STP5N105K5
N-channel 1050 V, 2.9 Ω typ., 3 A MDmesh™ K5
Power MOSFET in a TO-220 package
Datasheet - production data
Features
Order code
VDS
RDS(on) max.
ID
PTOT
STP5N105K5
1050 V
3.5 Ω
3A
85 W
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
Applications
Figure 1: Internal schematic diagram
D(2, TAB)
Switching applications
Description
This N-channel Zener-protected Power MOSFET
is designed using ST’s revolutionary avalancherugged very high voltage MDmesh™ K5
technology, based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance, and ultra-low gate
charge for applications which require superior
power density and high efficiency.
G(1)
Table 1: Device summary
S(3)
Order code
Marking
Package
Packaging
STP5N105K5
5N105K5
TO-220
Tube
AM01476v1
October 2014
DocID026703 Rev 3
This is information on a product in full production.
1/14
www.st.com
Contents
STP5N105K5
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 9
4
Package mechanical data ............................................................. 10
4.1
5
2/14
TO-220 package mechanical data .................................................. 11
Revision history ............................................................................ 13
DocID026703 Rev 3
STP5N105K5
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
VGS
Parameter
Gate- source voltage
Value
Unit
± 30
V
ID
Drain current (continuous) at TC = 25 °C
3
A
ID
Drain current (continuous) at TC = 100 °C
2
A
IDM(1)
Drain current (pulsed)
12
A
PTOT
Total dissipation at TC = 25 °C
85
W
IAR
Max current during repetitive or single pulse avalanche
1
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
85
mJ
dv/dt (2)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt (3)
MOSFET dv/dt ruggedness
50
V/ns
- 55 to 150
°C
Tj
Operating junction temperature
Tstg
Storage temperature
Notes:
(1)Pulse
(2)I
SD
(3)V
width limited by safe operating area
≤ 3 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS
DS
≤ 840 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
1.47
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
°C/W
DocID026703 Rev 3
3/14
Electrical characteristics
2
STP5N105K5
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4: On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
VGS= 0, ID = 1 mA
Min.
Typ.
Max.
1050
Unit
V
VGS = 0, VDS = 1050 V
1
µA
VGS = 0, VDS = 1050 V,
Tc=125 °C
50
µA
±10
µA
4
5
V
2.9
3.5
Ω
Min.
Typ.
Max.
Unit
-
210
-
pF
-
16
-
pF
-
0.5
-
pF
-
26
-
pF
-
10
-
pF
IDSS
Zero gate voltage drain
current
IGSS
Gate body leakage current
VDS = 0, VGS = ± 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID= 1.5 A
3
Table 5: Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Co(tr)(1)
Equivalent capacitance time
related
VDS =100 V, f=1 MHz,
VGS=0
VGS = 0, VDS = 0 to 840 V
Co(er)(2)
Equivalent capacitance
energy related
RG
Intrinsic gate resistance
f = 1MHz open drain
-
9
-
Ω
Qg
Total gate charge
-
12.5
-
nC
Qgs
Gate-source charge
-
2
-
nC
Qgd
Gate-drain charge
VDD = 840 V, ID = 3 A
VGS =10 V
Figure 16: "Gate charge
test circuit"
-
9.5
-
nC
Notes:
(1)Time
related is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS
increases from 0 to 80% VDSS
(2)Energy
related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS
increases from 0 to 80% VDSS
Table 6: Switching times
Symbol
td(on)
tr
td(off)
tf
4/14
Parameter
Turn-on delay
time
Rise time
Turn-off delay
time
Test conditions
VDD = 525V, ID = 1.5 A, RG=4.7 Ω,
VGS=10 V
Figure 18: " Unclamped inductive load
test circuit"
Fall time
DocID026703 Rev 3
Min.
Typ.
Max.
Unit
-
15.5
-
ns
-
8.5
-
ns
-
31
-
ns
-
24
-
ns
STP5N105K5
Electrical characteristics
Table 7: Source drain diode
Symbol
Parameter
ISD
Source-drain
current
ISDM
Source-drain
current (pulsed)
VSD(1)
Test conditions
Min.
Typ.
Max.
Unit
3
A
12
A
1.5
V
-
Forward on
voltage
trr
Reverse recovery
time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
trr
Reverse recovery
time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
ISD= 3 A, VGS=0
-
ISD= 3 A, VDD= 60 V
di/dt = 100 A/µs,
Figure 17: " Test circuit for inductive
load switching and diode recovery
times"
-
400
ns
-
2.3
µC
-
12
A
ISD= 3 A,VDD= 60 V
di/dt=100 A/µs,
Tj=150 °C
Figure 17: " Test circuit for inductive
load switching and diode recovery
times"
-
560
ns
-
3.1
µC
-
11
A
Notes:
(1)Pulsed:
pulse duration = 300µs, duty cycle 1.5%
Table 8: Gate-source Zener diode
Symbol
V(BR)GSO
Parameter
Gate-source breakdown voltage
Test conditions
IGS = ± 1mA, ID=0
Min
Typ.
