5 mA mA
100
750
100
300
1
2
2
3
4
2.8
18000
400
600 mA mA
V
V
V
V
V pF pF
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Electrical characteristics 2N6284 - 2N6287
2.1 Electrical characteristics (curves)
Figure 2.
DC current gain (NPN type) Figure 3.
DC current gain (PNP type) h
FE
G-5 3 50
T
C
=150°C
10000
Figure 4.
DC current gain (NPN type)
1000
T
C
=25°C
T
C
=-55°C
100
0.1
1
V
CE
=5V
10 I
C
(A)
Figure 5.
DC current gain (PNP type)
Figure 6.
Collector-emitter saturation voltage
(NPN type)
Figure 7.
Collector-emitter saturation voltage
(PNP type)
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2N6284 - 2N6287 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Revision history
Table 5.
Document revision history
Date Revision
02-Mar-2000 2
26-Jan-2009 3 Added paragraph
2.1
Changes
2N6284 - 2N6287
Obsolete Product(s) - Obsolete Product(s)
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2N6284 - 2N6287
DIM.
E
G
N
P
C
D
A
B
R
U
V min.
11.00
0.
9 7
1.50
8 .
3 2
1 9 .00
10.70
16.50
25.00
4.00
38 .50
3 0.00
TO-
3
mechanical data
mm.
typ max.
1 3 .10
1.15
1.65
8 .
9 2
20.00
11.10
17.20
26.00
4.0
9
39 .
3 0
3 0.
3 0
Revision history
Obsolete Product(s) - Obsolete Product(s)
0015 9 2 3 C
7/8
2N6284 - 2N6287
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