Max.
Unit
30
-
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance the
device's ESD capability. In this respect the Zener voltage is appropriate to achieve an
efficient and cost-effective intervention to protect the device's integrity. These integrated
Zener diodes thus avoid the usage of external components.
DocID026703 Rev 3
5/14
Electrical characteristics
2.1
STP5N105K5
Electrical characteristics (curves)
Figure 3: Thermal impedance
Figure 2: Safe operating area
GIPD030920141136FSR
ID
(A)
n)
(o
O
p
Lim era
ite tion
d
by in t
m his
ax a
RD rea
S
is
10
1
0.1
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
10
1
1000 V DS(V)
100
Figure 4: Output characteristics
Figure 5: Transfer characteristics
GIPG290820141204FSR
GIPG290820141334FSR
ID
(A)
ID(A)
V DS=20V
6
5
V GS=10, 11V
5
4
9V
4
3
3
8V
2
2
1
1
7V
6V
0
0
5
10
15
20
Figure 6: Gate charge vs gate-source voltage
GIPG290820141348FSR
V DS
V GS
(V)
10
0
5
V DS(V)
V DS=840V
ID=3A
1200
8
800
6
600
4
400
2
200
0
0
Q g(nC)
7
9
8
10
V GS(V)
Figure 7: Static drain-source on-resistance
(V)
V DS
6
GIPG290820141400FSR
R DS(on)
(Ω)
V GS=10V
4
3.5
3
2.5
2
1.5
0
6/14
2
4
6
8
10
12
DocID026703 Rev 3
1
0
1
2
3
4
ID(A)
STP5N105K5
Electrical characteristics
Figure 8: Capacitance variations
GIPG290820141409FSR
C
(pF)
Figure 9: Source-drain diode forward
characteristics
GIPG290820141432FSR
V SD (V)
1000
1
T J=-50°C
Ciss
0.9
100
T J=25°C
0.8
10
Coss
Crss
0.7
1
T J=150°C
0.6
0.1
0.1
1
100
10
V DS(V)
Figure 10: Normalized gate threshold
voltage vs temperature
0.5
0
0.5
1
1.5
2
2.5
3
ISD(A)
Figure 11: Normalized on-resistance vs
temperature
AM18082v1
V GS(th)
(norm)
ID=100 µ A
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
-100
-50
0
50
100
150
T J(°C)
Figure 12: Normalized V(BR)DSS vs
temperature
AM18083v1
V (BR)DSS
(norm)
ID=1m A
1.1
Figure 13: Maximum avalanche energy
GIPG290820141445FSR
E AS
(mJ)
80
70
60
1.05
50
1
40
30
0.95
20
0.9
0.85
-100
10
0
-50
0
50
100
T J(°C)
DocID026703 Rev 3
0
20
40
60
80
100 120 140 T J(°C)
7/14
Electrical characteristics
STP5N105K5
Figure 14: Output capacitance stored energy vs temperature
GIPG290820141419FSR
E oss
(µJ)
4
2
0
0
8/14
200
400
600
DocID026703 Rev 3
800
V DS(V)
STP5N105K5
3
Test circuits
Test circuits
Figure 15: Switching times test circuit for
resistive load
Figure 17: Test circuit for inductive load
switching and diode recovery times
Figure 19: Unclamped inductive waveform
DocID026703 Rev 3
Figure 16: Gate charge test circuit
Figure 18: Unclamped inductive load test
circuit
Figure 20: Switching time waveform
9/14
Package mechanical data
4
STP5N105K5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/14
DocID026703 Rev 3
STP5N105K5
4.1
Package mechanical data
TO-220 package mechanical data
Figure 21: TO-220 type A package outline
DocID026703 Rev 3
11/14
Package mechanical data
STP5N105K5
Table 9: TO-220 type A mechanical data
mm
Dim.
Min.
Max.
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
12/14
Typ.
A
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
ÆP
3.75
3.85
Q
2.65
2.95
DocID026703 Rev 3
STP5N105K5
5
Revision history
Revision history
Table 10: Document revision history
Date
Revision
Changes
17-Jul-2014
1
First release.
03-Sep-2014
2
Document status promoted from preliminary to production data.
Added Section 3.1: "Electrical characteristics (curves)"
Minor text changes.
15-Oct-2014
3
Updated Figure 6: "Gate charge vs gate-source voltage"and Figure
8: "Capacitance variations"
DocID026703 Rev 3
13/14
STP5N105K5
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